Thermal oxidation of single crystal aluminum nitride — A high resolution transmission electron microscopy study

The impact of the oxidation time on the structures of thermal oxides formed on AlN was determined by high resolution transmission electron microscopy (HRTEM). Oxidation of AlN single crystals was performed for 2 to 6 h at 1000 °C. Oxidation for 2 h produced mostly amorphous oxide layers whereas oxidation for both 4 and 6 h produced partially crystalline oxide layers. The oxide layer thickness varied from 205 to 600 nm for oxidation times of 2 and 6 h respectively. The crystalline oxide was mostly single phase α-Al₂O₃ except at the surface where it was a mixture of γ-Al₂O₃ and α-Al₂O₃. Based on the different structures produced for different oxidation times, we speculate that the oxide formed changes with thickness: first an amorphous oxide, then γ-Al₂O₃, and finally α-Al₂O₃ as the oxide thickness increases. The AlN crystal was nearly defect- and oxygen-free for oxidation at 1000 °C. This could be due to the rapid diffusion of the nitrogen and aluminum interstitials at a high temperature leading to a point-defect equilibrium throughout the nitride. A faceted interface between Al₂O₃ and AlN could be attributed to the surface diffusion to minimize energy.     

Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials

In this paper we present basic features and oxidation law of the room temperature plasma oxidation, (RTPO), as a new process for preparation of less than 2 nm thick layers of SiO₂, and high-k layers of TiO₂. We show that oxidation rate follows a potential law dependence on oxidation time. The proportionality constant is function of pressure, plasma power, reagent gas and plasma density, while the exponent depends only on the reactive gas. These parameters are related to the physical phenomena occurring inside the plasma, during oxidation. Metal-Oxide-Semiconductor (MOS) capacitors fabricated with these layers are characterized by capacitance-voltage, current-voltage and current-voltage-temperature measurements. Less than 2.5 nm SiO₂ layers with surface roughness similar to thermal oxide films, surface state density below 3 × 10¹¹ cm^− 2 and current density in the expected range for each corresponding thickness, were obtained by RTPO in a parallel-plate reactor, at 180 mW/cm² and pressure range between 9.33 and 66.5 Pa (0.07 and 0.5 Torr) using O₂ and N₂O as reactive gases. MOS capacitors with TiO₂ layers formed by RTPO of sputtered Ti layers are also characterized. Finally, MOS capacitors with stacked layers of TiO₂ over SiO₂, both layers obtained by RTPO, were prepared and evaluated to determine the feasibility of the use of TiO₂ as a candidate for next technology nodes.     

Synthesis and properties of A6B2(OH)16Cl2·4H2O (A = Mg, Ni, Zn, Co, Mn and B = Al, Fe) materials for environmental applications

Double layered hydroxide materials of composition A₆B₂(OH)₁₆Cl₂·4H₂O (A = Mg, Ni, Zn, Co, Mn and B = Al, Fe) were synthesized by chemical precipitation at 60 °C. Different levels of crystallinity and ordering degree were observed depending upon the chemical environment or the combination between divalent and trivalent cations. The results from high-resolution transmission electron microscopy revealed that nanostructured layered samples were obtained with interplanar spacing compatible with previous literature. Raman scattering was employed to investigate the complex band structure observed, particularly the lattice vibrations at lower frequencies, which is intimately correlated to the cationic radius of both divalent and trivalent ions. The results showed that strongly coordinated water and chloride ions besides highly structured hydroxide layers have a direct influence on the stability of the hydrotalcites. It was observed that transition and decomposition temperatures varied largely for different chemical compositions.