Si3N4薄膜的DC—PCVD沉积工艺及结构

用不附加另外电源的ＤＣ－ＰＣＶＤ装置沉积Ｓｉ３Ｎ４薄膜，，ＸＲＤ ＴＥＭ检查出这种Ｓｉ３Ｎ４是非晶态、ＩＲ，ＡＥＳ验证这种薄膜的主要成分是Ｓｉ３Ｎ４、ＴＥＭ与ＯＭ研究 薄膜组织结构。     

ECR—PECVD制备Si3N4硬质陶瓷薄膜的研究

采用电子回旋共振等离子体化学气相沉积（ＥＣＲ－ＰＥＣＶＤ）技术制备了Ｓｉ３Ｎ４薄膜。利用显微硬度计测定了Ｓｉ３Ｎ４薄膜的表面微硬度。由摩擦测试机对ＳｉＮ４薄膜的摩擦性能进行了测试分析。结果表明，Ｓｉ３Ｎ４薄膜的摩擦系数和单位时间的磨损量较小，该膜具有良好的耐磨性和耐划伤能力。     

LCDV法沉积Si3N4薄膜微透镜的研究

介绍了一种利用激光化学气相沉积技术，在平面石英玻璃衬底上沉积平凸形Ｓｉ３Ｎ４球面介质膜用作微透镜，包括ＬＣＶＤ的实验装置及其沉积工艺，实验结果表明，只要适当控制源气体的化学配比与浓度，调节激光功率与衬底上的聚集激光光斑尺寸，选择适当的沉积时间，就可以获得不同直径、透明、表面光滑的Ｓｉ３Ｎ４球面介质膜，用作微透镜。     

用微波等离子体CVD制备C3N4薄膜

采用微波等离子体化学气相沉积法（ＭＰＣＶＤ）,使用高纯Ｎ２（９９．９９９％）和ＣＨ４（９９．９％）作反应气体,在多晶Ｐｔ（９９．９９％）基片上沉积Ｃ３Ｎ４薄膜。Ｘ射线能谱（ＥＤＸ）分析结果表明Ｎ／Ｃ原子比为１．０～１．４,接近Ｃ３Ｎ４的化学比;Ｘ射线衍射谱（ＸＲＤ）说明薄膜主要由β－和α－Ｃ３Ｎ４组成;Ｘ射线光电子谱（ＸＰＳ）、傅立叶变换红外谱（ＦＴ－ＩＲ）和喇曼（Ｒａｍａｎ）谱说明在Ｃ３Ｎ４薄膜     

氮化碳薄膜的结构与特性

采用射频等离子体增强化学气相沉积（ＣＶＤ）＋负偏压热丝辅助方法直接在Ｓｉ（１００）衬底上制备了多晶Ｃ_３Ｎ_４薄膜．Ｘ射线衍射测试表明,薄膜同时含有α－和β-Ｃ_３Ｎ_４晶相以及未知结构,没有观测到石墨衍射峰．利用扫描电子显微镜观测到线度约２μｍ、横截面为六边形的β－Ｃ_３Ｎ_４晶粒．纳米压痕法测得薄膜的硬度达７２．６６ ＧＰａ．     

MPCVD法在Si衬底上生成β—C3N4晶态薄膜的研究

以Ｎ２,ＣＨ４作为反应气体,采用微波等离子体化学气相沉积法（ＭＰＣＶＤ）进行碳氮膜的合成研究。通过控制反应温度、气体流量、微波功率、反应气压,在Ｓｉ（１１１）和Ｓｉ（１００）基底上气相合成β－Ｃ３Ｎ４晶态薄膜。扫描电子显微镜（ＳＥＲＭ）下观察到生长在Ｓｉ基底上的薄膜具有六角晶棒的密结构。ＥＤＸ分析胡沉积条件的不同,六角晶棒中Ｎ／Ｃ在１．０～２．０之间。Ｘ射线衍射分析（ＸＲＤ）发现薄膜中含有β－Ｃ３     

