非对称耦合双量子点中激子的动力学行为

利用二能级近似理论分析了外场驱动下非对称耦合双量子点中激子的动力学行为,并给出了局域化的条件.分析发现:当外场振幅较小时,库仑相互作用扮演着重要角色,激子的动力学行为主要发生在低能级子空间,场强和频率之比是Bessel方程的根时,准能发生回避交叉,激子的局域化现象发生.随着外场振幅增大,激子解体,电子和空穴可以独立在量子点之间隧穿.借助于Floquet理论,进行了数值计算,计算结果与理论分析相符.     

非对称耦合量子点分子中激子的动力学行为

研究了外场驱动下非对称耦合量子点分子中激子的动力学行为.利用二能级理论分析了这个量子系统中激子的局域化现象,分析发现:激子的动力学行为主要发生在低能级子空间,它们构成了系统的两个局域态;当场强和频率是Bessel方程的根时,准能发生回避交叉,局域化现象发生,电子和空穴局域在初始状态,状态不随时间变化.数值计算也证明了这一点.同时还给出了电子和空穴的最大纠缠态随时间的演化.     

双量子点分子中激子的动态局域化行为

采用两点Hubbard模型和Floquet定理研究了在交变电场驱动下双量子点分子中激子的动力学行为.数值计算表明,系统准能随交变电场振幅的变化会出现一系列严格交叉和回避交叉.在某些弱场区的准能交叉点处,初始局域在一个量子点的电子和空穴依旧保持其初始局域状态.特别是随着两粒子之间的库仑相互作用的增强,这种动态局域化程度也得到加强.在强场区准能交叉点处,激子的动态局域化也能够建立起来.应用微扰理论求解Floquet方程,得到准能的解析解,可更清晰地了解系统的这种动态局域化特性     

双量子点分子中激子的动态局域化行为

采用两点Hubbard模型和Floquet定理研究了在交变电场驱动下双量子点分子中激子的动力学行为.数值计算表明,系统准能随交变电场振幅的变化会出现一系列严格交叉和回避交叉.在某些弱场区的准能交叉点处,初始局域在一个量子点的电子和空穴依旧保持其初始局域状态.特别是随着两粒子之间的库仑相互作用的增强,这种动态局域化程度也得到加强.在强场区准能交叉点处,激子的动态局域化也能够建立起来.应用微扰理论求解Floquet方程,得到准能的解析解,可更清晰地了解系统的这种动态局域化特性.     

在强交变电场驱动下双量子点分子中激子的动态行为

利用有效的两点Hubbard模型，研究了在高强度交变电场驱动下的双量子点分子中激子的动力学行为．利用微扰理论，求解Floquet方程，从而得到准能的解析解，表明准能随交变电场的变化出现一系列共振点．通过计算初始局域态随时间的演化，发现在这些共振点处，动态局域化能够建立起来，说明尽管驱动电场倾向于使电子和空穴在空间分离，但在合适的强外电场驱动与弱的量子点间的耦合作用下，初始局域态依旧可保持动态局域化．     

DC-AC驱动下耦合双量子点分子中激子的动力学行为

利用两点Hubburd模型和Floquet理论,用数值方法求解了含时Sch(o)dinger方程,给出了电子-空穴局域于初始态的几率在20个驱动周期内的最小值,研究了在直流和交流电场驱动下耦合双量子点分子中激子的动力学行为.结果表明,在弱场情况下,激子主要在局域态之间隧穿;在强场情况下,电子和空穴可以独立地在量子点间隧穿.驱动场倾向于使电子和空穴在空间分离,但在合适的条件下量子点中的电子和空穴在短时间内仍可以保持在初始局域态.直流电压破坏系统的动力学对称性,并对动态局域化产生影响.     

DC-AC驱动下耦合双量子点分子中激子的动力学行为

利用两点Hubburd模型和Floquet理论,用数值方法求解了含时Sch(o)dinger方程,给出了电子-空穴局域于初始态的几率在20个驱动周期内的最小值,研究了在直流和交流电场驱动下耦合双量子点分子中激子的动力学行为.结果表明,在弱场情况下,激子主要在局域态之间隧穿;在强场情况下,电子和空穴可以独立地在量子点间隧穿.驱动场倾向于使电子和空穴在空间分离,但在合适的条件下量子点中的电子和空穴在短时间内仍可以保持在初始局域态.直流电压破坏系统的动力学对称性,并对动态局域化产生影响.     

有机半导体直产生非本征光电导过程中激子行为的描述

限于金属电极，本文讨论了单重态激子Ｓ１在蒽界面的离解和三重态激子Ｔ１在蒽体内光去俘获的离解，并试图建立两个统一方程，其一用以描述Ｓ１离解过程中不同状态时的动力学特性，其二用以描述Ｔ１离解后不同光生载流子的输运特性。和文献［４］、［６］对比，此描述有机晶体中激子行为的理论方法要方便和实用。     

InP系量子阱相位调制器的理论设计

本文应用量子限制Ｓｔａｒｋ效应理论计算了ＩｎＰ系量子阱中激子的波函数及激子的能量．在此基础上，计算了不同电场条件下激子能量的红移，以及吸收系数的变化．然后，根据Ｋ－Ｋ关系计算了折射率的变化，得到了一定强度外电场条件下，折射率变化与波长、组份及阱宽的关系．按照我们的计算，折射率变化可达２.５４e－２．     

ZnSe/ZnCdSe多量子阱激子光学非线性

本文采用泵浦－探测技术研究了ＺｎＳｅ／ＺｎＣｄＳｅ多量子阱室温激子饱和吸收，并根据Ｋ－Ｋ关系计算得到５２１．６ｎｍ至５４４ｎｍ的光学非线性折射率的变化．观测到由折射率变化引起的ＺｎＳｅ／ＣｄＺｎＳｅ多量子阱光双稳器件的室温激子光双稳．根据ＺｎＳｅ／ＺｎＣｄＳｅ多量子阱的激子吸收谱及激子的非线性理论，归结其主要非线性机制为激子态的相空间填充和激子带展宽．     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.