Effect of Bismuth of Oxide Content on the Sintering of Zinc Oxide

Densification and microstructure de velopment in Bi₂O₃-doped ZnO have been studied with a special emphasis on the effect of the Bi₂O₃ content. A small amount of Bi₂O₃ in ZnO (0.1 mol%) retarded densification, but the addition of Bi₂O₃ to more than 0.5 mol% promoted densification by the formation of a liquid phase above the eutectic temperature (∼740°C). The liquid phase increased grain-boundary mobility, which was responsible for the formation of intragrain pores and the decrease in the sintered density. The increase in the Bi₂O₃ content increased the probability of the formation of skeleton structure, which reduced the grain growth rate and the sintered density.     

Microstructure of Varistors Prepared with Zinc Oxide Nanoparticles Coated with Bi2O3

Zinc oxide (ZnO) nanoparticles coated with 1–5 wt% Bi₂O₃ were prepared by precipitating a Bi(NO₃)₃ solution onto a ZnO precursor. Transmission electron microscopy showed that a homogeneous Bi₂O₃ layer coated the surface of the ZnO nanoparticles and that the ZnO particle size was ∼30–50 nm. Scanning electron microscopy showed that ZnO grains sintered at 1150°C were homogeneous in size and surrounded by a uniform Bi₂O₃ layer. When the ZnO grains were surrounded fully by Bi₂O₃ liquid phases, further increases in the ZnO grain size were not affected by the Bi₂O₃ content. This predesigned ZnO nanoparticle structure was shown to promote homogeneous ZnO grains with perfect crystal growth.     

Grain Growth in Sintered ZnO and ZnO-Bi2O3 Ceramics

Grain growth in a high-purity ZnO and for the same ZnO with Bi₂O₃ additions from 0.5 to 4 wt% was studied for sintering from 900° to 1400°C in air. The results are discussed and compared with previous studies in terms of the phenomenological kinetic grain growth expression: G ⁿ— G ⁿ₀= K ₀ t exp(— Q/RT ). For the pure ZnO, the grain growth exponent or n value was observed to be 3 while the apparent activation energy was 224 ± 16 kJ/mol. These parameters substantiate the Gupta and Coble conclusion of a Zn²⁺ lattice diffusion mechanism. Additions of Bi₂O₃ to promote liquidphase sintering increased the ZnO grain size and the grain growth exponent to about 5, but reduced the apparent activation energy to about 150 kJ/mol, independent of Bi₂O₃ content. The preexponential term K ₀ was also independent of Bi₂O₃ content. It is concluded that the grain growth of ZnO in liquid-phase-sintered ZnO-Bi₂O₃ ceramics is controlled by the phase boundary reaction of the solid ZnO grains and the Bi₂O₃-rich liquid phase.     

Effect of Bi2O3 Addition on the Sintering Temperature and Microwave Dielectric Properties of Zn2SiO4 Ceramics

Bi₂O₃ was added to a nominal composition of Zn_1.8SiO_3.8 (ZS) ceramics to decrease their sintering temperature. When the Bi₂O₃ content was <8.0 mol%, a porous microstructure with Bi₄(SiO₄)₃ and SiO₂ second phases was developed in the specimen sintered at 885°C. However, when the Bi₂O₃ content exceeded 8.0 mol%, a liquid phase, which formed during sintering at temperatures below 900°C, assisted the densification of the ZS ceramics. Good microwave dielectric properties of Q × f =12,600 GHz, ɛ_r=7.6, and τ_f=−22 ppm/°C were obtained from the specimen with 8.0 mol% Bi₂O₃ sintered at 885°C for 2 h.     

Grain Growth of Zinc Oxide During the Sintering of Zinc Oxide—Antimony Oxide Ceramics

Grain growth in a high-purity ZnO with systematic additions of Sb₂O₃ from 0.29 to 2.38 wt% was studied for sintering in air from 1106° to 1400°C. The results are discussed and compared with previous studies of pure ZnO and ZnO with Bi₂O₃ additions in terms of the kinetic grain growth expression: Gⁿ – Gⁿ ₀= K ₀ t exp(— Q/RT ). Additions of Sb₂O₃ inhibited the grain growth of ZnO and increased the grain growth exponent ( n -value) to 6 from 3 for pure ZnO and 5 for the ZnO—Bi₂O₃ ceramic. The apparent activation energy for the grain growth of ZnO also increased to about 600 kJ/mol from 220 kJ/mol for pure ZnO and 150 kJ/mol for the ZnO—Bi₂O₃ ceramics. Both the grain growth exponent and the activation energy were independent of the Sb₂O₃ content. Particles of the Zn₇Sb₂O₁₂ spinel were observed on the grain boundaries and at the grain triple point junctions. It was also observed that the Sb₂O₃ additions caused twin formation in each ZnO grain. It is concluded that both the Zn₇Sb₂O₁₂ particles and the twins are responsible for the ZnO grain growth inhibition by Sb₂O₃.     

