共查询到20条相似文献,搜索用时 46 毫秒
1.
An air ambient operated organic complementary metal oxide semiconductor (CMOS) inverter has been fabricated on poly(ethylene terephthalate) (PET) using pentacene and N,N-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8) as active layers with a bilayer dielectric of tetratetracontane (TTC) and gelatin. The inverter performance is greatly improved by replacing the gelatin dielectric with the TTC/gelatin bilayer. With the TTC/gelatin bilayer, both types of organic field-effect transistor (OFET) show better pinch-off and current saturation in output characteristics and negligible hysteresis transfer characteristics. The organic CMOS inverter with the TTC/gelatin bilayer dielectric exhibits balanced motilities of 0.5 (pentacene) and 0.3 cm2 V−1 s−1 (PTCDI-C8) with low threshold voltages of −1 (pentacene) and 3 V (PTCDI-C8). A high static gain of 60 may be achieved with sharp inversion. 相似文献
2.
TIPs-pentacene OFETs were fabricated on a plastic substrate using polymer nanocomposite dielectric. The blend polymer P(VDF-TrFE)/PMMA (30 wt%) was used as polymer matrix and BaTiO3 nanoparticles modified by 3-glycidoxypropyltrimethoxysilane (GPTMS) were dispersed as ceramic fillers. The effects of different loadings of BaTiO3 on the surface morphology and electrical properties of dielectric films were investigated. The formulation of screen-printable dielectric ink of P(VDF-TrFE)/PMMA/BaTiO3/Silica (SII) was achieved by adding fumed silica as the viscosity modifier. TIPs-pentacene OFETs using SII as the gate dielectric features a mobility of 0.01 cm2/V s, and having a threshold voltage of −6 V. This screen-printable dielectric ink is promising for low operating-voltage fully-printed OFETs. 相似文献
3.
Z.R. Wang J.Z. Xin X.C. Ren X.L. Wang C.W. Leung S.Q. Shi A. Ruotolo P.K.L. Chan 《Organic Electronics》2012,13(7):1223-1228
We deposited amorphous Ba0.7Sr0.3TiO3 (BST) on silicon and plastic substrate under 110 °C by pulsed laser deposition (PLD) and use it as the dielectric of the organic transistor. Depends on the thickness of BST layer, the highest mobility of the devices can achieve 1.24 cm2 V?1 s?1 and 1.01 cm2 V?1 s?1 on the silicon and polyethylene naphthalate (PEN) substrate, respectively. We also studied the upward and downward bending tests on the transistors and the dielectric thin films. We found that the BST dielectric pentacene transistor can maintain the mobility at 0.5 cm2 V?1 s?1 or higher while the bending radius is around 3 mm in both upward and downward bending. Our finding demonstrates the potential application of PLD growth high-k dielectric in the large area organic electronics devices. 相似文献
4.
《Organic Electronics》2014,15(2):614-621
We demonstrate a new electrode gate based on graphene ink for complementary printed organic metal oxide semiconductor (CMOS) technology on flexible plastic substrates. The goal is to replace the standard silver electrode gate. Devices made with graphene were enhanced and showed a high field-effect mobility of 3 cm2 V−1 s−1 for P-type and 0.9 cm2 V−1 s−1 for the N-type semiconductors. The improvement is attributed to the increase of the electrical capacitance of the organic dielectric (CYTOP) due to the graphene layer. A seven-stage ring oscillator was made with high oscillation frequencies of 2.1 kHz at 40 V corresponding to a delay/gate value of 34 μs. These performances are promising for use of low cost printed electronic applications. 相似文献
5.
Youngjun Yun Christopher Pearson Duncan H. Cadd Richard L. Thompson Michael C. Petty 《Organic Electronics》2009,10(8):1596-1600
The electrical characteristics of pentacene organic thin-film transistors (OTFTs) using cross-linked poly(methyl methacrylate) (PMMA) as the gate dielectric are reported. Ultra-thin films of cross-linked PMMA could be obtained by spin-coating and subsequent irradiation using a 1.515 MeV 4He+ ion beam. The resulting film, with a thickness of 33 nm, possessed a low leakage current density of about 10?6 A cm?2 for fields up to 2 MV cm?1. OTFTs incorporating the cross-linked dielectric operated at relatively low voltages, <10 V, and exhibited a mobility of 1.1 cm2 V?1 s?1, a threshold voltage of ?1 V, a sub-threshold slope of 220 mV per decade and an on/off current ratio of 1.0 × 106. 相似文献
6.
