Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene

We explore the effect of high-κ dielectric seed layer and overlayer on carrier transport in epitaxial graphene. We introduce a novel seeding technique for depositing dielectrics by atomic layer deposition that utilizes direct deposition of high-κ seed layers and can lead to an increase in Hall mobility up to 70% from as-grown. Additionally, high-κ seeded dielectrics are shown to produce superior transistor performance relative to low-κ seeded dielectrics and the presence of heterogeneous seed/overlayer structures is found to be detrimental to transistor performance, reducing effective mobility by 30-40%. The direct deposition of high-purity oxide seed represents the first robust method for the deposition of uniform atomic layer deposited dielectrics on epitaxial graphene that improves carrier transport.     

Preparation and characterization of TaAlOx high-κ dielectric for metal-insulator-metal capacitor applications

Metal-insulator-metal (MIM) capacitors with excellent electrical properties have been fabricated using high-κ TaAlO_x-based dielectrics. TaAlO_x films having thickness of 11.5-26.0 nm, with equivalent oxide thickness (EOT) of ~ 2.3-5.3 nm were deposited on top of Au/SiO₂ (180 nm)/Si (100) structures by radio frequency magnetron co-sputtering of Ta₂O₅ and Al₂O₃ targets. The surface chemical states of the as-deposited TaAlO_x films were characterized by high-resolution X-ray photoelectron spectroscopy. The crystallinity of the TaAlO_x films for various post-deposition annealing treatments was characterized by grazing incident X-ray diffraction, which reveals that an amorphous phase is still retained for rapid thermal annealing up to 500 °C. Besides a high capacitance density (~ 5.4 to 6.6 fF/μm² at 1 kHz), a low value of voltage coefficients of capacitance and a stable temperature coefficient of capacitance have also been obtained in MIM capacitors with TaAlO_x films. Degradation phenomenon of TaAlO_x-based MIM capacitors under constant current stressing at 20 nA is found to be strongly dependent on dielectric thickness. It is shown that Al-incorporated Ta₂O₅ (TaAlO_x) films with high band gap and good thermal stability, low leakage current and good voltage linearity make it one of the most promising candidates for metal-insulator-metal capacitor applications.     

Fabrication and structure characterization of MnCO3/α-Fe2O3 nanocrystal heterostructures

Novel MnCO₃/α-Fe₂O₃ nanocrystal heterostructures, with MnCO₃ nanorods 5-10 nm in diameter and 15-50 nm in length, grown onto the surfaces of the α-Fe₂O₃ nanohexahedrons sized around 30-50 nm, were fabricated via a two-step solvothermal route. The coalescent planes of the heterostructure for the MnCO₃ nanorod and the α-Fe₂O₃ nanohexahedron were determined to be (01?4) and (110), respectively. The formation of the MnCO₃ nanorods from the Mn contained amorphous flakes was tracked by transmission electron microscopy observations at various reaction stages, which suggested a rolling-broken-growth process. Evidenced by the comparative experimental result, the α-Fe₂O₃ nanohexahedrons played an important role in inducing the nucleation and growth of the hexagonal MnCO₃ nanorods on their surfaces.     

Melt synthesis of oxide phosphors with K2NiF4 structures: CaLa1? x Eu x GaO4

In order to synthesize compounds of various Perovskite-related structures, we have utilized a novel “melt synthesis technique” for phosphors rather than the conventional solid state reaction techniques. The solid state reactions require multi-step processes of heating/cooling with intermediate grindings to make homogeneous samples. However, for the melt synthesis, it is possible to make a homogeneous sample in a single step within a short period of time (1–60 s) due to the liquid phase reaction in the molten samples, which were melted by strong light radiation in an imaging furnace. In this study, we have prepared a red-phosphor CaLaGaO₄:Eu³⁺ which has a perovskite—related layered K₂NiF₄ structure. Well-crystallized CaLa_1−x Eu _x GaO₄ samples with the K₂NiF₄ structure have been obtained up to x = 0.25, but there was the formation of an olivine phase when x = 0.5–1.0. The red emission at 618 nm increased with the increasing value of x up to x = 0.25.

