加热和水处理共同调控PbI2薄膜形貌及其在钙钛矿太阳电池中的应用研究

该文研究加热和水处理共同作用对PbI₂薄膜形貌的调控和对钙钛矿太阳电池性能的影响。使用的钙钛矿体系为（FAPbI₃）_1-x（MAPbBr₃）_x,并在两步法工艺基础上对PbI₂薄膜进行不同时间加热和短时间水处理可将PbI₂薄膜制备成多孔结构。将双重处理后的PbI₂薄膜制备成钙钛矿薄膜后,可发现钙钛矿薄膜质量明显提升,表现在：钙钛矿的晶粒尺寸明显增大、结晶性增强、吸光能力提升、载流子传输更快。且此种方式能有效调控钙钛矿薄膜中的PbI₂残留量。在器件效率方面,只对PbI₂薄膜进行加热处理制备的电池的开路电压、短路电流、填充因子和效率分别为1.05 V、23.12 mA/cm²、73.81%和17.92%,而在最优双重处理工艺下制备的电池的这4个相应的参数分别为1.09 V、24.75 mA/cm²、77.85%和21.10%。     

上转换材料TiO2∶Er3+/Yb3+/Li+的制备及其在玻璃盖板中的应用

采用溶胶凝胶法和旋转镀膜法制备Er³⁺/Yb³⁺/Li⁺掺杂TiO₂胶体和薄膜,确定上转换材料最优制备方案为n(乙酰丙酮)∶n(C₁₆H₃₆O₄Ti∶H₂O)∶n(异丙醇)∶n(Er(NO₃)₃·5H₂O)∶n(Yb(NO₃)₃·5H₂O)∶n(LiNO₃)=1∶3∶9∶70∶0.12∶0.60∶0.15(物质的量之比),水的滴加速率为10 s/滴,溶液pH值为2～3,溶胶呈透明均匀淡黄色。吸收光谱在近红外区峰值明显。可见光透光率最高可达94.42%,较普通玻璃提高1%～2%。光伏组件通过光电转换效率测量系统进行检测,玻璃盖板镀膜后光伏组件的光电转换效率从16.5%升至17.2%,增加约0.7%。研究结果表明,该薄膜可提高玻璃盖板透光率,扩大光伏组件光谱吸收范围...     

反溶剂对CsPbBr3太阳电池性能的影响

分别在钙钛矿前驱体中添加一系列的反溶剂乙酸乙酯(EA)和乙腈(ACN),制备出不同形貌的CsPbBr₃薄膜,探究薄膜质量与太阳电池性能的内在联系。结果表明,在大气制备环境中,反溶剂有助于CsPbBr₃晶粒的生长,薄膜表面缺陷明显减少,太阳电池各性能参数(短路电流密度、开路电压以及填充因子)均有所提升,尤其是添加乙腈(V(PbBr₂/DMF)∶V(ACN)=10∶1)后,光电转换效率(PCE)从3.16%提高到7.10%。     

锑基硫属化合物半导体及太阳电池

锑基硫属化合物是一类性质稳定、环境友好、元素含量丰富、带隙连续可调、光电性质优异的半导体材料,包括硒化锑（Sb₂Se₃）、硫化锑（Sb₂S₃）以及硒硫化锑[Sb₂(S,Se)₃]等。其中,Sb₂(S,Se)₃的带隙和太阳光谱的匹配度较高,比较适合作为太阳电池的光吸收层材料。以Sb₂(S,Se)₃为光吸收层的太阳电池取得了10% 的认证能量转换效率,显示了锑基硫属化合物太阳电池的巨大潜力。本文详细阐述了锑基硫属化合物的材料及光电特性、薄膜制备工艺及缺陷特性。结合近年来锑基硫属化合物太阳电池的研究进展,提出进一步提高锑基硫属化合物太阳电池性能的方向和策略。     

