不同Ce掺杂比的La_(1-x)Ce_xMnO_3薄膜输运性质及机理研究（英文）

研究了电子型掺杂钙钛矿薄膜La_(1-x)Ce_xMnO_3的输运性质和外场作用下的输运机理。研究表明,La_(1-x)Ce_xMnO_3薄膜呈现出典型的金属-绝缘体转变,且与Ce的掺杂浓度相关。电阻-温度曲线表明,在低温时,电子-电子散射和磁畴对电子的散射是电阻形成的主要原因,而在高温下,小极化子的跳跃机制起主要作用。通过激光照射样品表面,发现光场诱导金属-绝缘体转变温度向着低温区偏移,该现象产生的原因在于La_(1-x)Ce_xMnO_3薄膜内部铁磁相与顺磁相的共存,此外,高能量的激光对样品的电阻变化影响更明显。进一步研究表明,Ce的掺杂浓度将会通过金属-绝缘相变对La_(1-x)Ce_xMnO_3薄膜的磁电阻效应产生显著的调制作用。     

Si(100)衬底上(110)取向La_(2/3)Sr_(1/3)MnO_3薄膜的制备与性能

用脉冲激光沉积法在Si(100)衬底上制备了(110)择优取向的La2/3Sr1/3MnO3薄膜,研究了环境氧压对薄膜结晶度、取向、表面形貌和微结构的影响。结果表明:10Pa氧压下沉积的薄膜具有高结晶度的(110)择优取向,晶粒分布均匀,晶粒分布均匀,表面均方根粗糙度Rrms为1.35 nm。与无明显择优取向的薄膜相比,(110)择优取向的La2/3Sr1/3MnO3薄膜具有较高的饱和磁化强度(Ms)、金属-绝缘体相变温度(TM-I)和较低的电阻率(ρ)。     

用对靶磁控溅射附加低温热氧化处理方法制备相变氧化钒薄膜

采用直流对靶磁控溅射低价态氧化钒(VO2-x)薄膜再附加热氧化处理的方式,进行具有金属-半导体相变特性氧化钒薄膜的制备.采用X射线光电子能谱(XPS)、X射线衍射(XRD)和原子力显微镜(AFM)对薄膜中钒的价态与组分、薄膜结晶结构和表面微观形貌进行分析,利用热敏感系统对薄膜的电阻温度特性进行测量.结果表明:新制备的低价态氧化钒薄膜以V2O3和VO为主,经过300℃低温热氧化处理后,薄膜中出现单斜金红石结构的VO2相,薄膜具有金属-半导体相变特性;薄膜表面颗粒之间存在间隙,利于氧的渗入:在300～320℃进行热处理时,薄膜中的V2O3和VO向单斜结构的VO2转变,VO2含量增加,随着薄膜内VO2含量的增加,薄膜的金属-半导体相变幅度增大,超过2个数量级,相变性能变好,但是此热处理温度区间对已获得的VO2的结构没有影响.同时利用直流对靶磁控溅射方法还可以在低氧化温度下获得具有优异金属-半导体相变特性的氧化钒薄膜,制备工艺与微机械电子系统(MEMS)工艺相兼容.     

脉冲激光沉积镀膜工艺中不同靶材制备方法对La_(0.72)Ca_(0.28)MnO_3薄膜电学性能和激光感生电压的影响（英文）

采用脉冲激光沉积方法在单晶LaAlO3(100)平衬底和15°倾斜衬底上制备La0.72Ca0.28MnO3薄膜。在镀膜过程中分别采用溶胶-凝胶法和共沉淀法制备靶材。研究不同方法制备的靶材和相应的薄膜的结构、电输运性能和表面形貌。与共沉淀法相比,采用溶胶-凝胶法制备的靶材具有更加均匀的组分和更大的致密度以及晶粒尺寸,因此具有更高的绝缘体-金属转变温度和更大的电阻温度系数。采用溶胶-凝胶靶材制备的薄膜,其晶粒尺寸更均匀、生长质量更好,绝缘体-金属转变温度高20 K,激光感生电压也更大。因此,使用溶胶-凝胶方法制备靶材可以大幅提高脉冲激光沉积方法中薄膜的性能。     

