Sn催化的Ga掺杂ZnO纳米线的制备及其光致发光性能研究

采用化学气相沉积的方法,以Sn粉为催化剂制备出大长径比的Ga掺杂ZnO纳米线。采用扫描电子显微镜观察制备的产物,发现样品为直径约25～90nm的纳米线。通过比较不同Ga掺杂含量样品的室温光致发光谱,发现一定掺杂含量的Ga可以提高ZnO纳米线的紫外发光强度,同时,Ga的掺杂也会引起ZnO紫外发光峰的蓝移。随着Ga含量的增加,蓝移程度越来越小,甚至发生红移。Sn的引入只对Ga掺杂ZnO纳米线的蓝绿光有贡献。     

ZnO/BaTiO3纳米复合材料的制备及其发光性质

采用溶胶-凝胶技术制备了ZnO/BaTiO3纳复合材料，用X射线衍射仪（XRD）、透射电子显微镜（TEM）测定了不同温度处理后样品的组成、结构、形貌和尺寸。对复合材料室温下的光致发光谱分析发现，复合材料的发光强度比纯的纳米ZnO发光显著增强；纳米ZnO中氧空位引起的510nm发光带的峰位随着热处理温度的不同而分别出现蓝移和红移现象。其中蓝移主要是量子尺寸效应引起的，而红移则可能与致密化的BaTiO3所提供的高介电场有关。     

ZnO/BaTiO3纳米复合材料的制备及其发光性质

采用溶胶-凝胶技术制备了ZnO/BaTiO₃纳米复合材料,用X射线衍射仪(XRD)、透射电子显微镜(TEM)测定了不同温度处理后样品的组成、结构、形貌和尺寸.对复合材料室温下的光致发光谱分析发现,复合材料的发光强度比纯的纳米ZnO发光显著增强;纳米ZnO中氧空位引起的510nm发光带的峰位随着热处理温度的不同而分别出现蓝移和红移现象.其中蓝移主要是量子尺寸效应引起的,而红移则可能与致密化的BaTiO₃所提供的高介电场有关.     

铁、镉复合掺杂氧化锌纳米粉体的制备及其光降解性能

以ZnCl2,CdSO4,FeCl3和CO(NH2)2为原料采用水热合成法制备了铁镉复合掺杂ZnO纳米材料,并用红外、紫外光谱、XRD等技术对材料进行了表征。以甲基橙为降解底物,以紫外光为光源,探讨了前驱体的干燥温度、干燥时间、煅烧温度、煅烧时间、铁镉的掺杂量以及降解体系pH值对样品光催化降解甲基橙的影响。结果表明:铁、镉复合掺杂制得的改性ZnO粉体属六方晶系,掺杂的铁、镉离子进入了ZnO晶格,没有新相出现,粒子直径在8~9nm;掺杂使得样品红外吸收增加,紫外-可见光谱出现蓝移;在160℃下干燥30min,290℃煅烧1h时所得1.65%Fe-0.39%Cd-ZnO纳米材料的光催化能力最好;在弱碱性条件下,加入质量1g/L时,样品对浓度为20mg/L甲基橙光照2h,其光催化降解率超过85%;甲基橙的光降解遵从一级反应动力学规律。     

溶胶-凝胶法生长（002）高度择优取向的ZnO∶Al薄膜

采用溶胶-凝胶法在石英衬底上制备了高度择优取向的ZnO∶Al薄膜。用X射线衍射（XRD）、扫描电子显微镜（SEM）分别对薄膜结构和形貌进行了表征,用紫外-可见透射光谱和四探针研究了薄膜的光电性能。结果表明：制备的ZnO∶Al薄膜为六角纤锌矿结构,且具有明显的c轴择优取向;Al离子的掺杂浓度和退火温度对薄膜的结构、光电性能有一定的影响,薄膜在可见光区的光透过率为80%~95%;Al的掺杂浓度为1%样品在600℃下空气中退火1h后,薄膜最低的电阻率为7.5×10-2Ω.cm。     