（CH3）2SiCl2和N2H4反应产物裂解逸出气体与粉体组成关系的研究

采用（ＣＨ３）２ＳｉＣｌ２和Ｎ２Ｈ４反应产物为先驱体，在Ｈ２，ＮＨ３气条件下，用ＣＶＤ法制备Ｓｉ／Ｃ／Ｎ的纳米微粉，在制备Ｓｉ／Ｃ／Ｎ纳米微粉的过程中通过高温炉－气相色谱联用技术分析了裂解逸出的气体，用化学法分析了微粉中元素组成变化，讨论了先驱体Ｈ２，ＮＨ３气体条件下的裂解机理及微粉的形成机理。     

电沉积Ni—P,Ni—P—Si3N4非晶态合金及其结构,性能研究

研究了Ｎｉ－Ｐ、Ｎｉ－Ｐ－Ｓｉ３Ｎ４非晶态合金薄膜的是沉积工艺，通过ＳＥＭ－ＥＤＳ，ＸＲＤ，ＥＭＰＡ等微观分析方法，提出了获取８￣１４ｗｔ％Ｎｉ－Ｐ和Ｎｉ－Ｐ－Ｓｉ３Ｎ非晶合金镀层的镀液组成和电沉积参数。实验表明，Ｎｉ－Ｐ非晶态合金镀层在碱液中具有优越的耐蚀性能，在含Ｃｌ＾－１的中性盐液中有良好的耐蚀性，且不产生点蚀；Ｎｉ－Ｐ－Ｓｉ３Ｎ４非晶合金镀层，经晶化处理后，耐蚀性能提高，且与基材呈冶金结合     

热作模具钢热疲劳性能与铝液腐蚀性能研究

对４Ｃｒ５ＭｏＳｉＶ１钢和３Ｃｒ２Ｗ８Ｖ钢分别进行３ＳＮＣ－ＲＥ共渗加氧化、ＳＮＣ共渗加氧化和ＳＮＣ－ＲＥ共渗等表面处理，并对经处理的试样分别进行了热疲劳性能和铝液腐蚀性能试验研究。     

氮化碳薄膜的X射线衍射分析

研究了生工在硅片，合金钢片上的氮化碳薄膜的Ｘ射线衍射谱（ＸＲＤ），实验结果表明在硅片上先生长Ｓｉ３Ｎ４过渡层和对样品进行热处理，有利于β－Ｃ３Ｎ４晶体的生成，不同晶面的硅衬底，生长Ｃ３Ｎ４薄膜的晶面不同，合金钢片上Ｃ３Ｎ４薄膜，出现七个β－Ｃ３Ｎ４衍射峰和六个α－Ｃ３Ｎ４衍射峰，这些结果与β－Ｃ３Ｎ４和α－Ｃ３Ｎ４的晶面数据计算值相符合。     

Thermal barrier coatings produced by chemical vapor deposition

Yttria stabilized zirconia (YSZ) can be employed as thermal barrier coatings (TBCs) on Ni-based super alloys in gas turbines and aircraft engines. The YSZ coatings have been fabricated by atmospheric plasma spraying or electron-beam physical vapor deposition. The increase in operation temperature of gas turbines demands another fabrication process to obtain high quality TBCs. Chemical vapor deposition (CVD) can be an alternative route to prepare TBCs due to excellent conformal coverage and columnar microstructure. This paper reviews the fabrication of YSZ films by conventional thermal CVD and plasma CVD intended for TBCs. A new laser CVD developed by our group with a high deposition rate of 660 μm h⁻¹ was also briefly introduced.     