高分子辅助沉积法制备Sm_xNd_(1-x)NiO_3外延薄膜（英文）

采用高分子辅助沉积法制备掺杂不同钐(Sm)含量的Sm_xNd_(1-x)NiO_3外延薄膜(钐掺杂量x=0.5,0.55,0.6)。X射线衍射(特征θ-2θ扫描、摇摆曲线和φ-scan)和扫描电子显微镜的测试结果表明,制备的薄膜结晶性和外延性良好,与衬底的(001)取向保持一致。电阻率-温度曲线表明制备的外延薄膜均表现出金属绝缘体转变现象。随着Sm掺杂量的提高,金属绝缘体转变温度逐渐升高;当;x=0.55时,外延薄膜的转变温度在室温附近。并且高分子辅助沉积法可以简单有效地制备热致变色外延薄膜。     

La0.3Sr0.7FeO3薄膜的输运和光诱导特性研究

采用射频(RF)磁控溅射法制备稀土掺杂铁氧化物La0.3Sr0.7FeO3(LSFO)薄膜。电阻-温度关系表明,薄膜在测量温度范围内呈现半导体导电特性,其主要源于Fe3+和Fe5+离子的电荷有序排列,同时薄膜在250K时发生电荷有序态转变。激光作用诱导薄膜电阻减小,且光致电阻相对变化在190K时取得极大值为56.3%。利用变程跳跃模型对电阻温度曲线进行分析讨论,表明激光作用的内在机制是激光辐照诱导电子退局域化。     

不同Ce掺杂比例对La1-xCexMnO3薄膜输运性质及机理研究

本文中研究了电子型掺杂钙钛矿薄膜La_1-xCe_xMnO₃的输运性质和外场作用下的输运机理。研究表明,La_1-xCe_xMnO₃薄膜呈现出典型的金属-绝缘体转变,且与Ce的掺杂浓度相关。电阻温度曲线表明,在低温时,电子-电子散射和磁畴对电子的散射是电阻形成的主要原因,而在高温下小极化子的跳跃机制起主要贡献。通过激光照射样品表面,发现光场诱导金属绝缘体转变温度向着低温区间偏移,该现象产生的原因在于La_1-xCe_xMnO₃薄膜内部铁磁相与顺磁相的共存,此外,高能量的激光对样品的电阻变化影响更明显。进一步研究表明,Ce的掺杂浓度将会通过金属-绝缘相变对La_1-xCe_xMnO₃的磁电阻效应产生显著的调制作用。本文将为新型能量转换器件的开发与应用提供新的研究思路。     

一价Na元素对LaMnO_3母体A位掺杂的磁电性质研究(英文)

通过测量La1-xNaxMnO3(x=0.05,0.10,0.15,0.20,0.25,0.33)体系的M-T曲线和R-T曲线,研究了La位Na掺杂对体系磁电性质的影响.结果发现:随着Na掺杂浓度的增加,体系居里温度Tc升高,顺磁-铁磁相变逐渐变陡;伴随着顺磁-铁磁相变,体系发生金属-绝缘体相变,电阻随掺杂浓度增加而下降.体系磁电性质的变化来源于掺杂引起的Mn3+-O-Mn4+间的双交换作用、静态Jahn-Teller畸变和公差因子的变化.     

La0.75Ca0.25MnO3多晶陶瓷与外延薄膜的结构和电学性能研究

采用溶胶-凝胶法制备了La0.75Ca0.25MnO3多晶靶材,并用紫外脉冲激光沉积法(PLD)在LaAlO3(100)单晶衬底上制备了La0.75Ca0.25MnO3外延薄膜。采用XRD测试了薄膜的晶体结构和生长取向,测试了薄膜(200)衍射峰摇摆曲线并分析了薄膜的结晶质量。利用原子力显微镜(AFM)表征了薄膜表面形貌,并利用四探针法测试了薄膜的电阻-温度(R-T)曲线。实验结果显示薄膜结晶质量较好,并沿c轴择优生长,且生长方式为层状生长。薄膜的绝缘体-金属转变温度(TIM)达到270 K以上,电阻温度系数(TCR)高达10%。     

