片式多层微波器件用Ca[(Li0.33Nb0.67)0.8Ti0.2]O3-δ微波介质陶瓷的制备

研究了烧结助剂Bi2O3对添加锌硼硅玻璃的Ca[(Li0.33Nb0.67)0.8Ti0.2]O3-δ陶瓷烧结特性、微观结构和介电性能的影响,分析了该陶瓷与银电极的共烧行为.结果表明随着Bi2O3添加量增加,陶瓷体气孔含量减少,体密度和介电常数εr增加,而品质因数Q×f值下降,频率温度系数τf由正值变为负值.添加7.5%(质量分数)锌硼硅玻璃和3.0%(质量分数)Bi2O3的陶瓷样品在900℃烧结,其介电性能εr=36.73,Q×f=10 396GHz(336GHz),τf=-3.27×10-6/℃.陶瓷与银电极共烧界面结合状况良好,无明显扩散.该材料可用于制造片式多层微波器件.     

低温烧结ZnO-TiO2陶瓷的结构与微波介电性能

研究了CuO-V2O5-Bi2O3(CVB)低熔化合物对ZnO-TiO2二元体系相关系和介电性能的影响规律.发现少量CVB添加剂可有效降低ZnO-TiO2陶瓷的烧结温度;烧结温度对相稳定性和介电性能影响显著,当CVB的添加量为2%(质量分数)时,可使烧结温度降至850℃,并具有优异的微波介电性能,其ε=30.5,Q×f32 000GHz,τf=10×10-6/℃;增加CVB的加入量对介电常数影响不大,但使Q×f值显著降低,而进一步提高烧结温度则会使介电常数和谐振频率温度系数显著提高,而品质因数下降.     

添加Li2O-MgO-B2O3玻璃的Li2MgTi3O8陶瓷的微波介电性能及其与Ag共烧相容性

研究添加Li2O-MgO-B2O3玻璃对Li2MgTi3O8陶瓷的烧结特性、相纯度、微观组织和微波介电性能的影响。结果表明：添加少量的玻璃能有效地将陶瓷的烧结温度从1025℃降低到875℃,且没有恶化陶瓷的微波介电性能。添加1.5%玻璃的陶瓷在875℃烧结4 h后具有优良的微波介电性能能,其介电常数εr=25.9,品质因数Q×f=45403 GHz,谐振频率温度系数τf≈0。陶瓷和Ag电极共烧几乎不发生化学反应,表现为良好的化学相容性。所制备的陶瓷可望用于低温烧结的多层微波器件。     

V2O5溶胶掺杂Li1.05Nb0.55Ti0.55O3微波介质陶瓷的烧结特性及介电性能

研究了V2O5溶胶含量对Li1.05Nb0.55Ti0.55O3陶瓷烧结特性及介电性能的影响.实验结果发现,V2O5溶胶与基质形成低熔点LiVO3界面相,促使Li1.05Nb0.55Ti0.55O3烧结温度从1 100℃降至900℃;XDR表明,LiVO3相在烧结后期固溶入M相晶格中.随V2O5添加量增加,致密化温度降低,介电常数εr减少,品质因子Qf降低,频率温度系数τf变化较小掺加2%V2O5(质量分数,下同)溶胶的Li1.05Nb0.55Ti0.55O3陶瓷在900℃烧结2 h,其微波介电性能εt=60.2,Qf=3 868 GHz,τf=35.7×10-6/℃.     

掺杂CuO-TiO2凝胶的Al2O3微波介质陶瓷低温烧结

研究了掺Cu/Ti凝胶的氧化铝胶凝体特性、烧结行为以及微波介电性能.研究发现随着Cu/Ti比的增加,系统成胶凝体条件苛刻,易出现沉淀现象;在(C4H9O)4Ti,(CH3COO)2Cu的乙醇混合溶液中添加Al2O3粉料,Cu/Ti在氧化铝表面形成均质的胶状体;氧化铝的胶状体在750℃热处理后,CuO和TiO2结晶完全,形成Al2O3-CuO-TiO2混合体系,温度升高到1 050℃左右,生成CuO-TiO2低熔点化合物,促使氧化铝烧结温度降至1 360℃以下,剩余的TiO2弥散在氧化铝的晶粒间;以Cu/Ti=0.510的氧化铝胶凝体的综合性能最佳,在1 360℃烧结4 h,其微波介电性能为εr≈10.92,Q×f=30 540 GHz,τf=-5.6×10-6/℃.     