纳米氧化锌的制备及其光致发光性能研究

采用低温蒸发和气相输运方法,研制出ZnO的纳米棒－纳米钉、纳米钉类球状聚集体和具有钉状结构的纳米梳。利用透射电子显微镜和X射线衍射仪对其形貌与结构进行了表征,阐明了ZnO纳米结构的生长机理。用荧光光谱仪测量了退火前后纳米棒－纳米钉结构的光致发光谱,结果显示,在380nm处两者均存在近紫外峰,在500nm处出现绿色宽谱峰,而退火2h后近紫外发光峰窄而强,且发生了少许蓝移,此现象可归因于退火后的ZnO纳米结构具有较低的点缺陷浓度。     

ZnO薄膜中与Zn原子缺陷相关的发光特性研究

ZnO薄膜中可见光的发射与缺陷有关,为了研究ZnO薄膜中与Zn原子缺陷相关的发光特性,将不同Zn缓冲层厚度的ZnO薄膜沉积在Si衬底上,且所有样品在400℃下真空中退火1 h,采用X射线衍射谱(XRD)、吸收谱和光致发光谱(PL)表征了样品的晶体结构和光学特性。结果表明,随着Zn缓冲层溅射时间的增加,ZnO薄膜中的紫光峰向长波段发生了红移,且所有的发光峰强度逐渐增加;缓冲层和真空中退火都使得样品中有过量的Zn原子缺陷出现,薄膜中所有的发光峰与Zn原子缺陷相关。     

Al掺杂浓度对氧化锌纳米棒结构和光学性能的影响

采用水热合成法以15min的溅射时间,0.7Pa的溅射压强制备的ZnO种子层玻璃片为衬底,制备出具有较好光致发光性能的Al掺杂ZnO纳米棒。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和光致发光谱(PL)谱表征了样品的晶体结构、表面形貌和光致发光性能。结果表明,不同的Al掺杂浓度对于ZnO纳米棒产生了一定的影响,适当的Al掺杂使ZnO纳米棒的c轴择优取向更好,改善了ZnO的近紫外发光和蓝色发光特性。其结晶质量随着Al掺杂量的增加而降低,而且纳米棒的顶端在逐渐变细。随着Al~(3+)浓度的增加,纳米棒的光学性能先变好后变差,在Zn~(2+)与Al~(3+)的浓度比为1∶0.02时,纳米棒的光学性能效果最佳,紫外发光峰强度最大,并且出现了蓝移。     

高质量ZnO薄膜的退火性质研究

在LP－MOCVD中，我们利用Zn(C2H5)2作Zn源，CO2作氧源，在（0002）蓝宝石衬底上成功制备出皮c轴取向高度一致的ZnO薄膜，并对其进行500℃-800℃四个不同温度的退火。利用XRD、吸收谱、光致发光谱和AFM等手段研究了退火对ZnO晶体质量和光学性质的影响。退火后，（0002）ZnO的XRD衍射峰强度显著增强，c轴晶格常数变小，同时（0002）ZnOX射红衍射峰半高宽不断减小表明晶粒逐渐增大，这与AFM观察结果较一致。由透射谱拟合得到的光学带隙退火后变小，PL谱的带边发射则加强，并出现红移，蓝带发光被有效抑制，表明ZnO薄膜的质量得到提高。     

Sn掺杂ZnO纳米带的制备及其光致发光性能研究

采用热蒸发法制备了单晶Sn掺杂ZnO纳米带,其中Sn的掺杂含量约为5%(原子分数).X射线衍射(XRD)结果表明Sn掺杂ZnO纳米带为单相纤锌矿结构.X射线光电子能谱(XPS)表明样品中Sn的价态为4+.样品的室温光致发光谱(PL)在445.8nm处存在较强的蓝光发射峰,对其发光机制进行了分析.     

