Semiconductor pump laser technology

Recent progress in high-power semiconductor lasers for erbium-doped fiber amplifiers is described, focusing on 1.48-μm InGaAsP/InP lasers and 0.98-μm InGaAs/GaAs lasers. The experimental output powers exceed 200 mW (the maximum power was 325 mW) for 1.48-μm lasers, and simulation results indicate that over 400 mW could be obtained by optimizing parameters in strained-layer (SL) multiple-quantum-well (MQW) lasers. Stable operation over a few thousand hours under 100-mW power is demonstrated for liquid-phase-epitaxy-grown lasers, MQW lasers, and SL-MQW lasers grown by all-metal organic vapor-phase epitaxy (MOVPE). For 0.98-μm lasers, improvement in the fiber coupling efficiencies and long-term reliabilities are described. Their power coupled into a single-mode fiber has reached over 100 mW, with coupling efficiencies of approximately 40%. Although reliability seems to be one of the drawbacks compared with 1.48-μm lasers, stable operation for over 10,000 h at 50°C and 30 mW has been reported     

All-optical flip-flop based on coupled laser diodes

An all-optical set-reset flip-flop is presented that is based on two coupled lasers with separate cavities and lasing at different wavelengths. The lasers are coupled so that lasing in one of the lasers quenches lasing in the other laser. The flip-flop state is determined by the laser that is currently lasing. A rate-equation based model for the flip-flop is developed and used to obtain steady-state characteristics. Important properties of the system, such as the minimum coupling between lasers and the optical power required for switching, are derived from the model. These properties are primarily dependent on the laser mirror reflectivity, the inter-laser coupling, and the power emitted from one of the component lasers, affording the designer great control over the flip-flop properties. The flip-flop is experimentally demonstrated with two lasers constructed from identical semiconductor optical amplifiers (SOAs) and fiber Bragg gratings of different wavelengths. Good agreement between the theory and experiment is obtained. Furthermore, switching over a wide range of input wavelengths is shown; however, increased switching power is required for wavelengths far from the SOA gain peak     

4×10Gbit/s并行光模块串扰优化设计

为了对4×10Gbit/s并行光模块光串扰进行优化,采用了ABCD传输矩阵法,结合光纤耦合约束条件以及准直透镜、自聚焦透镜和光纤端面球透镜的理论,设计出两套优化方案。研究了垂直腔面发射激光器光束特性,利用MATLAB进行理论分析,模拟得出光斑半径与发散角的关系,并分析了串扰情况。在ZEMAX非序列模式下完成了光路建模,优化结构中透镜参量以及光纤端面设计,进行了理论分析和实验验证,取得了优化后耦合光斑半径与耦合效率。结果表明,间接耦合优化结构中,到达光纤端面的光斑为53.72μm,耦合效率达到72.59%;而直接耦合优化结构中,到达光纤端面的光斑为3.695μm,耦合效率高达到76.11%,有效地解决了并行光模块之间的光串扰问题。这一结果对光网络信号传输质量优化方面是有帮助的。     

0.98- mu m strained quantum well lasers for coupling high optical power into single-mode fiber

An investigation of epitaxial-layer structures has yielded narrow ridge waveguide structure lasers capable of coupling high optical power into single-mode fiber (SMF). An optical power of well over 60 mW in SMF was obtained for a 2- mu m-wide ridge waveguide laser with a guided separate-confinement-heterostructure (SCH) epitaxial structure. Calculated results indicate that the stringent limit imposed on 0.98- mu m wavelength detuning is relaxed for such high optical power coupled into a SMF. The 0.98- mu m strained-quantum-well lasers thus show considerable promise as a practical low-noise pumping source for Er-doped optical-fiber amplifiers.<>     

High-power output over 200 mW of 1.3 µm GaInAsP VIPS lasers

Maximum CW output power was investigated in GaInAsP 1.3μm V-grooved inner stripe on P-substrate (VIPS) lasers considering both cavity length and facet reflectivity. Long-cavity lasers show a strong dependence of maximum output power on front reflectivity. A CW light output over 200 mW was obtained at room temperature using a 700 μm long cavity laser with 5 and 98 percent reflectivity of the front and rear facets, respectively. The fundamental transverse mode operation was confirmed up to 170 mW. A coupled power over 110 mW into a single-mode fiber was achieved with a coupling efficiency of 58 percent. We have verified the high reliability under high power levels, as high as 75 percent of the maximum CW output powers at room temperature.     

A new scheme of conical-wedge-shaped fiber endface for coupling between high-power laser diodes and single-mode fibers

A new scheme for the lensed fiber employing a conical-wedge-shaped fiber endface (CWSFE) for coupling between the high-powered 980-nm laser diodes and single-mode fibers (SMFs) is proposed. The CWSFE was fabricated by following grinding and polishing techniques and then through heating in a fusing splicer to form an elliptical microlens endface. A coupling efficiency of 84% has been demonstrated. The higher coupling efficiency of the CWSFE lensed fiber was attributed to the better matching of both the elliptical Gaussian field distribution and the aspect ratio between the laser source and the fiber. In comparison to other fabrication techniques of lensed fiber used in high-power diode lasers, the advantages of this novel CWSFE structure are the ability to control over two axial curvatures and a small fiber offset through grinding and polishing processes to form a good elliptical endface. The results of this study have led to the development of a simple and reproducible fabrication process for achieving a high-yield and high-coupling CWSFE structure that is suitable for use in commercial high-power pump laser modules.     

