Synthesis Parameters and Their Effects on the Resistivity Anomaly in GdPr1113 Ceramic

Tetragonal Gd_1−x Pr _x BaSrCu₃O_7−δ (GdPr1113) polycrystalline high-temperature superconducting ceramic samples have been synthesized by the standard solid-state reaction process with different calcination and sintering temperatures and characterized by XRD and SEM. The optimum synthesis temperatures for obtaining single phase varied with Pr doping. Higher temperatures were necessary to obtain single phase for x ≥ 0.3. It was found that higher synthesis temperatures improved the electrical characteristics of these materials. The effects of different calcination and sintering temperatures on the anomalous hump in the ρ(T) curves observed at about 80 K is investigated. The percentage of the phase causing the anomaly decreases with the increase of the synthesis temperatures. PACS: 74.72.Bk, 74.62.Bf, 74.25.Fy     

Fluctuation-induced excess conductivity in the compounds CaREBaCu3O7−y (RE=La and Sm)

The compounds CaREBaCu₃O_7−y (RE=La and Sm) are tetragonal at room temperature withT _c between 60 and 70 K. The single-phase compounds were prepared by solid-state reaction. The resistivity was measured by a four-probe technique in a continuous flow cryostat with the temperature being controlled to an accuracy of 10 mK. The resistivity vs temperature showed a break in slope around 180 K in CaLaBaCu₃O_7−y and around 220 K in CaSmBaCu₃O_7−y . The results were analysed for fluctuation conductivity from 180 K downwards. A plot of dρ/dT vsT showed a sharp peak atT _m =69·69 K for La compound and 66·00 K for the Sm compound. Detailed analysis of the resistivity in the regionT _on to 180 K was carried out using the procedure due to Veira and Vidal. The results are discussed in this paper.     

Fluctuation-Induced Excess Conductivity in R1−x Ca x : 123 Superconductors

Fluctuation induced conductivity of Ca substitution at R sites of R_1−x Ca _x : 123 superconductors with various x and R is investigated. This work is done by using the reported data of Sedky et al. (Phys. Rev. B 58(18):12495, 1998). The logarithmic plots of Δσ and reduced temperature € reveal three different exponents corresponding to two different crossover temperatures. The first exponent at ln € (−1≥ln €≥−2) and its values are close to 1, for which order parameter dimensionalities (OPD) are two dimensional (2D). The second exponent at ln € (−2≥ln €≥−3.5) and its values are close to 2, for which OPD are neither two dimensional (2D) nor three dimensional (3D). The third exponent at ln € (−3.5≥ln €≥−8) and its values are close to 0.5, for which OPD are three dimensional (3D). The different values of the interlayer coupling are also calculated in the normal and mean field regions, respectively. Our results are discussed in terms of oxygen disorder and system anisotropy produced by Ca substitution in R _1−x Ca _x : 123 systems.     

Extraction of Critical Current Density and Flux Creep Exponent in the Magnetic Superconductor Ru-1212 Using the ac Magnetic Susceptibility Measurements

The ac susceptibility data was employed to extract the temperature dependence of the critical current density, J _c(T), as well as the variation of flux-creep exponent n(T,H _ac) with temperature and ac field amplitude in bulk samples of polycrystalline magnetic superconductor RuSr₂GdCu₂O₈ (Ru-1212). The critical state models and the collective flux-creep approximation model were successfully accounted to describe such behavior below the transition temperature. The calculated values of n(T,H) are well fitted to a power law of the following form: n(T,H)=n ₀(H)T ^−s(H), where s is field dependent exponent whose values varied from −2.4, −1.01 for field amplitudes ranging from 0.5 G and 3.8 G. The power law describing the frequency dependence of χ′ is found to be consistent with the results of the current-dependent effective activation energy of the form U(J)=U ₀ln (J _c/J). Additionally, the dependence of the current density is found to scale according as: J _c(T)=J _c0(1−T/T _c) ⁿ , where the exponent n values varied from 1.05 to 1.25. Such dependence is an indication of intergrain coupling that could be ascribed in terms of superconductor–insulator–superconductor junctions. The derived temperature dependence of J _c(T) is in good agreement with the data obtained from the measurements using the traditional “loss-maximum” approach. Furthermore, the flux-creep effect increased with increasing both ac fields and temperatures except at about 15–25 K below the onset of T _c, where a slowing down of the flux creep was observed.     

