Growth and spectroscopy of Dy doped in ZnWO4 crystal

Single-crystal ZnWO₄:Dy³⁺ was grown by Czochralski technique. The XRD, absorption spectra as well as fluorescence spectrum are investigated and the Judd–Ofelt intensity parameters Ω₂, Ω₄, Ω₆ are obtained to be 7.76 × 10⁻²⁰ cm², 0.57 × 10⁻²⁰ cm², 0.31 × 10⁻²⁰ cm², respectively. Calculated radiative transition rate, branching ratios and radiative lifetime for different transition levels of ZnWO₄:Dy³⁺ crystals are presented. Fluorescence lifetime of ⁴F_9/2 level is 158 μs and quantum efficiency is 66%.The most intense fluorescence line at 575 nm correlative with transition ⁴F_9/2 → ⁶H_13/2 is potentially for application of yellow lasers.     

Luminescence quantum efficiency of F2 and F3 centers in LiF crystals

F^-₂ color center in LiF crystals is a unique specie of color centers concerning its photothermal stability, its broad absorption band, centered at 0.96 μm, and its broad emission band peaking at 1.12 μm, being a tunable laser operating in the range from 1.08 μm to 1.22 μm. The luminescence quantum efficiency of the main transition in the laser optical cycle was determined, at room temperature, and its value is 0.5 ± 0.1. This value was obtained using a method correlating the absorption, excitation and photoacoustic spectra. Besides, the luminescence quantum efficiency of the fundamental transition of the F^-₃ color center was determined. Also was estimated the energy transfer efficiency due to the overlapping of the F^-₃ center emission and the F^-₂ center absorption bands. Possible nonradiative deexcitation mechanisms accounting for the small luminescence quantum efficiency of the F^-₂ color centers in LiF are also discussed.     

Enhancement of Er I13/2 population in Y2O3 by energy transfer to Ce

We report measurements of the energy transfer between Er³⁺ and Ce³⁺ in Y₂O₃. The transition between the Er^{3+ 4}I_11/2 and ⁴I_13/2 excited states can be stimulated by energy transfer to Ce³⁺, augmenting the population in the ⁴I_13/2 state at the expense of that in the ⁴I_11/2 state. Experiments were performed on Y₂O₃ planar waveguides doped with 0.2 at.% erbium and 0–0.42 at.% cerium by ion implantation. From measurements of Er³⁺ decay rates as a function of cerium concentration we derive an energy transfer rate constant of 1.3×10⁻¹⁸ cm³/s. The efficiency of the energy transfer amounts to 0.47 at 0.42 at.% cerium. The energy transfer rate constant measured in Y₂O₃ is two times smaller for Er³⁺→Ce³⁺ than that for Er³⁺→Eu³⁺ in the same material.     

Crystal growth and spectral properties of pure and Co-doped Mg3B2O6 crystal

Novel pure and cobalt-doped magnesium borate crystals (Mg₃B₂O₆) have been grown successfully by the Czochralski technique for the first time. Crystal growth, X-ray powder diffraction (XRD) analysis, absorption spectrum, fluorescence spectrum as well as fluorescence decay curve of Co²⁺:Mg₃B₂O₆ (MBO) were described. From the absorption peaks for the octahedral Co²⁺ ions, the crystal-field parameter Dq and the Racah parameter B were estimated to be 943.3 cm⁻¹ and 821.6 cm⁻¹, respectively. The fluorescence lifetime of the transition ⁴T₁(⁴P) → ⁴T₂ centered at 717 nm was measured to be 9.68 ms.     

Synthesis and the luminescent properties of europium-activated Ca2SnO4 phosphors

The synthesis and photoluminescent (PL) properties of calcium stannate crystals doped with europium grown by mechanically activated in a high energy vibro-mill have been investigated. The characteristics of Ca₂SnO₄:Eu³⁺ phosphors were found to depend on the amounts of europium ions. The XRD profiles revealed that the system, (Ca_1−xEu_x)₂SnO₄, could form stable solid solutions in the composition range of x = 0–7% after being calcined at 1200 °C. The calcined powders emit bright red luminescence centered at 618 nm due to ⁵D₀ → ⁷F₂ electric dipole transition. Both XRD data and the emission ratio of (⁵D₀ → ⁷F₂)/(⁵D₀ → ⁷F₁) reveal that the site symmetry of Eu³⁺ ions decreases with increasing doping concentration. The maximum PL intensity has been obtained for 7 mol% concentration of Eu³⁺ in Ca₂SnO₄.     