Doped ZnO nanowires obtained by thermal annealing

Doped ZnO nanowires were prepared in a very simple and inexpensive thermal annealing method using ZnSe nanowires as a precursor. As doped, P doped, and As/P codoped ZnO nanowires were obtained in this method. X-ray diffraction shows that the zincblende ZnSe nanowires were converted to doped wurtzite ZnO nanowires. The incorporation of the dopants was confirmed by energy dispersive X-ray spectroscopy. The doping concentration could be adjusted by changing the annealing temperature and duration. Scanning electron microscopy indicated that the morphology of the ZnSe nanowires was essentially retained after the annealing and doping process. Photoluminescence spectroscopy also verified the incorporation of the dopants into the nanowires.     

RF溅射稀土掺杂ZnO薄膜的结构与发光特性

通过射频磁控溅射技术在Si(111)衬底上制备了未掺杂和La、Nd掺杂ZnO薄膜.XRD分析表明,ZnO薄膜具有c轴择优生长,La、Nd掺杂ZnO薄膜为纳米多晶薄膜.AFM观测,La、Nd掺杂ZnO薄膜表面形貌较为粗糙.从薄膜的室温光致光谱中看到,所有薄膜都出现了395 nm的强紫光峰和495 nm的弱绿光峰,La掺杂ZnO薄膜的峰强度增大,Nd掺杂ZnO薄膜的峰强度减弱,分析了掺杂引起PL峰强度变化的原因.     

ZnO纳米棒Al掺杂和A1,N共掺杂的制备技术与光致发光性能

采用水热法首先合成了Al掺杂ZnO(AZO)纳米棒,在此基础上通过550℃的氨气氛中退火制备了Al,N共掺杂ZnO(ANZ())纳米棒.运用X射线衍射(XRD),场发射扫描电镜(FESEM),透射电子显微镜(TEM),X射线能谱(EDS)和光致发光(PL)对样品进行了表征与分析.结果表明,制备的AZO和ANZ()纳米棒...     

Synthesis and photoluminescence properties of aligned Zn2GeO4 coated ZnO nanorods and Ge doped ZnO nanocombs

Aligned Zn₂GeO₄ coated ZnO nanorods and Ge doped ZnO nanocombs were synthesized on a silicon substrate by a simple thermal evaporation method. The structure and morphology of the as-synthesized nanostructure were characterized using scanning electron microscopy and transmission electron microscopy. The growth of aligned Zn₂GeO₄ coated ZnO nanorods and Ge doped ZnO nanocombs follows a vapor-solid (VS) process. Photoluminescence properties were also investigated at room temperature. The photoluminescence spectrum reveals the nanostructures have a sharp ultraviolet luminescence peak centered at 382 nm and a broad green luminescence peak centered at about 494 nm.     

Thermal annealing induced structural and optical properties of Ca doped ZnO nanoparticles

In this letter, the effects of annealing on structural and optical properties of Ca doped ZnO nanoparticles have been investigated. X-ray diffraction analysis reveals that the prepared particles are in hexagonal wurtzite structure and formation of secondary phase related to the Calcite was found after thermal annealing. UV–Vis measurements show free exciton absorption band appeared at 372 nm and increase of band gap with annealing of samples. Room temperature photoluminescence (PL) spectrum of the prepared Ca doped ZnO nanoparticles shows bands which belong to the near band edge emission at 377 nm and green emission at 556 nm. Annealed samples exhibit enhancement in the blue emission band. Raman spectra show the increment in the electron–phonon coupling value with annealing.     

ZnO纳米线的气相沉积法自催化生长及发光性能研究

介绍了一种通过气相沉积法自催化生长氧化锌纳米线的方法。氧化锌纳米线的生长方向为〈001〉,其尺寸随反应温度的升高而增大。光致发光分析表明绿光发射强度随氧化锌纳米线尺寸而变化。当氧化锌纳米线直径小至5～10nm时,由于量子效应而表现出非常强的绿光发射。     

Dependence of photoluminescence and electrical properties with rapid thermal annealing in nitrogen-implanted ZnO films

