Reflectivity of absorbers in 100-200 GHz range

Different types (pyramidal, convoluted, wedge, flat) of absorber panel made by several manufacturers have been measured at 107 and 183 GHz. These measurements revealed a rapid degradation of the quality of absorbers from 107 to 183 GHz: reflectivity increased nearly 10 dB. The best absorbers have reflectivities below -40 dB at 107 GHz and about -35 dB at 183 GHz.<>     

Monostatic Reflectivity and Transmittance of Radar Absorbing Materials at 650 GHz

Transmittance and monostatic reflectivity of different radar absorbing materials at 650 GHz are presented. The reflectivity was measured in plane-wave conditions in a radar cross-section (RCS) range with vertical polarization. The lowest reflectivity level (-70 dB) was achieved with commercial absorbers TK THz RAM and Firam-500 with oblique incidence angles. Floor carpets were also studied, and the reflectivity level of those was found to be sufficiently low (from -50 to -60 dB) for use in antenna test ranges. Results agree with earlier studies and indicate the applicability of the RCS method in reflectivity measurements also at 650 GHz.     

（英）一种基于新型自组装微带-波导过渡的D波段通信发射机模块

展示了一种基于新型自组装微带-波导过渡的D波段（110-170GHz）发射机模块。过渡结构的仿真平均插入损耗为0.6 dB,回波损耗于带内基本优于10 dB。基于该过渡结构以及阻性混频器和倍频器芯片,设计了一种D波段发射机模块。该发射机模块工作于110-153 GHz,峰值输出功率于150 GHz可达-4.6 dBm,3-dB带宽为145.8-159.3 GHz。使用该模块进行了64-QAM高阶无线通信测试,测试传输速率为3 Gb/s,验证了模块封装方案的实用性。     

110-120-GHz monolithic low-noise amplifiers

The authors discuss the development of 110-120-GHz monolithic low-noise amplifiers (LNAs) using 0.1-mm pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT technology. Two 2-stage LNAs have been designed, fabricated, and tested. The first amplifier demonstrates a gain of 12 dB at 112 to 115 GHz with a noise figure of 6.3 dB when biased for high gain, and a noise figure of 5.5 dB is achieved with an associated gain of 10 dB at 113 GHz when biased for low-noise figure. The other amplifier has a measured small-signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figure of 3.4 dB with 15.6-dB associated gain was obtained at 113 GHz. The authors state that the small-signal gain and noise figure performance for the second LNA are the best results ever achieved for a two-stage HEMT amplifier at this frequency band     

High-isolation W-band MEMS switches

This paper presents the design, fabrication and measurement of single, T-match and π-match W-band high-isolation MEMS shunt switches on silicon substrates. The single and T-match design result in -20 dB isolation over the 80-110 GHz range with an insertion loss of 0.25±0.1 dB. The π-match design results in a reflection coefficient lower than -20 dB up to 100 GHz, and an isolation of -30 to -40 dB from 75 to 110 GHz (limited by leakage through the substrate). The associated insertion loss Is 0.4±0.1 dB at 90 GHz. To our knowledge, this is the first demonstration of high-performance MEMS switches at W-band frequencies     

石墨表面化学镀Ni-P非晶的制备与电磁性能

为了提高石墨吸收剂的阻抗匹配能力,改善其吸波性能,采用化学镀法对石墨表面进行镀Ni-P改性。研究了镀层的相组成、形貌、成分和样品的电磁吸波性能。结果表明:石墨表面包覆了一层非晶态Ni-P镀层;与原始石墨相比,在2GHz时,镀Ni-P非晶石墨复合材料的ε′和ε″分别明显降低至6.6和0.4,μ′和μ″分别略微增加至1.08和0.26,其吸收频带得到展宽,在14GHz的最小反射率为–7.0dB,反射率小于–5dB的吸收频带宽达4GHz。     

W-band single-layer vertical transitions

Vertical single-layer transitions operating at W-band frequencies have been developed. The designs are uniplanar, use electromagnetic coupling, and do not require via holes or air bridges. The first transition uses coplanar-waveguide-mode coupling and results in an insertion loss of better than 0.6 dB over the whole band, with a loss of 0.25 dB from 85 to 110 GHz. The return loss is better than -10 dB from 75 to 110 GHz. The second transition uses microstrip-mode coupling and results in a 0.2-dB insertion loss over the whole W-band. These transitions can prove very useful for millimeter-wave packaging and vertical interconnects     