低温烧结制备BaO-Nb2O5系微波介质陶瓷及性能研究

通过控制原料配比及添加不同成分的添加剂,在较低温度下采用固相烧结法合成了BaO-Nb2O5系微波介质陶瓷。通过改变原料配比及添加B2O3、CuO等添加剂,该类陶瓷的烧结温度可降至850℃左右。改变粉料的预烧温度也使得微波介质陶瓷的最终性能有一定的改变。结果表明,BaO:Nb2O5(摩尔比)为2.42:1的粉体经过1000℃预烧后,添加一定量的添加剂可在875℃下烧成,并具有如下微波介电性能:εr为41.23,Q×f为21500GHz,τf为6.2×10-6℃-1;实验证明该类陶瓷满足低温共烧陶瓷(LTCC)的工艺要求并可以与银电极共烧。     

Sol-Gel法引入添加剂制备低温烧结 ZnTiO3微波介质陶瓷

研究了溶胶-凝胶法引入ZnO-B2O3-SiO2的ZnTiO3低温烧结陶瓷材料合成、结构、烧结及介电性能.结果发现ZnO-B2O3-SiO2溶胶均匀包覆在ZnTiO3颗粒表面,形成球形包覆颗粒.用溶胶-凝胶法引入ZnO-B2O3-SiO2制备的样品容易致密烧结,晶粒大小均匀,气孔率比固相法引入ZnO-B2O3-SiO2玻璃制备的样品小.以溶胶-凝胶方式引入ZnO-B2O3-SiO2制备的ZnTiO3陶瓷εr偏差±0.3,Q×f偏差±1000 GHz,离散性小于以固相法引入ZnO-B2O3-SiO2玻璃制备的ZnTiO3陶瓷的性能(εr偏差±0.8,Q×f偏差±2 100GHz),可用于制造对εr偏差更小的小型多层微波频率器件.     

Bi3+离子取代对Ba6-3xLn8+2xTi18O54陶瓷结构与微波介电性能的影响

研究了Bi3+取代Ln3+对Ba6-3xLn8+2XTi18O54(LnSm,Nd)固溶体陶瓷的结构与微波介电性能的影响规律.对于Ba4[(Sm1-yNdy)1-zBiz]9 33Ti18O54,Bi3+取代对晶粒生长有促进作用,且使介电常数提高,但使Q·f值降低.xRD分析表明,对于y=0.2,当Bi3+的取代量z≤0.06时,材料保持类钙钛矿钨青铜单相结构,而当取代量较多时,类钙钛矿结构失稳,转变为(BiSm)2TiO7第二相,而对于y=0.7,则在Bi取代量达0.20时仍能保持单相钨青铜结构.且当z=0.10时,可获得优化的介电性能为ε=90.2,Q·f=9090GHz,τf=8.7×10-6/℃.     

原料和掺杂对钛酸锌陶瓷烧结及介电性能的影响

采用化学法结合传统的氧化物固相烧结法合成钛酸锌(ZnTiO3)粉体,掺杂V2O5作为烧结助剂降低陶瓷的烧结温度,研究了原料活性对钛酸锌陶瓷低温烧结的影响,以及V2O5对钛酸锌陶瓷低温烧结行为和微结构的影响.结果表明钛酸锌陶瓷低温烧结对所选取的原料极为敏感,TiO2对陶瓷烧结影响很大;V2O5有效的将钛酸锌陶瓷的烧结温度从1100℃降到875℃,900℃烧结样品的相对密度达96.1%;同时,V2O5的加入降低了六方相ZnTiO3的分解温度,并导致晶粒异常长大;异相的产生严重影响了陶瓷的介电性能,在微波频段下,900℃烧结掺杂0.75%V2O5(质量分数,下同)钛酸锌陶瓷的Q×f=8873GHz,εr=21.3.     

