Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrate

We investigated defect structures in the GaN film grown on a convex patterned sapphire substrate (CPSS) to determine the origin of structural improvement by transmission electron microscopy (TEM) and laser confocal scanning microscopy (LCSM). From the TEM results, we found that most of the threading dislocations (TDs) in the trench region of the CPSS were bent by lateral growth mode. Also the staircase-like TDs were observed near the curved slant region of the convex pattern; they converged at the top of the convex patterned region by staircase-upward propagation. This scenario seems to effectively prevent TDs from vertical propagation in the trench region. The photoluminescence mapping and spectra obtained by LCSM are consistent with these results from TEM observations. The generation of staircase-like TDs relates to the formation of a terraced surface during the growth, and suggests a probable mechanism that changes the propagation direction of TDs via the curved surface of the CPSS. The lateral growth and staircase-upward propagation of TDs are major factors on structural improvement of the GaN film grown on CPSS.     

Plasma assisted molecular beam epitaxy growth of GaN

The growth of GaN on sapphire by plasma assisted molecular beam epitaxy (MBE) is investigated with the object of optimizing the material quality. The V/III flux ratio as well as the growth temperature are discussed in relation to their impact on electrical, optical and structural layer properties. Samples grown under nearly stoichiometric conditions exhibit both the highest mobilities and the highest photoluminescence efficiencies. Growth temperatures above 800°C were found to result in narrow reflections in X-ray diffraction. However, the chemical decomposition of GaN at temperatures above 850°C limits the suitable temperature range for the growth under high vacuum conditions.     

MOCVD两步生长法制备GaN量子点

报道了用金属有机化学气相沉积方法在蓝宝石衬底上成功地制备出ＧａＮ量子点。     

Investigations of selectively grown GaN/InGaN epitaxial layers

We have studied GaN/InGaN heterostructures grown by selective area low pressure metalorganic vapor phase epitaxy (LP-MOVPE). A GaN layer already grown on the c-face of sapphire has been used as substrate, partly masked by SiO₂. In a second epitaxial step a GaN/InGaN single heterostructure and GaN/InGaN/GaN double heterostructures were grown on the unmasked rectangular fields. We obtained good selectivity for GaN and for InGaN. A larger growth rate as compared to planar epitaxy and strong growth enhancement at the edges was observed. Spatially resolved measurements of the luminescence show an increase in indium incorporation of about 80% at the edges. Besides the larger indium offering at the edges, this is due to an enhanced growth rate. Very smooth facets are obtained. The influence of pressure on the surface morphology and growth enhancement was investigated.     

Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy

Transmission electron microscopy is used to analyse a range of defects observed in hexagonal GaN films grown on sapphire and GaN substrates by metalorganic chemical vapour deposition. Large angle convergent beam electron diffraction is used to analyse the Burgers vectors of dislocations and to show that hollow tubes, or nanopipes, are associated with screw dislocations having Burgers vectors±c. Weak-beam electron microscopy shows that dislocations are dissociated into partials in the (0001) basal plane, but that threading segments are generally undissociated. The presence of high densities of inversion domains in GaN/sapphire films is confirmed using convergent beam electron diffraction and the atomic structure of the {

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} inversion domain boundary is determined by an analysis of displacement fringes seen in inclined domains.     

ZnO nanostructures grown on epitaxial GaN

Presented is the growth of zinc oxide nanorod/nanowire arrays on gallium nitride epitaxial layers. A hierarchical zinc oxide morphology comprising of different scale zinc oxide nanostructures was observed. The first tier of the surface comprised of typical zinc oxide nanorods, with most bridging to adjacent nanorods. While the second tier comprised of smaller zinc oxide nanowires approximately 30 nm in width often growing atop the aforementioned bridges. Samples were analysed via scanning electron microscopy, as well as, cross-sectional and high resolution transmission electron microscopy to elucidate the detailed growth and structural elements of the heterostructure.     

The influence of reactor pressure on qualities of GaN layers grown by hydride vapor phase epitaxy

Influence of reactor pressure on the quality of GaN layers grown by hydride vapor phase epitaxy (HVPE) has been studied. With the reactor pressure decreasing from 7 to 5 × 10⁴ Pa, improvements in structural, optical, and electrical properties of the GaN films have been observed.An investigation of the surface morphology of the GaN films reveals that the improvements arise from the change of the growth mode from an island-like mode at high pressures to a step-flow one at low pressures. These results clearly indicate that the reactor pressure, similar to the growth temperature, is one of the important parameters to control the qualities of HVPE-GaN epilayers.     

Preparation of Porous GaN Buffer and Its Influence on the Residual Stress of GaN Epilayers Grown by Hydride Vapor Phase Epitaxy

The preparation of porous structure on the molecular beam epitaxy （MBE）-grown mixed-polarity GaN epilayers was reported by using the wet chemical etching method. The effect of this porous structure on the residual stress of subsequent-growth GaN epilayers was studied by Raman and photoluminescence （PL） spectrum. Substantial decrease in the biaxial stresse can be achieved by employing the porous buffers in the hydride vapour phase epitaxy （HVPE） epilayer growth.     

