Reduction in thermal conductivity of Bi thin films with high-density ordered nanoscopic pores

We prepared two-dimensional Bi thin films with high-density ordered nanoscopic pores by e-beam evaporation of Bi metal. For this structure, we used polystyrene beads ranging from 200 to 750 nm in diameter as an etch mask. The typical hole and neck sizes of the Bi thin films with approximately 50 nm in thickness on SiO₂/Si substrates were in the range of 135 to 490 nm and 65 to 260 nm, respectively. By measuring the thermal characteristics through a 3ω technique, we found that the thermal conductivities of nanoporous Bi thin films are greatly suppressed compared with those of corresponding bulk materials. With a decrease in pore size to approximately 135 nm, the thermal conductivity decreased significantly to approximately 0.46 W/m·K at 300 K.     

Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires

Single-crystalline Cu₇In₃/CuIn_0.8Ga_0.2Se₂ (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm.

PACS

61.46. + w; 61.41.e; 81.15.Fg; 81.07.b     

CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure

Cu₂ZnSnSe₄ (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe _x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein.     

Ferromagnetism and optical properties of La1???x Al x FeO3 nanopowders

La_{1 − x} Al _x FeO₃ (x = 0.0, 0.05, 0.1, 0.2, 0.3, 0.4, and 0.5) nanopowders were prepared by polymerization complex method. All prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR), and UV-vis spectrophotometry (UV-vis). The magnetic properties were investigated using a vibrating sample magnetometer (VSM). The X-ray results of all samples show the formation of an orthorhombic phase with the second phase of α-Fe₂O₃ in doped samples. The crystallite sizes of nanoparticles decreased with increasing Al content, and they are found to be in the range of 58.45 ± 5.90 to 15.58 ± 4.64 nm. SEM and TEM images show the agglomeration of nanoparticles with average particle size in the range of 60 to 75 nm. The FT-IR spectra confirm the presence of metal oxygen bonds of O-Fe-O and Fe-O in the FeO₆ octahedra. The UV-vis spectra show strong absorption peaks at approximately 285 nm, and the calculated optical band gaps are found to be in the range of 2.05 to 2.09 eV with increasing Al content. The M-H loop of the pure sample is antiferromagnetic, whereas those of the doped samples tend to be ferromagnetic with increasing Al content. The magnetization, remanent magnetization, and coercive field of the Al-doped sample with x = 0.5 are enhanced to 1.665 emu/g, 0.623 emu/g, and 4,087.0 Oe, respectively.     

Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes

We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga₂O₃ NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga₂O₃ NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga₂O₃ films (current level 9.9 × 10^-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga₂O₃ NP/SWNT increased by approximately 4 × 10⁵ times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10^-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga₂O₃ NPs and high conductivity and effective current spreading of SWNTs.     

Fe effect on the optical properties of TiO2:Fe2O3 nanostructured composites supported on SiO2 microsphere assemblies

The effect of Fe ion concentration on the morphological, structural, and optical properties of TiO₂ films supported on silica (SiO₂) opals has been studied. TiO₂:Fe₂O₃ films were prepared by the sol-gel method in combination with a vertical dip coating procedure; precursor solutions of Ti and Fe were deposited on a monolayer of SiO₂ opals previously deposited on a glass substrate by the same procedure. After the dip coating process has been carried out, the samples were thermally treated to obtain the TiO₂:Fe₂O₃/SiO₂ composites at the Fe ion concentrations of 1, 3, and 5 wt%. Scanning electron microscopy (SEM) micrographs show the formation of colloidal silica microspheres of about 50 nm diameter autoensembled in a hexagonal close-packed fashion. Although the X-ray diffractograms show no significant effect of Fe ion concentration on the crystal structure of TiO₂, the μ-Raman and reflectance spectra do show that the intensity of a phonon vibration mode and the energy bandgap of TiO₂ decrease as the Fe⁺³ ion concentration increases.     

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures

Thermal atomic layer-deposited (ALD) aluminum oxide (Al₂O₃) acquires high negative fixed charge density (Q_f) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Q_f can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al₂O₃ films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Q_f obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Q_f. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiO_x/Si interface region decreased with increased temperature. Measurement results of Q_f proved that the Al vacancy of the bulk film may not be related to Q_f. The defect density in the SiO_x region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.     

