An advanced VHDL‐AMS PiN diode model: towards simulation‐based design of power converters

This paper focuses on the modeling of a power PiN diode. The focal point basis is the dependence on temperature. The PiN diode remains a difficult device to model mainly during switching transients. An advanced PiN diode temperature‐dependent model is developed and implemented in VHDL‐AMS. Heterogeneous simulation scheme including the circuit wiring parasitic components, the probe effects and the dependent diode models is successfully simulated using SIMPLORER simulator. Experimental data of several commercial PiN diodes are compared to simulation results at different temperature levels. A good rate of consistency is found. Copyright © 2014 John Wiley & Sons, Ltd.     

Physics-Based PiN Diode SPICE Model for Power-Circuit Simulation

A physics-based model for PiN power diodes is developed and implemented as a SPICE subcircuit. The model is based on a distributed equivalent circuit representation of the PiN base region, which is obtained by solving the ambipolar diffusion equation with the finite difference method. The model is validated against experimental characterization that is carried out on the commercial fast recovery power diodes. Comparisons between the results of the SPICE model with experimental and simulation results taken from the literature and from SILVACO mixed-mode simulations are also presented. Finally, the simulation of a realistic power circuit demonstrates the practical suitability of the proposed model for circuit design in terms of computational efficiency, convergence, and robustness.     

SiC和Si混合PiN/Schottky二极管的模拟和设计

介绍一种具有肖特基正向持性和PN结反向特性的新型整流器－混合PiN/Schottky二级管（MPS0，它速度快，击穿电压高，漏电流小，正向压降低，适合功率系统使用。理论分析了该器件的正向导通，反向阻断和击穿特性。主要考虑4H SiC，模拟和优化设计了器件的外延层掺杂浓度和厚,肖特基接触和PN结网格宽度，PN结深度和掺杂浓度等主要的结构参数。     

A novel approach to extract accurate design parameters of PiN diode

Accurate modelling of PiN diode transient behaviour is necessary to extract design parameters which are not documented in datasheets. To meet this requirement, this paper introduces a novel approach giving the possibility to identify accurate parameters of a given device. The used technique is based only on two stages. First, the design parameters are initialized and optimized. Second, they are refined by minimizing the cost function which depends on the transient switching parameters (I_RM, V_RM and t_rr). With a simple and CPU time-saving approach this technique leads to extract design parameters without necessarily knowing the exact technological architecture of the PiN diode. Moreover, in order to validate the proposed approach and the parameter extraction procedure three commercial diodes are tested. A good agreement between experimental and simulation data is obtained. Copyright © 2007 John Wiley & Sons, Ltd.     

快速功率二极管正反向恢复特性仿真研究

在国内外电力电子领域对功率二极管模型研究成果的基础上,利用计算机仿真技术,从数学物理模型和电路模型两方面,对快速功率二极管的反向恢复特性进行了较深入的研究,获得了可正确描述正反向恢复过程的功率二极管仿真模型.该模型克服了标准二极管模型完全忽视正向恢复效应,对二极管反向恢复现象的模拟也会产生错误振荡的缺陷,因此具有较好的现实意义.     

Improved active‐diode circuit used in voltage doubler

An improved active‐diode circuit, which makes use of positive feedback to achieve fast on/off transition, is presented in this paper. The proposed active‐diode circuit can be embedded into a voltage doubler to replace the commonly used dead‐time circuit and to eliminate reverse current. In addition, the relationship between oscillation frequency, boosting and output capacitances, load‐ and on‐resistances of the power switch and the output voltage is analysed, to investigate a methodology to retain high voltage gain of a voltage doubler. The proposed active‐diode circuit is applied to a voltage doubler implemented in a commercial 0.35‐µm process with threshold voltage of about 0.68 V. The input voltage, maximum output current and oscillation frequency of the voltage doubler are 1 V, 1 mA and 0.4 MHz, respectively. Moreover, the used boosting and output capacitances are 22 nF. The highest power efficiency achieved is 83% at a load current of 0.47 mA. Copyright © 2010 John Wiley & Sons, Ltd.     

PiN二极管反向恢复机理研究

对PiN二极管反向恢复过程进行了分步分析，推导出了反向恢复过程中四个阶段的时间计算公式，并在一定简化近似的基础上得出了反向恢复时间的计算公式，利用该公式分析了影响反向恢复特性的主要因素及实现快速软恢复的条件。     

高压大容量变换器中快恢复二极管的模型

以高压大容量变换器中的快恢复二极管为研究对象,结合集总电荷模型和功能模型,提出一种新的二极管混合模型.模型采用四个阶段准确描述反向恢复过程,正向恢复过程考虑"电感效应".模型在电路仿真软件PSIM中实现,仿真结果与产品手册数据、实验结果对比表明,所提模型能准确地反映二极管正向和反向恢复特性.     