Yb to Er energy transfer and rate-equations formalism in the eye safe laser material Yb:Er:Ca2Al2SiO7

Rate equations formalism is used to predict the population ratio of the Er^{3+ 4}I_13/2 levels involved in the 1.55 μm laser transition in the Yb:Er:CAS laser materials. An effective Yb → Er energy transfer, favourable to the Er³⁺ 1.55 μm laser emission, is demonstrated in this laser host. Indeed, the Yb → Er transfer and the Er → Yb back transfer rates are calculated to be 6 x 10⁻¹⁶ and 0.45 x 10⁻¹⁶ cm³ s⁻¹, respectively. Attempts of codoping the system with Nd³⁺, Eu³⁺ and Ce³⁺ have been realised in order to increase the population of the Er^{3+ 4}I_13/2 laser emitting level. Best results are obtained with Ce³⁺ ion since in the sample containing 6 x 10²⁰ Ce³⁺/cm³, the Er^{3+ 4}I_11/2 level lifetime is divided by a factor of 3 while the Er^{3+ 4}I_13/2 fluorescence lifetime remains unaffected. On the contrary, codoping with Nd³⁺ or Eu³⁺ ions simultaneously decreases the Er^{3+ 4}I_11/2 and ⁴I_13/2 kinetics parameters. The role of the other parameters such as Yb/Er concentrations ratios is also discussed.     

Spectroscopic investigation of Nd ion in LiNbO3, MgO:LiNbO3 and LiTaO3 single crystals relevant for laser applications

The polarized absorption and luminescence properties of Nd³⁺ doped isostructural LiNbO₃, MgO:LiNbO₃ and LiTaO₃ nonlinear bulk single crystals are reported. Pump-probe experiments associated with the Judd-Ofelt approach are used to estimate two types of room temperature cross sections: polarized emission cross sections of the dominant ⁴F_3/2 → ⁴I_1//2 transition near 1085 and 1093 nm and polarized excited-state absorption cross sections in the same spectral domain and in the green spectral range corresponding to self frequency doubling. Self frequency-doubling results are also given in Nd:LiNbO₃ and Nd:MgO:LiNbO₃ versus sample temperature.     

Optical properties of Er-doped SiO2-GeO2-Al2O3 planar waveguide fabricated by sol–gel processes

In this paper, we report silica based planar waveguides doped with Er³⁺, and co-doped with GeO₂ and Al₂O₃. These sol–gel derived planar waveguides were fabricated on SOS (silica on silicon) using multiple spin-coating and rapid thermal processing (RTP). Investigation has been made on their characteristics in terms of their application in optical amplification and lasing, including photoluminescence (PL), fluorescence lifetime, refractive index, propagation loss, surface roughness, Fourier transform infrared (FTIR) spectrum and X-ray diffraction (XRD) analysis. The propagation loss of a 20-layer planar waveguide was measured to be about 1.6 dB/cm for TE₀ and 2.2 dB/cm for TM₀ mode. A strong emission transition (⁴I_13/2→⁴I_15/2) at 1.536 μm with a lifetime of 3.6 ms has been obtained for an optimized molar composition of 90SiO₂: 10GeO₂: 20AlO_1.5: 1ErO_1.5.     

Deposition and photoluminescence of sol–gel derived Tb:Zn2SiO4 films on SiO2/Si

Tb³⁺ doped Zn₂SiO₄ films have been deposited on SiO₂ buffered Si wafers by sol–gel method. The structures of these films have been investigated with X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). The results revealed that these films were composed of nanometer-size grains with a Willemite structure and had smooth surfaces. Photoluminescence measurements of the films showed a strong emission from ⁵D₄ to ⁷F₅ at 544 nm. The blue emission from ⁵D₃–⁷F_j was depressed because of cross-relaxation effect. The decay kinetics of the ⁵D₄–⁷F₅ green emission was studied and a best fitting was obtained by a double exponential function. The lifetime of the excited ⁵D₄ state is estimated to be 5.2 ms.     