History effects in low-field magnetoresistance of BPSSCO polycrystals

Low-field (H<40 G) magnetoresistance measurements have been made on Bi_1·6Pb_0·4Sr₂Ca₂Cu₃O₁₀ polycrystals at several temperatures between 80 and 105 K. Considerable hysteresis in ρ(H) is found in a zero-field-cooled sample when the applied field is increased from 0 to a maximum value and then lowered back to 0 at all temperatures. The observation of hysteresis is taken as an evidence for field trapping in the grains. We show that the hysteresis in ρ(H) occurs for applied fields much lower than that at whichdρ(H)/dH exhibits a discontinuity. In addition, we find that when the applied magnetic field (H _a) is lowered from a maximum field, the effective intergranular field,H _eff, becomes zero forH _c>0, which gives rise to a minimum in ρ(H).     

d-Hole localization and the suppression of superconductivity in YBa2(Cu1-xZnx)3O7?y

The temperature and Zn concentration dependence of the electrical resistivity, specific heat, magnetic susceptibility, and electron paramagnetic resonance (EPR) spectra of YBa₂(Cu_1–x Zn _x )₃O_7–y withy0.1 has been measured forx0.16. In addition, the temperature and field dependence of the magnetization has been measured for 2<T<300K and 0<H<9.0T, along with the temperature and quasihydrostatic pressure dependence of the electrical resistivity for selected samples for 0<P<13 GPa. The substitution of Zn for Cu in YBa₂Cu₃O_7–y causes a rapid and nearly linear depression of the superconducting transition temperature,T _c , withT _c going to 0 K forx 0.10. YBa₂(Cu_1–x Zn _x )₃O_7–y retains the YBa₂Cu₃O_7-y orthorhombic structure forx0.16 for both the superconducting and nonsuperconducting samples. Initially, the unit cell volume increases nearly linearly with Zn content; however, an abrupt change occurs in the vicinityx=0.8–0.10. Forx<0.10, the temperature dependence of the electrical resistivity,(T), is metallic-like (d/dT>0) and increases gradually with increasing Zn content. However, forx 0.10,(T) becomes semiconductor-like, with a very rapid increase of the resistivity with increasingx. The electrical resistivity, magnetic susceptibility, EPR spectra, and specific heat all indicate that thed-holes associated with the Cu ions become localized in the nonsuperconducting phase,x>-0.10.     

Cu0.5Tl0.5Ba2Ca3Cu4−y Zn y O12−δ (y=0, 1.0, 2.0, 3.0, 3.5): Superconductor with Four ZnO2 Planes

A new Cu_0.5Tl_0.5Ba₂Ca₃Cu_4−y Zn _y O_12−δ (y=0, 1.0, 2.0, 3.0, 3.5) superconductor with four ZnO₂ planes is reported. The structure of the material remains tetragonal for all Zn doping concentration. The substitution of Zn at CuO₂ planar site was carried out following Cu_0.5Tl_0.5Ba₂Ca₃Cu_4−y Zn _y O_12−δ (y=0, 1.0, 2.0, 3.0, 3.5) formula. Contrary to all previous studies of Zn doping in all copper oxide high temperature superconductors, the zero resistivity critical temperature T _c(R=0), critical current density and quantity of diamagnetism increase with increased Zn concentration. The onset temperature of superconductivity in these samples was observed at 128 K and T _c(R=0) at 122 K for y=3.5. The volume of the unit cell observed through X-ray diffraction scan is found to decrease with increase Zn doping; promoting an increase in Fermi vector K _F and effective density of states which results in enhanced superconductivity parameters. The synthesis of Cu_0.5Tl_0.5Ba₂Ca₃Cu_4−y Zn _y O_12−δ material by this method is highly reproducible.      