Zn2SiO4微波陶溶胶-凝胶法制备及性能研究

以Zn(NO3)2·6H2O和正硅酸乙酯为前驱体,乙醇作为溶剂,采用溶胶-凝胶法制备了ZnzSiO4微波陶瓷粉体,并研究了粉体的烧结特性和微波介电性能.干凝胶在800℃热处理后得到的ZnO和Zn2SiO4纳米级混合粉体.溶胶凝胶法制各的粉体具有更大的比表面积,使作为粉体烧结驱动力的表面能剧增,促使陶瓷在1200～1350℃实现致密烧结,比固相法合成粉体的烧结温度降低近200℃,并具有优异的介电性能:εr=6.14,Qf=67,500 GHz(12 GHz).     

Fe-15Ce合金在H2-CO2、H2-H2S及H2-H2S-CO2气氛下的腐蚀

研究了600℃时Fe-15Ce合金在H2-CO2、H2-H2S及H2-H2S-CO2 3种气氛中的腐蚀行为，Fe-15Ce合金腐蚀后发生了Ce的内氧化或形成了复杂的腐蚀产物膜，而未出现Ce的选择性氧化或硫化，这主要是合金中存在着两相及Ce在Fe中极低的溶解度的结果。Fe-15Ce合金在本实验条件下的氧化-硫化腐蚀速度低于相同温度、压力下的纯硫化。     

用氢-氧取代氧-乙炔作焊接切割的必要性及可行性

阐述了用氢代乙炔的必要性．通过时HGQU2000／315火焰电孤焊割机的考察和试用证实了用氢代乙炔的可行性，比较了两种气体的性质并提出了使用特性差异和注意事项．提出了进一步探索的问题。     

Thermodynamics and phase diagrams in the binary systems Na2O-SiO2, Na2O-GeO2, Na2O-B2O3, Li2O-B2O3, CaO-B2O3, SrO-B2O3, and BaO-B2O3

We applied our model to the enthalpy of mixing data of the binary systems Na₂O-SiO₂, Na₂O-GeO₂, Na₂O-B₂O₃, Li₂O-B₂O₃, CaO-B₂O₃, SrO-B₂O₃, and BaO-B₂O₃. The most stable composition in the liquid, that is where the enthalpy of mixing is most negative, is with a metal-oxygen ratio of 4 to 3, for monovalent metals (Na and Li) and 3 to 4 for divalent metals (Ba and Ca) in liquid silicates or borates. The same applies to the CaO-SiO₂, CaO-Al₂O₃, PbO-B₂O₃, PbO-SiO₂, ZnO-B₂O₃, and ZnO-SiO₂ systems. The oxygen to metal ratio, its constant value in various types of systems, reflects and describes the structure of the liquid. Using the analyzed enthalpies of mixing data and the available phase diagrams, we calculated the enthalpies of formation of the various binary compounds. The results are in excellent agreement with data in the literature that were obtained from direct solid-solid calorimetry.     

IrO2-MnO2中间层Ti/RuO2-TiO2-SnO2电极制备及性能

通过热分解法制备了含IrO2-MnO2中间层Ti/RuO2-TiO2-SnO2电极,采用SEM、EDX、XRD、CV等检测方法对中间层进行表征,同时采用强化加速寿命试验对电极电化学稳定性进行表征。结果表明:450℃时前躯体完全氧化并形成固溶体,制备的中间层晶粒细小,表面结构致密,电化学孔隙率小。添加中间层使Ti/RuO2-TiO2-SnO2电极强化寿命由未加中间层的7.5h提高到995.8h,远高于国家标准20h。     

ACTIVITY OF La_2O_3 IN LIQUID La_2O_3-CaF_2 AND La_2O_3-CaF_2-CaO-SiO_2 SLAGS

用石墨为还原剂,将渣中La_2O_3还原入液态Sn,以测定1500℃下La_2O_3-CaF_2和La_2O_3-CaF_2-CaO-SiO_2渣中La_2O_3的活度.对La_2O_3-CaF_2系,并用Gibbs-Duhem积分法求得CaF_2的活度. 根据液态渣的离子结构模型,对上述二渣系中La_2O_3的活度数据进行了简单的讨论.     