Shree Prakash Tiwari Jungbae Kim Keith A. Knauer Do Kyung Hwang Lauren E. Polander Stephen Barlow Seth R. Marder Bernard Kippelen 《Organic Electronics》2012,13(7):1166-1170
We report on high-mobility top-gate organic field-effect transistors (OFETs) and complementary-like inverters fabricated with a solution-processed molecular bis(naphthalene diimide)-dithienopyrrole derivative as the channel semiconductor and a CYTOP/Al2O3 bilayer as the gate dielectric. The OFETs showed ambipolar behavior with average electron and hole mobility values of 1.2 and 0.01 cm2 V?1 s?1, respectively. Complementary-like inverters fabricated with two ambipolar OFETs showed hysteresis-free voltage transfer characteristics with negligible variations of switching threshold voltages and yielded very high DC gain values of more than 90 V/V (up to 122 V/V) at a supply voltage of 25 V. 相似文献
7.
Cerium doped V2O5 thin films were prepared by the sol−gel process. X-ray diffraction analysis revealed the phase transition from α-V2O5 orthorhombic to β-V2O5 tetragonal structure by annealing at 400 °C. The SEM and AFM images revealed that annealing temperature changed the surface morphology of the V2O5 films from fiber like wrinkle network to elongated sheets. Also, the particle shape was significantly influenced by Ce doping and a nanorod-like morphology was formed at 1.5 mol% Ce−doped V2O5. Power spectral density analysis indicated that surface roughness and fractal dimension of β−V2O5 increase by Ce doping. Optical measurement showed that the band gap narrowing (from 2.68 to 2.28 eV) occurred when the annealing temperature and dopant concentration increased. The variation of activation energy of the films was explained based on the small polaron hopping mechanism. The α−V2O5 film showed enhanced lithium−ion storage capacity compared to pristine β−V2O5 film and 1 mol% Ce−doped α−V2O5 thin film revealed the best ion storage capacity (Qa=207.19 mC/cm2, Imax=4.13 mA/cm2 at scan rate of ν=20 mV/s). 相似文献
8.
We present a combined charge transport and X-ray diffraction study of blends based on regioregular poly(3-hexylthiophene) (P3HT) and the polyfluorene co-polymer poly((9,9-dioctylfluorene)-2,7-diyl-alt-[4,7-bis(3-hexylthien-5-yl)-2,1,3-benzothiadiazole]-2′,2′′-diyl) (F8TBT) that are used in efficient all-polymer solar cells. Hole mobility is observed to increase by nearly two orders of magnitude from less than 10?7 cm2 V?1 s?1 for as spin-coated blends to 6 × 10?6 cm2 V?1 s?1 for blends annealed at 453 K at a field of 2.7 × 105 V/cm, but still significantly below the time-of-flight mobility of unblended P3HT of 1.7 × 10?4 cm2 V?1 s?1. The hole mobility of the blends also show a strong negative electric-field dependence, compared with a relatively flat electric-field dependence of unblended P3HT, suggestive of increased spatial disorder in the blends. X-ray diffraction measurements reveal that P3HT/F8TBT blends show a phase separation of the two components with a crystalline part attributed to P3HT and an amorphous part attributed to F8TBT. In as-spun and mildly annealed blends, the measured d-values and relative intensities of the 100, 200 and 300 P3HT peaks are noticeably different to unblended P3HT indicating an incorporation of F8TBT in P3HT crystallites that distorts the crystal structure. At higher anneal temperatures the blend d-values approach that of unblended P3HT suggesting a well separated blend with pure P3HT crystallites. P3HT crystallite size in the blend is also observed to increase with annealing from 3.3 to 6.1 nm, however similar changes in crystallite size are observed in unblended P3HT films with annealing. The lower mobility of P3HT/F8TBT blends is attributed not only to increased P3HT structural disorder in the blend, but also due to the blend morphology (increased spatial disorder). Changes in hole mobility with annealing are interpreted in terms of the need to form percolation networks of P3HT crystallites within an F8TBT matrix, with a possible contribution due to the intercalation of F8TBT in P3HT crystallites acting as defects in the as-prepared state. 相似文献
9.
