Influence of cobalt phase on thermal shock resistance of Al2O3-TiC composites evaluated by indentation technique

Cobalt-coated Al₂O₃ and TiC powders were prepared using an electroless method to improve resistance to thermal shock. The mixture of cobalt-coated Al₂O₃ and TiC powders (about 70 wt.% Al₂O₃-Co + 30 wt.% TiC-Co) was hot-pressed into an Al₂O₃-TiC-Co composite. The thermal shock properties of the composite were evaluated by indentation technique and compared with the traditional Al₂O₃-TiC composite. The composites containing 3.96 vol.% cobalt exhibited better resistance to crack propagation, cyclic thermal shock and higher critical temperature difference (ΔT_c). The calculation of thermal shock resistance parameters (R parameters) shows that the incorporation of cobalt improves the resistance to thermal shock fracture and thermal shock damage. The thermal physic parameters are changed very little but the flexure strength and fracture toughness of the composites are improved greatly by introducing cobalt into Al₂O₃-TiC (AT) composites. The better thermal shock resistance of the composites should be attributed to the higher flexure strength and fracture toughness.     

Characterization and dielectric behavior of CuO-doped ZnTa2O6 ceramics at microwave frequency

The effects of CuO addition on the microstructures and microwave dielectric properties of ZnTa₂O₆ ceramics were investigated. CuO was selected as a liquid-phase sintering aid to lower the sintering temperature of ZnTa₂O₆ ceramics. With CuO addition, the sintering temperature of ZnTa₂O₆ can be effectively reduced from 1350 to 1230 °C. The crystalline phase exhibited no phase difference and no second phase was detected at low addition levels (0.25-1 wt.%). The quality factors Q × f were strongly dependent upon the CuO concentration. A Q × f value of 65,500 GHz was obtained for specimen with 0.25 wt.% CuO addition at 1230 °C. For all levels of CuO concentration, the relative dielectric constants were not significantly different and ranged from 34.2 to 35.7. Tunable temperature coefficient of resonant frequency (τ_f) can be adjusted to zero by appropriately turning the CuO content.     

Improved high-Q microwave dielectric resonator using CuO-doped MgNb2O6 ceramics

The microwave dielectric properties and the microstructures of MgNb₂O₆ ceramics with CuO additions (1-4 wt.%) prepared with conventional solid-state route have been investigated. The sintered samples exhibit excellent microwave dielectric properties, which depend upon the liquid phase and the sintering temperature. It is found that MgNb₂O₆ ceramics can be sintered at 1140 °C due to the liquid phase effect of CuO addition. At 1170 °C, MgNb₂O₆ ceramics with 2 wt.% CuO addition possesses a dielectric constant (ε_r) of 19.9, a Q×f value of 110,000 (at 10 GHz) and a temperature coefficient of resonant frequency (τ_f) of −44 ppm/°C. The CuO-doped MgNb₂O₆ ceramics can find applications in microwave devices requiring low sintering temperature.     

Improved microwave dielectric properties of B2O3-doped Nd(Co1/2Ti1/2)O3 ceramics with near zero temperature coefficient of resonant frequency

The microwave dielectric properties and the microstructures of Nd(Co_1/2Ti_1/2)O₃ ceramics prepared by conventional solid-state route have been studied. The prepared Nd(Co_1/2Ti_1/2)O₃ exhibited a mixture of Co and Ti showing 1:1 order in the B-site. It is found that low-level doping of B₂O₃ (up to 0.75 wt.%) can significantly improve the density and dielectric properties of Nd(Co_1/2Ti_1/2)O₃ ceramics. Nd(Co_1/2Ti_1/2)O₃ ceramics with additives could be sintered to a theoretical density higher than 98.5% at 1320 °C. Second phases were not observed at the level of 0.25-0.75 wt.% B₂O₃ addition. The temperature coefficient of resonant frequency (τ_f) was not significantly affected, while the dielectric constants (?_r) and the unloaded quality factors Q were effectively promoted by B₂O₃ addition. At 1320 °C/4 h, Nd(Co_1/2Ti_1/2)O₃ ceramics with 0.75 wt.% B₂O₃ addition possesses a dielectric constant (?_r) of 27.2, a Q × f value of 153,000 GHz (at 9 GHz) and a temperature coefficient of resonant frequency (τ_f) of 0 ppm/°C. The B₂O₃-doped Nd(Co_1/2Ti_1/2)O₃ ceramics can find applications in microwave devices requiring low sintering temperature.     