Mn4+激活氧氟化物红光荧光粉的研究进展

稳定可靠的高光子能量发光(620~650 nm)红光荧光粉, 对于构建低色温、高显指荧光粉转换型白光发光二极管(WLED)至关重要。Mn ⁴⁺激活红光荧光粉是当前WLED用荧光粉研究热点之一。本文介绍了Mn ⁴⁺离子的能级跃迁与光致发光特性, 详细叙述了目前所报道的七种Mn ⁴⁺激活含d ⁰/d ¹⁰/s ⁰离子氧氟化物系列红色荧光粉(如Na₂WO₂F₄:Mn ⁴⁺等)的制备方法、晶体结构及其发光特性。目前Mn ⁴⁺在氧氟化物结构中得到强R线发光的情况少, 微观配位体仍是[MnF₆]或[MnO₆], 其化学稳定性和量子效率研究也很缺乏。最后对Mn ⁴⁺激活氧氟化物红光荧光粉的研究进行了展望。     

Optical properties and energy transfer among Nd in Nd:Ca2Al2SiO7 crystals for diode pumped lasers

The energy levels of neodymium in the Nd³⁺:Ca₂Al₂SiO₇ (CAS) laser material with gehlenite structure are reported. As the Nd³⁺:Ca₂Al₂SiO₇ compound presents a broad absorption around 806 nm, it is a good candidate for diode pumped laser. The ⁴F_3/2→⁴I_9/2 and ⁴F_3/2→⁴I11/2 emission have been recorded and the fluorescence branching ratios calculated from the Judd-Ofelt analysis are 0.41 and 0.47 respectively. The emission cross section at 1.06 μm (⁴F_3/2→⁴I11/2 transition) is 5 × 10^-20 cm². The decay profiles of the Nd³⁺ emission have been analyzed for several Nd³⁺ concentrations using the kinetic microparameters related to the cross relaxation ( and R₀≈6 Å) and the energy migration probabilities ( ). In the Nd:CAS laser material, the optimal concentration corresponding to the maximum of the fluorescence intensity is determined to be around 2.7 × 10²⁰ Nd³⁺ ions cm^-3. The Nd³⁺-Nd³⁺ interactions are not very strong in this material as the optical concentration value is two times higher than in the Nd:YAG laser material.     

Precision frequency measurement of the 2S1/2 2D5/2 transition of Sr+ with a 674-nmdiode laser locked to an ultrastable cavity

We have measured the frequency of the 5s ²S_1/2 -4d ²D_5/2 clock transition of a single Sr ion confined in a Paul trap. A diode laser locked to an ultrastable Fabry-Perot (F-P) cavity was used to probe the transition with a resolution of 3.5 kHz. The absolute frequency was determined from heterodyne measurements referenced to an iodine stabilized HeNe laser and a CO₂ laser yielding a value for the S-D transition of (444 779 043 963±30) kHz. This work could lead to the development of a new optical frequency standard at 674 nm     

Optical properties, fluorescence mechanisms and energy transfer in Tm, Ho and Tm -Ho doped near-infrared laser glasses, sensitized by Yb

The optical properties of the rare elements Tm³⁺, Ho³⁺ and Yb³⁺ were systematically investigated in various glasses. The Tm³⁺ doped aluminozircofluoride glass shows higher quantum efficiency, longer lifetime and stronger fluorescence intensity than Tm³⁺ doped YSGG crystal and other Tm³⁺ doped glasses for the ³H₄ → ³H₆ transition. Similar quantum efficiency, longer lifetime and stronger fluorescence intensity were also found in Ho³⁺ doped aluminozircofluoride glass for the ⁵I₇ → ⁵I₈ transition. The higher quantum efficiencies of Tm³⁺ and Ho³⁺ in aluminozircofluoride glass are due to the longer lifetime and the lower phonon energy. The fluorescence mechanisms and energy transfer in the Yb³⁺ -Tm³⁺ system, Yb³⁺ -Ho³⁺ system and Yb³⁺ - Tm³⁺ -Ho³⁺ system were studied. The very strong fluorescence intensities in the Yb³⁺ -Tm³⁺ system for Tm³⁺ and the Yb³⁺ -Tm³⁺ -Ho³⁺ system for Ho³⁺ which are 1.68 times that of Tm³⁺ doped YSGG crystal and 2.25 times that of Tm³⁺---Ho³⁺ codoped YSGG crystal are attributed to the efficient Yb³⁺ → Tm³⁺, Yb³⁺ → Ho³⁺ and Tm³⁺ → Ho³⁺ energy transfer processes. The fluorescence processes are described by cross relaxations of ²F_5/2 → ³H₅ → ³H₄ → ³H₆ → ²F_7/2 and²F_5/2 → ³H₅ (or ²F_5/2 → ⁵I₆ → ³H₅) → ³H₄ → ⁵I₇ → ⁵I₈ → ³H₆ → ²F_7/2.     