光纤喇曼激光器及多波长输出的分析

为了优化设计光纤喇曼激光器的各项参数,采用喇曼激光器的基本理论模型模拟分析了用DCF光纤做增益介质的光纤喇曼激光器的输出特性,提供了激光器优化设计的方法;通过改变光纤的长度和输出端面的耦合效率得到最优的激光输出;以及改变泵浦功率时输出激光功率的变化情况;并进一步分析了多波长的光纤激光器,得到四波长输出的光纤激光器。     

用于高功率双包层光纤激光器侧面耦合的对称夹层结构

提出了一种基于亚波长衍射光栅理论的介质-金属-介质的对称夹层结构,这种结构因为没有使用诸如折射率匹配液、光学固化胶等承受不了较高温度的黏接物质,所以可以用于大功率激光二极管阵列的侧面抽运,尤其可用于条形半导体激光器侧面抽运双包层掺杂光纤中,以制作各种大功率稀土离子掺杂光纤激光器,并且其耦合效率可以达到80%以上。同时,这种侧面抽运技术还支持多点抽运以及光纤两端同时激射高能激光。     

High-Power Coherent Beam Combining of Two Photonic Crystal Fiber Lasers

Coherent beam combining of two large mode area photonic crystal fiber (LMA PCF) lasers is studied experimentally by using a self-imaging technique. Steady interference strips with high visibility of 35% are observed in high-power operation, which demonstrates the obvious advantages of the LMA PCF over the conventional double-clad fiber in coherent beam combining. Experiments also show that the reflectivity of coupling output mirror affects the coherent output power. The maximum coherent output power of 80 W with approximate 90% combining efficiency is achieved when the pump power is 130 W and the reflectivity of coupling output mirror is 5%.     

光纤耦合模块中光纤焊接技术的研究

大功率半导体激光器列阵的光纤耦合模块对光纤焊接的要求很高,在焊接避免使用有机粘接剂和有助焊剂的金属焊膏,因为其在激光器工作时易挥发出有机物质。这些有机物会污染激光器腔面,致使激光器工作时腔面温度过高。附着在腔面的有机物就会被碳化,影响激光器的出光率,甚至还会导致激光器烧毁。文章介绍用电场辅助焊接的方法,使光纤在硅片的V型槽中固定,在焊接中不使用助焊剂和有机粘接剂,取得了良好效果,减少了激光器腔面的污染,从而提高了半导体激光器光纤耦合模块的寿命。测试结果表明,剪切强度最大可达35MPa。     

耦合强度对公共环形腔耦合式光纤激光器锁相性能的影响

利用公共环形腔耦合实现了两路光纤激光器的无源相位锁定,研究了激光器之间耦合强度对锁相性能的影响。环形耦合腔主要由两个22的光纤耦合器组成,其构成了激光器之间能量相互注入耦合的公共通道,并使它们获得了初步的相位同步。考虑到耦合强度主要由成环光纤耦合器的耦合比决定,建立了分析耦合强度影响的理论模型,并从理论上研究了耦合比的大小和差异对环内光强和输出光强的影响。此外,实验上实现了两路掺铒光纤激光器的有效相位锁定,并通过分析远场干涉光斑和输出功率研究了锁相阵列输出激光束的相干性和合成效率。研究结果表明:足够的能量耦合强度是获得有效相位锁定的必要条件,通过增加耦合比来增大耦合强度可以提高锁相阵列的相干性,但会略微降低合成效率。     

半导体环形腔激光器输出特性理论与实验

首先导出了光纤环形腔半导体激光器中光子数密度的解析表达式后,分别从理论和实验上研究了阈值电流、输出功率和光纤耦合比之间的依赖关系。结果表明,阈值电流与光纤耦合比的对数满足线性关系;同时,在特定的偏置电流下,存在一个最佳的光纤耦合比使输出功率为最大。这将对于环形腔半导体激光器的理论研究和优化器件结构有所裨益。     

Front/back tracking InGaAsP diode laser transmitter modules

Variations in the detected power for movement of a single-mode and a multimode fiber in front of various 1.3-μm InGaAsP diode lasers are measured and compared to the signal obtained from the back-facet monitor. A model to explain the nonlinear relationship between the detected front and back-facet powers is given. This work has application in the design and understanding of stable light sources, biasing of transmitter modules, the fiber attach process, and the interpretation of tests which check the integrity of the fiber attachment     