Pore–Boundary Separation Behavior during Sintering of Pure and Bi2O3-Doped ZnO Ceramics

Pore–boundary separation in ZnO and 99.95ZnO·0.05Bi₂O₃ (in mol%) specimens during sintering at 1200°C was investigated. In pure ZnO specimens, pores were attached to the grain boundaries and disappeared during the final stage of sintering. In the Bi₂O₃-doped specimens, on the other hand, many pores were separated from the boundaries and trapped inside the grains. Observation using transmission electron microscopy showed that a thin layer of Bi₂O₃-rich phase existed at the boundaries in the Bi₂O₃-doped specimens. The pore separation in 99.95ZnO·0.05Bi₂O₃ specimens was explained in terms of the dihedral angle change and the high mobility of a liquid film boundary.     

Grain Growth of ZnO during Bi2O3 Liquid-Phase Sintering

Grain growth of ZnO during the liquid-phase sintering of binary ZnO–Bi₂O₃ ceramics has been studied for Bi₂O₃ contents from 3 to 12 wt% and sintering from 900° to 1400°C. The results are considered in combination with previously published studies of ZnO grain growth in the ZnO–Bi₂O₃ system. For the Bi₂O₃ contents of the present study, the rate of ZnO grain growth is found to decrease with increasing Bi₂O₃. Activation analysis, when combined with the results of similar analyses of the previous studies, reveals a change in the rate-controlling mechanism for ZnO grain growth. Following a low-Bi₂O₃-content region of nearly constant activation energy values of about 150 kJ/mol, further Bi₂O₃ additions cause an increase of the activation energy to about 270 kJ/mol. consistent with accepted models of liquid-phase sintering, it is concluded that the rate-controlling mechanism of ZnO grain growth during liquid-phase sintering in the presence of Bi₂O₃ changes from one of a phase-boundary reaction at low Bi₂O₃ levels to one of diffusion through the liquid phase at about the 5 to 6 wt% Bi₂O₃ level and above.     

Effect of Heat Treatments on the Wetting Behavior of Bismuth-Rich Intergranular Phases in ZnO:Bi:Co Varistors

The effect of annealing on the wetting behavior of Bi-rich intergranular phases in ZnO:Bi:Co varistors was studied. The intergranular phase exhibits temperature-dependent grain-boundary wetting, with an average equilibrium dihedral angle of 0° at 1140°C and over 55° at 610°C. The temperature-dependent wetting may be related to the temperature dependence of the ZnO concentration in the Bi₂O₃ liquid phase. The effect of the intergranular phase distribation on the electrical properties of ZnO varistors is discussed.     

Seeding of the Reaction-Bonded Aluminum Oxide Process

The effect of the initial α-Al₂O₃ particle size in the reaction-bonded aluminum oxide (RBAO) process on the phase transformation of aluminum-derived γ-Al₂O₃ to α-Al₂O₃, and subsequently densification, was investigated. It has been demonstrated that if the initial α-Al₂O₃ particles are fine (∼0.2 μm, i.e., 2.9 × 10¹⁴γ-Al₂O₃ particles/cm³), then they seed the phase transformation. The fine α-Al₂O₃ decreases the transformation temperature to ∼962°C and results in a finer microstructure. The smaller particle size of the seeded RBAO decreases the sintering temperature to as low as ∼1135°C. The results confirm that seeding can be utilized to improve phase transformations and densification and subsequently to tailor final microstructures in RBAO-derived ceramics.     

Spark Plasma Sintering of Bismuth Titanate Ceramics

Spark plasma sintering (SPS) was used to fabricate bismuth titanate (Bi₄Ti₃O₁₂) ceramics. The densification, microstructure development and dielectric properties were investigated. It was found that the densification process was greatly enhanced during SPS. The sintering temperature was 200°C lower and the microstructure was much finer than that of the pressureless sintered ceramics, and dense compacts with a high density of over 99% were obtained at a wide temperature range of 800°–1100°C. Dielectric property measurement indicated that the volatilization of Bi³⁺ was greatly restrained during SPS, resulting in an unprecedented low dielectric loss for pure Bi₄Ti₃O₁₂ ceramics.     

