等离子体基低能离子注入技术的研究与发展

将低能离子注入技术引入等离子体基离子注入,一方面利用低能离子注入的低能优势,另一方面利用等离子体基离子注入的全方位优势,开发出等离子体基低能离子注入技术。等离子体基低能离子注入技术包括等离子体基低能氮、碳离子注入和等离子体源低能离子增强沉积两类工艺。低能离子的注入能量（０．４～３ ｋｅＶ）达到常规等离子体热化学扩散处理的电压范围,而工艺温度（２００～５００℃）则降至常规离子注入的上限温度范围。通过大量的工艺实验研究,实现了工艺过程的优化和控制,完成了对等离子体基低能离子注入改性铁基材料的金属学问题及物理、化学和力学性能的系统研究。证明了等离子体基低能离子注入技术满足铁基材料的表面改性要求。同时具有产业化发展潜力。     

等离子体基离子注入法制备SOI材料

注氧隔离法（SIMOX）和体硅智能剥离法（Smart-cut）是目前制备绝缘体上的硅（SOI）材料的最重要的两种方法。而离子注入是其中最主要工艺过程。本文简述了等离子体基离子注入（PBII）在制备SOI的两种方法中应用的国内外研究现状。讨论了两种方法中需要考虑的共性问题，包括注入剂量的均匀性、等离子体中离子的选择、单一能量的获得以及避免C、N、O及金属粒子的污染等。并且针对SIMOX和smart-cut各自的工艺特点，分别讨论了不同工艺参数的选择、工艺中出现的主要问题和一些已经得到的解决办法。     

辉光放电离子渗金属的等离子体发射光谱诊断

利用发射光谱法对离子渗金属中辉光等离子体的电子温度进行了诊断。实验以氮气为工作气体，通过对放电时氮离子两条特征谱线强度的相对标定，测量了电子温度随放电气压40Pa～80Pa和电压500V～1000～的变化。并探讨了电子温度随气压和电压变化的原因。结果表明，该放电为典型的反常辉光等离子体放电，电子温度在1eV～15eV之间变化，且随工作气压和电压的的升高迅速增大，这与实际观测的放电效果相符合，实验结果表明，发射光谱法是测量离子渗金属中等离子体参数的一种有效手段。     

常压等离子体渗氮主要工艺参数分析

利用介质阻挡放电，进行了常压非平衡等离子体渗氮，着重讨论了有关工艺参数的影响情况。正交试验结果表明，合理选择放电电压、放电间距和渗氮温度是获得良好渗氮层的关键。在本工艺条件下，适当减小放电间隙，增大电场强度，可以明显提高渗层的硬度和深度。     

等离子体基离子注入制备TiN膜的成分结构

采用Ti、N等离子体基离子注入和先在基体表面沉积纯钛层然后离子注氮混合两种方法在铝合金基体上制备了TiN膜.利用XPS分析了两种方法制备TiN薄膜的成分深度分布和元素化学价态,并用力学性能显微探针测试对比了TiN膜的纳米硬度.研究表明:两种方法制备的薄膜均由TiN组成,Ti、N等离子体基离子注入薄膜中Ti/N≈1.1,而离子注入混合薄膜中Ti/N≈1.3,Ti、N等离子体基离子注入薄膜表面区域为TiN和TiO2的混合组织,TiN含量多于TiO2,离子注入混合薄膜表面主要是TiO2;Ti、N等离子体基离子注入所制备的薄膜的纳米硬度峰值为12.26 GPa,高于离子注入混合的7.98 GPa.     

空心阴极N2+等离子体放电电子温度的研究

利用双层辉光放电空心阴极效应，针对N2发射光谱相对强度的变化，采用SⅡ-Ⅳ型全息凹面光栅单色仪对各种工艺参数条件下的光谱进行测绘，获得一系列谱线及测量数据。通过玻尔兹曼方程式求得不同工艺条件下的N^2＋等离子体的电子温度。并分析了工件电压、源极电压和工作气压对电子温度的影响。结果表明：当工作气压和工件电压一定时，电子温度随源极电压的升高先减小后增大，最后又减小；当源电压一定时，电子温度随工件电压和工作气压的升高而明显减小，并且其减小幅度随源极电压的升高而逐渐降低；当工作气压一定时，工件电压的变化较源极电压的变化对电子温度的影响大。     

新型表面波等离子体源的诊断及不同工艺条件下的等离子体特性

表面波等离子体(Surface-wave-sustained plasma,SWP)是近年发展起来的一种新型低压、高密度等离子体。应用这种技术,很容易实现镀膜过程中的离子束辅助沉积(IBAD),从而制备出性能优异的类金刚石薄膜(DLC)。本文介绍了一种新型的SWP源,说明了朗缪尔探针等离子体诊断的基本原理,研究了微波功率、靶电压、真空度等对等离子体特性的影响。测试了不同工艺条件下的等离子体密度,电子温度,等离子体电位,悬浮电位。研究结果表明,微波功率、靶电压和真空度等参数对等离子体特性具有重要的影响。结果同时表明,这种表面波等离子体源即使在0.85 Pa的真空度下也能够产生高达1.87×1011cm-3的电子密度(在2.8 Pa可达2.1×1012cm-3)。     