Mechanoluminescence in BaSi2O2N2:Eu

Mechanoluminescence (ML), a general term for the phenomenon in which light emission occurs during any mechanical action on a solid, can be divided roughly into two classes: destructive ML and non-destructive ML. For practical use in high-end applications (e.g. pressure sensors), materials with non-destructive ML properties are preferred. This paper reports on the strong non-destructive ML in BaSi₂O₂N₂:Eu. When irradiated in advance with ultraviolet or blue light, this phosphor shows intense blue-green light emission upon mechanical stimulation such as friction or pressure. The ML has an emission band peaking at 498 nm, which is ～4 nm red-shifted compared to the steady-state photoluminescence. The origin of the ML is discussed and related to the persistent luminescence of BaSi₂O₂N₂:Eu. The same traps are responsible for both phenomena. Based on the occurrence of ML in this phosphor, we were able to show that the predominant crystallographic structure of BaSi₂O₂N₂:Eu belongs to space group Cmc2₁.     

氢分子在贮氢材料Li2MgN2H2表面的吸附与解离

采用第一性原理计算方法研究了Li-Mg-N-H体系贮氢材料的放氢产物Li2MgN2H2的吸氢反应过程中的过渡态、表面电子态密度和表面能。结果表明:氢分子在Li2MgN2H2低指数表面中最低能量(100)表面的Mg-Mg-Li穴位吸附位置能够形成最稳定的吸附结构并发生解离,氢分子吸附能为-0.1898eV,解离能约为0.84eV(81kJ/mol),表明该反应所需的反应活化能仍较高,吸氢反应速度缓慢。     

Thermodynamic evaluation of phase equilibria in the CaCl2-MgCl2-CaF2-MgF2 system

The phase diagram of the CaCl₂-CaF₂-MgCl₂-MgF₂ reciprocal ternary system was calculated thermodynamically from available data on the common-ion binary subsystems and from available data on the CaCl₂-MgF₂ join. This join is very nearly quasibinary and divides the system into two quasiternary systems: the CaCl₂-MgF₂-CaF₂ system with a ternary eutectic calculated at 724 +-5 °C and the CaC₂-MgF₂-MgCl₂ system with a ternary eutectic calculated at 561 +-5 °C.     

High temperature corrosion of Fe-Cr-Mn-alloys in H2-H2S and H2-H2O-H2S gas mixtures

The sulfidation of Fe-20% Cr-30% Mn, Fe-25%Cr-20%Mn and Fe-25% Cr was studied at 700°C in H₂-H₂S and the oxidation and sulfidation in H₂-H₂O-H₂S after preoxidation in H₂-H₂O. The sulfidation rate is strongly increased for the Mn-containing alloys, layers of (Mn,Cr)S and (Mn,Fe)Cr₂S₄ are formed. Also the oxidation rate is enhanced compared to Fe-25% Cr by formation of MnCr₂O₄ instead of Cr₂O₃. The sulfidation after preoxidation leads to internal and external sulfidation of the Mn-containing alloys. With increasing oxygen pressure p(O₂) = 10^?26…10^?22 atm. of the H₂-H₂O-H₂S mixtures the sulfidation is suppressed, for the higher oxygen pressure 10^?23 and 10^?22 atm. fast oxidation prevails under formation of MnCr₂O₄. Manganese cannot increase the sulfidation resistance of alloys, in spite of the stability and low degree of disorder of its sulfide, since the mixed sulfide (Mn,Cr)S is formed which has a high degree of disorder, high diffusivities and high growth rate according to the doping effect of trivalent Cr³⁺.     

The Quasi-Ternary System Cu2Se-Ga2Se3-GeSe2

The quasi-ternary system Cu₂Se-Ga₂Se₃-GeSe₂ was investigated using the methods of differential thermal and x-ray analysis. An isothermal section at 770 K and a liquidus surface projection of the phase diagram were constructed. The existence of the quaternary phase CuGaGeSe₄, the boundaries of solid solutions ranges of the system compounds were established.