（英）D波段InP基高增益、低噪声放大芯片的设计与实现

利用90-nm InAlAs/InGaAs/InP HEMT工艺设计实现了两款D波段（110~170 GHz）单片微波集成电路放大器。两款放大器均采用共源结构,布线选取微带线。基于器件A设计的三级放大器A在片测试结果表明：最大小信号增益为11.2 dB@140 GHz,3 dB带宽为16 GHz,芯片面积2.6×1.2 mm2。基于器件B设计的两级放大器B在片测试结果表明：最大小信号增益为15.8 dB@139 GHz,3dB带宽12 GHz,在130~150 GHz频带范围内增益大于10 dB,芯片面积1.7×0.8 mm2,带内最小噪声为4.4 dB、相关增益15 dB@141 GHz,平均噪声系数约为5.2 dB。放大器B具有高的单级增益、相对高的增益面积比以及较好的噪声系数。该放大器芯片的设计实现对于构建D波段接收前端具有借鉴意义。     

Coplanar millimeter-wave ICs for W-band applications using 0.15μm pseudomorphic MODFETs

A small signal S-parameter and noise model for the cascode MODFET has been validated up to 120 GHz, allowing predictable monolithic microwave integrated circuit (MMIC) design up to W-band. The potential of coplanar waveguide technology to build compact, high performance system modules is demonstrated by means of passive and active MMIC components. The realized passive structures comprise a Wilkinson combiner/divider and a capacitively loaded ultra miniature branch line coupler. For both building blocks, very good agreement between the measured and modeled data is achieved up to 120 GHz. Based on the accurate design database, two versions of compact integrated amplifiers utilizing cascode devices for application in the 90-120 GHz frequency range were designed and fabricated. The MMICs have 26.3 dB and 20 dB gain at 91 GHz and 110 GHz, respectively. A noise figure of 6.4 dB was measured at 110 GHz. The 90-100 GHz amplifier was integrated with an MMIC tunable oscillator resulting in a W-band source delivering more than 6 dBm output power from 94 to 98 GHz     

Distributed 2- and 3-bit W-band MEMS phase shifters on glass substrates

This paper presents state-of-the-art RF microelectromechanical (MEMS) phase shifters at 75-110 GHz based on the distributed microelectromechanical transmission-line (DMTL) concept. A 3-bit DMTL phase shifter, fabricated on a glass substrate using MEMS switches and coplanar-waveguide lines, results in an average loss of 2.7 dB at 78 GHz (0.9 dB/bit). The measured figure-of-merit performance is 93/spl deg//dB-100/spl deg//dB (equivalent to 0.9 dB/bit) of loss at 75-110 GHz. The associated phase error is /spl plusmn/3/spl deg/ (rms phase error is 1.56/spl deg/) and the reflection loss is below -10 dB over all eight states. A 2-bit phase shifter is also demonstrated with comparable performance to the 3-bit design. It is seen that the phase shifter can be accurately modeled using a combination of full-wave electromagnetic and microwave circuit analysis, thereby making the design quite easy up to 110 GHz. These results represent the best phase-shifter performance to date using any technology at W-band frequencies. Careful analysis indicates that the 75-110-GHz figure-of-merit performance becomes 150/spl deg//dB-200/spl deg//dB, and the 3-bit average insertion loss improves to 1.8-2.1 dB if the phase shifter is fabricated on quartz substrates.     

0.6 μm CMOS分布式放大器设计

采用了国内0.6μm标准CMOS工艺设计实现了一种单片集成的分布式放大器。放大器采用四级级联结构,单元电路采用管联(cascode)结构以提高隔离度。在输入输出端50Ω匹配情况下,测试得到的频带宽度为0.1~4.0 GHz,增益为5.0±1.0 dB,输入输出的回波损耗分别小于-10 dB和-7 dB。在5 V供电下功耗约为110 mW。     

Ultra-thin tunable microwave absorber using liquid crystals

A dynamically adaptive radar absorber is described which is based on a periodic array of microstrip patches that are printed on a 500 mum-thick liquid crystal substrate. The measured reflectivity of the structure is less than -38 dB with a 200 MHz -10 dB bandwidth at 10.19 GHz when a +4 DC bias is applied. It is shown that a 34 dB reduction in signal loss occurs when the bias voltage is increased to 20 V.     

Measurements at millimeter and micrometer wavelengths

Insertion loss measurements of waveguide components have been made with an accuracy 0.2 dB at the 10-dB level and 2.8 dB at the 30-dB level. Attenuation measurements of 60-mm TE10circular waveguide have been made over the frequency range 33 to 110 GHz with total uncertainty of 0.4 dB. Intercomparison between calorimeters developed by national laboratories at 100 GHz resulted in differences less than 0.5 percent. In measuring optical fibers calorimetry was used to measure loss and power with an accuracy of 1 to 2 percent. Loss measurements by comparison with a standard have resulted in accuracies of 0.5 dB in losses of 40 dB/km in the 1.0- to 1.6-µm range. Shuttle pulse measurement of pulse spreading indicates that pulsewidths of 0.4 ns are increased to 4.0 ns by passing through 2 km of fiber at a wavelength of 0.9 µm. Interferometer techniques were developed for determination of the complex permittivity of liquids and solids over a wide temperature range in the frequency range from 10.0 GHz to 18 THz. Complex permittivities have been measured at 94 GHz by transmission through a dielectric slab. Errors reported in relative permittivity and loss tangent are 0.2 and 2.5 percent, respectively.     