Xuexia He Ritsuko Eguchi Hidenori Goto Eri Uesugi Shino Hamao Yasuhiro Takabayashi Yoshihiro Kubozono 《Organic Electronics》2013,14(6):1673-1682
Single crystal field-effect transistors (FETs) using [6]phenacene and [7]phenacene show p-channel FET characteristics. Field-effect mobilities, μs, as high as 5.6 × 10?1 cm2 V?1 s?1 in a [6]phenacene single crystal FET with an SiO2 gate dielectric and 2.3 cm2 V?1 s?1 in a [7]phenacene single crystal FET were recorded. In these FETs, 7,7,8,8-tetracyanoquinodimethane (TCNQ) was inserted between the Au source/drain electrodes and the single crystal to reduce hole-injection barrier heights. The μ reached 3.2 cm2 V?1 s?1 in the [7]phenacene single crystal FET with a Ta2O5 gate dielectric, and a low absolute threshold voltage |VTH| (6.3 V) was observed. Insertion of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in the interface produced very a high μ value (4.7–6.7 cm2 V?1 s?1) in the [7]phenacene single crystal FET, indicating that F4TCNQ was better for interface modification than TCNQ. A single crystal electric double-layer FET provided μ as high as 3.8 × 10?1 cm2 V?1 s?1 and |VTH| as low as 2.3 V. These results indicate that [6]phenacene and [7]phenacene are promising materials for future practical FET devices, and in addition we suggest that such devices might also provide a research tool to investigate a material’s potential as a superconductor and a possible new way to produce the superconducting state. 相似文献
10.
《Organic Electronics》2014,15(7):1299-1305
We investigated the effects of varying the properties of the interface between a semiconductor P3HT layer and a dielectric Cytop™ layer on the performances of the resulting transistor devices by comparing the mobilities of devices prepared with bottom gate/bottom contact or top gate/bottom contact architectures. The reduced channel roughness that arose from the thermal annealing step dramatically enhanced the field-effect mobility, yielding the highest mobility yet obtained for a top-gate transistor: 0.12 cm2/V s. High-performance OFETs may be fabricated by controlling the channel roughness and the properties of the interface between the semiconductor and the gate dielectric. 相似文献
11.
《Organic Electronics》2008,9(6):1069-1075
We have studied the effect of the chemical structure of dielectrics by evaporating pentacene onto a series of polyacrylates: poly(methylmethacrylate), poly(4-methoxyphenylacrylate), poly(phenylacrylate), and poly(2,2,2-trifluoroethyl methacrylate) in organic thin-film transistors (OTFTs). In top-contact OTFTs, the polyacrylates had a significant effect on field-effect mobilities ranging 0.093 ∼ 0.195 cm2 V−1 s−1. This variation neither correlated with the polymer surface morphology nor the observed pentacene crystallite size. This result implies that the PTFMA device generates the local electric field that accumulates holes and significantly shifts the threshold voltage and the turn-on voltage to −8.62 V and 3.5 V, respectively, in comparison with those of PMMA devices. 相似文献
12.
We have demonstrated high performance inkjet-printed n-channel thin-film transistors (TFTs) using C60 fullerene as a channel material. Highly uniform amorphous C60 thin-film patterns were fabricated on a solution-wettable polymer gate dielectric layer by inkjet-printing and vacuum drying process. Fabricated C60 TFTs shows great reproducibility and high performance; field-effect mobilities of 2.2–2.4 cm2 V?1 s?1, threshold voltages of 0.4–0.6 V, subthreshold slopes of 0.11–0.16 V dec?1 and current on/off ratio of 107–108 in a driving voltage of 5 V. This is due to the efficient annealing process that extracting the solvent residue and the formation of low trap-density gate dielectric surface. 相似文献
13.