MoO3界面修饰提升刮涂钙钛矿太阳电池性能

在空穴传输层Spiro-OMeTAD和Ag电极之间引入三氧化钼(MoO₃)空穴修饰层,并研究其对空气中刮涂的钙钛矿太阳电池光伏性能的影响,结合导电性测试、稳态光致发光光谱和水接触角测试等探究其影响机制。实验和测试结果表明MoO₃可提升空穴传输能力和减小界面电阻,同时对下方的Spiro-OMeTAD及钙钛矿起到保护作用,可减缓空气中水氧侵蚀。基于MoO₃界面修饰层的在空气中刮涂制备的钙钛矿太阳电池光电转换效率由15.14%提升至18.30%,尤其是填充因子的平均值由60%提升至76%,电池稳定性得到改善,未封装电池在400 h后仍保持初始效率的90%。     

晶硅异质结太阳电池nc-Si:H/nc-SiOx:H叠层窗口层研究

该研究制备高电导、高透明的磷掺杂氢化纳米晶硅氧(nc-Si O_x:H)薄膜,应用于晶硅异质结(SHJ)太阳电池的窗口层以替代传统的氢化非晶硅(a-Si:H)薄膜。与以a-Si:H薄膜为窗口层的电池相比,短路电流密度提高0.5 m A/cm²,达到38.5 m A/cm²,填充因子为82.7%,光电转换效率为23.5%。实验发现,在nc-Si O_x:H薄膜沉积前对本征非晶硅层表面进行处理,沉积1 nm纳米晶硅(nc-Si:H)种子层,可改善nc-Si O_x:H薄膜的晶化率,降低薄膜中的非晶相含量。与单层nc-Si O_x:H窗口层的电池相比,nc-Si:H/nc-Si O_x:H叠层结构提高电池填充因子,达到83.4%,光电转换效率增加了0.3%,达到23.8%。     

电子传输层锂盐掺杂对Cs2AgBiBr6双钙钛矿太阳电池性能的影响研究

电子传输层是影响钙钛矿太阳电池性能的重要因素。常用的介孔二氧化钛(mp-TiO₂)电子传输层存在较多表面缺陷，电荷提取效率较低，复合几率高。利用双(三氟甲烷磺酰)亚胺锂(LiTFSI)对mp-TiO₂进行锂盐掺杂，并将其应用于Cs₂AgBiBr₆双钙钛矿太阳电池(下文简称为“Cs₂AgBiBr₆太阳电池”)中，以研究锂盐掺杂对Cs₂AgBiBr₆薄膜和Cs₂AgBiBr₆太阳电池性能的影响。研究结果表明：1)锂盐掺杂改善了Cs₂AgBiBr₆薄膜的结晶度，降低了其缺陷态密度，促进了电子传输层/钙钛矿界面处的电荷转移；2)掺杂的锂盐最优质量浓度为10 mg/mL，在该掺杂浓度下制备的Cs₂AgBiBr₆太阳电池的短路电流密度从1.92 mA/cm²提升到2.43m...     

空气中制备NiOx基钙钛矿太阳能电池和光电探测器

钙钛矿材料可通过溶液法制备,但也易受溶剂氛围影响,导致膜的质量和可重复性降低。开发空气中高质量钙钛矿膜的制备工艺,可以大幅降低成本和提升钙钛矿材料的应用价值。深入研究空气中水汽对中间相和成膜过程的影响,有助于指导空气中的制备工艺参数。有水存在时,PbI₂-DMSO中间相上的DMSO更容易脱去,导致由配位更多DMSO的中间相向配位更少DMSO的中间相转变;同时,有水存在时更容易生成大尺寸的MA₂Pb₃I₈?2DMSO中间相,不利于形成致密的钙钛矿膜。本文主要简述在空气中分别采用“预成核”法和“气-液-固”法制备高质量钙钛矿薄膜,用于钙钛矿太阳能电池和窄带光电探测器。     

