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The high-temperature flexural strength of hot-pressed silicon nitride (Si3N4) and Si3N4-whisker-reinforced Si3N4-matrix composites has been measured at a crosshead speed of 1.27 mm/min and temperatures up to 1400°C in a nitrogen atmosphere. Load–displacement curves for whisker-reinforced composites showed nonelastic fracture behavior at 1400°C. In contrast, such behavior was not observed for monolithic Si3N4. Microstructures of both materials have been examined by scanning and transmission electron microscopy. The results indicate that grain-boundary sliding could be responsible for strength degradation in both monolithic Si3N4 and its whisker composites. The origin of the nonelastic failure behavior of Si3N4-whisker composite at 1400°C was not positively identified but several possibilities are discussed.  相似文献   

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The high-temperature chemical stability of hot-pressed Si3N4 was studied between 600° and 1450°C. Reactions were followed by X-ray diffraction and scanning electron microscopy. In air, this material begins to oxidize at 700° to 750°C; a distinct amorphous siO2 surface layer results after 24 h at 750°C-Concomitant formation of cristobalite occurs, depending on exposure time, and is enhanced as temperature is Increased. Magnesium and calcium magnesium silicates form above 1000°C. The data suggest that impurities, e.g. Mg, Ca, and Fe, greatly lower the oxidation resistance of Si3N4 in air.  相似文献   

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Specimens of ZrB2 containing various concentrations of B4C, SiC, TaB2, and TaSi2 were pressureless-sintered and post-hot isostatic pressed to their theoretical densities. Oxidation resistances were studied by scanning thermogravimetry over the range 1150°–1550°C. SiC additions improved oxidation resistance over a broadening range of temperatures with increasing SiC content. Tantalum additions to ZrB2–B4C–SiC in the form of TaB2 and/or TaSi2 increased oxidation resistance over the entire evaluated spectrum of temperatures. TaSi2 proved to be a more effective additive than TaB2. Silicon-containing compositions formed a glassy surface layer, covering an interior oxide layer. This interior layer was less porous in tantalum-containing compositions.  相似文献   

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The effects of oxidation at 1400°C for 100 h on both surface and internal composition of commercial and laboratory hot-pressed Si3N4 with MgO or ZrO2 additives as well as chemically vapor deposited (CVD) Si3N4 were studied using X-ray diffraction. Samples were also compared to the same temperature treatments in Ar. The results indicate the grain boundaries act as rapid diffusion paths for the transport of oxygen.  相似文献   

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The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si3N4 and a Si3N4/SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si3N4 particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si3N4 particles milled with oxide additives. Monolithic Si3N4 could be sintered to 94% of theoretical density (TD) at 1500°C with nitrate additives. The sintering temperature was about 100°C lower than the case with oxide additives. After pressureless sintering at 1750°C for 2 h in N2, the bulk density of a Si3N4/20 wt% SiC composite reached 95% TD with nitrate additives.  相似文献   

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The properties of Si3N4 compositions produced by nitriding slip-cast Si bodies containing up to 16% Si3N4 grog were determined. The introduction of grog consistently lowered the densities, the room- and high-temperature strengths, and the resistance to oxidation. The open structure of the grog-containing mixes favored low-temperature gas-phase reactions leading to α-Si3N4 formation. In higher-density compositions containing predominantly Si, gas-liquid-solid reactions at higher temperatures produced a relatively greater content of the β phase.  相似文献   

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The results of two-step oxidation experiments on chemically-vapor-deposited Si3N4 and SiC at 1350°C show that a correlation exists between the presence of a Si2N2O interphase and the strong oxidation resistance of Si3N4. During normal oxidation, k p for SiC was 15 times higher than that for Si3N4, and the oxide scale on Si3N4 was found by SEM and TEM to contain a prominent Si2N2O inner layer. However, when oxidized samples are annealed in Ar for 1.5 h at 1500°C and reoxidized at 1350°C as before, three things happen: the oxidation k p increases over 55-fold for Si3N4, and 3.5-fold for SiC; the Si3N4 and SiC oxidize with nearly equal k p's; and, most significant, the oxide scale on Si3N4 is found to be lacking an inner Si2N2O layer. The implications of this correlation for the competing models of Si3N4 oxidation are discussed.  相似文献   

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The compressive creep behavior and oxidation resistance of an Si3N4/Y2Si2O7 material (0.85Si3N4+0.10SiO2+0.05Y2O3) were determined at 1400°C. Creep re sistance was superior to that of other Si3N4 materials and was significantly in creased by a preoxidation treatment (1600°C /120 h). An apparent parabolic rate constant of 4.2 × 10−11 kg2·m-4·s−1 indicates excellent oxidation resistance.  相似文献   

