Co2Z软磁铁氧体薄膜的磁性能

首先用球磨法制备了BaxCo2Fe24O41铁氧体粉料,烧结后制得块体材料,然后以其为靶材,用射频磁控溅射的方法在单晶硅基片上制备了膜厚为100nm的铁氧体薄膜.实验表明,沉积态的薄膜为非晶态结构,经过高温热处理后形成了较好的磁铅石结构.研究了成分、热处理温度、氧分压对薄膜结构和磁性能的影响.通过对热处理温度和氧分压的...     

磁控溅射制备V2O5薄膜及全固态薄膜锂电池研究

V_2O_5具有容量高、循环稳定、易于制备成薄膜等特点,是全固态薄膜锂电池理想的正极材料。采用磁控溅射法,以V_2O_5为靶材制备了薄膜,研究了溅射气体Ar/O_2对薄膜结构、形貌及电化学性能的影响,优化了薄膜制备工艺。最终采用磁控溅射法依次沉积集流体薄膜、钒氧化物薄膜、固态电解质薄膜,真空热蒸发金属锂薄膜,成功制备了Al/V_2O_5/Li P ON/Li/Cu全固态薄膜锂电池。薄膜电池在1.7～3.4 V电压范围内,以10μA/cm~2恒电流充放电测试,电池比容量达到25μAh/cm~2,稳定循环超过500次。     

NiZn铁氧体靶材及薄膜的磁性能和微观结构

首先采用固相反应法制备NixZn1-xFe2O4铁氧体靶材(x=0.2～0.8),研究了Ni取代量对靶材性能的影响;并选用Ni0.5Zn0.5Fe2O4靶材,采用射频磁控溅射法在Si(100)基片上制备了NiZn铁氧体薄膜.靶材样品的分析结果表明,随Ni含量增加,样品的X射线衍射峰向高角方向移动,晶格常数和平均晶粒尺寸都单调减小;当x=0.5～0.6时,NixZn1-xFe2O4铁氧体饱和磁感应强度Bs较高,矫顽力Hc较小.薄膜样品的分析结果表明,制备的薄膜经800℃退火后,呈尖晶石结构,并沿(400)方向择尤取向;薄膜的饱和磁化强度Ms和面内矫顽力Hc分别为310kA/m和8.833kA/m.     

磁控溅射制备免退火钴酸锂正极薄膜的研究

采用射频磁控溅射法制备钴酸锂正极薄膜,通过对溅射功率的研究,制备出不需要进行退火处理仍具有60μAh/(cm2·μm)的比容量的正极薄膜.采用×射线衍射(XRD)和扫描电子显微镜(SEM)对钴酸锂薄膜的结构和形貌进行了研究,并分析了其对钴酸锂薄膜正极性能的影响.结果表明不同功率制备的钴酸锂薄膜具有不同的结晶取向和结晶度,其对正极薄膜的性能有具有决定性的影响,适合的功率下制备的钴酸锂薄膜在不退火处理的情况下仍具有较高的容量和较好的循环性能.同时研究了采用磁控溅射的铝薄膜作为集流体,代替铂或金等贵金属薄膜集流体,大幅减低了薄膜电池正极的制备成本.     

用于CIGS太阳电池的AZO特性研究

采用射频磁控溅射方法制备掺铝氧化锌(AZO)薄膜,研究了气体流量对薄膜晶体质量及光电性能的影响。测试结果表明,当氩气流量为70 m L/min时制备的薄膜结晶较好,方块电阻为8.25Ω/□,电阻率为4.46×10-4Ω·cm,玻璃基底上可见光范围内的平均透过率为83.56%,综合性能最优,可用于CIGS薄膜太阳电池。采用光谱椭偏仪研究薄膜的光学特性,通过建模计算得到350~800 nm波段内AZO薄膜的光学常数,并通过作图法计算得到薄膜的光学禁带宽度为3.38 e V。     

多层结构聚丙烯薄膜储能特性的研究

为提高材料的储能性能,研究多层结构对聚丙烯薄膜储能特性的影响,同时控制介电损耗在实际应用允许范围内.通过热压法制备不同层数的多层结构聚丙烯薄膜,对试样进行电学性能测试.多层结构聚丙烯的电学性能测量结果表明,三层结构170℃热压时聚丙烯薄膜储能密度最大,比单层结构提高了20.2％.多层结构可提高聚丙烯薄膜储能特性.     

