The optical properties of Bi3.25La0.75Ti3O12 thin films with different thickness prepared by chemical solution deposition

Bi_3.25La_0.75Ti₃O₁₂(BiLT) thin films with different thickness were successfully deposited onto fused quartz by chemical solution deposition. X-ray diffraction analysis shows that BiLT thin films are polycrystalline with (0 0 2)-preferred orientation. The dispersion of refractive indices of the BiLT thin films was investigated by the optical transmittance spectrum. The optical band gap energy was estimated from the graph of (hνα)² versus hν. The results show that the refractive index and band-gap energy of the BiLT thin films decrease with the films thickness.     

Comparative study of physical properties of vapor chopped and nonchopped Al2O3 thin films

Aluminium oxide being environmentally stable and having high transmittance is an interesting material for optoelectronics devices. Aluminium oxide thin films have been successfully deposited by hot water oxidation of vacuum evaporated aluminium thin films. The surface morphology, surface roughness, optical transmission, band gap, refractive index and intrinsic stress of Al₂O₃ thin films were studied. The cost effective vapor chopping technique was used. It was observed that, optical transmittance of vapor chopped Al₂O₃ thin film showed higher transmittance than the nonchopped film. The optical band gap of vapor chopped thin film was higher than the nonchopped Al₂O₃, whereas surface roughness and refractive index were lower due to vapor chopping.     

Structural and optical characterizations of chemically deposited cadmium selenide thin films

Synthesis of cadmium selenide thin films by CBD method has been presented. The deposited film samples were subjected to XRD, SEM, UV-vis-NIR and TEP characterization. X-ray diffraction analysis showed that CdSe film sample crystallized in zinc blende or cubic phase structure. SEM studies reveal that the grains are spherical in shape and uniformly distributed all over the surface of the substrates. The optical band gap energy of as deposited film sample was found to be in the order of 1.8 eV. The electrical conductivity of the film sample was found to be 10⁻⁶ (Ω cm)⁻¹ with n-type of conduction mechanism.     

Optical and structural characteristics of ZnO thin films grown by rf magnetron sputtering

Nanostructured ZnO thin films on Pyrex glass substrates were deposited by rf magnetron sputtering at different substrate temperatures. Structural features and surface morphology were studied by X-ray diffraction and atomic force microscopy analyses. Films were found to be transparent in the visible range above 400 nm, having transparency above 90%. Sharp ultraviolet absorption edges around 370 nm were used to extract the optical band gap for samples of different particle sizes. Optical band gap energy for the films varied from 3.24 to 3.32 eV and the electronic transition was of the direct in nature. A correlation of the band gap of nanocrystalline ZnO films with particle size and strain was discussed. Photoluminescence emission in UV range, which is due to near band edge emission is more intense in comparison with the green band emission (due to defect state) was observed in all samples, indicating a good optical quality of the deposited films.     

Some studies on successive ionic layer adsorption and reaction (SILAR) grown indium sulphide thin films

Indium sulphide (In₂S₃) thin films were grown on amorphous glass substrate by the successive ionic layer adsorption and reaction (SILAR) method. X-ray diffraction, optical absorption, scanning electron microscopy (SEM) and Rutherford back scattering (RBS) were applied to study the structural, optical, surface morphological and compositional properties of the indium sulphide thin films. Utilization of triethanolamine and hydrazine hydrate complexed indium sulphate and sodium sulphide as precursors resulted in nanocrystalline In₂S₃ thin film. The optical band gap was found to be 2.7 eV. The film appeared to be smooth and homogeneous from SEM study.     

Influence of calcination ambient and film thickness on the optical and structural properties of sol-gel TiO2 thin films

Influence of both calcination ambient and film thickness on the optical and structural properties of sol-gel derived TiO₂ thin films have been studied. X-ray diffraction results show that prepared films are in an anatase form of TiO₂. Films calcined in argon or in low vacuum (∼2 × 10⁻¹ mbar) are found to be smaller in crystallite size, more transparent at low wavelength region of ∼300-450 nm, denser, have higher refractive index and band gap energy compared to air-calcined films. Scanning electron microscopic study reveals that surfaces of TiO₂ films calcined in argon or in low vacuum are formed by densely packed nano-sized particulates. Presence of voids and signs of agglomeration can be seen clearly in the surface microstructure of air-calcined films. In the thickness range ∼200-300 nm, band gap energy and crystallite size of TiO₂ films remain practically unaffected with film thickness but refractive index of thinner film is found to be marginally higher than that of thicker film. In this work, it has been shown that apart from temperature and soaking time, partial pressure of oxygen of the ambient is also an important parameter by which crystallite size, microstructure and optical properties of the TiO₂ films may be tailored during calcination period.     