Influence of sintering time and quenching on the formation of highT c phase

Influence of sintering time and quenching in Bi_{2 −x} Pb _x Ca₂Sr₂Cu₃O _y (x=0.0, 0.1, 0.2, 0.25, 0.3 and 0.4) samples have been studied by resistance and XRD measurements. In samples sintered at 850°C for 4 days,T _c(0) increases with Pb concentration.T _c(0) increased from 81 K forx=0.0 to 109 K inx=0.30 sample and then decreased. Increasing the sintering time to 10 days decreased theT _c Quenching further decreased theT _c(0). From X-ray diffraction patterns, the intensity peaks of low and highT _c phases have been measured. The addition of Pb promotes highT _c-phase. Sintering time, slow cooling and rapid quenching studies show that there is an optimum sintering time and cooling rate to produce a highT _c-phase.     

The Material-Dependent Parameter Controlling the Universal Phase Diagram of Cuprates

The critical temperature T _c in the universal phase diagram of cuprate superconductors is a function of two variables: the hole-doping δ and a material dependent parameter. Here we focus on the behavior of T _c,max as a function of the material dependent parameter (MDP) at the optimum hole doping. We have discussed the correlation between (1) the average Cu—O (planar) distance, or the strain of the Cu—O bond, (2) the nearest-neighbor hopping t′ and (3) the Lifshitz parameter z. These Lifshitz parameter z = μ_{δ = 0.16}−E _vHs which are all material dependent parameters, where μ_{δ = 0.16} is the chemical potential at optimum doping and E_vHs is the energy of the Van Hove singularity, defines the proximity to the Fermi surface topological transition from electron-like to hole-like. The results show that the striped phases occur for z < 0, the highest T _c,max for and the drop of T _c,max for z > 75 meV.     

Effects of talc and clay addition on pressureless sintering of porous Si<Subscript>3</Subscript>N<Subscript>4</Subscript> ceramics

Porous Si₃N₄ ceramics were successfully synthesized using cheaper talc and clay as sintering additives by pressureless sintering technology and the microstructure and mechanical properties of the ceramics were also investigated. The results indicated that the ceramics consisted of elongated β-Si₃N₄ and small Si₂N₂O grains. Fibrous β-Si₃N₄ grains developed in the porous microstructure, and the grain morphology and size were affected by different sintering conditions. Adding 20% talc and clay sintered at 1700°C for 2 h, the porous Si₃N₄ ceramics were obtained with excellent properties. The final mechanical properties of the Si₃N₄ ceramics were as follows: porosity, P ₀ = 45·39%; density, ρ = 1·663·g·cm⁻³; flexural strength, σ _b (average) = 131·59 MPa; Weibull modulus, m = 16·20.     

The Effect of Co Substitution on the Crystal Structure and Electrical Resistivity of (La0.85Ag0.15)MnO3 Compounds

The effect of Co substitution on the crystal structure and electrical transport properties of La_0.85Ag_0.15Mn_1−y Co _y O₃ compounds (0≥y≤0.50) has been studied. Structural transition from rhombohedral to orthorhombic symmetry has been observed with Co doping. The lattice parameters are found to increase with doping up to y=0.20, then it decreases. It is explained on the basis of transition from high spin state to low spin state of Co ions with increase in doping beyond y=0.20. Ferromagnetic (FM) metallic behavior with colossal magneto-resistivity has been observed up to y=0.10. However, for y≥0.15 compounds, the temperature dependence of resistivity ρ(T) follows semiconducting behavior. The electrical resistivity in the metallic region could be explained based on electron–electron and electron–magnon scattering mechanisms. The data in the semiconducting region could be explained based on the variable range hopping model for y=0.2 and adiabatic small polaron hopping model for y≥0.3.      