We report the effect of an electron-donating unit on solid-state crystal orientation and charge transport in organic field-effect transistors (OFETs) with thienoisoindigo (TIIG)-based small molecules. End-capping of different electron-donor moieties [benzene (Bz), naphthalene (Np), and benzofuran (Bf)] onto TIIG (giving TIIG-Bz, TIIG-Np, and TIIG-Bf) is resulted in different electronic energy levels, solid-state morphologies and performance in OFETs. The 80 °C post-annealed TIIG-Np OFETs show the best device performance with a best hole mobility of 0.019 cm2 V−1 s−1 and threshold voltage of −8.6 ± 0.9 V using top gate/bottom contact geometry and a CYTOP gate dielectric. We further investigated the morphological microstructure of the TIIG-based small molecules by using grazing incidence wide angle X-ray scattering, atomic force microscopy and a polarized optical microscope. The electronic transport levels of the TIIG-based small molecules in thin-film states were investigated using ultraviolet photoelectron spectroscopy to examine the charge injection properties of the gold electrode. 相似文献
14.
《Organic Electronics》2014,15(4):920-925
Gelatin is a natural protein, which works well as the gate dielectric for N,N-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8) organic field-effect transistors (OFETs). An aqueous solution process was applied to form the gelatin gate dielectric on poly(ethylene terephthalate) (PET) by spin-coating and subsequent casting. The field-effect mobility in the saturation regime (μFE,sat) and the threshold voltage (VT) values of a typical 40 nm PTCDI-C8 OFET are (0.22 cm2 V−1 s−1, 55 V) in vacuum and (0.74 cm2 V−1 s−1, 2.6 V) in air ambient. The maximum voltage shift in hysteresis is also reduced from 10 V to 2 V when the operation environment for PTCDI-C8 OFETs is changed from vacuum to air ambient. Nevertheless, a slight reduction of electron mobility was found when the device was stressed in the air ambient. The change in the device performance has been attributed to the charged ions generation owing to water absorption in gelatin in air ambient. 相似文献
15.
《Organic Electronics》2014,15(4):954-960
The major ampullate (MA) silk collected from giant wood spiders Nephila pilipes consists of 12% glutamic acid (Glu) and 4% tyrosine (Tyr) acidic amino residues. The MA silk may act as a natural polyelectrolyte for organic field-effect transistors (OFETs). Pentacene and F16CuPc OFETs were fabricated with the MA silk thin film as the gate dielectric. The MA silk thin film with surface roughness of 4 nm and surface energy of 36.1 mJ/m2 was formed on glass using a hexafluoroisopropanol (HFIP) organic process. The MA silk gate dielectric in pentacene OFETs may improve the field-effect mobility (μFE,sat) value in the saturation regime from 0.11 in vacuum to 4.3 cm2 V−1 s−1 in air ambient at ca. 70% RH. The corresponding threshold voltage (VTH) value reduced from −6 V in vacuum to −0.5 V in air ambient. Similar to other polyelectrolytes, the changes of μFE,sat and VTH may be explained by the generation of electric double layers (EDLs) in the MA silk thin film in air ambient due to water absorption. 相似文献
16.
Kang-Jun Baeg Soon-Won Jung Dongyoon Khim Juhwan Kim Dong-Yu Kim Jae Bon Koo Jordan R. Quinn Antonio Facchetti In-Kyu You Yong-Young Noh 《Organic Electronics》2013,14(5):1407-1418
We report the development of high-performance inkjet-printed organic field-effect transistors (OFETs) and complementary circuits using high-k polymer dielectric blends comprising poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(methyl methacrylate) (PMMA) for high-speed and low-voltage operation. Inkjet-printed p-type polymer semiconductors containing alkyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and n-type P(NDI2OD-T2) OFETs showed high field-effect mobilities of 0.1–0.4 cm2 V?1 s?1 and low threshold voltages down to 5 V. These OFET properties were modified by changing the blend ratio of P(VDF-TrFE) and PMMA. The optimum blend – a 7:3 wt% mixture of P(VDF-TrFE) and PMMA – was successfully used to realize high-performance complementary inverters and ring oscillators (ROs). The complementary ROs operated at a supplied bias (VDD) of 5 V and showed an oscillation frequency (fosc) as high as ~80 kHz at VDD = 30 V. Furthermore, the fosc of the complementary ROs was significantly affected by a variety of fundamental parameters such as the electron and hole mobilities, channel width and length, capacitance of the gate dielectrics, VDD, and the overlap capacitance in the circuit configuration. 相似文献
17.