Microwave dielectric properties and microstructures of the 11Li2O-3Nb2O5-12TiO2 ceramics with B2O3 addition

The effects of B₂O₃ addition, as a sintering agent, on the sintering behavior, microstructure and microwave dielectric properties of the 11Li₂O-3Nb₂O₅-12TiO₂ (LNT) ceramics have been investigated. With the low-level doping of B₂O₃ (≤2 wt.%), the sintering temperature of the LNT ceramic could be effectively reduced to 900 °C. The B₂O₃-doped LNT ceramics are also composed of Li₂TiO₃ss and “M-phase” phases. No other phase could be observed in the 0.5-2 wt.% B₂O₃-doped ceramics sintered at 840-920 °C. The addition of B₂O₃ induced no obvious degradation in the microwave dielectric properties but increased the τ_f values. Typically, the 0.5 wt.% B₂O₃-doped ceramics sintered at 900 °C have better microwave dielectric properties of ?_r = 49.2, Q × f = 8839 GHz, τ_f = 57.6 ppm/°C, which suggest that the ceramics could be applied in multilayer microwave devices requiring low sintering temperatures.     

Machinable Al2O3/BN composite ceramics with strong mechanical properties

Al₂O₃/BN composite ceramics with nano-sized BN dispersions ranging from 0 to 30 vol.% were successfully fabricated by hot-pressing α-Al₂O₃ powders with turbostratic BN (t-BN) coating, which was prepared through chemical processes using boric acid and urea. SEM observations revealed that the nano-sized hexagonal BN (h-BN) particulates were homogeneously dispersed within Al₂O₃ grains as well as at grain boundaries. Vickers hardness of materials decreased with an increase in BN content. The fracture toughness was improved but the fracture strength had a small decrease, in comparison to Al₂O₃ monolithic ceramics. The nanocomposite ceramics with BN content more than 20 vol.% exhibited excellent machinability, which could be drilled using conventional hard metal alloy drills. Drilling rates and normal forces demonstrate the ease of machining of these materials. The preliminary information on the relationship between microstructures and properties are provided. The mechanism of material removal is also discussed.     

Influence of Bi2O3 and CuO addition on low-temperature sintering and dielectric properties of Ba0.6Sr0.4TiO3 ceramics

In this study, we tried to lower the sintering temperature of Ba_0.6Sr_0.4TiO₃ (BST) ceramics by several kinds of adding methods of Bi₂O₃, CuO and CuBi₂O₄ additives. The effects of different adding methods on the microstructures and the dielectric properties of BST ceramics have been studied. In the all additive systems, the single addition of CuBi₂O₄ was the most effective way for lowering the sintering temperature of BST. When CuBi₂O₄ of 0.6 mol% was mixed with starting BST powders and sintered at 1100 °C, the derived ceramics demonstrated dense microstructure with a low dielectric constant (? = 4240), low dielectric loss (tan δ = 0.0058), high tunability (Tun = 38.3%) and high Q value (Q = 251). It was noteworthy that the sintering temperature was significantly lowered by 350 °C compared with no-additive system, and the derived ceramics maintained the excellent microwave dielectric properties corresponding to pure BST.     

Tunable and microwave dielectric properties of Ba0.5Sr0.5TiO3-BaWO4 composite ceramics doped with Co2O3

Co₂O₃ doped BaWO₄-Ba_0.5Sr_0.5TiO₃ composite ceramics, prepared by solid-state route, were characterized systematically, in terms of their phase compositions, microstructure and microwave dielectric properties. Doping of Co₂O₃ promoted grain growth, reduced Curie temperature and broadened phase-transition temperature range of BaWO₄-Ba_0.5Sr_0.5TiO₃, which were attributed mainly to the substitution of Co³⁺ for Ti⁴⁺ at B site in the perovskite lattice. Dielectric diffusion behaviors of the composite ceramics were discussed. The composite ceramics all had dielectric tunability of higher than 10% at 30 kV/cm and 10 kHz, with promising microwave dielectric properties. Specifically, the sample doped with 0.2 wt.% Co₂O₃ exhibited a tunability of 20%, permittivity of 225 and Q of 292 (at 1.986 GHz), making it a suitable candidate for applications in electrically tunable microwave devices.     