Influence of substrate temperature on the physical properties of thermally evaporated nanocrystalline bismuth sulfide thin films

Nanocrystalline bismuth sulfide thin films were deposited on glass substrate by thermal evaporation technique using the solvothermally synthesized nanometer-sized bismuth sulfide powder as the source material. X-ray diffraction (XRD) analysis revealed that the films are polycrystalline in nature with orthorhombic structure. The crystallinity of the thin films improved with substrate temperature, and the estimated crystallite size are in the nanometer regime. Scanning electron microscope (SEM) analysis showed homogenous distribution of grains with well defined grain boundaries. The optical transmittance of the nanocrystalline bismuth sulfide thin films increases with the increase in substrate temperature, and the optical transition was found to be direct and allowed. The estimated optical band gap energy was found to decrease with the increase in substrate temperature. The electrical resistivity of the bismuth sulfide thin films is of the order of 10⁻⁴ Ω-cm and exhibits semiconductor nature. Experimental results demonstrate that the structural, optical and electrical properties of bismuth sulfide thin films have strong dependence on the substrate temperature.     

Preparation and characterisation of thickness dependent nano-structured ZnS thin films by sol–gel technique

Zinc sulfide (ZnS) thin films of different thickness were coated on glass substrates by the sol–gel dip-coating technique. Thickness dependent structural and optical properties of the films were studied in detail. X-ray diffraction (XRD) analysis indicated that the films had mixture of cubic (β) and hexagonal (α) phases with cubic (β) phase being predominant. Scanning electron microscope (SEM) showed that the film surfaces were smooth and crack free. Energy dispersive X-ray (EDX) measurement showed no impurity in the ZnS compound with elemental concentration of Zn/S being 50.38/49.62. Optical measurements showed that optical transmittance of the films were decreased in the visible range as the film thickness increased and band gap of the thin films were estimated to be about 3.61, 3.56, and 3.39?eV for the films with thickness of 100, 220, and 360?nm, respectively. Reactive indices and extinction coefficients of the films were measured by Spectroscopic Ellipsometer. Both the refractive index (n) and extinction coefficient (k) of the films were increased as the film thickness decreased. Electrical measurements showed that the resistivity of the films were decreased as the substrate temperature and film thickness increased.     

Optical and photoconductivity properties of ZnO thin films grown by pulsed filtered cathodic vacuum arc deposition

High quality transparent conductive ZnO thin films with various thicknesses were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system on glass substrates at room temperature.The high quality of the ZnO thin films was verified by X-ray diffraction and optical measurements. XRD analysis revealed that all films had a strong ZnO (200) peak, indicating c-axis orientation. The ZnO thin films are very transparent (92%) in the near vis regions. For the ZnO thin films deposited at a pressure of 0.086 Pa (6.5 × 10⁻⁴ Torr) optical energy band gap decreased from 3.21 eV to 3.19 eV with increasing the thickness. Urbach tail energy also decreased as the film thickness increased.Spectral dependence of the photoconductivity was obtained from measurements of the samples deposited at various thicknesses. Photoconductivities were observed at energies lower than energy gap which indicates the existence of energy states in the forbidden gap. Photoconductivities of ZnO thin films increase with energy of the light and reach its maximum value at around 2.32 eV. Above this value surface recombination becomes dominant process and reduces the photocurrent. The photoconductivity increases with decreasing the film thickness.     

Transparent conducting properties of Ni doped zinc oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer

Undoped and Ni doped zinc oxide (Ni–ZnO) thin films were prepared by a facile spray pyrolysis technique using perfume atomizer from aqueous solution of anhydrous zinc acetate (Zn(CH₃COOH)₂ and hexahydrated nickel chloride (NiCl₂·6H₂O) as sources of zinc and nickel, respectively. The films were deposited onto the amorphous glass substrates kept at (450 °C). The effect of the [Ni]/[Zn] ratio on the structural, morphological, optical and electrical properties of Ni doped ZnO thin film was studied. It was found from X-ray diffraction (XRD) analysis that both the undoped and Ni doped ZnO films were crystallized in the hexagonal structure with a preferred orientation of the crystallites along the [002] direction perpendicular to the substrate. The scanning electron microscopy (SEM) images showed a relatively dense surface structure composed of crystallites in the spherical form whose average size decreases when the [Ni]/[Zn] ratio increases. The optical study showed that all the films were highly transparent. The optical transmittance in the visible region varied between 75 and 85%, depending on the dopant concentrations. The variation of the band gap versus the [Ni]/[Zn] ratio showed that the energy gap decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02 and then increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. The films obtained with the [Ni]/[Zn] ratio = 0.02 showed minimum resistivity of 2 × 10⁻³ Ω cm at room temperature.     