Enhancement of red emission assigned to inversion defects in ZnAl2O4:Cr3+ hollow spheres

ZnAl₂O₄:Cr³⁺ hollow spheres composed of secondary nanoparticles with single spinel phase were fabricated using carbon templets. Monitoring the emission of 687 nm, two wide excitation bands attributed to the electrons of Cr³⁺ transiting from ⁴A_2g (⁴F) → ⁴T_1g (⁴F) and ⁴A_2g (⁴F) → ⁴T_2g (⁴F) were observed. The broad excitation band at about 397 nm was asymmetric and consisted of two peaks, indicating that there was a trigonal distortion existing in the lattices. The intensity of all emitting peaks revealed sharp increasing trend with the sintering temperature increase, and the intensity of emission at 698 nm assigned to inversion defects was more intense than that of emission at 687 nm assigned to octahedral Cr³⁺ ions in the undistorted spinel lattice. The samples with higher synthesized temperature revealed longer decay time, and the relative weightage of shorter decay time component decreased with the increase of sintering temperature, indicating that the surface defects decreased.     

YVO4∶Eu3+,Bi3+红色荧光粉的水热合成及其荧光性能

以Y₂O₃、Eu₂O₃、Bi(NO₃)₃·H₂O、浓HNO₃、偏钒酸铵、氨水、无水乙醇和一缩二乙二醇为原料,采用聚乙烯吡咯烷酮(PVP)辅助水热法合成YVO₄: Eu³⁺, Bi³⁺纳米颗粒。使用X射线衍射(XRD)、扫描电镜(SEM)、红外光谱(IR)和荧光光谱(FL)等手段对产品进行了表征和分析。结果表明：合成的样品为YVO₄: Eu³⁺, Bi³⁺纳米颗粒,均具有四方晶相结构,其微结构随反应溶液的的pH值变化。YVO₄: Eu³⁺, Bi³⁺纳米颗粒在619 nm处有较强的红光发射(电偶极跃迁⁵D₀→⁷F₂),在594 nm有较弱的橙光发射(磁偶极跃迁⁵D₀→⁷F₁)。随着Eu/Bi比值的增大材料的荧光先增强后减弱,在Eu/Bi比值为5时样品的红光发射最强。溶液的pH值影响YVO₄: Eu³⁺, Bi³⁺纳米晶的发光强度,其中pH值为10时的样品其红光发射最强。并探讨了YVO₄: Eu³⁺, Bi³⁺纳米晶的发光机理。     

Eu3+掺杂Y2O3单分散红色荧光球形颗粒的尺寸可控合成与荧光性能

结合籽晶法和添加矿化剂硝酸铵, 通过均相沉淀合成和后续煅烧实现了(Y, Eu)₂O₃单分散球形颗粒(直径范围110~550 nm)的可控合成。通过XRD、FE-SEM、TEM和PLE/PL分析等手段对产物进行了系统表征。发现采用籽晶法和添加矿化剂硝酸铵可以促进球形颗粒长大。碱式碳酸盐前驱体经600℃煅烧分解为立方晶(Y, Eu)₂O₃, 且经1000℃煅烧后(Y, Eu)₂O₃依然继承球形形貌特征。所得多晶(Y, Eu)₂O₃球形荧光颗粒在242 nm激发下于615 nm处呈现最强红色荧光发射(Eu³⁺的⁵D₀→⁷F₂跃迁)。荧光粉的荧光性能呈现明显的尺寸依存性。增大球形颗粒尺寸减小了荧光寿命(1.15~1.57 ms)和荧光不对称因子[I(⁵D₀→⁷F₂)/I(⁵D₀→⁷F₁)], 但增强了荧光发射强度。     