The Bi2O3–Nb2O5–NiO Phase Diagram

The Bi₂O₃–Nb₂O₅–NiO phase diagram at 1100°C was determined by means of solid-state synthesis, X-ray diffraction, and scanning electron microscopy. A ternary eutectic with a melting point below 1100°C was found to exist in the field between NiO, Bi₂O₃, and the end-member of the δBi₂O₃–Nb₂O₅ solid solution. The existence of the previously reported Bi₃Ni₂NbO₉ phase was disproved. A pyrochlore homogeneity range around Bi_1.5Ni_0.67Nb_1.33O_6.25 was determined together with all the phase relations in this phase diagram.     

Retrograde Densification in Bi2Sr2CaCu2O8 Superconductors

Bi₂Sr₂CaCu₂O₈ was prepared using the mixed oxide-carbonate method and sintered at temperatures ranging from 850° to 911°C. The samples were characterized for density, mechanical strength, phase composition, microstructure, and superconducting transition temperatures. A unique retrograde densification characteristic is demonstrated in the temperature range 850° to 890°C whereby the material first becomes less dense as the sintering temperature is raised, and only in a narrow temperature range from 900° to 905°C does the material densify then with the formation of a liquid phase. The retrograde densification mechanism is shown to be that of the formation of thin platelike crystallites which grow in a randomly oriented fashion, thus pushing the structure apart. This retrograde densification, coupled with a narrow sintering range overlapping the melting temperature, makes this compound a difficult one to process.     

Pyrochlore Phase Formation in the System Bi2O3–ZnO–Ta2O5

The subsolidus phase diagram of the system Bi₂O₃–ZnO–Ta₂O₅ in the region of the cubic pyrochlore phase has been determined at 1050°C. This phase forms a solid solution area that includes the ideal composition P, Bi₃Zn₂Ta₃O₁₄; possible solid solution mechanisms are proposed, supported by density measurements of Zn-deficient solid solutions. The general formula of the solid solutions is Bi_{3+ y} Zn_{2− x} Ta_{3− y} O_{14− x − y} , based on the creation of Zn²⁺, O²⁻ vacancies in Zn-deficient compositions and a variable Bi/Ta ratio.     

Effects of B2O3 on the Phase Stability of Ba2Ti9O20 Microwave Ceramic

Preparation of dense and phase-pure Ba₂Ti₉O₂₀ is generally difficult using solid-state reaction, since there are several thermodynamically stable compounds in the vicinity of the desired composition and a curvature of Ba₂Ti₉O₂₀ equilibrium phase boundary in the BaO–TiO₂ system at high temperatures. In this study, the effects of B₂O₃ on the densification, microstructural evolution, and phase stability of Ba₂Ti₉O₂₀ were investigated. It was found that the densification of Ba₂Ti₉O₂₀ sintered with B₂O₃ was promoted by the transient liquid phase formed at 840°C. At sintering temperatures higher than 1100°C, the solid-state sintering became dominant because of the evaporation of B₂O₃. With the addition of 5 wt% B₂O₃, the ceramic yielded a pure Ba₂Ti₉O₂₀ phase at sintering temperatures as low as 900°C, without any solid solution additive such as SnO₂ or ZrO₂. The facilities of B₂O₃ addition to the stability of Ba₂Ti₉O₂₀ are apparently due to the eutectic liquid phase which accelerates the migration of reactant species.     

Effects of Antimony Oxide on the Characteristics of ZnO Varistors

The breakdown voltage, the upturn voltage, and the nonlinearity of the ZnO varistors are significantly influenced by the Sb₂O₃ and SiO₂ contents, as well as by the β→γ transition of the Bi₂O₃ phase. The lattice parameter of spinel is influenced by the coexisting Bi₂O₃ phase. Antimony oxide disperses into the powders of ZnO and other additives in the early stage of sintering, and finally gathers again as particles of spinel which may play an important role in the improvement of the nonlinearity by stressing the interfaces of two ZnO grains.     