乙酸钾修饰界面用于高效稳定的钙钛矿太阳电池

使用乙酸钾(KAc)修饰电子传输层,正置结构的SnO₂/perovskite界面使用其具有的羧基和碱金属阳离子调节能级。研究发现,KAc薄膜的引入会对钙钛矿薄膜产生一定的表面陷阱钝化作用,表现出非辐射复合的减少以及体内和界面电荷复合的抑制。此外,调节钙钛矿晶体的生长,产生晶粒尺寸从450 nm增至600 nm且无针孔的钙钛矿薄膜,缺陷密度显著降低。结果表明,通过使用KAc来修饰电子传输层,可明显减少SnO₂电子传输层的缺陷及能级差;优化后的太阳电池效率提高7.63%,量子效率(IPCE)从87.3%增大到90.1%。     

高效柔性钙钛矿太阳电池研究

对柔性钙钛矿太阳电池(FPSCs)成膜工艺进行研究,针对在柔性基底上沉积薄膜不均匀、较多缺陷、内部应力等问题,分析其形成原因和影响因素。选择PET/ITO作为柔性基底,SnO₂作为电子传输层,加入KCl进行调控,KCl的加入可增加电子传输层与柔性导电基底的亲和性,从而获得致密且缺陷较少的膜层。通过优选钙钛矿前驱体各组分配比,加入MACl作为添加剂调控结晶过程,并在钙钛矿表面设计PEAI钝化层钝化界面,获得高质量的钙钛矿结晶和致密表面,并使电池的柔韧性能得到提升。在适宜的环境下,制备认证效率达到23.14%的柔性钙钛矿太阳电池,其在弯折10000次后仍能保持80.48%的初始光电转换效率。     

电纺AZO NWs电子传输层提高钙钛矿太阳电池性能的研究

研究通过静电纺丝技术制备不同掺铝比例的氧化锌纳米线(AZO NWs),并将其作为电子传输层来提高钙钛矿太阳电池效率.首先使用静电纺丝和煅烧工艺制备出表面光滑连续、形貌均匀、长径比达～105的AZO NWs,然后将AZO NWs作为电子传输层应用于钙钛矿太阳电池.与单层SnO2电子传输层的电池相比,加入AZO NWs后可...     

Optical and electrochemical characteristics of niobium oxide films prepared by sol-gel process and magnetron sputtering A comparison

Electrochromic niobia (Nb₂0₅) coatings were prepared by the sot-gel spin-coating and d.c. magnetron sputtering techniques. Parameters were investigated for the process fabrication of sol-gel spin coated Nb₂0₅ films exhibiting high coloration efficiency comparable with that d.c. magnetron sputtered niobia films. X-ray diffraction studies (XRD) showed that the sot-gel deposited and magnetron sputtered films heat treated at temperatures below 450°C, were amorphous, whereas those heat treated at higher temperatures were slightly crystalline. X-ray photoelectron spectroscopy (XPS) studies showed that the stoichiometry of the films was Nb₂0₅. The refractive index and electrochromic coloration were found to depend on the preparation technique. Both films showed low absorption and high transparency in the visible range. We found that the n, k values of the sot-gel deposited films to be lower than for the sputtered films. The n and k values were n = 1.82 and k = 3 × 10⁻³, and n = 2.28 and K = 4 × 10⁻³ at 530 urn for sot-gel deposited and sputtered films, respectively. The electrochemical behavior and structural changes were investigated in 1 M LiC10₄/propylene carbonate solution. Using the electrochemical measurements and X-ray photoelectron spectroscopy, the probable electrode reaction with the lithiation and delithiation is Nb₂O₅ + x Li⁺ + x e⁻ ↔ Li_xNb₂0₅. Cyclic voltametric (CV) measurements showed that both Nb₂0₅ films exhibits electrochemical reversibility beyond 1200 cycles without change in performance. “In situ” optical measurement revealed that those films exhibit an electrochromic effect in the spectral range 300 < λ < 2100 nm but remain unchanged in the infrared spectral range. The change in visible transmittance was 40% for 250 nm thick electrodes. Spectroelectrochemical measurements showed that spin coated films were essentially electrochemically equivalent to those prepared by d.c. magnetron sputter deposition.     