铜铟镓硒柔性薄膜太阳电池的制备及性能表征

以厚度为25～70mm的钛箔为衬底,直流磁控溅射法制备0.8～1.2mm的底电极Mo薄膜,而后以CuIn和CuGa靶交替溅射制得Cu-In-Ga金属预制膜,再以真空硒化法制得CuIn1-xGaxSe2薄膜。以化学浴沉积法制备缓冲层CdS,射频磁控溅射法制备ZnO和ZAO,直流磁控溅射法制备上电极,制得结构为衬底Ti/Mo/CIGS/CdS/ZnO/ZAO/Al,其光电转换效率达到7.3%(25℃,AM0)。     

采用USP-CVD沉积SnO2透明导电膜--F、Sb掺杂及特性研究

以F、Sb掺杂,采用超声雾化喷涂化学气相沉积工艺制备出二氧化锡透明导电膜。对SnO2∶F薄膜的沉积工艺进行了研究,探索出最佳的工艺条件,沉积出方块电阻低达6 赘/□左右的高透过率透明导电薄膜,其可见光平均透过率可以达到85%。分析了HF和NH4F掺杂的不同点。对在两种最佳工艺条件下沉积的膜的结构、电学性质进行了研究。对SnO2∶Sb薄膜的电学性质进行了研究,用X射线衍射方法分析了在同一温度下,不同Sb掺杂浓度的膜的结构。并对薄膜的透过率、折射率及光学带隙等光学性质进行了分析。     

制备条件对Fe-Ta-N薄膜的结构和软磁性能的影响

应用射频磁控溅射法制备了Fe-Ta-N薄膜,系统地研究了制备工艺地Fe-Ta-N薄膜结构和软磁性能的影响,首先,制备了不同钽含量的薄膜,发现（Fe89.5Ta10.5）-N薄膜具有很好的软磁性能,氮分压P（N2）=5%时,矫顽力获得最小值,Hc=14A/m。此时,样品呈现纳米晶结构,晶粒尺寸D≤10∧-8m,并且,钽掺杂能抑制铁氮化合物的生成,使薄膜在高氮分压范围内具有高的饱和磁化强度,Ms=1242kA/m。其次,考察了热处理对（F89.5Ta10.5）-N薄膜结构和磁性能的影响,P(N2）=5%时,沉积态薄膜为非晶结构,矫顽力很大;在热处理过程中,薄膜逐渐晶化,400℃热处理后,晶化度达到40%,形成纳米晶结构,矫顽力迅速减小,最后,比较了不同溅射功率和总气压对（Fe89.5Ta10.5）-N薄膜结构和磁性能的影响,发现薄膜可在较大的溅射功率和总气压范围内保持优异的软磁性能,是非常适于工业生产的薄膜磁头材料。     

薄膜厚度对Ni-Zn铁氧体薄膜性能的影响

采用射频磁控溅射法在Si(100)基片上沉积Ni0.5Zn0.5Fe2O4铁氧体薄膜,研究了薄膜厚度对其结构和性能的影响.结果表明,在800℃空气中退火时,Si基片与Ni-Zn铁氧体薄膜存在相互渗透.随薄膜厚度增加,薄膜样品晶格常数及晶粒尺寸增大,饱和磁化强度Ms和矫顽力Hc均略有增加.     

Study on the electrical and optical properties of ITO and AZO thin film by oxygen gas flow rate

Transparent conductive oxide (TCO) thin films such as tin doped indium oxide (ITO), zinc doped indium oxide (IZO) and Al doped zinc oxide (AZO) have been widely used as transparent electrode for display. ITO and AZO thin films for display was prepared by the facing targets sputtering (FTS) system. The FTS method is called a plasma-free sputter method because the substrate is located apart from plasma. This system can deposit the thin film with low bombardment by high energetic particles in plasma such as γ-electrons, negative ions and reflected Ar atoms. ITO and AZO thin films were deposited on glass substrate at room temperature with oxygen gas flow rate and input power. And the electrical, structural and optical properties of the thin films were investigated. As a result, the resistivity of ITO, AZO thin film is 6?×?10^?4 Ω cm, 1?×?10^?3 Ω cm, respectively. And the optical transmittance of as-deposited thin films is over 80% at visible range.     

Electrical, optical, and structural properties of ITO co-sputtered IZO films by dual target magnetron sputtering

We have investigated electrical, optical, and structural properties of indium tin oxide (ITO) co-sputtered indium zinc oxide (IZO) film prepared by a dual target direct current (DC) magnetron sputtering at room temperature in pure Ar ambient. It was shown that the resistivity and sheet resistance of ITO co-sputtered IZO films monotonically increased with increasing DC power of ITO target at constant DC power of IZO target. Synchrotron X-ray scattering and scanning electron microscope examination results show that addition of ITO in the IZO film lead to crystallization of IZTO film due to low transition temperature of the ITO from amorphous to crystalline. However, ITO co-sputtered IZO film (ITO/IZO power?=?100 W:100 W) exhibit higher work function than those of pure IZO and ITO film. It was found that the work function as well as the electrical, optical, and surface properties of the IZTO film could be controlled by varying the DC power of IZO and ITO targets, respectively.     

Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering

Indium tin oxide (ITO) films have been prepared by r.f. magnetron sputtering using powder target. X-ray diffraction analysis indicates that the deposited films were polycrystalline and retained a cubic bixbite structure. The ITO films deposited at low substrate temperature (T _s) exhibit a (411) preferred orientation but the films deposited at high T _s prefer a (111) orientation. The substrate temperature was found to significantly affect the electrical properties. As the T _s was increased, the conductivity of ITO films was improved due to thermally induced crystallization. The lowest resistivity (8.7?×?10^?4 Ω-cm) was obtained from ITO films deposited at 450 °C. However, optical properties of the films were somewhat deteriorated. The infrared (IR) reflectance of the film increases with increasing the substrate temperature.     