新型半导体激光电源的设计

利用抗电网浪涌电路、慢启动慢关闭电路和电流负反馈电路设计了一款应用于半导体激光器的新型工作电源。测试结果证明该电路能够对浪涌起到良好的防范作用,实现了对半导体激光器的防浪涌保护,改进了半导体激光器电源的可靠性,提高了半导体激光器的输出稳定性,延长了激光器的使用寿命。     

SiC SBDs selection method based on loss analysis of boost converter

Silicon carbide schottky barrier diodes (SiC SBDs) have much better characteristic than Si PiN diode in high voltage applications because SiC SBDs do not have recovery effect. However, simple replacing is not the most effective way. In a boost converter, the power loss caused by the SiC SBD can be divided into the conduction loss of the SiC SBD and the loss caused by the energy stored in the junction capacitance of the SiC SBD. Therefore analysis of not only the conduction loss but also the loss caused by the energy stored in the junction capacitance of the SiC SBD can realize the SiC SBD selection to improve the efficiency of the boost converter. © 2016 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

半导体激光器温度控制电路设计及实验研究

DFB可调谐二极管激光器是激光光谱测量系统中的最主要部件之一,它的输出波长与辐射功率的稳定性决定测量系统的稳定性.影响DFB可调谐二极管激光器输出波长和输出功率的因素主要为激光器的注入电流和工作温度,而工作温度对输出特性的影响更大.设计了激光器温度控制电路,并实验分析了PI参数对温度控制稳定性的影响以及温度控制的短期稳定性;将设计电路应用在DFB可调谐二极管激光器上进行激光器输出波长与输出功率的长期监测,得到激光器输出波长的标准偏差为0.2×10-6,输出功率的标准偏差为0.02 mW.     

一种高效大功率LED驱动电源设计

设计了一款基于Flyback拓扑的单级功率因数校正的恒流LED驱动电源。初级采用具有RCD吸收电路的反激变换器,提高驱动器的效率和功率因数,并给出了变压器参数设计的方法。次级采用TSM 101恒流控制电路,有效延长LED的使用寿命。利用控制电路实现驱动电源在开路、短路、过温度等各种异常状态保护。测试及使用表明,该驱动电源性能可靠稳定,效率高。     

Efficiency model of boost dc–dc PWM converters

A thorough efficiency analysis of a boost PWM converter taking into account the conduction losses, the diode power loss, the switching losses, the gate‐drive loss and the capacitive switching loss, for both continuous conduction mode and discontinuous conduction mode is presented. The analysis is extended in the synchronous rectification case where a self driven transistor instead of the diode rectifier is adopted. The expressions of the converter efficiency can be used to predict the circuit behaviour for both a constant input and constant output voltage operation. The model has been validated using SPECTRE simulator and a 0.35 µm CMOS process, and error always lower than 2% were found. Copyright © 2005 John Wiley & Sons, Ltd.     

A voltage-source PWM rectifier-inverter with feedforward control of instantaneous power

In general, diode rectifiers with electrolytic capacitors on the dc side have been used as dc power supplies for voltage-source inverters. Rectifiers of this type, however, cause many problems such as poor power factor and harmonics. Recently, voltage-source PWM rectifier-inverters have been studied to provide the following advantages: (1) harmonic-free on both ac sides; (2) unity power factor on the input ac side; (3) power flow of either direction or power regeneration; (4) reduction of the dc capacitor. However, it is difficult for a conventional voltage-source PWM rectifier-inverter to regulate the capacitor voltage on transient states because it has only a voltage feedback loop. This paper describes a voltage-source PWM rectifier-inverter with feedforward control of instantaneous power. Based on the pq theory, the instantaneous power which is calculated in the control circuit of the inverter is fed forward to the control circuit of the rectifier. The feedforward control of instantaneous power contributes greatly to sufficiently suppress voltage fluctuation of the dc capacitor on transient states. Transient characteristics are discussed, and some interesting experimental results of a laboratory model are shown.     