Piezoelectric properties enhanced of Sr0.6(BiNa)0.2Bi2Nb2O9 ceramic by (LiCe) modification with charge neutrality

Aurivillius-type ceramics, Sr_0.6−x(LiCe)_x/2.5(BiNa)_0.2Bi₂Nb₂O₉(SLCBNBNO) with the charge neutrality, were synthesized by using conventional solid-state processing. Phase analysis was performed by X-ray diffraction analyses (XRD) and Raman spectroscopy. Microstructural morphology was assessed by the scanning electron microscopy (SEM). Structural, dielectric, piezoelectric, ferroelectric, and electromechanical properties of the SLCBNBNO ceramics were investigated. Piezoelectric properties were significantly enhanced compared to Sr_0.6(BiNa)_0.2Bi₂Nb₂O₉ (SBNBN) ceramic and the maximum of piezoelectric coefficient d₃₃ of the SBNBN-LC6 ceramic was 32 pC/N with higher Curie temperature (T_c ∼590 °C). In addition, mechanisms for the piezoelectric properties enhanced of the SBNBN-based ceramics were discussed.     

Study on properties of BaxSmyTi7O20 ceramics with CaO-SiO2-B2O3 glass

The effect of CaO-SiO₂-B₂O₃ (CSB) glass addition on the sintering temperature and dielectric properties of Ba_xSm_yTi₇O₂₀ ceramics has been investigated using X-ray diffraction, scanning electron microscopy and differential thermal analysis. The CSB glass starts to melt at about 970 °C, and a small amount of CSB glass addition to Ba_xSm_yTi₇O₂₀ ceramics can greatly decrease the sintering temperature from about 1350 to about 1260 °C, which is attributed to the formation of liquid phase. It is found that the dielectric properties of Ba_xSm_yTi₇O₂₀ ceramics are dependent on the amount of CSB glass and the microstructures of sintered samples. The product with 5 wt% CSB glass sintered at 1260 °C is optimal in these samples based on the microstructure and the properties of sintering product, when the major phases of this material are BaSm₂Ti₄O₁₂ and BaTi₄O₉. The material possesses excellent dielectric properties: ?_r = 61, tan δ = 1.5 × 10⁻⁴ at 10 GHz, temperature coefficient of dielectric constant is −75 × 10⁻⁶ °C⁻¹.     

Synthesis and properties of GeS2-Ga2S3-PbI2 chalcohalide glasses

The glass-forming region in the GeS₂-Ga₂S₃-PbI₂ system was determined and the basic parameters of thermal and optical properties (glass transition temperature, density, microhardness and transmission window) for these glasses have been measured. Better thermal stability originated from their larger difference between T_x and T_g in the range of 107-161 °C, higher glass transition temperatures between 252 and 398 °C and wide optical transmission window from 0.5 to 12.7 μm make these glasses the promising candidate materials for rare earth doped fiber amplifiers and nonlinear optical devices.     

Preparation and properties of negative thermal expansion Zr2WP2O12 ceramics

Using solid-state reaction method, Zr₂WP₂O₁₂ powder was synthesized for this study. The optimum heating condition was 1200 °C for 4 h. The obtained powder was compacted and sintered. The relative density of the Zr₂WP₂O₁₂ ceramics with no sintering additive was 60%. That of samples sintered with more than 0.5 mass% MgO was about 97%. The average grain size (D₅₀), as estimated from the polished surface of a sample sintered at 1200 °C for 4 h was about 1 μm. The obtained ceramics showed a negative thermal expansion coefficient of about −3.4 × 10⁻⁶ °C⁻¹. Young's modulus, Poisson's ratio, three-point bending strength, Vickers microhardness, and fracture toughness of the obtained ceramics were, respectively, 74 GPa, 0.25, 113 ± 13 MPa, 4.4 GPa and 2.3 MPa m^1/2.     