Effects of oxygen partial pressure on the preferential orientation and surface morphology of ITO films grown by RF magnetron sputtering

In this study, effects of oxygen pressure in the sputtering ambient on the preferential orientation and resultant surface morphology of ITO films grown by RF magnetron sputtering were investigated. ITO film grown with pure Ar gas shows a preferential (400) plane orientation parallel to the substrate surface and a sawteeth-shaped rough surface. ITO film grown in the sputtering ambient of Ar and oxygen mixtures shows a preferential (222) plane orientation and a flat and smooth surface. The differences in the growth rate, surface morphology, and roughness between the preferentially orientated films were discussed in terms of the surface energy of planes. The electrical and optical properties of the films were examined.     

Conducting oxide electrodes for ferroelectric films

Abstract

Suitability of oxide electronic conductors [e.g. ruthenium oxide (RuO_x) and indium-tin-oxide (ITO)] as contact metallization for ferroelectric films (e.g. PbZr_xTi_1?xO₃) was investigated using techniques such as Rutherford backscattering spectrometry, x-ray diffraction and electron spectroscopy for chemical analysis. Thin films of RuO_x and ITO were deposited on Si substrates by reactive sputtering. Either PbO or PZT (x = 0.53) films were deposited onto the conducting oxides and the specimens were annealed at various temperatures between 400°C and 700°C. Less intermixing was found in Si/RuO_x/ PZT films when compared to Si/ITO/PZT under similar processing conditions. The ferroelectric properties of PZT films on RuO_x electrodes are compared to those on Pt electrodes. The PZT films show improved fatigue properties on RuO_x electrodes.     

Electrochromic property of the viologen-anchored mesoporous TiO2 films

The electrochromic properties of the viologen-anchored mesoporous TiO₂ (Meso-TiO₂) films were investigated in this work. The Meso-TiO₂ films, synthesized by evaporation-induced self-assembly (EISA) process, deposited on ITO electrodes were a worm-like structure with an average pore diameter of 7.0 nm. The electrochromic devices (ECDs) fabricated from the Meso-TiO₂ demonstrated 3 times of coloration efficiency and considerably faster switching response, compared with those from the nanocrystalline films made of the 7 nm-sized TiO₂ nanoparticles. The advantage of the Meso-TiO₂ would originate from the well-organized mesopore structures, offering an efficient electrolyte transport as well as the fast electron transfer from the ITO electrode to the anchored viologen.     

Drying temperature effects on the electro-optic coefficients of PZT thin films

Abstract

PZT thin films were fabricated on ITO/glass substrates using sol-gel method. The main processing variable was the drying temperature: 300, 350, 450 and 500°C. The microstructure and electric properties (polarization and dielectric constant) were investigated. The electric properties were dependent on the perovskite phase content and the grain size affected by the nucleation of perovskite phase. The two-beams polarization interferometer was used for the measurement of electro-optic coefficients of PZT thin films, and these values were analyzed by comparing the electric properties.     

Characteristics of Bi4Ti3O12 thin films on ITO/glass and Pt/Si substrates prepared by R.F. sputtering and rapid thermal annealing

Bi₄Ti₃O₁₂ thin films are deposited on ITO/glass and Pt/Ti/Si(100) substrates by R.F. magnetron sputtering at room temperature. The films are then heated by a rapid thermal annealing (RTA) process conducted in oxygen atmosphere at temperatures ranging from 550–700^∘C. X-ray diffraction examination reveals that the crystalinity of the films grown on Pt/Ti/Si is better than that of the films grown on ITO/glass under the same fabrication conditions. SEM observation shows that the films grown on Pt/Ti/Si are denser than those grown on ITO/glass substrates. Interactive diffusion between the Bi₄Ti₃O₁₂ film and the ITO film increases with the increase of annealing temperature. The optical transmittance of the thin film annealed at 650^∘C is found to be almost 100% when the effect of the ITO film is excluded. The relative dielectric constants, leakage currents and polarization characteristics of the two films are compared and discussed.     

Processing and Dielectric Properties of Sol-Gel Derived PMN-PT (68:32) Thin Films

PMN-PT thin films near MPB were prepared using sol-gel technique. A transparent solution of the ceramic was prepared by using lead acetate trihydrate, magnesium ethoxide, niobium ethoxide and titanium isopropoxide as precursors along with 2methoxyethanol as solvent and acetic acid as catalyst. Thin films of the ceramic were prepared on Pt/Si and on ITO coated glass substrates. X-ray diffraction (XRD) studies show the formation of perovskite phase of the films with less than (5%) pyrochlore phase. Scanning electron microscopy (SEM) study of the films on different substrates show well developed grains of sub-micron size. Dielectric constant measurement at different temperature was carried out. Room temperature value of dielectric constant and dielectric loss at 1 kHz of the ceramic thin films on ITO coated glass and Pt/Si substrates were found to be 500, 0.03 and 415, 0.01 respectively. Dielectric measurements for different thicknesses of the films have also been carried out. P-E loop and I-V studies of the films were also carried out.