Efficient solar photocatalyst based on cobalt oxide/iron oxide composite nanofibers for the detoxification of organic pollutants

A Co₃O₄/Fe₂O₃ composite nanofiber-based solar photocatalyst has been prepared, and its catalytic performance was evaluated by degrading acridine orange (AO) and brilliant cresyl blue (BCB) beneath solar light. The morphological and physiochemical structure of the synthesized solar photocatalyst was characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectroscopy (FTIR). FESEM indicates that the Co₃O₄/Fe₂O₃ composite has fiber-like nanostructures with an average diameter of approximately 20 nm. These nanofibers are made of aggregated nanoparticles having approximately 8.0 nm of average diameter. The optical properties were examined by UV-visible spectrophotometry, and the band gap of the solar photocatalyst was found to be 2.12 eV. The as-grown solar photocatalyst exhibited high catalytic degradation in a short time by applying to degrade AO and BCB. The pH had an effect on the catalytic performance of the as-grown solar photocatalyst, and it was found that the synthesized solar photocatalyst is more efficient at high pH. The kinetics study of both AO and BCB degradation indicates that the as-grown nanocatalyst would be a talented and efficient solar photocatalyst for the removal of hazardous and toxic organic materials.     

Direct bandgap materials based on the thin films of SexTe100 ? x nanoparticles

In this study, we fabricated thin films of Se_xTe_{100 − x} (x = 0, 3, 6, 9, 12, and 24) nanoparticles using thermal evaporation technique. The results obtained by X-ray diffraction show that the as-synthesized nanoparticles have polycrystalline structure, but their crystallinity decreases by increasing the concentration of Se. They were found to have direct bandgap (E_g), whose value increases by increasing the Se content. These results are completely different than those obtained in the films of Se_xTe_{100 − x} microstructure counterparts. Photoluminescence and Raman spectra for these films were also demonstrated. The remarkable results obtained in these nanoparticles specially their controlled direct bandgap might be useful for the development of optical disks and other semiconductor devices.     

Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications

In this article, the resistive switching (RS) behaviors in Lu₂O₃ thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous Lu₂O₃ thin films with a thickness of 20 nm were deposited at room temperature by radio-frequency magnetron sputtering on flexible polyethylene terephthalate substrate. The structural and morphological changes of the Lu₂O₃ thin film were characterized by x-ray diffraction, atomic force microscopy, and x-ray photoelectron spectroscopy analyses. The Ru/Lu₂O₃/ITO flexible memory device shows promising RS behavior with low-voltage operation and small distribution of switching parameters. The dominant switching current conduction mechanism in the Lu₂O₃ thin film was determined as bulk-controlled space-charge-limited-current with activation energy of traps of 0.33 eV. The oxygen vacancies assisted filament conduction model was described for RS behavior in Lu₂O₃ thin film. The memory reliability characteristics of switching endurance, data retention, good flexibility, and mechanical endurance show promising applications in future advanced memory.     

Production of Galactooligosaccharides Using β-Galactosidase Immobilized on Chitosan-Coated Magnetic Nanoparticles with Tris(hydroxymethyl)phosphine as an Optional Coupling Agent

β-Galactosidase was immobilized on chitosan-coated magnetic Fe₃O₄ nanoparticles and was used to produce galactooligosaccharides (GOS) from lactose. Immobilized enzyme was prepared with or without the coupling agent, tris(hydroxymethyl)phosphine (THP). The two immobilized systems and the free enzyme achieved their maximum activity at pH 6.0 with an optimal temperature of 50 °C. The immobilized enzymes showed higher activities at a wider range of temperatures and pH. Furthermore, the immobilized enzyme coupled with THP showed higher thermal stability than that without THP. However, activity retention of batchwise reactions was similar for both immobilized systems. All the three enzyme systems produced GOS compound with similar concentration profiles, with a maximum GOS yield of 50.5% from 36% (w·v⁻¹) lactose on a dry weight basis. The chitosan-coated magnetic Fe₃O₄ nanoparticles can be regenerated using a desorption/re-adsorption process described in this study.     

Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories

Enhanced resistive switching phenomena of IrO_x/GdO_x/W cross-point memory devices have been observed as compared to the via-hole devices. The as-deposited Gd₂O₃ films with a thickness of approximately 15 nm show polycrystalline that is observed using high-resolution transmission electron microscope. Via-hole memory device shows bipolar resistive switching phenomena with a large formation voltage of -6.4 V and high operation current of >1 mA, while the cross-point memory device shows also bipolar resistive switching with low-voltage format of +2 V and self-compliance operation current of <300 μA. Switching mechanism is based on the formation and rupture of conducting filament at the IrO_x/GdO_x interface, owing to oxygen ion migration. The oxygen-rich GdO_x layer formation at the IrO_x/GdO_x interface will also help control the resistive switching characteristics. This cross-point memory device has also Repeatable 100 DC switching cycles, narrow distribution of LRS/HRS, excellent pulse endurance of >10,000 in every cycle, and good data retention of >10⁴ s. This memory device has great potential for future nanoscale high-density non-volatile memory applications.     

Enhanced thermoelectric properties induced by chemical pressure in Ca3Co4O9

We report the investigation of boron substitution on structural, electrical, thermal, and thermoelectric properties of Ca_3−xB_xCo₄O₉ (x=0, 0.5, 0.75, and 1) in the temperature range between 300 K and 5 K. X-ray diffraction studies show that the Ca₃Co₄O₉ phase is successfully preserved as the majority phase in the x=0.5 sample despite the small size of boron ions. Electrical transport measurements confirm that B³⁺ substitution for Ca²⁺ causes an increase in resistivity due to the decrease in carrier concentration. x=0.5 sample is found to have a Seebeck coefficient of 181 μV/K at room temperature which is ~1.5 times higher than that of the pure Ca₃Co₄O₉. Our results indicate that the chemical pressure due to the large ionic radii difference between B³⁺ (0.27 Å) and Ca²⁺ (1 Å) enhances the thermoelectric properties as long as the unique crystal structure of Ca₃Co₄O₉ is preserved.     

Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition

Growing Ga₂O₃ dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga₂O₃ nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to the typical synthesis temperature of above 1,000°C as reported by other methods. In this work, the prepared β-Ga₂O₃ nanowires are mainly composed of Ga and O elements with an atomic ratio of approximately 2:3. Importantly, they are highly crystalline in the monoclinic structure with varied growth orientations in low-index planes. The bandgap of the β-Ga₂O₃ nanowires is determined to be 251 nm (approximately 4.94 eV), in good accordance with the literature. Also, electrical characterization reveals that the individual nanowire has a resistivity of up to 8.5 × 10⁷ Ω cm, when fabricated in the configuration of parallel arrays, further indicating the promise of growing these highly insulating Ga₂O₃ materials in this III-V nanowire-compatible growth condition.

PACS

77.55.D; 61.46.Km; 78.40.Fy     

Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

A sample of the β-Ga₂O₃/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga₂O₃ layer was formed epitaxially on GaN. The valence band offset of the β-Ga₂O₃/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga₂O₃/GaN structure is 1.40 ± 0.08 eV.     

Magnetic properties of fluffy Fe@α-Fe2O3 core-shell nanowires

Novel fluffy Fe@α-Fe₂O₃ core-shell nanowires have been synthesized using the chemical reaction of ferrous sulfate and sodium borohydride, as well as the post-annealing process in air. The coercivity of the as-synthesized nanowires is above 684 Oe in the temperature range of 5 to 300 K, which is significantly higher than that of the bulk Fe (approximately 0.9 Oe). Through the annealing process in air, the coercivity and the exchange field are evidently improved. Both the coercivity and the exchange field increase with increasing annealing time (T_A) and reach their maximum values of 1,042 and 78 Oe, respectively, at T_A = 4 h. The magnetic measurements show that the effective anisotropy is increased with increasing the thickness of theα-Fe₂O₃ by annealing. The large values of coercivity and exchange field, as well as the high surface area to volume ratio, may make the fluffy Fe@α-Fe₂O₃ core-shell nanowire a promising candidate for the applications of the magnetic drug delivery, electrochemical energy storage, gas sensors, photocatalysis, and so forth.     

Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >10⁵ cycles, and good data retention of >10⁴ s with a good resistance ratio of >10² at 85°C are obtained using a Ti nanolayer to form a W/TiO_x/TaO_x/W structure under a low current operation of 80 μA, while few switching cycles are observed for W/TaO_x/W structure under a higher current compliance >300 μA. The low resistance state decreases with increasing current compliances from 10 to 100 μA, and the device could be operated at a low RESET current of 23 μA. A small device size of 150 × 150 nm² is observed by transmission electron microscopy. The presence of oxygen-deficient TaO_x nanofilament in a W/TiO_x/TaO_x/W structure after switching is investigated by Auger electron spectroscopy. Oxygen ion (negative charge) migration is found to lead to filament formation/rupture, and it is controlled by Ti nanolayer at the W/TaO_x interface. Conducting nanofilament diameter is estimated to be 3 nm by a new method, indicating a high memory density of approximately equal to 100 Tbit/in.².     

Si-rich Al2O3 films grown by RF magnetron sputtering: structural and photoluminescence properties versus annealing treatment

Silicon-rich Al₂O₃ films (Si_x(Al₂O₃)_1−x) were co-sputtered from two separate silicon and alumina targets onto a long silicon oxide substrate. The effects of different annealing treatments on the structure and light emission of the films versus x were investigated by means of spectroscopic ellipsometry, X-ray diffraction, micro-Raman scattering, and micro-photoluminescence (PL) methods. The formation of amorphous Si clusters upon the deposition process was found for the films with x ≥ 0.38. The annealing treatment of the films at 1,050°C to 1,150°C results in formation of Si nanocrystallites (Si-ncs). It was observed that their size depends on the type of this treatment. The conventional annealing at 1,150°C for 30 min of the samples with x = 0.5 to 0.68 leads to the formation of Si-ncs with the mean size of about 14 nm, whereas rapid thermal annealing of similar samples at 1,050°C for 1 min showed the presence of Si-ncs with sizes of about 5 nm. Two main broad PL bands were observed in the 500- to 900-nm spectral range with peak positions at 575 to 600 nm and 700 to 750 nm accompanied by near-infrared tail. The low-temperature measurement revealed that the intensity of the main PL band did not change with cooling contrary to the behavior expected for quantum confined Si-ncs. Based on the analysis of PL spectrum, it is supposed that the near-infrared PL component originates from the exciton recombination in the Si-ncs. However, the most intense emission in the visible spectral range is due to either defects in matrix or electron states at the Si-nc/matrix interface.     

Hydrothermal epitaxy and resultant properties of EuTiO3 films on SrTiO3(001) substrate

We report a novel epitaxial growth of EuTiO₃ films on SrTiO₃(001) substrate by hydrothermal method. The morphological, structural, chemical, and magnetic properties of these epitaxial EuTiO₃ films were examined by scanning electron microscopy, transmission electron microscopy, high-resolution X-ray diffractometry, X-ray photoelectron spectroscopy, and superconducting quantum interference device magnetometry, respectively. As-grown EuTiO₃ films with a perovskite structure were found to show an out-of-plane lattice shrinkage and room-temperature ferromagnetism, possibly resulting from an existence of Eu³⁺. Postannealing at 1,000°C could reduce the amount of Eu³⁺, relax the out-of-plane lattice shrinkage, and impact the magnetic properties of the films.

PACS

81.10.Aj; 81.15.-z; 61.05.-a     

Thermoelectric properties of Ca0.8Dy0.2MnO3 synthesized by solution combustion process

High-quality Ca_0.8Dy_0.2MnO₃ nano-powders were synthesized by the solution combustion process. The size of the synthesized Ca_0.8Dy_0.2MnO₃ powders was approximately 23 nm. The green pellets were sintered at 1150-1300°C at a step size of 50°C. Sintered Ca_0.8Dy_0.2MnO₃ bodies crystallized in the perovskite structure with an orthorhombic symmetry. The sintering temperature did not affect the Seebeck coefficient, but significantly affected the electrical conductivity. The electrical conductivity of Ca_0.8Dy_0.2MnO₃ increased with increasing temperature, indicating a semiconducting behavior. The absolute value of the Seebeck coefficient gradually increased with an increase in temperature. The highest power factor (3.7 × 10^-5 Wm^-1 K^-2 at 800°C) was obtained for Ca_0.8Dy_0.2MnO₃ sintered at 1,250°C. In this study, we investigated the microstructure and thermoelectric properties of Ca_0.8Dy_0.2MnO₃, depending on sintering temperature.