Design of multiple-edge blinders for large horn reflector antennas

Attaching blinders to the sides of pyramidal horn reflector antennas and other large aperture antennas is one method of controlling high sidelobes for horizontal polarization. This paper describes analysis and design procedures for arriving at a useful multiple-edge blinder for reducing undesirable sidelobes of a pyramidal horn reflector antenna. Several blinders have been designed and tested for use with a pyramidal horn reflector antenna. They are directed at reducing a high sidelobe near90degin the azimuth plane where levels (referred to the main lobe) of -52 dB at 3.74 GHz and -58 dB at 6.325 GHz are presently typical. A 14-edge blinder designed using these techniques reduced these levels by 20 dB at 3.74 GHz and 12 dB at 6.325 GHz and did not significantly degrade antenna performance for other angles and other polarizations.     

An Integrated Sideband-Separating SIS Mixer Based on Waveguide Split Block for 100 GHz Band with 4.0–8.0 GHz IF

We have developed an integrated sideband-separating SIS mixer for the 100 GHz band based on the waveguide split block. The measured receiver noise temperatures with 4.0–8.0 GHz IF are less than 60 K in the LO frequency range of 90–110 GHz, and a minimum value of around 45 K is achieved at 100 GHz. The image rejection ratios are more than 10 dB in the frequency range of 90–110 GHz. We have installed the sideband-separating SIS mixer into an atmospheric ozone-measuring system at Osaka Prefecture University and successfully observed an ozone spectrum at 110 GHz in SSB mode. This experimental result indicates that the sideband-separating SIS mixer is very useful for astronomical observation as well as atmospheric observation.     

A full W-band low noise amplifier module for millimeter-wave applications

A full W-band Low Noise Amplifier (LNA) Module is designed and fabricated in this letter. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification, two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz , has a small signal gain above 21 dB. The noise figure is lower than 5dB throughout the entire W-band (below 3 dB from 89 to 95GHz) at a room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain, low noise, and low dc power consumption     

Submicron transferred-substrate heterojunction bipolar transistors

We report submicron transferred-substrate AlInAs/GaInAs heterojunction bipolar transistors (HBT's). Devices with 0.4-μm emitter and 0.4-μm collector widths have 17.5 dB unilateral gain at 110 GHz. Extrapolating at -20 dB/decade, the power gain cutoff frequency f_max is 820 GHz. The high f_max, results from the scaling of HBT's junction widths, from elimination of collector series resistance through the use of a Schottky collector contact, and from partial screening of the collector-base capacitance by the collector space charge     

35-GHz transferred electron amplifiers

GaAs transferred electron amplifiers with 110-mW saturated power output at 35 GHz have been designed and fabricated. Small signal gain of 13 dB, 3-GHz bandwidth, and noise figures as low as 16.2 dB have been observed. Two basic amplifier designs which have been investigated are described.     

Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphicHEMT's

We report the first demonstration of W-band metamorphic HEMTs/LNA MMICs using an AlGaAsSb lattice strain relief buffer layer on a GaAs substrate. 0.1×50 μm low-noise devices have shown typical extrinsic transconductance of 850 mS/mm with high maximum drain current of 700 mA/mm and gate-drain breakdown voltage of 4.5 V. Small-signal S-parameter measurements performed on the 0.1-μm devices exhibited an excellent f_T of 225 GHz and maximum stable gain (MSG) of 12.9 dB at 60 GHz and 10.4 dB at 110 GHz. The three-stage W-band LNA MMIC exhibits 4.2 dB noise figure with 18 dB gain at 82 GHz and 4.8 dB noise figure with 14 dB gain at 89 GHz, The gain and noise performance of the metamorphic HEMT technology is very close to that of the InP-based HEMT     

110 GHz vector modulator for adaptive software-controlledtransmitters

A 110 GHz MMIC vector modulator for use in low-cost, high-performance, radar and communication transmitters is presented. The circuit consists of two push-pull (bi-phase) attenuators arranged in phase quadrature and has dimensions of 1.7× 1.4 mm². The fabricated MMIC has been characterized by means of static S-parameter measurements and shows a minimum insertion loss of 12 dB at 110 GHz, Using these measurements, the required baseband input levels for a 64-QAM static constellation were determined. These levels were then applied at 10 MSample/s, by an arbitrary waveform generator, to demonstrate a 60 Mb/s data rate transmitter operating at 110 GHz. To date, this represents the highest reported RF frequency for direct multilevel carrier modulation using monolithic technology