Bilayer Cr/Au contacts on n-GaN

Cr/Au (40/65 nm) metal layers have been deposited by thermal evaporation onto n-GaN epitaxial layers grown by metal-organic chemical-vapour deposition (MOCVD) on a sapphire substrate. The samples have been annealed at 400, 700 and 900 °C for 10 min in vacuum. Techniques of TEM, EDS, HRTEM, FESEM, XRD and I-V characteristics have been used to characterize the micro-, and nanostructure, morphology, composition and electrical properties of the contacts before and after annealing. A binary phase of Cr₃Ga₄ and Au₇Ga₂ were identified at the interface of the n-GaN/Cr/Au contacts after annealing in vacuum at 700 and 900 °C. Current-voltage characterizations showed that the as-deposited and annealed Cr/Au contacts are rectifying up to 600 °C. After heat treatment in vacuum at 700 °C and 900 °C the Cr/Au contacts were linear.     

Effect of nitridation on crystallinity of GaN grown on GaAs by MBE

GaN films are grown on [0 0 1] GaAs substrates by plasma-assisted molecular beam epitaxy using a three-step process that consists of a substrate nitridation, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. Films are evaluated by X-ray diffraction and the dependence of crystalline quality on the nitridation temperature is studied. It is demonstrated that nitridation has to be performed at low-temperature to achieve c-oriented α-GaN. Higher nitridation temperature promotes formation of mis-oriented domains and β-GaN inclusions     

TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature

PbSe quantum dot/PbEuTe superlattices were grown on PbTe/BaF₂(111) using molecular beam epitaxy. The spacer thickness was varied from 32.4 to 312 nm and the growth temperature was 335 or 380°C. Three different dot stacking sequences form with either vertical, face-centered cubic like or disordered stacking sequence along the [111] growth direction. The different stacking sequence can be controlled by the thickness of the spacer layer and the growth temperature. The dots are fully strained and the shape of the dots is either triangular pyramids or dome like depending on the spacer layer thickness. An analysis of the lateral and vertical correlation of the dots as well as the size and shape of the buried dots with respect to spacer thickness and growth temperature is presented.     

The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

A comparative study of the defects at the interfaces and inside the layers was carried out in GaN/AlN epitaxial layers on SiC and sapphire. Whereas surface cleaning of the sapphire substrates is rather standardised now, the SiC substrates cleaning is still to optimise conditions, as the high densities of defects inside the epitaxial layers cannot be explained solely by the 3.54% lattice mismatch. The investigated specimens were grown by molecular beam epitaxy (MBE), either assisted by electron cyclotron resonance or an NH₃ gas source system to provide atomic nitrogen. Assuming that MBE is a growth technique more or less close to equilibrium, the observed defects are interpreted and a growth mechanism, for GaN layers on the stepped (0001) SiC and sapphire surfaces, is proposed.     

Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates

Amorphous GaN (a-GaN) films on Si (111) substrates have been deposited by RF magnetron sputtering with GaN powder target. The growth process from amorphous GaN to polycrystalline GaN is studied by XRD, SEM, PL and Raman. XRD data mean that annealing under flowing ammonia at 850-950 °C for 10 min converts a-GaN into polycrystalline GaN (p-GaN). The growth mechanism can be mostly reaction process through N³⁻ in amorphous GaN replaced by N³⁻ of NH₃. Annealing at 1000 °C, the appearance of GaN nanowires can be understood based on the vapor-liquid-solid (VLS) mechanism. In addition, XRD, PL and Raman measurement results indicate that the quality of GaN films increases with increasing temperature. The tensile stress in the films obtained at 1000 °C is attributable to the expansion mismatch between GaN and Si, with the gallium in the film playing a negligible role.     

Effect of substrate temperature on the texture and structure of polycrystalline Si0.7Ge0.3 films deposited on SiO2 by molecular beam deposition

The evolution of microstructure and texture of molecular beam deposited Si_0.7Ge_0.3 films on SiO₂ at the deposition temperature range of 400–700°C was investigated by X-ray diffraction and transmission electron microscopy. At deposition temperatures between 400 and below 500°C, the films were directly deposited as a mixed-phase on SiO₂ and have a inversely cone-shaped structure. In this temperature range deposited as a mixed-phase, the grain size increases as the temperature increases, so that the grains not only grow up by deposition, but also laterally grow by the solid phase crystallization, furthermore, the texture is changed from a {110} texture to mixed {311} and {110} textures. At 500°C, the film was deposited as only a crystalline phase and has a columnar structure with a strong {110} texture. In the temperature range of 500–700°C, as the temperature increases, the {311} and {111} textures develop whereas the {110} texture reduces. The film deposited at 700°C has a random orientation and structure.     