Thermal barrier coatings produced by chemical vapor deposition

Yttria stabilized zirconia (YSZ) can be employed as thermal barrier coatings (TBCs) on Ni-based super alloys in gas turbines and aircraft engines. The YSZ coatings have been fabricated by atmospheric plasma spraying or electron-beam physical vapor deposition. The increase in operation temperature of gas turbines demands another fabrication process to obtain high quality TBCs. Chemical vapor deposition (CVD) can be an alternative route to prepare TBCs due to excellent conformal coverage and columnar microstructure. This paper reviews the fabrication of YSZ films by conventional thermal CVD and plasma CVD intended for TBCs. A new laser CVD developed by our group with a high deposition rate of 660 µμh^-1 was also briefly introduced.     

Laser CVD – Status und industrielles Potential für Faserbeschichtungen

Laser activated CVD can be applied in different ways: (i) wide area coating having the potential of continuously coating temperature sensitive substrates (parallel beam), (ii) coating on shaped parts, e. g. fibres, (iii) micro structuring/ patterning, e. g. for rapid prototyping or repair of wafers, (iv) build‐up of 3‐dimensional microstructures on substrates under for designing/making microsystems, (v) forming nano‐powders with narrow size distribution, e. g. for advanced ceramics. Evaluation of the industrial potential of the most prospective developments is underway. One of these areas being covered more in detail comprises high speed coating of fibers. The fibres are used for manufacturing damage‐tolerant fiber reinforced ceramic composites. Based on a industrial 6 kW cw‐CO2 laser, an atmospheric pressure laser CVD process has been established which performs continuous coating of fiber bundles. The laser CVD method is characterized by several significant advantages, among them deposition rates of typically > 1 μm/s, small volume cold‐wall reactors, and short residence time of the fibers in the deposition chamber, which avoids fiber degradation. As another feature favoring industrial application, the process can be performed at atmospheric pressure in an open reactor with a continuous air‐to‐air coiling of the fiber bundles. The prototype laser CVD reactor established at Fraunhofer Institute is equipped with in‐situ FTIR sensorics for process monitoring and chemistry control. Cost distribution analysis is used for making preliminary efficiency assessment of the innovative coating process.     

基于激光选区熔化成形Ni-Cu合金模板的Ni-Cu-石墨烯复合材料的制备

采用优化的SLM成形参数,用激光选区熔化(SLM)增材制造技术制备了三维Ni-Cu合金.使用三维Ni-Cu合金基底材料用化学气相沉积法(CVD)制备Ni-Cu合金/石墨烯复合材料,研究了 CVD法生长反应温度对石墨烯结构的影响并分析其原因.结果表明,石墨烯层的厚度随着反应温度的提高而减小.与未生长石墨烯的样品相比,在1...     

电感耦合等离子体CVD室温制备的硅薄膜的结构研究

用内置式单圈电感耦合等离子体化学气相沉积(ICP-CVD)方法在室温下制备Si薄膜.用傅里叶红外吸收光谱、喇曼光谱、原子力显微镜和分光椭圆偏振谱等测量分析表明,即使在室温下用ICP-CVD也获得了有纳米结晶相的Si薄膜,样品结构与源气体SiH4浓度密切相关.实验结果预示着在高电子密度的ICP-CVD过程中,活性原子集团的形成以及薄膜的生长机理与传统的等离子体CVD过程不同.     

Deposition Temperature Effect on the Structure and Optical Property of RF‐PACVD‐Derived Hydrogenated SiCNO Film

Amorphous hydrogenated silicon oxocarbonitride (SiCNO:H) films have been deposited by plasma‐assisted chemical vapour deposition (PACVD) using bis(trimethylsilyl)carbodiimide (BTSC) as a single source precursor in a argon (Ar) radio‐frequency plasma. In this work the SiCNO:H films deposited at different deposition temperatures were studied in terms of deposition rate, refractive index, surface roughness, microstructure, and chemical composition including bonding state. The results showed that a higher deposition temperature enhanced the formation of Si‐N bonds, and disfavoured the formation of N=C=N, Si‐NCN, C‐H and Si‐CH₃ bonds. A higher deposition temperature also decreased the deposition rate and increased the refractive index of the resulting SiCNO:H film. With increasing temperature a denser film was formed, indicating a change of the deposition mechanism, i.e., transformation from particle precipitation to heterogeneous surface reaction. Except for the coatings deposited at room temperature, the surface of the films was smooth with a roughness of around 4 nm at the centre in the range of 5 μm x 5 μm area. Moreover, the films contained 8 ～ 16 at.% oxygen bonded to Si, which originated from the remnant H₂O in the deposition chamber.     