Defect reduction in electrochemically deposited CdS thin films by annealing in 02

Using the electrochemical deposition method, CdS thin films were deposited from acid solutions (pH = 2.5) containing CdS0₄ and Na₂S₂0₃ on indium-oxide coated glass substrates. These films were annealed in N₂, air, or O₂ atmosphere at 200–500°C for 30 min. Photoluminescence spectra were measured at 77 K. For the films annealed in N₂, the band edge emission became weaker and the luminescence due to defects shifted to longer wavelengths as the annealing temperature was raised above 300°C. However, for the films annealed in air or O₂, the band edge emission was observed strongly irrespective of the annealing temperature and the luminescence due to defects was weak. Thus the O₂ annealing is useful for the defects reduction.     

Preparation and properties of transparent conducting zinc oxide and aluminium-doped zinc oxide films prepared by evaporating method

Undoped and aluminium-doped zinc oxide films have been prepared by thermal evaporation of zinc acetate [Zn(CH₃COO)₂ 2H₂O] and aluminium chloride [AlCl₃] onto a heated glass substrate. The structural and optoelectrical properties of the films have been studied. The effects of heat treatment for the as-deposited films in air and vaccum are investigated. Highly transparent films with conductivity as low as 2×10⁻³ Ω cm can be produced by controlling the deposition parameters. The electron carrier densities are in the range 0.2–7×10¹⁹ cm⁻³ with mobilities of 22–58 cm² V⁻¹ s⁻¹.     

Characterization of Cu(InxGa1−x)2Se3.5 thin films prepared by rf sputtering

Cu(In_xGa_1−x)₂Se_3.5 thin films were fabricated by rf sputtering from CuIn_xGa_1−xSe₂ and Na mixture target by controlling the mixture ratio. X-ray diffraction analyses show that the structure of Cu(In_xGa_1−x)₂Se_3.5, thin films is different from chalcopyrite structure: especially, CuIn₂Se_3.5 thin films have a defect chalcopyrite structure. The lattice parameters for Cu(In_xGa_1−x)₂Se_3.5 thin film are slightly smaller than those for CuIn_xGa_1−xSe₂ thin film and linearly decreased with increasing Ga content. The optical absorption coefficients for Cu(In_xGa_1−x)₂Se_3.5, thin films exceed 2 × 10⁴ cm⁻¹ in energy region above the fundamental band edge. The band gap for Cu(In_xGa_1−x)₂Se_3.5 thin films is larger than that for CuIn.Ga_1−x2Se₂ with the same Ga content and increased with increasing Ga content.     

Generation of enhanced stability of SnO/In(OH)3/InP for photocatalytic water splitting by SnO protection layer1

InP shows a very high efficiency for solar light to electricity conversion in solar cell and may present an expectation property in photocatalytic hydrogen evolution. However, it suffers serious corrosion in water dispersion. In this paper, it is demonstrated that the stability and activity of the InP-based catalyst are effectively enhanced by applying an anti-corrosion SnO layer and In(OH)₃ transition layer, which reduces the crystal mismatch between SnO and InP and increases charge transfer. The obtained Pt/SnO/In(OH)₃/InP exhibits a hydrogen production rate of 144.42 µmol/g in 3 h under visible light illumination in multi-cycle tests without remarkable decay, 123 times higher than that of naked In(OH)₃/InP without any electron donor under visible irradiation.     

Preparation and properties of sprayed CuGa0.5In0.5Se2 thin films

CuGa_0.5In_0.5Se₂ thin films were prepared by spray pyrolysis technique at substrate temperatures (T_s) in the range 100–400°C. The films prepared at T_s = 300–350°C were nearly stoichiometric, polycrystalline with a strong preferred (112) orientation. The resistivity of the films varied in the range, 50–1000 Ω cm and the evaluated optical band gap was 1.35 eV.