---

单层二氧化铪（HfO2）薄膜的特性研究

利用电子束蒸发、离子束辅助沉积和离子束反应溅射三种制备方法制备了单层HfO2薄膜,对薄膜样品的晶体结构、光学特性、表面形貌以及吸收特性进行了研究。实验结果表明,薄膜特性与制备工艺有着密切的关系。电子束蒸发和离子束反应溅射制备的薄膜为非晶结构,而离子束辅助制备的薄膜为多晶结构。电子束蒸发制备的薄膜折射率较低,薄膜比较疏松,表面粗糙度较小,吸收相对较小,而离子束辅助以及离子束反应溅射制备的薄膜折射率较高,薄膜的结构比较致密,但表面粗糙度较大,吸收相对较大。不同制备工艺条件下薄膜的光学能隙范围为5.30～5.43eV,对应的吸收边的范围为228.4～234.0nm。     

高介电HfO2薄膜的制备及其结构和界面特性研究

报道了用低温等离子体直接氧化溅射金属铪膜的方法制备高介电HfO2薄膜.研究了退火温度及气氛对薄膜的结构和界面特性的影响.傅立叶变化红外测试结果表明界面的主要成分为SiO2,氧气气氛下的高温退火将导致界面SiO2的不可控制的生长.高纯的N2退火导致了界面层的分解,引起Si-O键的振动峰位的轻微移动.     

Sol–gel derived CaO–B2O3–SiO2 glass/CaSiO3 ceramic composites: processing and electrical properties

The CaO–B₂O₃–SiO₂ glass/CaSiO₃ ceramic (CBS/CS) composites were fabricated via sol–gel processing routes. Their densification behavior, structures and dielectric properties were investigated. The precursors of CBS glass and CS ceramic filler were firstly obtained via individual soft chemical route and then mixed together in various proportions. The results indicated that the structures of CBS/CS composites are characteristic of CS and CaB₂O₄ (CB) ceramic phases distributed in the matrix of glass phase at 800–950 °C. The CS ceramic phase not only acts as fillers, but nuclei for the crystallization of CBS glass as well such that the CS content exhibits an effect on the densification and dielectric properties of the composites. The CBS/CS composites with 10% CS sintered at 850 °C own dielectric properties of ε_r < 5 and tanδ = 6.4 × 10⁻⁴ at 1 MHz.     

Low voltage operated,sol–gel derived oxide thin film transistor based on high-k Gd2O3 gate dielectric

Low power-driven oxide thin film transistor (TFT) with a high-k gate dielectric is fabricated by a simple solution process. Sol–gel derived Gd₂O₃ film exhibits the dielectric constant in the range of 9–14 with breakdown field as high as 3.5 MV cm⁻¹. Zn–In–Sn–O based TFTs combined with a corresponding film demonstrate the readiness of solution processed high-k film as gate insulators. The resultant device exhibits the enhanced performance with the field-effect mobility of ∼1.9 cm² V⁻¹ s⁻¹, which is improved by a factor of 4.5 comparing with the conventional TFT based on a SiO₂ insulator, and the exceptionally low operating voltage of 6 V.     