Abscheidung von Hartstoffschichten des Typs (B,C,N) bei niedrigen Beschichtungstemperaturen im PACVD-Prozeß

Deposition of hard coatings type (B,C,N) at low coating temperatures by PACVD In this study the deposition of (B,C,N) layers by means of low temperature (250°C) pulsed DC plasma assisted CVD process was investigated using a metallo-organic compound as precursor being synthesized in a new way. It is shown that the deposition of (B,C,N) layers is possible with high hardness and adhesion in the investigated parameter range.     

Cold deposition of large-area amorphous hydrogenated silicon films by dielectric barrier discharge chemical vapor deposition

Amorphous hydrogenated silicon films were deposited on glass substrates at room temperature. This cold deposition process was operated in a dielectric barrier discharge CVD reactor with a fixed strip-shaped plasma matched with a moving substrate holder. The maximum film area was 300 × 600 mm². The film deposition rate as a function of applied peak voltage of DBD power was investigated under different hydrogen-diluted silane concentrations, and the film surface smoothness, continuity, and film/glass adherence were also studied. The maximum deposition rate was 12.2 Å/s, which was performed under the applied peak voltage of 16 kV and a hydrogen-diluted silane concentration of 50%. IR measurements reveal that the silane concentration plays a key role in determining the hydrogen-silicon bonding configurations. With increasing hydrogen-diluted silane concentration, the H-Si bonding configurations shift gradually from Si-H₃ to Si-H. The variation of photo/dark conductivity ratio and optical bandgap versus hydrogen-diluted silane concentration were investigated. The use of DBD-CVD for deposition of a-Si:H films offers certain advantages, such as colder substrate, faster film growth rate, and larger deposition area. However, the consumption of silane for the DBD-PECVD procedure is much greater than for the RF-PECVD process.     

AC Impedance Behaviour of Black Diamond Films

The first measurement of impedance on free-standing diamond films from 0.1 Hz to 10 MHz up to 300℃ were reported. A wide range of chemical vapour deposition (CVD) materials were investigated, but here we concentrate are well fitted to a RC parallel circuit model and the equivalent resistance and capacitance for the diamond films have been estimated using the Zview curve fitting. The results show only one single semicircle response at each temperature measured. It was found that the resistance decreases from 62 MΩ at room temperature to 4 kΩ at300℃, with an activation energy around 0.51 eV. The equivalent capacitance is maintained at the level of 100 pF up to 300℃ suggesting that the diamond grain boundaries are dominating the conduction. At 400℃, the impedance at low frequencies shows a linear tail, which can be explained that the AC polarization of diamond/Au interface occurs.     

Room Temperature Multiferroicity in Zn0.98Cu0.02O Film Prepared in N Plasma

Zn_0.98Cu_0.02O films have been prepared under different conditions by pulsed laser deposition. Ferromagnetism with saturate magnetization of about 7 emu/cm³ at 300 K has been observed in Zn_0.98Cu_0.02O film prepared in N plasma at room temperature. The concentration of oxygen vacancies was increased by N substituting O in N plasma, and the ferromagnetism originated from the aligned magnetic moments of more Cu ions mediated by oxygen vacancies. Furthermore, ferroelectricity has been confirmed by the observation of the electrical field dependent converse piezoelectric coefficient d ₃₃ loop at room temperature, indicating the potential multiferroic applications.