共溅射氧化法制备掺钼VO_2及其相变特性

采用共溅射氧化法,在普通玻璃衬底上室温直流溅射沉积钒钼金属薄膜,再在大气环境下经热氧化处理获得掺钼VO2薄膜。通过XRD、SEM、热致相变电学特性等分析,研究制备工艺及掺杂改性对掺钼VO2薄膜的微结构、形貌、热滞回线和相变温度的影响。实验与分析结果表明,与相同厚度的纯VO2薄膜相比,钼掺杂显著改变了VO2薄膜的表面形貌特征,掺钼VO2薄膜呈多晶态且沿VO2(002)择优取向生长,结晶性和取向性明显提高,薄膜的相变温度降低至38℃,热滞回线宽度收窄约至8℃。低温共溅射氧化法制备的掺钼VO2薄膜的热阻效应明显,薄膜的金属-半导体相变特性良好。     

Microstructures and electrical responses of pure and chromium-doped CaCu3Ti4O12 ceramics

Pure and chromium-doped CCTO (CaCu₃Ti₄O₁₂) ceramics were prepared by a conventional solid-state reaction method, and the effects of chromium doping on the microstructures and electrical properties of these ceramics were investigated. Efficient crystalline phase formation accompanied by dopant-induced lattice constant expansion was confirmed through X-ray diffraction studies. Scanning electron microscopy (SEM) results show that doping effectively enhanced grain growth or densification, which should increase the complex permittivity. The dielectric constant reached a value as high as 20,000 (at 1 kHz) at a chromium-doping concentration of 3%. The electrical relaxation and dc conductivity of the pure and chromium-doped CCTO ceramics were measured in the 300-500 K temperature range, and the electrical data were analyzed in the framework of the dielectric as well as the electric modulus formalisms. The obtained activation energy associated with the electrical relaxation, determined from the electric modulus spectra, was 0.50-0.60 eV, which was very close to the value of the activation energy for dc conductivity (0.50 ± 0.05 eV). These results suggest that the movement of oxygen vacancies at the grain boundaries is responsible for both the conduction and relaxation processes. The short-range hopping of oxygen vacancies as “polarons” is similar to the reorientation of the dipole and leads to dielectric relaxation. The proposed explanation of the electric properties of pure and chromium-doped CCTO ceramics is supported by the data from the impedance spectrum.     

均匀自支撑的二氧化钒纳米线的水热合成及相变特性研究

二氧化钒(VO₂)在接近室温时发生由半导体态向金属态的Mott相变,在智能窗和红外自适应伪装技术领域具有一定的应用前景。本文采用一种新颖的水热法制备均匀自支撑的VO₂纳米线。合成的纳米线的直径为150±30 nm,长度达到几十微米。通过X射线衍射、X射线光电子能谱、高分辨透射电镜和选取电子衍射等手段验证了高纯单斜相VO₂纳米线的成功制备。而且,VO₂纳米线的可逆相变性能采用差示量热扫描、变温XRD和变温Raman光谱进行了探究。结果表明：VO₂纳米线升温相变点为65.2 °C,磁滞回线宽度窄至6.5 °C,具有良好的可逆相变性。这些为VO₂纳米线的金属-半导体相变研究提供基础。     

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Abstract

The tarnishing of silver in bromine vapour in the temperature range 35°–70°c, at bromine pressures between 25·3–404 Nm^?2 (0·19–3·03 mm Hg)followed a cubic rate law. This has not been reported so far for this system. The mechanism proposed by Mott to account for a cubic growth law seems to apply to the present work. This may be because of the relatively small thickness of the film (? 1600Å) and the persistence of the electrical field throughout the layer. An activation energy of ～37·6 kJ mole^?1 in the above temperature range supports the hypothesis that the creation of positive holes at the outer interface is the rate-determining factor. The direct proportionality between the rate constant and the partial pressure of the bromine suggests that a steady state condition is not attained at the phase boundaries because of the thinness of the bromide film.     

Electronic transport in polycrystalline samples of icosahedral phases

The low-temperature electronic transport in polycrystals of quasicrystalline phases with an icosahedral structure has been analyzed within the model of the granular electronic system. In this model, the grains (drops) of a metallic icosahedral phase are surrounded by extended defects and grain boundaries, which create an insulating environment. The electron transport in this model is determined by the size quantization of electronic states inside metallic grains, by intergranular tunneling, and by electrostatic barriers. Depending on the temperature and structural state of the system, the hopping conductivity with variable lengths of jumps in the Efros–Shklovskii or Mott regime is observed with predominantly elastic cotunneling. In the case of strong intergranular coupling, the system passes into the metallic regime with the exponential temperature dependence of the electrical conductivity.     