1064 nm和532 nm激光对HfO2/SiO2非规整高反膜的激光诱导损伤研究

规整膜系是常见的薄膜结构,但往往无法满足理想激光传输效果和仪器使用效果,由此在满足激光系统及传输的窗口要求下,以规整膜系为设计基础优化得到非规整膜系,以获得良好的激光传输效果。采用电子束热蒸发法制备了HfO₂/SiO₂非规整高反射率薄膜,该薄膜的激光诱导损伤分别通过1064 nm、10 ns脉冲和532 nm、10 ns脉冲进行测试。损伤形貌分别使用尼康L150光学显微镜和ZYGO白光干涉仪进行表征。对两种波长下的激光诱导损伤阈值和损伤形貌进行比较。得到以下结果:两种波长下激光诱导损伤的典型损伤形貌在低能量脉冲辐照下表现出凹坑,周围有一定面积的烧蚀区域,在高能量脉冲辐照下表现出材料分层现象;两个波长对薄膜损伤测试过程中,1064 nm激光损伤阈值为5.64 J/cm²,532 nm激光损伤阈值为1.54 J/cm²,损伤通常起始于电场的峰值附近;不同波长下损伤形貌可能与缺陷吸收引起的热应力有关,1064 nm损伤测试中损伤形貌近似圆形,532 nm损伤形貌不规则。分析可得以下结论:该薄膜于1064 nm激光下的薄膜抗激光损伤能力优于532nm激光;1064 nm和532 nm激光下损伤形貌均为凹陷状损伤;1064 nm激光下薄膜界面场强值和峰值场强均高于532 nm激光。     

退火对sol-gel法生长的SiO2薄膜特性的影响

用正硅酸乙酯(ETOS),乙醇(EtOH),水以及盐酸以一定的比例混合配制溶胶(其中盐酸为催化剂).以普通浮法玻璃为衬底,用浸渍提拉法制备了厚度为100nm左右的SiO2薄膜.对其进行等温和等时退火,用台阶仪测定其厚度变化,给出经验拟合公式.研究了退火对透过率、折射率以及气孔率的影响,并做出比较详细的理论解释.     

Low-temperature sintered ZnNb2O6–CaTiO3 ceramics with near-zero τf

The phases, microstructure and microwave dielectric properties of ZnNb₂O₆–xCaTiO₃ ceramics with BaCu(B₂O₅) glass additions prepared by solid state reaction method were charactered by using X-ray diffraction, Scanning electron microscopy and Advantest network analyzer. The τ_f of ZnNb₂O₆ was modified to near 0 ppm °C⁻¹ by incorporating CaTiO₃ with opposite τ_f values on the basis of Lichtenecker empirical rule. The microwave dielectric properties of ZnNb₂O₆–xCaTiO₃ (x = 8.0 wt.%) samples with BaCu(B₂O₅) glass additives sintered in 900–1000 °C were investigated, and the results indicated that the behaviors of the ε_r and Q × f were associated with the sintering temperature and the amount of BaCu(B₂O₅) glass. The sintering temperature of the ceramics was reduced to 950 °C from 1175 °C. Addition of 5.0 wt.% BaCu(B₂O₅) glass in ZnNb₂O₆–xCaTiO₃ (x = 8.0 wt.%) ceramics sintered at 950 °C showed excellent dielectric properties of ε_r = 20.2, Q × f = 14,100 GHz (f = 7.3 GHz) and τ_f = 0 ppm °C⁻¹. Moreover, the material had a chemical compatibility with silver, which represented a promising candidate materials for low-temperature-co-fired ceramics applications.     

TiB2基RuO2+TiO2涂层的电催化性能

用磁控溅射法在钛基体表面溅射TiB2中间层,以此为基体用热分解法制备了(Ru,Ti)氧化物涂层钛电极,用SEM、XRD、电化学工作站等手段对样品的性能和结构进行了表征。结果表明,含TiB2中间层的钛阳极表面涂层具有非连续状裂纹结构,钛基体和氧化物涂层的界面呈现紧密结合的状态,其电催化析氯性能优于传统钛阳极。选用TiB2中间层作为催化电极的载体,可改善基体和氧化物涂层的结合,延缓涂层的脱落,可避免基体和涂层间生成TiO2电阻膜,延缓涂层的失效;加入TiB2中间层可降低内阻,改善电子的传输能力,降低析氯电位,提高电极的催化活性和节能降耗。     