Lung-Kai Mao Jenn-Chang Hwang Ting-Hao Chang Chao-Ying Hsieh Li-Shiuan Tsai Yu-Lun Chueh Shawn S.H. Hsu Ping-Chiang Lyu Ta-Jo Liu 《Organic Electronics》2013,14(4):1170-1176
Gelatin is a natural protein in the field of food, pharmaceutical and tissue engineering, which works very well as the gate dielectric for pentacene organic thin-film transistors (OTFTs). An aqueous solution process has been applied to form a gelatin thin film on poly(ethylene terephthalate) (PET) or glass by spin-coating and subsequent casting. The device performance of pentacene OTFTs depend on the bloom number (molecular weight) of gelatin. The pentacene OTFT with 300 bloom gelatin as the gate dielectric in air ambient exhibits the best performance with an average field-effect mobility (μFE) value of ca. 16 cm2 V?1 s?1 in the saturation regime and a low threshold voltage of ?1 V. The high performance of the pentacene OTFT in air ambient is attributed to the water resided in gelatin. The crystal quality of pentacene is not the key factor for the high performance. 相似文献
18.
Na Ai Yan Zhou Yina Zheng Haibo Chen Jian Wang Jian Pei Yong Cao 《Organic Electronics》2013,14(4):1103-1108
The performance of the single organic submicrometer ribbon based photodetector has been improved by one order of magnitude by combining a better crystalline structure with proper surface engineering, such as coating a dielectric layer PMMA or PS between the substrate and the organic semiconductor. The photoconductivity gain is as much as 1.3 × 104, the responsivity is about 4372 A W?1 at the field of about 2 × 106 V m?1, and the highest on/off ratio reaches 104. The extremely high gain is attributed to the high mobility and the long photo carrier’s lifetime induced by the dielectric layer. 相似文献
19.
Room-temperature exposure of spin-coated poly(3-hexylthiophene) (P3HT) films to ortho-dichlorobenzene vapor increases the field-effect mobility of the P3HT organic thin-film transistors (OTFTs). The mobility increases moderately with unsaturated vapor exposure, owing to increased crystallinity of the P3HT films; on the other hand, the mobility increases abruptly with saturated vapor exposure, to 0.11 cm2/V s. The saturated vapor exposure causes the P3HT films to reflow, leaving in the active area approximately 2–3 P3HT monolayers whose molecular ordering is enhanced by the flow-generated shear against the gate dielectric. Although the reflowed OTFTs degrade in air much faster than do the non-reflowed OTFTs due to the susceptibility of the ultra-thin reflowed films, they become highly stable when encapsulated, obtaining a lifetime of more than 3000 h. 相似文献
20.
The electrical performance of triethylsilylethynyl anthradithiophene (TES-ADT) organic field-effect transistors (OFETs) was significantly affected by dielectric surface polarity controlled by grafting hexamethyldisilazane and dimethyl chlorosilane-terminated polystyrene (PS-Si(CH3)2Cl) to 300-nm-thick SiO2 dielectrics. On the untreated and treated SiO2 dielectrics, solvent–vapor annealed TES-ADT films contained millimeter-sized crystals with low grain boundaries (GBs). The operation and bias stability of OFETs containing similar crystalline structures of TES-ADT could be significantly increased with a decrease in dielectric surface polarity. Among dielectrics with similar capacitances (10.5–11 nF cm−2) and surface roughnesses (0.40–0.44 nm), the TES-ADT/PS-grafted dielectric interface contained the fewest trap sites and therefore the OFET produced using it had low-voltage operation and a charge-carrier mobility ∼1.32 cm2 V−1 s−1, on–off current ratio >106, threshold voltage ∼0 V, and long-term operation stability under negative bias stress. 相似文献