不等电位空心阴极Ar等离子体放电发射光谱的诊断

等离子体中电子激发温度是等离子体的一个重要物理参数之一,对材料表面改性具有非常重要的意义。本实验以Ar气为工作气体,利用发射光谱法对双层辉光放电等离子体参数进行在线诊断。依据气体放电中的光谱发射谱线强度与等离子体的电子激发温度有关,本实验选择了650~800 nm范围Ar原子谱线,通过玻尔兹曼方程,采用多线-斜率法对等离子体电子激发温度进行了估算。实验研究了工件电压、源极电压、工作气压等工艺参数对电子激发温度的影响,测量了电子激发温度的空间分布。实验结果表明,随工件电压的升高,电子激发温度先减小后增大,变化过程中有一个电子激发温度突变过程;不同工件电压下,工作气压对电子激发温度的影响规律不同;空间分布测量可知,中间部位处的电子激发温度要比两边高;而源极电压较小时,对电子激发温度影响不太明显。     

网状结构Si3N4陶瓷增强金属基复合材料的研究

利用有机前驱体浸渍法制备了Si3N4网络陶瓷预制体,利用液态金属浸渗法制备出Al基、Mg基复合材料：分析了在浸渗过程中浸渗温度、润湿角、浸渗时间、浸渗高度的相互关系。在压力下金属液克服浸渗阻力．使浸渗得以完成。网络陶瓷骨架孔筋表面覆盖一层氧化膜有利于自发娄渗的进行。合金中适量镁元素的存在使平面上发生轻微化学放热反应．对浸渗有利。指出压力浸渗制备铝基复合材料与无压浸渗制备镁基合材料的特点。探计了这种复合材料抗压强度和摩擦磨损性能特点。指出Si3N4／Al复合材料，Si3N4/Mg复合材料抗磨擦性能明显优于基休．抗拉强度大大高于基体。     

TiAl合金表面等离子渗铬工艺

用双层辉光离子渗金属技术,在TiAl合金表面渗入铬元素,形成合金层。研究了温度、气压、源极电压、阴极电压等工艺参数对渗层成分、厚度及显微组织的影响。结果表明,在源极电压700V、阴极电压450-280V、极间距18mm、试样温度1050℃、工作气压25Pa和保温时间4h的工艺参数条件下,渗铬层厚度可达60μm,渗层成分呈梯度分布,表面硬度明显提高。     

Metallurgical applications of ion implantation and ion bombardment

The physical background to the metallurgy of ion implantation is discussed. For instance, the fate of implanted atoms is considered in the content of the precipitation processes which occur as a consequence of exceeding the solubility limit during implantation.The Metallurgical applications of ion implantation and ion bombardment are discussed under the following headings: surface and interfacial energies, surface applications, superconductivity and void formation.     

Graphene synthesis by ion implantation

We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electrical measurements, is comparable to previously reported synthesis methods. The implantation synthesis method can be generalized to a variety of metallic substrates and growth temperatures, since it does not require a decomposition of chemical precursors or a solvation of carbon into the substrate.     

The ion implantation of ZnS

The properties of ZnS single crystals doped by the Ag ion implantation (an acceptor) and zinc (a donor) were investigated. The annealing of the Ag doped samples in H₂ resulted in an occurrence of the “silver” luminescence centres with the photoluminescence maximum at 454 nm. The doped layer depth is ～500Å at the ion energy of 45 keV. At the annealing of the samples in the S and ZnS vapours the doped layer acquires the p-type conductivity. The doping of n-type ZnS crystals by Zn ions increases their conductivity. At the smooth decrease in the ion beam energy the “ohmic” contact is obtained on the samples.     

Fingerprinting diamonds using ion implantation

It is possible to ion implant patterns in diamond crystals at fluences below that which would impart visible damage and then to reveal those patterns by electrostatic charging and dusting. The charge distribution — and therefore the dust attachement — is related to the difference in electrical conductivity between the implanted region and the rest of the crystal. The technique may have applicability for fingerprinting or personalizing diamond gemstones.Retired.     

Microalloy layer formation by ion implantation

In this article we emphasize the new opportunities made available to crystal growers by the access to earth-orbiting spaceships for a fairly large duration. Spacelab capabilities are briefly described; there follows a survey of the benefits expected from vapour growth in space. It is also shown that material processing in space is associated with severe but inherent constraints which may compete with its attractiveness.     

Cubic BN formation by ion implantation

Boron nitride was synthesized by nitrogen ion implantation. Boron films were prepared as implantation targets on single-crystal Si(100) substrates by 13.56-MHz radio frequency sputtering. The diatomic single 30-keV nitrogen ions were chosen for implantation. The implantation dose ranged from 1×10¹⁷ ions/cm² to 2×10¹⁸ ions/cm². The films were characterized using a transmission electron microscope. Several phases of boron nitride were found at the medium implantation dose. At the high dose of 2×10¹⁸ ions/cm², the pure c-BN phase was observed. It is believed that the transition from the low ordered phases to c-BN phase occurred during implantation. The films showed good adhesion to the Si substrate.     

Metastable alloy formation by ion implantation

Implantation into metals at room temperature and at lower temperatures can result in the formation of metastable phases. For low concentrations (not more than about 1 at.%) substitutional and interstitial solutions have been observed for implantation in beryllium, iron, nickel and copper. These results have been explained in terms of modified Hume-Rothery rules and also Miedema coordinates. At higher concentrations (not less than about 10 at.%) both metastable solid solutions and amorphous alloys have been formed in iron, nickel and copper.