Preparation and characterization of single-phase α-Fe2O3 nano-powders by Pechini sol-gel method

In this work, single-phase α-Fe₂O₃ nano-particles were first synthesized via Pechini sol-gel method using citric acid and polyethylene glycol-6000 as chelating agents. The structural coordination of as-prepared polymeric intermediates was investigated by FTIR analysis. Thermal behavior of the polymeric intermediates was studied by TG-DTG-DSC thermograms. The structure of the powders calcined at different temperatures was characterized by XRD and FESEM. The single-phase α-Fe₂O₃ nano-powders with uniform size were prepared when the polymeric intermediate calcined at 600 °C, and the lowest particle size was found to be 30 nm.     

TiO2光催化还原CO2研究进展

简要综述了近年来用于光催化还原CO2的Ti O2材料,包括单一Ti O2光催化材料、金属负载型Ti O2材料、半导体复合Ti O2光催化材料、有机光敏化剂修饰Ti O2光催化材料、Ti O2分子筛光催化材料及其他Ti O2光催化材料,总结了各种Ti O2材料光催化CO2的优势,并介绍了其相应的光催化反应机理。     

Dielectric properties and microstructure of TiO2 modified (ZnMg)TiO3 microwave ceramics with CaO–B2O3–SiO2

The low-fired (ZnMg)TiO₃–TiO₂ (ZMT–TiO₂) microwave ceramics using low melting point CaO–B₂O₃–SiO₂ as sintering aids have been developed. The influences of Mg substituted fraction on the crystal structure and microwave properties of (Zn_1−x Mg _x )TiO₃ were investigated. The result reveals that the sufficient amount of Mg (x ≥ 0.3) could inhibit the decomposition of ZnTiO₃ effectively, and form the single-phase (ZnMg)TiO₃ at higher sintering temperatures. Due to the compensating effect of rutile TiO₂ (τ_f = 450 ppm/°C), the temperature coefficient of resonant frequency (τ_f) for (Zn_0.65Mg_0.35)TiO₃–0.15TiO₂ with biphasic structure was adjusted to near zero value. Further, CaO–B₂O₃–SiO₂ addition could reduce the sintering temperature from 1150 to 950 °C, and significantly improve the sinterability and microwave properties of ZMT–TiO₂ ceramics, which is attributed to the formation of liquid phases during the sintering process observed by SEM. The (Zn_0.65Mg_0.35)TiO₃–0.15TiO₂ dielectrics with 1 wt% CaO–B₂O₃–SiO₂ sintered at 950 °C exhibited the optimal microwave properties: ε ≈ 25, Q × f ≈ 47,000 GHz, and τ_f ≈ ± 10 ppm/°C.     

超临界流体干燥法制备TiO2/ Fe2O3 和TiO2/ Fe2O3/ SiO2 复合纳米粒子及光催化性能

以TiCl₄ 、Fe (NO₃ )₃·9H₂O 和Na₂SiO₃19H₂O 为原料, 采用溶胶凝胶法结合超临界流体干燥法(SCFD)制备了纳米级TiO₂/ Fe₂O₃ 和TiO₂/ Fe₂O₃/ SiO₂ 复合光催化剂。以光催化降解苯酚对所得催化剂的催化活性进行了评价。结果表明, 纳米TiO₂/ Fe₂O₃ 复合粒子与单组分TiO₂ 比较, 复合粒子光催化活性高于单组分的TiO₂, 6h 苯酚降解率高达95.9 %。SiO₂ 的加入可以抑制纳米粒子粒径的长大和晶相的转变, 增强TiO₂ 纳米粒子的热稳定性。复合光催化剂中Fe₂O₃ 最佳掺入量为0.06 %, SiO₂ 最佳掺入量为10 %(摩尔分数) 。并用XRD、TEM 和FTIR 等手段进行了表征。TiO₂ 以锐钛矿型形式存在, SiO₂ 以无定性形式存在。比较了不同制备方法制得的TiO₂/ Fe₂O₃ 复合光催化剂, 得出超临界干燥法制备的光催化剂具有粒径小、比表面积大、分散性好、光催化活性高等特点。采用超临界流体干燥可直接得锐钛型纳米复合光催化剂。     