Thermal shock behavior of ZrB2--SiC ceramics with different quenching media

The thermal shock behavior of ZrB₂--SiC ceramics was studied with water, air and methyl silicone oil as quenching media, respectively. The temperature of all coolants was room temperature (25°C) and the residual strength of the ceramics after quenching was tested. The strength of the ceramics after water quenching had an obvious drop when the temperature difference, ΔT, was about 275°C, while the residual strength of the specimens quenched by air and silicone oil only varied a little and even increased slightly when the temperature difference was higher than 800°C. The different thermal conductive coefficient of the coolants and surface heat transfer coefficient resulted in the differences in the thermal shock behavior. The formation of oxidation layer was beneficial for improving the residual strength of the ceramics after quenching.     

Low-temperature firing and microwave dielectric properties of ZnO-Nb2O5-TiO2-SnO2 ceramics with CuO-V2O5

The effects of CuO-V₂O₅ addition on the sintering temperature and microwave dielectric properties of ZnO-Nb₂O₅-TiO₂-SnO₂ were investigated. The CuO-V₂O₅ addition lowered the sintering temperature of ZnO-Nb₂O₅-TiO₂-SnO₂ ceramics effectively from 1150 to 860 °C due to the liquid-phase effect of Cu₂V₂O₇ and Cu₃(VO₄)₂, as observed by XRD. The microwave dielectric properties were found to strongly correlate with the sintering temperature and the amount of CuO-V₂O₅ addition. The maximum Qf values decreased with increasing CuO-V₂O₅ content, due to the formation of the second phase, Cu₃(VO₄)₂ and CuNbO₃. Zero τ_f value can be obtained by properly adjusting the sintering temperature. At 860 °C, ZnO-Nb₂O₅-TiO₂-SnO₂ ceramics with 1.5 wt.% CuO-V₂O₅ gave excellent microwave dielectric properties: ?_r = 42.3, Qf = 9000 GHz and τ_f = 8 ppm/°C.     

Thermal and mechanical properties of sintered machinable LaPO4-ZrO2 composites

Monazite-type LaPO₄ was synthesized using the wet precipitation and mechanochemical reaction methods. Mixtures of xLaPO₄-(1−x)ZrO₂ (x=0-1) were dry-pressed to disks or plates and cold isostatically pressed (CIP) at 100 MPa for 10 min and then sintered at temperature between 1500 and 1600°C for 1, 3, and 5 h in air, respectively. Relative densities larger than 96.8% (x≤0.4) and 92% (x=0.5-1) were achieved. It was found that these composites with x≥0.25 and single-phase LaPO₄ were machinable, that is, they could be cut and drilled using conventional tungsten carbide metal-working tools. The drilling rates were measured by applying a fixed load of 49 N to the drill at 6400 rpm. X-ray diffraction results showed that the LaPO₄ did not react with ZrO₂, at least at 1600°C in air. The linear thermal expansion coefficient, thermal conductivity, bending strength, and Young’s modulus of the sintered composites were measured.     

Effect of Pb(Fe1/2Nb1/2)O3 modification on dielectric and piezoelectric properties of Pb(Mg1/3Nb2/3)O3-PbZr0.52Ti0.48O3 ceramics

10 mol% Pb(Fe_1/2Nb_1/2)O₃ (PFN) modified Pb(Mg_1/3Nb_2/3)O₃-PbZr_0.52Ti_0.48O₃ (PMN-PZT) relaxor ferroelectric ceramics with compositions of (0.9 − x)PMN-0.1PFN-xPZT (x = 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 and 0.9) were prepared. X-ray diffraction investigations indicated that as-prepared ceramics were of pure perovskite phase and the sample with composition of x = 0.8 was close to morphotropic phase boundary (MPB) between rhombohedral and tetragonal phase. Dielectric properties of the as-prepared ceramics were measured, and the Curie temperature (T_c) increased sharply with increasing PZT content and could be higher than 300 °C around morphotropic phase boundary (MPB) area. At 1 kHz, the sample with composition of x = 0.1 had the largest room temperature dielectric constant ?_r = 3519 and maximum dielectric constant ?_m = 20,475 at T_m, while the sample with composition of x = 0.3 possessed the maximum dielectric relaxor factor of γ = 1.94. The largest d₃₃ = 318 pC/N could be obtained from as-prepared ceramics at x = 0.9. The maximum remnant polarization (P_r = 28.3 μC/cm²) was obtained from as-prepared ceramics at x = 0.4.     