Optical properties of Nd:NaLa (WO4)2 single crystal

Nd³⁺-doped NaLa(WO₄)₂ single crystal with a dimension of 20 mm × 40 mm and a good optical quality was grown by Czochralski method. The polarized absorption spectra and emission spectra were measured at room temperature. The absorption cross-section and emission cross-section were presented. The Judd–Ofelt theory, extended to anisotropic system, has been applied to evaluate the intensity parameters Ω_t (t = 2, 4, 6), radiative transition rates A, radiative lifetimes τ_R and fluorescent branching ratios β. The calculated radiative lifetime was compared with the experiment data for the ⁴F_3/2 emitting level. All spectral features are strongly affected by an inhomogeneous broadening connected with the ‘disordered crystal’ character of the title compound.     

Effect of radiation trapping on the emission properties of Er: I13/2 → I15/2 transition in oxide glasses

The effect of radiation trapping on the emission properties of Er³⁺-doped tellurite and phosphate glasses has been investigated as the function of sample thickness and doping concentration. It was found that radiation trapping exists generally in two glass matrices, even at low doping concentration (0.1 mol% Er₂O₃). The larger effect of radiation trapping in tellurite glasses compared with phosphate glasses is due to its larger emission cross-section at 1.5 μm band and the spectral overlap between the emission and absorption spectra of Er³⁺: ⁴I_13/2 ↔ ⁴I_15/2transition. Due to radiation trapping, the measured lifetime of the Er³⁺: ⁴I_13/2 level in tellurite glasses increases by about 11–37% with increasing the sample thickness at the different erbium doping concentration, while 6–17% for phosphate glasses. And the full-width at half maximum of fluorescence (FWHM) of Er³⁺: ⁴I_13/2 → ⁴I_15/2 transition in tellurite glasses increased by about 15–64% with increasing the sample thickness, while 11–55% for phosphate glasses. It caused a high overestimation on the figure of merits (FOM) for amplifier bandwidth (σ_e × FWHM).     

Charge states and optical transitions of vanadium in Bi4Ge3O12 identified by MCD and ODMR

The spectroscopic properties of V-doped Bi₄Ge₃O₁₂ have been investigated in detail via several complementary techniques bringing a series of consistent results. The optical absorption spectrum of annealed samples is strongly modified under UV-illumination and the initial state can be restored optically with visible light. Optical absorption and magnetic circular dichroism (MCD) demonstrate that a diamagnetic defect is partly destroyed during UV-illumination while a paramagnetic one is created. The latter shows a very characteristic S-shaped MCD pattern in the near-IR, which is readily assigned to the ²E→²T₂ internal transition of tetragonal V⁴⁺ centers at the Ge sites. This assignment was further confirmed by optically detected magnetic resonance (ODMR), via the change of the MCD under microwaves at 35 GHz. The g tensor of V⁴⁺ was found to be anisotropic with principal values g_||=1.81±0.03 and g=1.94±0.02. Two additional MCD bands in the visible spectral region could be attributed to V⁴⁺ via ODMR measurements. Ionization thresholds for holes (V⁵⁺) and electrons (V⁴⁺) were determined by optical absorption experiments and the V^4+/5+ donor level was positioned 1.9 eV below the conduction band. The presence of the V^4+/3+ acceptor state in the forbidden band is also suggested.     

Observation of a Sub-10-Hz Linewidth 88Sr+ 2S1/2–2D5/2 Clock Transition at 674 nm

In this paper, a pair of diode lasers at 674 nm, locked to two independent ultralow-expansion high-finesse cavities, have been characterized by monitoring the beat frequency between them. The individual laser linewidth of 1.4 Hz for a 3-s averaging time broadened to 4 Hz at 30 s. The relative frequency stability of the beat at 1s is 2.5 10^-15. One of the lasers has been used to interrogate the ⁸⁸Sr^{+ 2}Si_1/2-²D _5/2 transition at 674 nm, and a transition linewidth of 9 Hz has been observed