Microstructural properties of electrochemically synthesized ZnSe thin films

In this study, we report the electrosynthesis of zinc selenide (ZnSe) thin films on indium-doped tin oxide-coated glass substrates. The deposited ZnSe thin films have been characterized for structural (X-ray diffraction), surface morphological (scanning electron microscopy), compositional (energy dispersive analysis by X-rays), photo luminescence property, and optical absorption analysis. Formation of cubic structure with preferential orientation along the (111) plane was confirmed from structural analysis. In addition, the influence of the deposition potential on the microstructural properties of ZnSe is plausibly explained. The optical properties of ZnSe thin films are estimated using the transmission spectrum in the range of 400–1200 nm. The optical band gap energy of ZnSe thin films was found to be in the range between 2.52 and 2.61 eV. Photoluminescence spectra were observed at blue shifted band edge peak. The morphological studies depict that the spherical and cuboid shaped grains are distributed evenly over the entire surface of the film. The sizes of the grains are found to be in the range between 150 and 200 nm. The ZnSe thin film stoichiometric composition was observed at optimized deposition condition.     

Optical properties of pyrene doped polymer thin films

Thin films of pyrene in polystyrene matrix have been prepared by spin coating technique. The concentration of polystyrene is kept constant to 1 wt.% while that of pyrene dopant varied in the range 2.30×10⁻⁴-2.30×10⁻¹ wt.%. Thickness of the films was found to depend upon concentration of pyrene and varies from 90 to 782 nm. The results of X-ray diffraction analysis reveal the crystalline nature of the films. The optical properties were studied by absorption, excitation and fluorescence spectroscopy. The band gap energy of pyrene in polymer films was calculated from absorption results. A transition from monomer to excimer is observed with thickness variation of the films. The structured part of the spectrum is assigned to the monomer emission while the broad emission band is attributed to well known pyrene excimer-like emission.     

Ammonia-free chemical bath deposition of nanocrystalline ZnS thin film buffer layer for solar cells

In this work, we prepared zinc sulfide thin films on glass substrates by ammonia-free chemical bath deposition method using thioacetamide as the sulfide source and Ethylene Diamine Tetra Acetic Acid disodium salt as the complexing agent in a solution of pH = 6.0. Thin films of ZnS with different thicknesses of 18–450 nm were prepared. The effect of film thickness and annealing temperature in atmospheric air, on optical properties, band gap energy and grain size of nanocrystals were studied. The X-ray diffraction analysis showed a cubic zinc blend structure and a diameter of about 2–5 nm for ZnS nanocrystals. The Fourier Transform Infrared spectrum of films revealed no peaks due to impurities. The as-deposited ZnS films had more than 70% transmittance in the visible region. The direct band gap of as-deposited films ranged from 3.68 to 3.78 eV and those of annealed films varied from 3.60 to 3.70 eV.     

CdSe thin films: morphological, optoelectronic and photoelectrochemical studies

Polycrystalline cadmium selenide (CdSe) thin films have been synthesized at room temperature by using chemical bath deposition method. The synthesized films were characterized by using X-ray diffraction (XRD), optical absorbance, electrical conductivity, scanning electron microscope, energy dispersive X-ray analysis, photoluminescence and photoelectrochemical (PEC) techniques. The film of 0.84 μm thickness, deposited on glass substrate showed uniform spherical morphology with an optical band gap of 1.99 eV. The XRD analysis confirmed presence of cubic structure. Scanning electron micrograph shows a typical spherical ball like morphology with large surface area, which is useful for absorption of large solar radiation. The conductivity measurements showed n type semiconducting nature of the film. A PEC cell device fabricated using ‘as deposited’ CdSe film as anode showed a stable conversion efficiency of 0.7 %.     

Room temperature deposition of ZnSe thin films by successive ionic layer adsorption and reaction (SILAR) method

The zinc selenide (ZnSe) thin films are deposited onto glass substrate using relatively simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method. The films are deposited using zinc acetate sodium selenosulphate precursors. The concentration, pH, immersion and rinsing times and number of immersion cycles have been optimized to obtain good quality ZnSe thin films. The X-ray diffraction (XRD) study and scanning electron microscopy (SEM) studies reveals nanocrystalline nature alongwith some amorphous phase present in ZnSe thin films. Energy dispersive X-ray (EDAX) analysis shows that the films are Se deficient. From optical absorption data, the optical band gap ‘E_g’ for as-deposited thin film was found to be 2.8 eV and electrical resistivity in the order of 10⁷ Ω cm.     