Mg–Cu–Zn Ferrites for Multilayer Inductors

Mg–Cu–Zn ferrites can be sintered at T ≤950°C to sufficient density and display adequate permeability profiles for application in multilayer ferrite inductors. The permeability and Curie temperature have to be optimized by proper selection of composition. Ferrites with <50 mol% Fe₂O₃ reveal enhanced densification behavior. Submicrometer powders prepared by fine milling show good sintering activity and density after firing at 900°C. Nano-size ferrite powders prepared by coprecipitation or flame synthesis lead to high density; maximum shrinkage already occurs at T <800°C. The use of Bi₂O₃ as a sintering additive further improves the densification, but also affects the microstructure and, hence, the permeability. A maximum permeability of μ_i=450–500 is obtained.     

Microstructure and Current–Voltage Characteristics of Multicomponent Vanadium-Doped Zinc Oxide Varistors

The effects of the oxide additives MnO₂, Co₃O₄, and Sb₂O₃, commonly incorporated in commercial Bi₂O₃-doped ZnO varistors, on the current–voltage characteristics and microstructure of 0.25 mol% V₂O₅-doped ZnO varistors have been studied. MnO₂ is the most significant additive in terms of its effects on varistor performance. Varistor performance can also be improved by increasing the V₂O₅ content to 0.5 mol% in a ZnO ceramic containing 1 mol% MnO₂. Further increases in the V₂O₅ content of 1 mol% MnO₂-doped material cause a deterioration in varistor behavior. The microstructure of the samples consists mainly of ZnO grains with zinc vanadates as the minority secondary phases. Additional spinel phase is formed when Sb₂O₃ is incorporated.     

Suppression of Rhombohedral-Phase Appearance and Low-Temperature Sintering of Scandia-Doped Cubic-Zirconia

Inhibition of cubic-rhombohedral phase transformation and low-temperature sintering at 1000°C were achieved for 10-mol%-Sc₂O₃-doped cubic-ZrO₂ by the presence of 1 mol% Bi₂O₃. The powders of 1-mol%-Bi₂O₃–10-mol%-Sc₂O₃-doped ZrO₂ were prepared using a hydrolysis and homogeneous precipitation technique. No trace of rhombohedral-ZrO₂ phase could be detected, even after sintering at 1000°–1400°C. The average grain size of the ZrO₂ sintered at 1200°C was >2 μm because of grain growth in the presence of Bi³⁺. Cubic, stabilized Bi-Sc-doped ZrO₂ sintered at 1200°C had sufficient conductivity at 1000°C (0.33 S/cm) to be used as an electrolyte for a solid-oxide fuel cell (SOFC) and at 800°C (0.12 S/cm) for an intermediate-temperature SOFC.     

Dielectric and Magnetic Properties of Low-Temperature-Fired Ferrite–Dielectric Composites

The composition effects on the sintering behavior, microstructure evolution, dielectric, and magnetic properties of BaO·(Nd_0.8Bi_0.2)₂O₃·4TiO₂ (BNBT)+Bi₂O₃–B₂O₃–SiO₂–ZnO (BBSZ) glass–(Ni_0.28Cu_0.12Zn_0.6O)–(Fe₂O₃)_0.99 (NiCuZn ferrite) composites were investigated in developing low-temperature-fired composites for high-frequency electromagnetic interference devices. An X-ray diffractometer, a scanning electron microscope, and a dilatometer were used to examine the BNBT+BBSZ glass powder to NiCuZn ferrite ratio effect on the composites densification and chemical reaction between BNBT and NiCuZn ferrite. The results indicate that these composites can be densified at 950°C with no significant chemical reactions occurring between BNBT and NiCuZn ferrites during sintering. The BNBT+BBSZ glass–NiCuZn ferrite composites sintered at 950°C exhibit excellent dielectric and magnetic properties over a wide frequency range.     

Subsolidus Phase Equilibria in the System Bi2O3-TiO2-Nb2O5

The subsolidus phase equilibria in the system Bi₂O₃-TiO₂-Nb₂O₅ at 1100°C were determined by solid-state reaction techniques and X-ray powder diffraction methods. The system was found to contain 4 ternary compounds, i.e. Bi₃TiNbO₉, Bi₇Ti₄NbO₂₁, a cubic pyrochlore solid solution having a compositional range of 3Bi₂O₃· x TiO₂ (7– x )Nb₂O₅ where x ranges from 2.3 to 6.75, and an unidentified phase, 4Bi₂O₃·11TiO₂·5Nb₂O₅.