多路Cr,Tm,Ho:YAG激光器合光路的设计

在介绍国外四路Cr,Tm,Ho:YAG激光器的基础上,提出了三种四路Cr,Tm,Ho:YAG激光器合光路经光纤输出的方案,并进行了比较,最终确定了基于平面的四路Cr,Tm,Ho:YAG激光器合光路设计方案。在三路情况下,当单脉冲最大注入能量为100J,重频30Hz时,激光器直接输出功率50.17W,光纤末端输出功率35.65W,耦合效率为71%。经文献调研,目前所达到的输出功率处于国内领先水平。     

高功率光子晶体光纤激光器及其关键技术

与常规双包层光纤相比,空气包层大模面积光子晶体光纤更适用于高功率激光器的研制.介绍了高功率光子晶体光纤激光器研究的最新进展,分析了耦合系统和谐振腔设计中所存在的不利于功率提高的因素,指出低损耗的熔接技术是光子晶体光纤激光器达到更高功率的关键.     

分布反馈光纤激光器模式特性分析

根据耦合波理论,在分析分布反馈(DFB)光纤激光器纵模特性的基础上,着重阐述其偏振特性。另外给出了偏振态同耦合系数和双偏振态相移量差的关系。理论分析结果表明,当分布反馈光纤激光器输出为0阶模时,输出激光的偏振状态由耦合系数和双偏振态的相移量差共同决定,即在耦合系数一定的情况下,通过增加双偏振态相移量的差,或在双偏振态相移量差一定的情况下,通过减小耦合系数,可以实现单偏振输出。实验中在经载氢处理的掺铒光纤上制作分布反馈光纤激光器,由于耦合系数较大和双折射效应过小,输出为双偏振态。     

光通信系统中新型可调谐半导体激光器的设计

为了适应当前光通信系统对波长可调谐激光器的需求,提出用游标效应来实现波长可调谐的激光器,设计了一种功率稳定且频率可调的三段式开槽法布里-珀罗结构可调谐半导体激光器,给出了系统结构的设计原理,并进行了理论分析和实验验证。取得了三段式开槽法布里-珀罗结构可调谐半导体激光器激射谱叠加图数据,利用光纤延迟自外差法测量激光器线宽,对比了3种不同激光器的线宽测量曲线。结果表明,基于游标效应设计的新型开槽法布里-珀罗可调谐半导体激光器波长调谐机制简单方便,且具有很好的单模性和信道切换能力。该研究在未来的光通信领域中具有一定的应用价值和实际意义。     

High-power and low-divergence 980-nm InGaAs-GaAsP-AlGaAs strain-compensated quantum-well diode laser grown by MOCVD

High-power InGaAs-GaAsP-AlGaAs strain-compensated separate-confinement heterostructure double quantum-well lasers emitting at 980-nm wavelength have been grown by low-pressure metal-organic epitaxial chemical vapor deposition. Fabricated with a ridge waveguide, the lasers achieved an output power of 386 mW in the fundamental lateral mode without any kink being observed. By optimizing the laser structure parameters, a very low transverse beam divergence of 22.1/spl deg/ and a high slope efficiency of up to 0.89 mW/mA were obtained. The narrow transverse far field enables an output power of over 290 mW to be coupled into a single-mode fiber with a high coupling efficiency of 83.2% at 430 mA. Life testing at various powers shows excellent long-term reliability after 3500 h.     

Reduction in reflection-induced chirp from photonic integrated sources

Previously electroabsorption modulated lasers (EMLs) have been demonstrated using source lasers with grating strengths of two or less (k/sub r/L /spl les/ 2.0). Spatial holeburning was believed to limit the magnitude of the optimal grating strength. However, those standard-grating-strength lasers are sensitive to reflections from modulator output facet, integrated amplifiers, combiners, fiber tip, etc. and are a barrier to making integrated modules for long-span transmission. EMLs having record-strength (K/sub r/L > 6) gratings are fabricated. Output power >9.5 dBm, sidemode suppression ratio beyond 50 dB, single-mode yield >60% at high power, and power penalty <0.3 dB at 10 Gb/s for 75 km of fiber are demonstrated.     

An Overgrowth-Free Design for InGaAlAs Spot-Size-Converted Ridge Waveguide Lasers

A great deal of work has been done over the past several years toward the development of lasers with integrated spot-size converters, for better coupling directly to flat cleaved fiber or better alignment tolerance in lensed systems. Many of the techniques, such as butt-coupling or lateral-taper-vertical-shift, require etch-and-regrowth over the active region and as such are not applicable directly to Al-containing lasers. In this letter, we demonstrate a simple method to achieve narrow (15deg times 15deg) far fields in Al-containing devices with a moderate degradation of dc, dynamic and thermal characteristics. At room temperature, uncoated 300-mum-long devices have thresholds of about 18 mA and slope efficiencies of about 0.24 W/A, with 27% power coupled directly into flat cleaved fiber compared to ~10% for a conventional (>30deg far field) device. Comparison between calculated and measured far fields versus ridge width and number of quantum wells gives design curve information for optimizing far field performance.