位错对n型GaN 光助电化学腐蚀的中止作用

对用氢化物气相外延（HVPE）方法生长的n型GaN进行光助电化学（PEC）腐蚀研究，发现了位错中止腐蚀的直接证据，并对其机理作了探讨。     

Anodic oxide growth on aluminium surfaces modified by cathodic deposition of Ni and Co

Surface conditions similar to those found in aluminium alloys of practical use were assessed by cathodic deposition of transitions metals (Ni and Co) from different electrolytes. Fundamental aspects concerning with the growth of anodic oxide films at potentials lower than 10 V in neutral acetate buffer solution on these modified surfaces were analysed by common electrochemical techniques complemented with scanning electron microscopy and transmission electron microscopy. In both potentiodynamic and galvanostatic modes, the growth of aluminium oxide competes with the dissolution of deposited metal particles. The formation of a thin aluminium barrier oxide film beneath them shifts the dissolution potential over to 1.5 V towards more positive values. Some particles get progressively embedded in the matrix of the growing alumina and act as cation sources, increasing the film conductivity and diminishing the established electric field in the oxide. This effect is more pronounced with Co deposits due to its high active dissolution rate, before passivation occurs. Then, the generation of a two-layer film is explained in terms of the precipitation of metal hydroxide at the solution side on the oxide barrier film.     

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

ZnSe films and fully developed p-on-n laser structures, including CdZnSe-active and ZnSSe-guiding layers were grown by molecular beam epitaxy (MBE) on lattice matched p-GaAs, p-AlGaAs and p-GaInP buffer layers. The structural characteristics of these layers were studied by combined cross-section and planar view transmission electron microscopy (TEM). The defect density of the ZnS_xSe_1−x epilayers was shown to be very low, <10⁵ cm⁻². However, on their interfaces with the GaAs substrate, a high density of small dislocation loops and clusters of the order of 3×10¹⁰ cm⁻² was observed. In situ TEM experiments revealed that dislocations and stacking faults (SFs) were generated under the electron beam influence. From them, the perfect dislocations were confined at the ZnSe/GaAs interface, while the SFs propagated to the ZnSe overgrowth or the GaAs substrate, having one of their partial dislocations at the interface. The generation of dislocations under the electron beam was not related to radiation damage but to thermal strain, which was developed by the heating effect due to differential thermal dilatation. Defects around the active zone of fully developed p-on-n laser structures were also studied. The nature of such defects was defined by Burgers vector determination experiments. The critical role of growth variations, such as compositional changes resulting in strain, in the MBE process of II–VI materials was demonstrated. The destructive role of the defected guiding layers in the laser structure was shown.     

Graphoepitaxy of High‐Quality GaN Layers on Graphene/6H–SiC

The implementation of graphene layers in gallium nitride (GaN) heterostructure growth can solve self‐heating problems in nitride‐based high‐power electronic and light‐emitting optoelectronic devices. In the present study, high‐quality GaN layers are grown on patterned graphene layers and 6H–SiC by metalorganic chemical vapor deposition. A periodic pattern of graphene layers is fabricated on 6H–SiC by using polymethyl methacrylate deposition and electron beam lithography, followed by etching using an Ar/O₂ gas atmosphere. Prior to GaN growth, an AlN buffer layer and an Al_0.2Ga_0.8N transition layer are deposited. The atomic structures of the interfaces between the 6H–SiC and graphene, as well as between the graphene and AlN, are studied using scanning transmission electron microscopy. Phase separation of the Al_0.2Ga_0.8N transition layer into an AlN and GaN superlattice is observed. Above the continuous graphene layers, polycrystalline defective GaN is rapidly overgrown by better quality single‐crystalline GaN from the etched regions. The lateral overgrowth of GaN results in the presence of a low density of dislocations (≈10⁹ cm⁻²) and inversion domains and the formation of a smooth GaN surface.     

Microstructures of GaN thin films grown on graphene layers

Plan-view and cross-sectional transmission electron microscopy images show the microstructural properties of GaN thin films grown on graphene layers, including dislocation types and density, crystalline orientation and grain boundaries. The roles of ZnO nanowalls and GaN intermediate layers in the heteroepitaxial growth of GaN on graphene, revealed by cross-sectional transmission electron microscopy, are also discussed.     

Growth and structural investigations of epitaxial hexagonal YMnO3 thin films deposited on wurtzite GaN(001) substrates

Epitaxial hexagonal YMnO₃ (h-YMnO₃) films having sharp (00l) X-ray diffraction peaks were grown above 700 °C in 5 mTorr O₂ via pulsed laser deposition both on as-received wurtzite GaN/AlN/6H-SiC(001) (w-GaN) substrates as well as on w-GaN surfaces that were etched in 50% HF solution. High-resolution transmission electron microscopy revealed an interfacial layer between film and the unetched substrate; this layer was absent in those samples wherein an etched substrate was used. However, the substrate treatment did not affect the epitaxial arrangement between the h-YMnO₃ film and w-GaN substrate. The epitaxial relationships of the h-YMnO₃ films with the w-GaN(001) substrate was determined via X-ray diffraction to be (001)_YMnO3 ‖ (001)_GaN : [11¯0]_YMnO3 ‖ [110]_GaN; in other words, the basal planes of the film and the substrate are aligned parallel to one another, as are the most densely packed directions in planes of the film and the substrate. Interestingly, this arrangement has a larger lattice mismatch than if the principal axes of the unit cells were aligned.