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1.
Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting(PLM).P type silicon wafers were implanted with 245 keV 126Te+ to a dose of 2×1015 ions/cm2,after a PLM process(248 nm,laser fluence of 0.30 and 0.35 J/cm2,1-5 pulses,duration 30 ns),an n+ type single crystalline tellurium supersaturated silicon layer with high carrier density(highest concentration 4.10×1019 cm-3,three orders of magnitude larger than the solid solution limit) was formed,it shows high broadband optical absorption from 400 to 2500 nm.Current-voltage measurements were performed on these diodes under dark and one standard sun(AM 1.5),and good rectification characteristics were observed.For present results,the samples with 4-5 pulses PLM are best. 相似文献
2.
We present a study of electrically active defects induced by ion implantation, for two dopants: arsenic and phosphorous. Our
analysis technique is Deep Level Transient Spectroscopy (D.L.T.S.). We have studied the generation of defects by direct implantation,
and indirect implantation, that is through an SiO2 layer. We follow the defect spectrum evolution for different doses (108 to 1014 atoms/cm2) and for different annealing temperatures (from room temperature up to 800° C). The comparison of our results with other
published ones allows us to improve the knowledge about the role of a protecting oxide layer, the influence of moderate thermal
annealing, and the effect of oxygen on deep centers produced by ion bombardment. 相似文献
3.
Young Min Kim Min-Kyu Jeong Ki-Heung Park Sang-Goo Jung Sung-Ho Bae Jong-Ho Lee 《Microelectronic Engineering》2009,86(10):2045-2048
Pulsed plasma-immersion ion implantation (PIII) or Pulsed PLAsma Doping (P2LAD) is known as a cost effective solution for ultra shallow junction formation due to its capability to implant doping species at ultra-low energies (0.05–5 keV), the advantages of P2LAD, high concentration and sharp distribution of the implanted species, also make this technique a good candidate to fabricate nanocrystals (NCs) within silicon dioxide (SiO2) layer. In this work, we report Ge NC fabrication within a SiO2 layer by using the pulsed PIII technique for the first time. GeH4 (4 sccm) and He (100 sccm) gases were flown to the plasma chamber, and a voltage of 4.5 kV was applied. After pulsed PIII process, furnace annealing was performed at 900 °C in nitrogen atmosphere for Ge agglomeration. By using such a process, we fabricated non-volatile memory devices and obtained relevant program/erase, retention, and cycling characteristics. 相似文献
4.
R.A. Minamisawa S. Habicht L. Knoll Q.T. Zhao D. Buca S. Mantl F. Khler R. Carius 《Solid-state electronics》2011,60(1):31-36
A systematic study of the impact of As+ ion implantation on strain relaxation and dopant activation of biaxially strained SSOI layers and uniaxially strained/unstrained NWs is presented. Three aspects are investigated: (i) the quality of the single crystalline layers and the NWs, (ii) strain relaxation of the implanted NWs and (iii) dopant activation of the layers and NWs. Optimization of the doping conditions resulted into very low contact resistivities of NiSi contacts on strained and unstrained 70 nm SOI layers and Si NWs. For NW contacts values as low as 1.2 × 10−8 Ω cm2 for an As+ dose of 2 × 1015 cm−2 were achieved, which is 20 times lower than for planar contacts made under the same implantation and annealing conditions. 相似文献
5.
为制作应变硅MOS器件,给出了一种制备具有高表面质量和超薄SiGe虚拟衬底应变Si材料的方法。通过在Si缓冲层与赝晶Si0.8Ge0.2之间设置低温硅(LT-Si)层,由于失配位错限制在LT-Si层中且抑制线位错穿透到Si0.8Ge0.2层,使表面粗糙度均方根值(RMS)为1.02nm,缺陷密度系106cm-2。又经过P+注入和快速热退火,使Si0.8Ge0.2层的应变弛豫度从85.09%增加到96.41%,且弛豫更加均匀。同时,RMS(1.1nm)改变较小,缺陷密度基本没变。由实验结果可见,采用LT-Si层与离子注入相结合的方法,可以制备出满足高性能器件要求的具有高弛豫度、超薄SiGe虚拟衬底的高质量应变Si材料。 相似文献
6.