New Pb-Based 1222 Cuprates, (Pb0.5B0.5)Sr2(RE2−x−y Ce x Sr y )Cu2O z (RE = Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Y)

New Pb-based layered cuprates with the 1222 structure have been synthesized in the (Pb_0.5B_0.5)Sr₂ (RE_2−x−y Ce _x Sr _y )Cu₂O _z (RE = Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Y) systems. The almost-single-phase samples in the systems can be obtained for a nominal composition of x=0.7 and y=0.1. The crystal structure of the samples has a tetragonal symmetry, the lattice parameters of a and c are increasing with increasing the ionic radius of RE element. Despite treatment under high O₂ pressure of 100 atm, the samples are semiconductors with the transport process characteristic of three-dimensional variable range hopping conduction.     

Enhancement ofT c (∼ 103 K) in calcium-free Tl2Ba2CuO x (2201) compound

EnhancedT _c in calcium-free Tl compounds of the series Tl _m Ba₂Ca _n−1Cu _n O _x (2201) has been reported. Three different starting compositions (2201, 1201 and 2202) were studied extensively with varying conditions of preparation. Under optimized conditions (sintering temperature 970°C and duration 3–10 min) the highestT _c(onset) ranges from 103 K to ∼ 115 K andT _c (zero) ∼ 95 K was found. XRD studies showed the transformation of all the three nominal compositions into 2201 phase with differentT _cs.     

Superconducting transition temperatures in the Ru-1232 system, RuSr2(Gd1? x Ln x Ce1.8Sr0.2)Cu2O z (Ln = Sm, Dy, and Ho)

We have investigated effects of the lanthanide element Ln and the composition changes on the superconducting transition temperatureT _c in the Ru-1232 system, RuSr₂(Gd_1−x Ln _x Ce_1.8Sr_0.2)Cu₂O _z (Ln = Sm, Dy, and Ho). At first, in the case of the samples with Ln = Sm among almost the single 1232 phase samples, the values of the superconducting onset temperatureT _co are almost the same forx=0.00−0.15, and each of the lattice parametersa andc is almost constant. While, in each of the cases of the samples with Ln = Dy and Ho, the sample withx=0.05 shows the maximum values for both the superconducting onset temperatureT _co and the zero resistivity temperatureT _cz. Especially for the sample with Ln = Dy, the values ofT _co andT _cz are 18.5 and 6.5 K, respectively. These are higher than those of the mother sample of RuSr₂(GdCe_1.8Sr_0.2)Cu₂O _z . Moreover, from variations ofT _co, lattice parameters ofa andc in the RuSr₂(Gd_1−x Dy _x Ce_1.8Sr_0.2)Cu₂O _z system as a function of Dy contentx, the relationship between the superconducting transition temperature and the lattice parameters in the present system are investigated.     

The Underdoped Region of the Phase Diagram of YBa2Cu3O6+x

Here we present a reviewed phase diagram of the high-T _c superconducting YBa₂Cu₃O_{6+ x} compound, finely mapped in the strongly underdoped region (0 < x < 0.5), from the pure antiferromagnetic state to the superconducting regime. The Neèl and spin freezing temperatures have been measured by μSR experiments while the hole density per Cu atom in the CuO₂ planes has been determined from the resistive T _c and from Seebeck coefficients at 290 K. The phase diagram is discussed in comparison to those of La_{2− x} Sr _x CuO₄ and Y_{1− x} Ca _x Ba₂Cu₃O₆ cuprate systems.     

How Grain-Boundaries Influence the Intergranular Critical Current Density of Cu1−x Tl x Ba2Ca3Cu4O12−δ Superconductor Thin Films?

