VLSI线宽的自动工艺控制

描述了光刻胶喷雾显影和搅拌显影中线宽加工的工艺线自动控制方法。所使用的设备也可用于工艺诊断,评价诸如光刻胶溶解速率或显影实际开始前的初始时间一类的光刻胶参数。讨论了这种方法对于光刻胶的全自动处理的意义。     

对胶体球光刻中单层胶体晶体曝光特性的研究

对胶体球光刻中单层胶体晶体(MCC)的曝光特性进行了研究。利用磁控溅射的方法在蓝宝石衬底上生长SiO2薄膜并旋涂光刻胶,通过固液界面自组装的方法在光刻胶上制备了单层胶体晶体。胶体球光刻利用单层胶体晶体作为微透镜阵列,通过紫外曝光的方法在光刻胶上制备微孔阵列。光刻胶上图形的周期性与胶体球的直径有关,并且大直径的胶体球的聚光性能要强于小直径胶体球,在曝光过程中随着曝光时间的增加,由于曝光量的增加以及光刻胶的漂白现象,光刻胶上微孔的尺寸也在增加。最后以曝光后的光刻胶为掩膜,将感应耦合等离子体刻蚀技术(ICP)以及湿法腐蚀相结合,制备出了图形化蓝宝石(PSS)衬底。     

SU-8胶光刻工艺参数优化研究

对基于SU-8胶的UV-LIGA技术进行了工艺优化,研究了光源波长和曝光时间对SU-8胶成型的影响。结果表明,光刻胶表面线宽变化随曝光时间增加先减少后增加,有一个极小值;侧壁角度先增加后减少,有一个极大值。通过优化光源波长、曝光时间以及显影时间三个主要工艺参数,可以获得侧壁角度为90.64°正角的300μm厚光刻胶微结构和侧壁角度为89.98°近似垂直的500μm厚光刻胶微结构。     

反应离子束刻蚀应用于光刻胶灰化技术研究

以AZl500光刻胶为例，将氧气作为工作气体的反应离子束刻蚀工艺用于光刻胶图形的灰化处理，以去除经紫外曝光-显影后光栅中的残余光刻胶。研究结果表明灰化速率有随束流密度呈线性增加的趋势。经过反应离子束刻蚀后，光栅槽底残余光刻胶被去除干净，同时线条的宽度变细，在一定程度上达到修正光刻胶光栅线条占空比的目的。用原子力显微镜检测，无光刻胶的K9基片表面在灰化工艺前后其粗糙度无明显变化。该工艺具有良好的可控性，解决了在厚基片上制作大口径衍射光学元件时残余光刻胶的去除问题。     

图形反转工艺用于金属层剥离的研究

研究了AZ-5214胶的正、负转型和形成适用于剥离技术的倒台面图形的工艺技术.用扫描电镜和台阶仪测试制作出的光刻胶断面呈倒台面,倾角约为60°,胶厚1.4μm.得到了优化的制作倒台面结构的光刻胶图形的工艺参数:匀胶转速4 000 r/min,前烘温度100 ℃,时间60 s,曝光时间0.3 s,反转烘温度110℃,时间90 s,泛曝光时间2 s,显影时间50 s.用金相显微镜测试了在优化工艺参数条件下制作的光刻胶图形的分辨率,同时对图形反转机理进行了讨论.     

双向对接曝光法复制光栅尺的研究

提出了光栅尺复制工艺中一种新的曝光方法———双向对接曝光法。根据光刻胶的曝光量与曝光时间成正比的关系,推导出光栅尺对接重合处任意一点的曝光量与其它各处的曝光量相同,由此提出采用双向对接曝光技术来解决曝光设备的导轨有效行程过短的问题。实验中,利用导轨有效行程为1.6m的曝光设备复制出测长为2.0 m的光栅尺,其最大线性误差为±17.0μm,完全满足使用要求。实验表明,采用双向对接曝光技术,曝光重合处的光栅线条完全满足测量要求,大幅度提高了曝光的有效行程,解决了曝光机导轨行程短的问题。     

光刻工艺中金属层划片槽幻影的产生和解决方案

在光刻工艺中的显影步骤,显影液在溶解光刻胶的过程中,不同区域光刻胶的溶解速度存在着明显的差异,使得晶圆表面的显影反应存有时间差别。这种反应速率上的差别在实际的生产过程中会产生一些缺陷。金属层划片槽的幻影现象是该类缺陷的一种表现形式。如何去控制这些缺陷的产生,对于提高生产线良率将会显得很重要。文章针对光刻工艺中无钛-氮化钛膜层覆盖的金属层划片槽出现的幻影,分析并提出了产生该现象的机制,与此同时提出了几种解决该现象的方案。     

光刻机镜头漏光对光刻工艺的影响

通过GaAs单片微波集成电路（MMIC）光刻工艺,试验得到不同掩模版透光区占空比下光刻机镜头的漏光率,分析了漏光率对曝光能量宽裕度以及光刻胶形状的影响。通过试验测量得出,掩模版透光区占空比的增加会导致曝光镜头的漏光率升高,进一步使得光刻工艺的能量宽裕度变小。同时,过高的漏光率会造成显影后图形的光刻胶损失,使光刻胶图形的对比度变差,从而严重影响GaAs MMIC光刻工艺的图形质量,造成器件性能退化,降低产品良率。     

亚微米尺寸金属电极的制备工艺

亚微米尺寸金属电极在高电子迁移率晶体管(HEMT)等半导体电子学器件中有重要应用,其制作是器件制作中的关键工艺,对器件性能有着重要影响。本文选择合适的涂胶旋转转速、烘烤温度(180℃)和时间,可以有效地减少电子束曝光后所产生的气泡。通过对聚甲基丙烯酸甲酯/聚二甲基戊二酰亚胺(PMMA/PMGI)双层胶进行电子束曝光和显影,确定了合适的曝光剂量为550 μC/cm2。通过调整显影液配比,并将显影时间控制在合理范围,获得了光滑完整的PMMA/PMGI双层光刻胶曝光图形。开发了双层光刻胶电子束曝光工艺,制备出宽度为200 nm的金属电极。     

ITO玻璃光刻工艺的研究

将光刻胶涂敷在带有ITO薄膜的玻璃表面上，利用紫外光对其进行光刻，通过金相显微镜观察刻蚀后的ITO表面形貌，定性地讨论各个工艺的不同对刻蚀后的电极的影响，得到最佳清洗工艺为：洗涤剂棉球擦洗，然后分别用丙酮、蒸馏水超声清洗两次，烘干；对于正性光刻胶RZJ-390PG，最佳实验效果的曝光时间为5min最佳显影时间为2min；最佳刻蚀时间为6min，为OLED得到精细阳极奠定了基础。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first