Yang Hongdong Yu Qi Wang Xiangzhan Li Jingchun Ning Ning Yang Mohua 《半导体学报》2010,31(6):063001-063001-4
In order to fabricate strained-Si MOSFETs, we present a method to prepare strained-Si material with high-quality surface and ultra-thin SiGe virtual substrate. By sandwiching a low-temperature Si (LT-Si) layer between a Si buffer and a pseudomorphic Si0.08Ge0.2 layer, the surface roughness root mean square (RMS) is 1.02 nm and the defect density is 106 cm-2 owing to the misfit dislocations restricted to the LT-Si layer and the threading dislocations suppressed from penetrating into the Si0.08Ge0.2 layer. By employing P+ implantation and rapid thermal annealing,the strain relaxation degree of the Si0.08Ge0.2 layer increases from 85.09% to 96.41% and relaxation is more uniform. Meanwhile, the RMS (1.1 nm) varies a little and the defect density varies little. According to the results, the method of combining an LT-Si layer with ion implantation can prepare high-quality strained-Si material with a high relaxation degree and ultra-thin SiGe virtual substrate to meet the requirements of device applications. 相似文献
7.
G. Pensl F. Ciobanu D. Kirmse S. Reshanov M. Weidner H. Itoh 《Microelectronic Engineering》2006,83(1):146-149
Three examples are given, which show that ion implantation and electron irradiation can drastically modify the electrical properties of SiC and SiC-based MOS capacitors. (1) It is demonstrated that sulphur ions (S+) implanted into 6H-SiC act as double donors with ground states ranging from 310 to 635 meV below the conduction bandedge. (2) Co-implantation of nitrogen (N+) - and silicon (Si+) - ions into 4H-SiC leads to a strong deactivation of N donors. Additional experiments with electron (e−)-irradiated 4H-SiC samples (E(e−) = 200 keV) support the idea that this deactivation is due to the formation of an electrically neutral (Nx-VC, y)-complex. (3) Implantation of a surface-near Gaussian profile into n-type 4H-SiC followed by a standard oxidation process leads to a strong reduction of the density of interface traps Dit close to the conduction bandedge in n-type 4H-SiC/SiO2 MOS capacitors. 相似文献
8.
简要评述了用脉冲激光沉积技术制备类金刚石膜及金刚石薄膜的研究进展,总结了激光脉冲沉积制备薄膜的基本原理及其特点,分析了激光波长,能量,衬底温度等对薄膜质量的影响。 相似文献
9.
II类超晶格红外探测器一般通过台面结实现对红外辐射的探测,而通过离子注入实现横向PN结,一方面材料外延工艺简单,同时可以利用超晶格材料横向扩散长度远高于纵向的优势改善光生载流子的输运,且易于制作高密度平面型阵列。本文利用多种材料表征技术,研究了不同能量的Si离子注入以及退火前后对InAs/GaSb II类超晶格材料性能的影响。研究通过Si离子注入,外延材料由P型变为N型,超晶格材料中产生了垂直方向的拉伸应变,晶格常数变大,且失配度随着注入能量的增大而增大,注入前失配度为-0.012%,当注入能量到200 keV时,失配度达到0.072%,超晶格部分弛豫,弛豫程度为14%,而在300 °C 60 s退火后,超晶格恢复完全应变状态,且晶格常数变小,这种张应变是退火引起的Ga-In相互扩散以及Si替位导致的晶格收缩而造成的。 相似文献
10.
D. Y. C. Lie 《Journal of Electronic Materials》1998,27(5):377-401
The question of whether one can effectively dope or process epitaxial Si(100)/GeSi heterostructures by ion implantation for
the fabrication of Si-based heterojunction devices is experimentally investigated. Results that cover several differention
species (B, C, Si, P, Ge, As, BF2, and Sb), doses (1013 to 1016/cm2), implantation temperatures (room temperature to 150°C), as well as annealing techniques (steady-state and rapid thermal
annealing) are included in this minireview, and the data are compared with those available in the literature whenever possible.