The effect of pressure on anion ordering in (TMTSF)2BF4

We have measured, via electrical transport measurements, the effect of pressure on the anion ordering (AO) transition in (TMTSF)₂BF₄. The effect of low pressures (<3.5 kbar) is to lower the metal-insulator (MI) transition temperature associated with the AO of the BF₄⁻ anions. In the intermediate pressure range (4–7 kbar) the resistivity exhibits anomalous behaviour, peaking at 20 K, the detailed behaviour depending on both the pressure and thermal treatment. In the same pressure/temperature range, the thermoelectric power remains metallic, indicating that the resistive anomalies result from a change in the carrier mobility. Above 7 kbar, the resistivity is metallic down to low temperatures, and incomplete superconductivity is observed in several samples.     

Thermal studies on polyindole and polycarbazole

The time and temperature dependences of conductivity of electrochemically prepared polyindole and polycarbazole perchlorates are analysed to understand the aging process and mechanism of conduction. Arrhenius and Mott plots suggest a variable range hopping (VRH) mechanism for polyindole and nearest-neighbour hopping for polycarbazole. The degradation behaviour has been studied by thermogravimetry (TG) and differential thermal analysis (DTA) techniques. The thermal reactions involve loss of dopant, followed by degradation of the polymer backbone. The decomposition temperatures of polyindole and polycarbazole are higher than the values reported in the literature for polyaniline, polypyrrole and polythiophene. The energy of activation for the polymer degradation process has been calculated using three methods and the results are compared.     

钛酸铋钠基压电材料制备技术研究进展

钛酸铋钠(BNT)基压电材料因具有较好的电学性能以及高居里温度等优点,成为了压电材料领域的研究热点之一。如何制备出性能优异的钛酸铋钠基压电材料,是满足各个领域应用要求的重要环节。重点综述了近年来钛酸铋钠基压电材料制备技术的研究进展,从固相烧结、放电等离子烧结以及微波烧结等角度对其烧结技术进行论述;从溶胶-凝胶、脉冲激光沉积和射频磁控溅射等角度对其薄膜制备技术进行综述;对热喷涂制备压电涂层的机理和工艺进行总结。结果表明,烧结温度是影响块体材料结构和性能的关键因素,其中放电等离子烧结与微波烧结相较于传统的固相烧结能够有效控制材料的烧结温度;在钛酸铋钠薄膜的制备中对沉积温度、氧气压力以及退火温度的控制可以有效提高薄膜电学性能;热喷涂制备的钛酸铋钠涂层通过热处理工艺能够改善涂层的电学性能,并且热喷涂能够在复杂零件表面实现压电涂层的可控制备,其中钛酸铋钠压电陶瓷薄膜和涂层的制备扩展了其应用范围。最后,展望了压电陶瓷材料技术的未来发展趋势,为压电材料制备技术的研究提供了一定的参考。     

DC conductivity study of polyaniline and poly(acrylonitrile-butadiene-styrene) blends

In this study, conducting blends of poly(acrylonitrile-butadiene-styrene) and polyaniline doped with dodecylbenzene sulfonic acid were prepared by solution blending. In order to understand the electrical conduction mechanism of the samples, DC electrical conductivity measurements of the blends were carried out in the temperature range of 80–320 K. The experimental results fit well with Mott's model of three-dimensional variable range hopping conduction. The values of Mott's temperature, density of states at the Fermi energy, average hopping distance and barrier height for the composites were calculated and presented.     

低温制备MAX相薄膜:成相与性能研究进展∗

MAX 相薄膜材料是材料研究的热点之一。 综述了 MAX 相薄膜的制备技术,介绍了典型的促进 MAX 相薄膜低温成相的方法,分析讨论了低温沉积 MAX 相薄膜的影响因素和生长机理,指出 MAX 相薄膜的制备难点主要是在降低温度和减少杂质相的生成。 统计并对比分析了文献中 MAX 相薄膜材料的几项主要使用性能的数据,包括导电性、耐腐蚀性能、硬度和模量,指出 MAX 相薄膜材料的耐腐蚀性能数据还不够充分和系统,甚至存在一定的不一致性,对其耐腐蚀性能的行为和机理需要更多的研究。