High-Temperature Failure Mechanisms of Hot-Pressed Si3N4 and Si3N4/Si3N4-Whisker-Reinforced Composites

The high-temperature flexural strength of hot-pressed silicon nitride (Si₃N₄) and Si₃N₄-whisker-reinforced Si₃N₄-matrix composites has been measured at a crosshead speed of 1.27 mm/min and temperatures up to 1400°C in a nitrogen atmosphere. Load–displacement curves for whisker-reinforced composites showed nonelastic fracture behavior at 1400°C. In contrast, such behavior was not observed for monolithic Si₃N₄. Microstructures of both materials have been examined by scanning and transmission electron microscopy. The results indicate that grain-boundary sliding could be responsible for strength degradation in both monolithic Si₃N₄ and its whisker composites. The origin of the nonelastic failure behavior of Si₃N₄-whisker composite at 1400°C was not positively identified but several possibilities are discussed.     

Oxidation Resistance of Fully Dense ZrB2 with SiC, TaB2, and TaSi2 Additives

Specimens of ZrB₂ containing various concentrations of B₄C, SiC, TaB₂, and TaSi₂ were pressureless-sintered and post-hot isostatic pressed to their theoretical densities. Oxidation resistances were studied by scanning thermogravimetry over the range 1150°–1550°C. SiC additions improved oxidation resistance over a broadening range of temperatures with increasing SiC content. Tantalum additions to ZrB₂–B₄C–SiC in the form of TaB₂ and/or TaSi₂ increased oxidation resistance over the entire evaluated spectrum of temperatures. TaSi₂ proved to be a more effective additive than TaB₂. Silicon-containing compositions formed a glassy surface layer, covering an interior oxide layer. This interior layer was less porous in tantalum-containing compositions.     

Oxidation Behavior of Hot-Pressed Si3N4

The high-temperature chemical stability of hot-pressed Si₃N₄ was studied between 600° and 1450°C. Reactions were followed by X-ray diffraction and scanning electron microscopy. In air, this material begins to oxidize at 700° to 750°C; a distinct amorphous siO₂ surface layer results after 24 h at 750°C-Concomitant formation of cristobalite occurs, depending on exposure time, and is enhanced as temperature is Increased. Magnesium and calcium magnesium silicates form above 1000°C. The data suggest that impurities, e.g. Mg, Ca, and Fe, greatly lower the oxidation resistance of Si₃N₄ in air.     

Internal Phase Changes in Dense Si3N4 Associated with High-Temperature Oxidation

The effects of oxidation at 1400°C for 100 h on both surface and internal composition of commercial and laboratory hot-pressed Si₃N₄ with MgO or ZrO₂ additives as well as chemically vapor deposited (CVD) Si₃N₄ were studied using X-ray diffraction. Samples were also compared to the same temperature treatments in Ar. The results indicate the grain boundaries act as rapid diffusion paths for the transport of oxygen.     

Pressureless Sintering of Dense Si3N4 and Si3N4/SiC Composites with Nitrate Additives

The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si₃N₄ and a Si₃N₄/SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si₃N₄ particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si₃N₄ particles milled with oxide additives. Monolithic Si₃N₄ could be sintered to 94% of theoretical density (TD) at 1500°C with nitrate additives. The sintering temperature was about 100°C lower than the case with oxide additives. After pressureless sintering at 1750°C for 2 h in N₂, the bulk density of a Si₃N₄/20 wt% SiC composite reached 95% TD with nitrate additives.     

Properties of Si3N4 Produced by Nitriding Slip-Cast Si Containing Si3N4 Grog Additions

The properties of Si₃N₄ compositions produced by nitriding slip-cast Si bodies containing up to 16% Si₃N₄ grog were determined. The introduction of grog consistently lowered the densities, the room- and high-temperature strengths, and the resistance to oxidation. The open structure of the grog-containing mixes favored low-temperature gas-phase reactions leading to α-Si₃N₄ formation. In higher-density compositions containing predominantly Si, gas-liquid-solid reactions at higher temperatures produced a relatively greater content of the β phase.     

Role of Si2N2O in the Passive Oxidation of Chemically-Vapor-Deposited Si3N4

The results of two-step oxidation experiments on chemically-vapor-deposited Si₃N₄ and SiC at 1350°C show that a correlation exists between the presence of a Si₂N₂O interphase and the strong oxidation resistance of Si₃N₄. During normal oxidation, k _p for SiC was 15 times higher than that for Si₃N₄, and the oxide scale on Si₃N₄ was found by SEM and TEM to contain a prominent Si₂N₂O inner layer. However, when oxidized samples are annealed in Ar for 1.5 h at 1500°C and reoxidized at 1350°C as before, three things happen: the oxidation k _p increases over 55-fold for Si₃N₄, and 3.5-fold for SiC; the Si₃N₄ and SiC oxidize with nearly equal k _p's; and, most significant, the oxide scale on Si₃N₄ is found to be lacking an inner Si₂N₂O layer. The implications of this correlation for the competing models of Si₃N₄ oxidation are discussed.     