Implantation-induced damage and strain and their annealing behavior for both strained and relaxed GeSi are measured and contrasted
with those in Si and Ge. The damage and strain generated in pseudomorphic GeSi by room-temperature implantation are considerably
higher than the values interpolated from those of Si and Ge. Implantation at slightly elevated substrate temperatures (e.g.,
100°C) can very effectively suppress the implantation-induced damage and strain in GeSi. The fractions of electrically active
dopants in both Si and GeSi are measured and compared for several doses and under various annealing conditions. Solid-phase
epitaxial regrowth of GeSi amorphized by implantation has also been studied and compared with regrowth in Si and Ge. For the
case of metastable epi-GeSi amorphized by implantation, the pseudomorphic strain in the regrown GeSi is always lost and the
layer contains a high density of defects, which is very different from the clean regrowth of Si(100). Solid-phase epitaxy,
however, facilitates the activation of dopants in both GeSi and Si, irrespective of the annealing techniques used. For metastable
GeSi films that are not amorphized by implantation, rapid thermal annealing is shown to outperform steady-state annealing
for the preservation of pseudomorphic strain and the activation of dopants. In general, defects generated by ion implantation
can enhance the strain relaxation process of strained GeSi during post-implantation annealing. The processing window that
is optimized for ion-implanted Si, therefore, has to be modified considerably for ion-implanted GeSi. However, with these
modifications, the mature ion implantation technology can be used to effectively dope and process Si/GeSi heterostructures
for device applications. Possible impacts of implantation-induced damage on the reliability of Si/GeSi heterojunction devices
are briefly discussed. 相似文献
11.
利用离子注入技术和氧气氛围高温退火制备了不同掺锌剂量的铌酸锂样品,并研究了锌离子浓度以及退火状态对铌酸锂晶体紫外和红外波段特性的影响。紫外波段,锌离子的注入使铌酸锂晶体的吸收边红移,退火后吸收边均与纯铌酸锂晶体的相同,锌离子的注入降低了铌酸锂晶体的透射率;红外波段,纯铌酸锂晶体分别在3486 cm-1、2851 cm-1和2917 cm-1处出现主次吸收峰,掺锌样品的主吸收峰位置与纯铌酸锂晶体相比发生微小的红移,X切向铌酸锂样品有明显的次吸收峰,而退火前Z切向铌酸锂样品的次吸收峰不明显,退火后吸收峰变锐利。锌离子的注入以及退火状态对铌酸锂晶体的透射率有影响,分别增强和减弱X切向和Z切向铌酸锂晶体的透射率。 相似文献
12.
铜磷合金粉末选区激光熔化成型研究 总被引:1,自引:0,他引:1
为了应用选区激光熔化技术直接制造金属零件,采用Dimetal 240快速成型机对平均直径为75μm的铜磷合金粉末进行了工艺试验。成型机配备200W半导体抽运Nd:YAG激光器,激光功率为103W~117W,内部扫描速度为0.25m/s~0.41m/s,边框扫描速度为0.15m/s,铺粉厚度为0.2mm。所得试样用扫描电镜和光学显微镜进行了微观组织分析。试样层问结合为冶金结合,致密度达到90%以上,层内组织为细长枝晶,层问组织为细小等轴晶。结果表明,通过设定合适的工艺参量,选区激光熔化技术可以直接成型金属零件。 相似文献
13.
A scanning Ar+ laser beam and a focused 30 keV Ga+ ion beam (FIB) have been used to transform an insulating (or high-resistivity semiconducting) noble metal oxide film to a conducting layer. Resulting from these experiments we propose a method for the fast and one-step metallization by laser or ion beam irradiation using platinum oxide thin films, prepared by magnetron sputtering under an argon/oxygen plasma. A maskless patterning of the platinum oxide film is possible by scanned laser and focused ion beam irradiation. Additionally to the scanning methods it is also possible to pattern the PtO2 film by broad ion beam irradiation using masks. For wiring we patterned conducting areas of up to 2 mm width and up to 15 mm length with a broad Ga+ ion beam (energy: 300 keV, dose: 5×1015 Ga+/cm2). The laser- and the ion-patterned large areas could be easily bonded with an Al wire to carry out four-point resistance measurements. 相似文献
14.