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Hot isostatically pressed silicon nitride was produced by densifying Si3N4 powder compacts and reaction-bonded Si3N4 (RBSN) parts with yttria as a sintering additive. The microstructure was analyzed using scanning electron microscopy, X-ray diffraction, and density measurements. The influence of the microstructure on fracture strength, creep, and oxidation behavior was investigated. It is assumed that the higher amount of oxygen in the Si3N4 starting powder compared with the RBSN starting material leads to an increased amount of liquid phase during densification. This results in grain growth and in a larger amount of grain boundary phase in the hot isostatically pressed material. Compared with the hot isostatically pressed RBSN samples therefore, strength decreases whereas the creep rate and the weight gain during oxidation increase.  相似文献   

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Thermophysical properties were investigated for zirconium diboride (ZrB2) and ZrB2–30 vol% silicon carbide (SiC) ceramics. Thermal conductivities were calculated from measured thermal diffusivities, heat capacities, and densities. The thermal conductivity of ZrB2 increased from 56 W (m K)−1 at room temperature to 67 W (m K)−1 at 1675 K, whereas the thermal conductivity of ZrB2–SiC decreased from 62 to 56 W (m K)−1 over the same temperature range. Electron and phonon contributions to thermal conductivity were determined using electrical resistivity measurements and were used, along with grain size models, to explain the observed trends. The results are compared with previously reported thermal conductivities for ZrB2 and ZrB2–SiC.  相似文献   

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The processing of stepwise graded Si3N4/SiC ceramics by pressureless co-sintering is described. Here, SiC (high elastic modulus, high thermal expansion coefficient) forms the substrate and Si3N4 (low elastic modulus, low thermal expansion coefficient) forms the top contact surface, with a stepwise gradient in composition existing between the two over a depth of ∼1.7 mm. The resulting Si3N4 contact surface is fine-grained and dense, and it contains only 2 vol% yttrium aluminum garnet (YAG) additive. This graded ceramic shows resistance to cone-crack formation under Hertzian indentation, which is attributed to a combined effect of the elastic-modulus gradient and the compressive thermal-expansion-mismatch residual stress present at the contact surface. The presence of the residual stress is corroborated and quantified using Vickers indentation tests. The graded ceramic also possesses wear properties that are significantly improved compared with dense, monolithic Si3N4 containing 2 vol% YAG additive. The improved wear resistance is attributed solely to the large compressive stress present at the contact surface. A modification of the simple wear model by Lawn and co-workers is used to rationalize the wear results. Results from this work clearly show that the introduction of surface compressive residual stresses can significantly improve the wear resistance of polycrystalline ceramics, which may have important implications for the design of contact-damage-resistant ceramics.  相似文献   

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Composite ceramic materials based on Si3N4 and ZrO2 stabilized by 3 mol% Y2O3 have been formed using aluminum isopropoxide as a precursor for the Al2O3 sintering aid. Densification was carred out by hot-pressing at temperatures in the range 1650° to 1800°C, and the resulting micro-structures were related to mechanical properties as well as to oxidation behavior at 1200°C. Densification at the higher temperatures resulted in a fibrous morphology of the Si3N4 matrix with consequent high room-temperature toughness and strength. Decomposition of the ZrO2 grains below the oxidized surface during oxidation introduced radial stresses in the subscalar region, and from the oxidation experiments it is suggested that the ZrO2 incorporated some N during densification.  相似文献   

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Diffusional reaction-bonding of Si3N4 ceramics was accomplished by maintaining surnples at 3.0 GPa and 1800°C for 1 h. Interfaces of bonded samples were examined by scanning electron microscopy, Vickers microhardness measurements, and electron probe microanalysis. These results indicate that strong bonding between sintered ceramic bodies is achieved by a diffusional reaction at high temperature and pressure .  相似文献   

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The oxidation resistance at 1400°C of silicon nitride alloys hot-pressed with magnesia was investigated as a function of the phase content of the alloys. The extent of oxidation, the products of oxidation, their stratification, and the continuity of the oxide scale are all dependent on the initial composition. Also, the compositions of the alloys themselves change during oxidation. The findings can be interpreted on the basis of compositional paths in the equivalence phase diagram. Reasons for the outward diffusion of Mg and impurities are given and the effect of the secondary phase on oxidation kinetics is discussed.  相似文献   

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