Al2O3/ZrO2/ZrSiO4复合材料的研究

在Al2O3颗粒补强锆英石陶瓷的研究基础上,探讨了Al2O3与ZrO2共同对锆英石陶瓷的协同补强增韧行为.制备的锆英石基复合材料的室温抗弯强度和断裂韧性分别可达383.31MPa、4.39 MPa·m12.采用XRD分析了复合材料的相组成,采用SEM观察复合材料的断面形貌.结果显示:ZrSiO4为主要晶相,另外还有少量Al2O3和ZrO2存在;第二种增强体ZrO2的最佳引入量为20％(质量分数);确定复合材料的强韧化是由Al2O3和ZrO2颗粒引起的裂纹偏转、微裂纹增韧与ZrO2颗粒引起的相变增韧共同作用而实现的,断裂方式主要为穿晶断裂.     

耐摩擦和高透过SiO2/TiO2/SiO2-TiO2增透膜的设计和制备

通过膜层设计理论设计出以K9玻璃为基底的兼具高透过率和高耐摩擦性的三层宽带增透膜,并通过溶胶凝胶技术成功制备了所设计的增透膜.以正硅酸乙酯(TEOS)和钛酸丁酯(TTIP)为前驱体、以盐酸为催化剂制得SiO2和TiO2溶胶.将两种溶胶按一定比例混合得到SiO2-TiO2复合溶胶.实验结果表明:三层增透膜在可见光区的平均透过率达到98.7%,与未镀膜的K9玻璃基片相比提高了7.1%.增透膜经较强机械摩擦后透过率基本保持不变,表明该增透膜具有优良的耐摩擦性.采用六甲基二硅氮烷(HMDS)对增透膜表面进行进一步的修饰,修饰后增透膜与水的接触角提高至94.3°,增透膜的疏水性及环境稳定性得到较大的提高.     

片状磁性纳米TiO2/SiO2/NiFe2O4制备及光催化性能

以锐钛矿磁性纳米TiO2/SiO2/NiFe2O4(TSN)为原料,采用水热法制备了片状磁性纳米TSN.利用XRD、TEM等技术对样品进行了表征.水热法处理后核壳结构的TSN部分转变为片状,催化剂磁性增强.以亚甲基兰溶液为模拟水样测试了样品的光催化性能,考察了催化剂加入量、反应时间、pH值等因素的影响.实验表明:片状磁性纳米TSN光催化性能明显优于粒状TSN.片状TSN具有良好的吸附性能,提高了光催化反应的初始速率.用于处理亚甲基兰废水时受pH值的影响较小,1小时的脱色率在90%以上.     

纳米LaFeO3-TiO2光催化还原CO2

采用柠檬酸络合-溶胶-凝胶法制备LaFeO3-TiO2纳米催化剂,并用TG-DTA、FT-IR、UV-Vis、XRD对其表征,研究煅烧温度、LaFeO3复合量对光催化催化还原CO2制甲醇性能影响及反应优化条件。结果表明,LaFeO3与TiO2的复合可以抑制TiO2的晶相转变,拓宽催化剂光响应范围,提高光催化性能。优化条件为:催化剂煅烧温度为800℃,复合质量分数为3%的LaFeO3,催化剂用量为2.0g/L,反应时间为7h,CO2流量为200mL/min,反应温度为90℃,反应液中NaOH和Na2SO3的浓度均为0.10mol/L,甲醇的产率达325.49μmol/g。并初步探讨了LaFeO3-TiO2光催化还原CO2机理。