交流量串入直流控制回路造成保护误动的分析和对策

介绍了某发电厂由于间隔二次回路故障引起的主变保护误动事故。通过对主变出口继电器及其回路、二次回路的检查,找出了事故的原因：由于交流量窜入直流控制回路引起中间出口继电器动作从而造成主变保护动作。通过试验对事故进行了分析,并提出了2种防范措施：方案1为将出口中间继电器两端的续流二级管改为RC回路,从而避免由于交流量引起的中间出口继电器的抖动;方案2为对直流系统进行改造。验证结果表明方案1不会影响保护的动作特性。现场采用方案1解决交流量窜入直流回路引起的保护误动问题,取得了良好的效果。     

基于Sepic无桥有源功率因数校正变换器研究

采用无桥技术取代了传统功率因数开关校正(PFC)电路前端的整流桥,构建了一种新型的无桥Sepic-PFC电路.在开关开通过程中,输入电流仅流过一个二极管,有效地减小了导通过程中能量的消耗.电路工作在电流断续模态,减小了输入电路的电磁干扰,同时使得开关管软启动和二极管零电流关断,减小了开关管的导通损耗和二极管的反向恢复损...     

A voltage source PWM rectifier-inverter with feedforward control of instantaneous power

In general, diode rectifiers with electrolytic capacitors on the dc side have been used as dc power supplies for voltage source inverters. This type of rectifiers, however, causes many problems such as poor power factor and harmonics. Recently, voltage source PWM rectifier-inverters have been studied to provide the following advantages; (1) harmonic-free on both ac sides; (2) unity power factor on the input ac side; (3) power flow of either direction or power regeneration; (4) reduction of the dc capacitor. It is, however, difficult for a conventional one to regulate the capacitor voltage on transient states because of having only a voltage feed-back loop. This paper describes a voltage source PWM rectifier-inverter with feed-forward control of instantaneous power. Based on the pq theory, the instantaneous power which is calculated in the control circuit of the inverter is fed forward to the control circuit of the rectifier. The feed-forward control of instantaneous power makes a great contribution to sufficiently suppress voltage fluctuation of the dc capacitor on transient states. Transient characteristics are discussed and some interesting experimental results of a laboratory model are shown.     

Finite element power diode model optimized through experiment‐based parameter extraction

This paper presents a finite element physics‐based power diode model with parameters established through an extraction procedure validated experimentally. The model core is a numerical module that solves the ambipolar diffusion equation through a variational formulation followed by an approximate solution with the finite element method. Other zones of the device are modeled with classical methods in an analytical module. This hybrid approach enables accurate modeling and simulation of power bipolar semiconductor devices, using standard SPICE circuit simulators, with low execution times. As physics‐based models need a significant number of parameters, an automatic parameter extraction method has been developed. The procedure, based on an optimization algorithm (simulated annealing), enables an efficient extraction of parameters using some simple device waveform measurements. Implementation details of power diode model, in IsSpice simulator, are presented. Experimental validation is performed. Results prove the usefulness of the proposed methodology for efficient design of power circuits through simulation. Copyright © 2008 John Wiley & Sons, Ltd.     

一种电机驱动用大功率网侧变流系统研究

提出了一种电机驱动用高性价比大功率网侧变流系统。主电路采用二极管整流器与PWM整流器并联,充分利用二极管整流器简单可靠、成本低,以及PWM整流器能量双向流动、功率因数高的优点,不仅能够省去传统电机驱动中的制动电阻,节约电能,还能提高交流系统功率因数。控制上通过对二极管整流器输出特性的研究,并调节PWM整流器输出特性,实现了PWM整流器与二极管整流器的协调工作。仿真和试验验证了主电路方案及控制方法的有效性。     

考虑变温度影响的SiC MOSFET建模与分析

为了准确反映SiC MOSFET在不同温度下的电气特性,对影响SiC MOSFET电气特性的关键参数进行了分析,提出了一种SiC MOSFET等效电路模型。首先,根据SiC MOSFET阈值电压和跨导随温度变化的规律,采用函数拟合的温控电源模型对SiC MOSFET的阈值电压和漏极电流进行补偿;其次,考虑寄生电容与极间电压的关系,采用电容子电路和可变电容模型对SiC MOSFET的寄生电容进行等效模拟,根据SiC MOSFET体二极管对其静、动态特性的影响,利用独立二极管模型描述体二极管特性,进而建立SiC MOSFET的等效电路模型。最后,在不同温度条件下,对该模型进行了仿真并与实验测试结果进行了对比。结果表明所建模型较为准确地描述SiC MOSFET在较宽温度范围内的静、动态特性,验证了模型的有效性。