共查询到16条相似文献,搜索用时 125 毫秒
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应用于手机等通信电子产品电源系统的电流模式控制DC/DC转换器芯片,要求具有高性能电流检测电路.设计了一个高精度的电流检测电路,基于华润上华CSMC 0.5μmBiCMOS工艺库,利用Cadence Spectre软件进行电路仿真,经仿真得知所设计的电路电流取样精度达到1 000:1,具有很高的采样精度.该电流检测电路... 相似文献
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本文提出了一种峰值电流模式控制的DC/DC转换器中斜率补偿电路.电路采用上斜坡补偿(补偿信号与采样信号叠加)方式.电路由采样电路、斜坡信号产生电路、叠加电路共同组成.采样电路采样电感电流信号,并生成一个带有采样信号信息的电流信号,输入到叠加电路,与斜坡信号产生电路生成的一个斜坡电流信号进行叠加,然后共同作于一个电阻之上,输出一个带有采样信号信息与斜坡补偿信息的电压信号,实现斜坡补偿.该信号与误差放大器的输出信号共同输入到PWM(脉冲宽度调制)比较器,两信号经比较后输出驱动信号,控制功率管的关断. 相似文献
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设计了一种用于DC/DC开关电源转换器的新型电流采样电路.常见的电流采样电路是通过检测采样管串联电阻上压降来得到采样电流,而该采样电路是通过检测开关管串联电感上压降来得到采样电流的.由于后者所需电阻更少,从而降低了采样电路的功耗,提高了效率;并且由于电感上压降对采样电流变化的灵敏度更高,有效地提高了采样的精度. 相似文献
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针对固定频率峰值电流模式PWM升压型DC—DC变换器,给出了一种结构简单、易于集成的电流环路补偿电路的设计方法。该电路的斜坡产生电路可对片内振荡器充放电电容上的电压作V/I转换。其所得到的斜坡电流具有稳定、斜率易于调节等特点;而电流采样电路主体采用SENSEFET结合优化的缓冲级和V/I转换电路,从而在提高采样精度的同时。还减小了损耗。整个电路可采用0.6μm 15V BCD工艺实现。通过Cadence Spectre进行的仿真结果表明,该电路可有效地抑制亚谐波振荡,采样精度达到77.9%,补偿斜率精度达到81.5%。 相似文献
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本文提出并实现了一种面向电流模式单片开关DC/DC转换器的低压高效片上电流采样电路.该电路利用功率管等效电阻电流检测技术和无需OP放大器的源极输入差分电压放大技术,使电路的应用范围可低达2.3V;-3dB带宽12MHz;在最大负载电流情况下的静态电流峰值仅19μA,比常规采用功率管镜像电流检测技术的静态电流峰值低1.5个量级左右.转换器基于0.5μm 2P3M Mixed Signal CMOS工艺设计制作.测试结果表明,电流检测电路的最大检测电流1.1A,转换器的输入最低电压2.3V,重负载转换效率高于93%. 相似文献
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采用电流模、电压模双环控制结构,结合峰值电流采样等关键技术,实现了一款功率集成的单片DC/DC变换器。设计的峰值电流采样、斜率补偿大大提高了系统的稳定性,提高了系统的快速瞬态响应能力;针对高压低压差线性稳压器(LDO)、电流采样等高压模块电路,通过采样齐纳二极管、高压NJFET代替高压厚栅MOSFET等的设计方法,从总体上降低高压器件的数量,在基于30 V BCD(Bipolar-CMOS-DMOS)工艺上,结合特殊器件的版图设计方法,制作出一款输入电压5.5~17 V,电压调整率小于10 mV,电流调整率小于25 mV,输出电流大于5 A,系统静态电流小于25 mA,最高工作效率为93%的高效单片DC/DC,其抗总剂量能力大于100 krad(Si)。 相似文献
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V.R.H. Lorentz H. Schwarzmann M. März A.J. Bauer H. Ryssel L. Frey 《International Journal of Electronics》2013,100(8):1025-1054
A novel CMOS integrated pulse-width modulation (PWM) control circuit allowing smooth transitions between conversion modes in full-bridge based bi-directional DC–DC converters operating at high switching frequencies is presented. The novel PWM control circuit is able to drive full-bridge based DC–DC converters performing step-down (i.e. buck) and step-up (i.e. boost) voltage conversion in both directions, thus allowing charging and discharging of the batteries in mobile systems. It provides smooth transitions between buck, buck-boost and boost modes. Additionally, the novel PWM control loop circuit uses a symmetrical triangular carrier, which overcomes the necessity of using an output phasing circuit previously required in PWM controllers based on sawtooth oscillators. The novel PWM control also enables to build bi-directional DC–DC converters operating at high switching frequencies (i.e. up to 10?MHz and above). Finally, the proposed PWM control circuit also allows the use of an average lossless inductor-current sensor for sensing the average load current even at very high switching frequencies. In this article, the proposed PWM control circuit is modelled and the integrated CMOS schematic is given. The corresponding theory is analysed and presented in detail. The circuit simulations realised in the Cadence Spectre software with a commercially available 0.18?µm mixed-signal CMOS technology from UMC are shown. The PWM control circuit was implemented in a monolithic integrated bi-directional CMOS DC–DC converter ASIC prototype. The fabricated prototype was tested experimentally and has shown performances in accordance with the theory. 相似文献
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V. R. H. Lorentz S. E. Berberich M. März A. J. Bauer H. Ryssel P. Poure F. Braun 《Analog Integrated Circuits and Signal Processing》2010,62(3):333-344
A novel average inductor current sensing circuit integrable in CMOS technologies is presented. It is designed for DC–DC converters
using buck, boost, or buck-boost topologies and operating in continuous conduction mode at high switching frequencies. The
average inductor current value is used by the DC–DC controllers to increase the light load power conversion efficiency (e.g.,
selection of the modulation mode, selection of the dynamic width of the transistors). It can also be used to perform the constant
current charging phase when charging lithium-ion batteries, or to simply detect overcurrent faults. The proposed average inductor
current sensing method is based on the lossless sensing MOSFET principle widely used in monolithic CMOS integrated DC–DC converters
for measuring the current flowing through the power switches. It consists of taking a sample of the current flowing through
the power switches at a specific point in time during each energizing and de-energizing cycle of the inductor. By controlling
precisely the point in time at which this sample is taken, the average inductor current value can be sensed directly. The
circuit simulations were done with the Cadence Spectre simulator. The improvements compared to the basic sensing MOSFET principle
are a lower power consumption because no high bandwidth amplifier is required, and less noise emission because the sensing
MOSFET is no more switched. Additionally, the novel average inductor current sensing circuit overcomes the low bandwidth limitation
previously associated with the sensing MOSFET principle, thus enabling it to be used in DC–DC converters operating at switching
frequencies up to 10 MHz and above. 相似文献
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应用于DC/DC稳压器的误差放大与逻辑控制电路 总被引:1,自引:0,他引:1
设计了一种应用于DC/DC集成稳压器的误差放大与逻辑控制电路。误差放大器的核心部分采用电流镜、折叠式共源共栅等结构,显著提高了增益、电源抑制比和共模抑制比;逻辑控制部分实现了对芯片工作模式的选择控制,并具有钳位功能。采用Sanyo Hspice模型进行仿真后表明,在很宽的频带范围内,误差放大器的差模增益大于80dB;逻辑控制电路工作时序正确可靠;各项性能指标满足设计要求。 相似文献
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Bor-Ren Lin 《International Journal of Electronics》2018,105(4):679-693
This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance. 相似文献