The propagation of optical beams in optical thin films grown by pulsed laser deposition is studied numerically in order to predict the influence of the film curvature on the performance of planar waveguide lasers. Several waveguiding structures are considered. The confinement of both the pump and the signal fields as well the overlap between the beams during propagation are examined. 相似文献
15.
An EPR study of defects induced in 6H-SiC by ion implantation 总被引:1,自引:0,他引:1
R. C. Barklie M. Collins B. Holm Y. Pacaud W. Skorupa 《Journal of Electronic Materials》1997,26(3):137-143
Crystalline (0001) plane wafers of n-type 6H-SiC have been implanted at room temperature with 200 keV Ge+ ions in the dose range 1012 to 1015 cm−2. Electron paramagnetic resonance (EPR) measurements have been made on these samples both before and after annealing them
at temperatures in the range room temperature to 1500°C. The as-implanted samples have a single isotropic and asymmetric line
EPR spectrum whose width, ΔBpp, increases with ion dose before falling when a buried continuous amorphous layer is produced. This increase is interpreted
in terms of the change in the relative intensity of a line with g = 2.0028 ± 0.0002, ΔBpp = 0.4 mT associated primarily with carbon dangling bonds in a-SiC and a line with g in the range 2.0033 to 2.0039 of uncertain
origin. The variation with anneal temperature of the populations of these defects is reported. 相似文献
16.
A process is described for creating local oxidation of silicon structure (LOCOS) structures in silicon carbide using enhanced
thermal oxidation by argon implantation. Thicker oxides were created in selective regions by using multiple energy argon implants
at a dose of 1 × 1015 cm−2 prior to thermal oxidation. Atomic force microscopy was used to analyze the fabricated LOCOS structure. 相似文献
17.
Amorphous carbon/p-Si junctions were fabricated at different temperatures using KrF excimer laser (λ = 248 nm, pulsed duration 20 ns). The current-voltage measurements of the devices showed diode characteristics. The value of various junction parameters such as ideality factor, barrier height, and series resistance were determined from forward bias I-V characteristics, Cheung method, and Norde’s function. There was a good agreement between the diodes parameters obtained from these methods. The ideality factor of ∼1.12 and barrier height of ∼0.37 eV were estimated using current-voltage characteristics for films grown at room temperature. 相似文献
18.
T. S. Anderson R. H. Magruder R. A. Zuhr J. E. Wittig 《Journal of Electronic Materials》1996,25(1):27-33
A series of nanometer dimension colloids in silica have been fabricated by sequential implantation of Ag and In, and a series
by sequential implantation of In and Cu. Energies of implantation were chosen using TRIM 89 to overlay the depth distributions
of the sequentially implanted ions. The implanted layers were characterized using Rutherford backscattering spectroscopy,
transmission electron microscopy, and optical spectroscopy. Nanometer dimension metal multicomponent colloids were formed.
The depth distribution, particle size, and optical response of the composites were found to depend strongly on the ion species
implanted and the relative ratio of the ion species. The optical responses are correlated with composition of the multicomponent
nanoclusters. 相似文献
19.
为了探索应用数字化反求设计结合选区激光熔化快速成型技术制作个性化牙冠牙桥的可行性,通过Laser-denta扫描系统测量牙列模型并 3 维重建其数字化外形,采用计算机辅助设计了牙冠牙桥。利用自主研发的选区激光熔化快速成型设备Dimetal-280进行了316L不锈钢粉末的正交实验工艺研究,获得优化参量,并用该参量加工设计了牙冠牙桥。结果表明,该方法能快速而精确地制造出形状复杂的个性化牙冠牙桥,且成型速度快、尺寸精度高、表面质量好、误差在±0.15mm以内,未经打磨表面粗糙度达到20μm;与传统加工方式相比,反求工程结合选区激光熔化快速成型的方法能快速而精确地制造出形状复杂的个性化金属牙冠牙桥,为其应用于口腔修复体的计算机辅助设计与制造提供了科学依据。 相似文献