Compressive Creep and Oxidation Resistance of an Si3N4 Material Fabricated in the System Si3N4-Si2N2O-Y2Si2O7

The compressive creep behavior and oxidation resistance of an Si₃N₄/Y₂Si₂O₇ material (0.85Si₃N₄+0.10SiO₂+0.05Y₂O₃) were determined at 1400°C. Creep re sistance was superior to that of other Si₃N₄ materials and was significantly in creased by a preoxidation treatment (1600°C /120 h). An apparent parabolic rate constant of 4.2 × 10⁻¹¹ kg²·m-⁴·s⁻¹ indicates excellent oxidation resistance.     

Thermophysical Properties of ZrB2 and ZrB2–SiC Ceramics

Thermophysical properties were investigated for zirconium diboride (ZrB₂) and ZrB₂–30 vol% silicon carbide (SiC) ceramics. Thermal conductivities were calculated from measured thermal diffusivities, heat capacities, and densities. The thermal conductivity of ZrB₂ increased from 56 W (m K)⁻¹ at room temperature to 67 W (m K)⁻¹ at 1675 K, whereas the thermal conductivity of ZrB₂–SiC decreased from 62 to 56 W (m K)⁻¹ over the same temperature range. Electron and phonon contributions to thermal conductivity were determined using electrical resistivity measurements and were used, along with grain size models, to explain the observed trends. The results are compared with previously reported thermal conductivities for ZrB₂ and ZrB₂–SiC.     

Hot Isostatic Pressing of Si3N4 Powder Compacts and Reaction-Bonded Si3N4

Hot isostatically pressed silicon nitride was produced by densifying Si₃N₄ powder compacts and reaction-bonded Si₃N₄ (RBSN) parts with yttria as a sintering additive. The microstructure was analyzed using scanning electron microscopy, X-ray diffraction, and density measurements. The influence of the microstructure on fracture strength, creep, and oxidation behavior was investigated. It is assumed that the higher amount of oxygen in the Si₃N₄ starting powder compared with the RBSN starting material leads to an increased amount of liquid phase during densification. This results in grain growth and in a larger amount of grain boundary phase in the hot isostatically pressed material. Compared with the hot isostatically pressed RBSN samples therefore, strength decreases whereas the creep rate and the weight gain during oxidation increase.     

Microstructure and Short-Term Oxidation of Hot-Pressed Si3N4/ZrO2(+Y2O3) Ceramics

Composite ceramic materials based on Si₃N₄ and ZrO₂ stabilized by 3 mol% Y₂O₃ have been formed using aluminum isopropoxide as a precursor for the Al₂O₃ sintering aid. Densification was carred out by hot-pressing at temperatures in the range 1650° to 1800°C, and the resulting micro-structures were related to mechanical properties as well as to oxidation behavior at 1200°C. Densification at the higher temperatures resulted in a fibrous morphology of the Si₃N₄ matrix with consequent high room-temperature toughness and strength. Decomposition of the ZrO₂ grains below the oxidized surface during oxidation introduced radial stresses in the subscalar region, and from the oxidation experiments it is suggested that the ZrO₂ incorporated some N during densification.     

Oxidation of Si3N4 Alloys: Relation to Phase Equilibria in the System Si3N4-SiO2-MgO

The oxidation resistance at 1400°C of silicon nitride alloys hot-pressed with magnesia was investigated as a function of the phase content of the alloys. The extent of oxidation, the products of oxidation, their stratification, and the continuity of the oxide scale are all dependent on the initial composition. Also, the compositions of the alloys themselves change during oxidation. The findings can be interpreted on the basis of compositional paths in the equivalence phase diagram. Reasons for the outward diffusion of Mg and impurities are given and the effect of the secondary phase on oxidation kinetics is discussed.     

Diffusional Reaction-Bonding of Si3N4 Ceramics Under High Pressure

Diffusional reaction-bonding of Si₃N₄ ceramics was accomplished by maintaining surnples at 3.0 GPa and 1800°C for 1 h. Interfaces of bonded samples were examined by scanning electron microscopy, Vickers microhardness measurements, and electron probe microanalysis. These results indicate that strong bonding between sintered ceramic bodies is achieved by a diffusional reaction at high temperature and pressure .     

Comparison of High-Temperature Crack Growth in SiC-Whisker-Reinforced Mullite and Si3N4

Crack growth behavior under creep conditions was studied in SiC-whisker-reinforced mullite and silicon nitride. Tests of four-point bend specimens with indentation cracks were periodically interrupted to observe the creep behavior. At each interruption the bulk creep strain of the specimen, the growth of the indentation cracks, and the nucleation and growth of creep-induced cracks were measured. A strong linear correlation was observed in both materials between the crack growth rate and the creep strain rate. For a given strain rate, cracks in the silicon nitride composite propagated at velocities about an order of magnitude greater than those in the mullite composite. On the other hand, for similar nominal stresses, creep rates in the silicon nitride composites were about an order of magnitude less than with the mullite composite.