The insulating and metallic behavior of the grain-boundary weak links has been studied in thallium rich and the samples with small amount of thallium in the charge reservoir layer of Cu_1−x Tl _x Ba₂Ca₃Cu₄O_12−δ superconductor thin films. The influence of the nature of grain boundaries on the inter-granular critical current density (J _c) has also been investigated. From the power law dependence of H _ac∼(1−T _p/T _c) ⁿ , it was observed that n=1 gives a best fit for the J _c of thallium rich samples and n=2 provides a best fit for the J _c of the samples with small amount of thallium. The polycrystalline thin film samples showing the power law dependence of J _c as n=1 make superconductor-insulator-superconductor (SIS) type while the samples with n=2 follow superconductor-normal metal-superconductor (SNS) types of Josephson junctions. The insulating grain boundaries decrease the inter-granular Josephson coupling and hence the transport properties are suppressed.      

Interpretation of Temperature-Dependent Resistivity of La–Pb–MnO3: Role of Electron–Phonon Interaction

The present paper deals with the theoretical investigation of temperature-dependent resistivity of the perovskite manganites La_0.78Pb_0.22MnO_3-δ within the framework of the classical electron–phonon model of resistivity, i.e., the Bloch–Gruneisen model. Due to inherent acoustic (low-frequency) phonons (ω_ac) as well as high-frequency optical phonons (ω_op), the contributions to the electron–phonon resistivity have first been estimated. At low temperatures the acoustic phonons of the oxygen-breathing mode yield a relatively larger contribution to the resistivity as compared to the contribution of optical phonons. Furthermore, the nature of phonons changes around T = 215 K exhibiting a crossover from an acoustic to optical phonon regime with elevated temperature. The contribution to resistivity estimated by considering both phonons, i.e., ω_ac and ω_op, when subtracted from experimental data, infers a T^4.5 temperature dependence over most of the temperature range. Deduced T^4.5 temperature dependence of ρ_diff = [ρ_exp − {ρ₀ + ρ_e-ph( = ρ_ac + ρ_op)}] is justified in terms of electron–magnon scattering within the double exchange (DE) process. Within the proposed scheme, the present numerical analysis of temperature dependent resistivity shows similar results as those revealed by experiments     

Very Low Temperature Electronic Transport in Al-Pd-Re Quasicrystalline Alloys

Electrical resistivities of two icosahedral (I) Al-Pd-Re alloys have been measured between room temperature and mK temperatures. One quasicrystalline (QC) polygrain Al-Pd-Re sample exhibited insulating behavior in its resistivities, increasing by a factor of r=R(4 K)/R(300 K)=7.76; its room temperature resistivity was 9,890 μΩ cm. A “phenomenological” expression fitted the conductivity data well between 300 K to 0.5 K. Below 0.4 K a crossover to an activated variable-range hopping law was observed. Low temperature magnetoresistance ratio data and fits using the wave function shrinkage theory are presented. A second QC Al-Pd-Re sample had a small resistance temperature ratio r=2.12. The room temperature resistivity was extremely large, ρ(300 K)≈40,980 μΩ cm. Its conductivity could be described well using a simple temperature power law between 300 K to 20 K. Below 20 K there was a crossover to a new behavior. Below 1 K, the conductivity could be fitted using a very weakly insulating power law where σ(T)≈11.37T ^0.032 in (Ω cm)⁻¹, suggesting that this sample is located just below the metal-insulator transition. The magnetoconductivity data could not be fitted successfully using the 3D weak localization (WL) theory and inserting into it physical and realistic fitting magnitudes for the inelastic magnetic field B _in.      

Vibronic states in La{2-x}BaxCuO4BaxCuO4

The temperature dependences of the resistivity R(T) and the thermoelectric power α(itT) under different hydrostatic pressuresP for the system La_{2-x}BavCuO₄, 0.11 ≤ x < -1.6, are reported and interpreted as evidence for strong electron coupling to oxygen vibrations along the CuO-Cu bond axes of the CuO₂ sheets. The sensitivity of the transport properties to the bending Φ of the (180‡-Φ) Cu-O-Cu bond angle and their insensitivity to long-range magnetic order indicate that the segregation into hole-rich and magnetic stripe domains is driven primarily by electron-lattice interactions and not by electron-electron interactions alone.