Preparation and properties of pressureless-sintered porous Si3N4

Wave-transparent materials used at high temperature environment generated by high supersonic and hypersonic speeds must possess excellent mechanical property. In this paper, porous Si₃N₄ ceramics with high strength were fabricated by low molding pressure (10 MPa) and pressureless sintering process, without any other pore forming agents. The sintering behavior and the effect of porosity on the mechanical strength and dielectric properties were investigated. The flexural strength of porous Si₃N₄ ceramics was up to 57–176 MPa with porosity of 45–60%, dielectric constant of 2.35–3.39, and dielectric loss of 1.6–3.5 × 10⁻³ in the frequency range of 8–18 GHz, at room temperature. With the increase of porosity, the flexural strength, dielectric constant, and dielectric loss all decreased.     

Fabrication of porous Al2O3-MgAl2O4 ceramics using combustion-synthesized powders containing in situ produced pore-forming agents

Novel pore-forming agents as well as other starting materials were produced in situ via a solution combustion process and were used to fabricate porous Al₂O₃-MgAl₂O₄ ceramics. The relative fuel-to-oxidant ratios (φ_e) of 1.06, 1.28, 1.49 and 1.70 were achieved by varying the amount of starch in the precursors. Effects of φ_e on the weight percent of the pore-forming agents in the powders, open porosity and Vickers hardness of the as-prepared porous ceramics were investigated. Experimental results revealed that the weight percent of the pore-forming agents in the powders increased significantly_, while porosity of the as-prepared ceramics first increased and then decreased as φ_e rose from 1.06 to 1.70. Meanwhile, pore size distribution became far narrower and the Vickers hardness of the porous ceramics increased as φ_e increased.     

Effect of ZrO2 addition on crystallization behaviour, porosity and chemical-mechanical properties of a CaO-TiO2-P2O5 microporous glass ceramic

2-6 mol% ZrO₂ was added to a base glass composition of P₂O₅ 31.25, CaO 43.75, TiO₂ 25 (mol%) at the expense of TiO₂. The prepared glasses were crystallized to bulk glass ceramics containing the major phases of β-Ca₃(PO₄)₂ and CaTi₄(PO₄)₆. DTA was utilized to determine the appropriate phase separation-nucleation and crystallization temperatures. The crystalline products and resulting microstructures were examined by XRD and SEM. The β-Ca₃(PO₄)₂ phase was dissolved out by leaching the resulting glass ceramics in HCl, leaving a porous skeleton of CaTi₄(PO₄)₆. It was shown that ZrO₂ addition resulted in reduction of volume porosity and mean pore diameter while the specific surface area was increased. The smallest median pore diameter and largest surface area were 8.6 nm and 32 m² g⁻¹ respectively obtained for the specimen containing 6 mol% ZrO₂. The ZrO₂ addition also improved the chemical durability and bending strength of porous glass ceramics.     

Modified tunable dielectric properties by addition of MgO on BaZr0.25Ti0.75O3 ceramics

Phase composition, microstructure and tunable dielectric properties of (1 − x)BaZr_0.25Ti_0.75O₃-xMgO (BZTM) composite ceramics fabricated by solid-state reaction were investigated. It was found Mg not only existed in the matrix as MgO, there was also trace amount of Mg²⁺ ions dissolved in the BZT grains, which led to Curie temperature of the BZTM composites ceramics shifting to below −100 °C. Dielectric permittivity of the BZTM composite ceramics was reduced from thousands to hundreds by manipulating the content of MgO. Johnson's phenomenological equation based on Devonshire's theory was used to describe the nonlinear dielectric permittivity of the ceramics with increasing applied DC field. With increasing content of MgO, anharmonic constant α_(T) increased monotonously. Dielectric permittivity was 672, while dielectric tunability was as high as 30.0% at 30 kV/cm and dielectric loss was around 0.0016 for the 0.6BaZr_0.25Ti_0.75O₃-0.4MgO sample at 10 kHz and room temperature.