Analysis of the shape of spectral dependence of absorption coefficient and stationary photoconductivity spectral response in nanocrystalline bismuth(III) sulfide thin films

Some aspects regarding the optical and photoelectrical properties of bismuth(III) sulfide nanocrystals deposited in thin film form were studied. The influence of electrostatic interaction between photogenerated charge carriers on the shape of the spectral dependence of absorption coefficient for as-deposited and thermally treated nanocrystalline Bi₂S₃ thin films was investigated. The experimentally obtained spectral dependencies of the optical absorption coefficient were analyzed using the models of Elliott and Toyozawa. It was shown that the sub-band gap optical absorption of the studied films is of exponential type. A modified Urbach rule function was employed to calculate the relevant parameters which determine the value of critical energy at which a transition between the two main absorption regimes occurs in studied semiconductor. Experimentally obtained changes of Urbach energies (i.e. tailing parameters) upon thermal treatment of the films were explained in terms of the differences in the degree of structural disorder of the as-deposited and annealed films according to the model of Cody. The experimental optical absorption data were also used to model the photoconductivity spectral response of thermally annealed films using various approaches.     

Electrodeposition of As2Se3 thin films

Semiconducting As₂Se₃ thin films have been prepared from an aqueous bath at room temperature onto stainless steel and fluorine-doped tin oxide (F.T.O.)-coated glass substrates using an electrodeposition technique. It has been found that As₂O₃ and SeO₂ in the volumetric proportion as 4:6 and their equimolar solutions of 0.075 M concentration forms good quality films of As₂Se₃. The films are annealed in a nitrogen atmosphere at temperature of 200 °C for 2 h. The films are characterised by scanning electron microscopy, X-ray diffraction and optical absorption techniques. Studies reveal that asdeposited and annealed thin films are polycrystalline in nature. The optical band gap has been found to be 2.15 eV for the above-mentioned composition and concentration of the film.     

Microstructural,optical and electrical properties of various time annealed spin coated MgO thin films

In the present study, we have reported on the effect of annealing time variations for spin coated magnesium oxide (MgO) thin films. The various time annealed MgO thin films structural, surface morphological, compositional, electrical and optical absorption properties were studied by X-ray diffraction, scanning electron microscopy, energy dispersive analysis by X-rays, I–V studies and UV–vis spectroscopy, respectively. The cubic structure formation with preferential orientation along the (200) plane was confirmed from structural analysis. In addition, the influence of the annealing on the microstructural properties of MgO was plausibly explained. The optical properties of MgO thin films were estimated using the transmission spectrum in the range of 400–800 nm. The optical band gap energy of MgO thin films was found to be in the range between 3.81 and 3.93 eV. The morphological studies depicted that the spherical and ellipsoid shaped grains were distributed evenly over the entire surface of the film. The sizes of the grains are found to be in the range between 200 and 250 nm. The composition analysis was performed by EDX for various temperatures annealed MgO thin films.     

Structural, electrical and optical studies of SILAR deposited cadmium oxide thin films: Annealing effect

Successive ionic layer adsorption and reaction (SILAR) method has been successfully employed for the deposition of cadmium oxide (CdO) thin films. The films were annealed at 623 K for 2 h in an air and changes in the structural, electrical and optical properties were studied. From the X-ray diffraction patterns, it was found that after annealing, H₂O vapors from as-deposited Cd(O₂)_0.88(OH)_0.24 were removed and pure cubic cadmium oxide was obtained. The as-deposited film consists of nanocrystalline grains of average diameter about 20-30 nm with uniform coverage of the substrate surface, whereas for the annealed film randomly oriented morphology with slight increase in the crystallite size has been observed. The electrical resistivity showed the semiconducting nature with room temperature electrical resistivity decreased from 10⁻² to 10⁻³ Ω cm after annealing. The decrease in the band gap energy from 3.3 to 2.7 eV was observed after the annealing.     

Thickness dependence of structural and optical properties of indium tin oxide nanofiber thin films prepared by electron beam evaporation onto quartz substrates

Indium tin oxide (ITO) thin films, produced by electron beam evaporation technique onto quartz substrates maintained at room temperature, are grown as nanofibers. The dependence of structural and optical properties of ITO thin films on the film thickness (99-662 nm) has been reported. The crystal structure and morphology of the films are investigated by X-ray diffraction and scanning electron microscope techniques, respectively. The particle size is found to increase with increasing film thickness without changing the preferred orientation along (2 2 2) direction. The optical properties of the films are investigated in terms of the measurements of the transmittance and reflectance determined at the normal incidence of the light in the wavelength range (250-2500 nm). The absorption coefficient and refractive index are calculated and the related optical parameters are evaluated. The optical band gap is found to decrease with the increase of the film thickness, whereas the refractive index is found to increase. The optical dielectric constant and the ratio of the free carrier concentration to its effective mass are estimated for the films.