Undoped (as-grown) ZnO films grown by pulsed laser deposition on Al₂O₃ (0001) substrates were doped with nitrogen by means of an ion implantation process. Post-implantation annealing behavior in the temperature range between 500 and 700 °C has been studied by photoluminescence and Hall effect measurements. The implanted films show no peak other than the excitonic recombination emission in the as-implanted state, however, after rapid thermal annealing at 700 °C they reveal a nitrogen acceptor related emission at 3.273 eV. The as-implanted ZnO films show more electron concentrations than the as-grown, unimplanted ZnO film. In contrast, after annealing, the electron concentration in the implanted films is significantly reduced, indicating that the incorporated nitrogen becomes activated after the thermal annealing, then produces holes and eventually compensates for certain amount of electrons. The results imply that a proper nitrogen implantation and subsequent annealing may be a way to produce p-type ZnO films.     

Study of structural and optical properties of Ge doped ZnO films

The Ge doped ZnO films were deposited on quartz substrates by radio frequency magnetron sputtering. The effects of doping and substrate temperature on the structural and optical properties of the Ge doped ZnO films were investigated by means of X-ray diffraction (XRD), UV-visible transmission spectra, X-ray photoelectron spectroscopy and photoluminescence (PL) spectra. The XRD patterns showed that Zn₂GeO₄ phases were formed in the films. With the increase of substrate temperature the crystallization of Zn₂GeO₄ was improved, and that of ZnO phases turned worse, and no diffraction peak of ZnO was observed when the substrate temperature was 700 °C. Obvious ultraviolet (UV) light emission was found due to ZnO grains, and it was much stronger than that of un-doped ZnO films. The enhancement of UV light emission at about 380 nm may be caused by excitons which were formed at the interface between Zn₂GeO₄ and ZnO grains. In the visible region of the PL spectra, the green light emission peak of samples at about 512 nm was associated with defects in ZnO. A red shift of the green light emission peak was observed which can be explained by the fact that there is a luminescence center at about 548 nm taking the place of the defect emission of ZnO with the increase of substrate temperature. The red shift of the green light emission peak and the 548 nm green light emission peaks of the PL spectrum show that some Ge²⁺ should replace the Zn²⁺ positions during the Zn₂GeO₄ grains growth and form the Ge²⁺ luminescence centers in Zn₂GeO₄ grains.     

Growth and Photoluminescence Properties of Tetrapod-Shaped ZnO Microcrystals-Whiskers and Microrods

Tetrapod-shaped ZnO microcrystals in forms of whiskers and microrods have been grown in the same crucible by thermal evaporation of Zn/C mixtures at a temperature of 930℃ in air without using any catalyst. The tetrapod-shaped ZnO microrods were capped by hexagonal pyramids. It is for the first time observed that the tetrapod-shaped ZnO whiskers and microrods have quite different morphologies, and this is believed to be a result of different growth behaviors associated with these two forms of ZnO microcrysta...     

Study of Influence of Annealing Time on Some Physical Properties of ZnO:Cu Nanorods Grown by a Simple Chemical Bath Deposition Method

A simple chemical bath deposition method was used to prepare high density ZnO nanorods on ZnO seeded Si substrates. Upon the nanorods growth, Cu-doping was achieved by diffusion process at 500 ^°C for different times in vacuum ambient. The structural, optical, and magnetic properties of the obtained ZnO:Cu nanorods were then examined. XRD analysis showed that undoped and ZnO:Cu samples were highly c-axis oriented with a hexagonal wurtzite structure. SEM analysis indicated that ZnO:Cu nanorods had diameters of ～200 nm and lengths of ～1.5 μm. X-ray photoemission spectroscopy demonstrated that Cu was successfully doped into ZnO in a divalent state. Photoluminescence results showed that Cu-doping caused a decrease in the green band intensity of nanorods compared to undoped ZnO. Room temperature magnetic measurements showed that pure ZnO nanorods exhibited ferromagnetism that might be ascribed to defect-induced d⁰ ferromagnetism. All the ZnO:Cu nanorods also showed the room temperature ferromagnetism that was attributed to the bound magnetic polarons (BMPs).