新型排列组合高压缩多载波调制系统

提出一种基于高压缩多载波调制(HC-MCM,high compaction multi-carrier modulation)技术和排列组合正交频分复用(PC-OFDM,parallel combinatory OFDM)技术的新型调制系统,即排列组合高压缩多载波调制(PC/HC-MCM)系统。同PC-OFDM系统相比,PC/HC-MCM能够大幅度提高系统的带宽效率。同时给出了2种PC/HC-MCM系统的仿真性能。PC/HC-MCM系统稍加改造可以应用于不同的多载波系统。     

CMFB-DWMT多载波系统与DMT多载波系统的比较

本文首先讨论了基于余弦调制滤波器组（cosine modulation filter-banks-CMFB)的多载波调制解调结构的快速实现。然后在性能和抗噪方面对CMFB多载波结构与DMT（discretemulti-tone)作了分析和比较。计算机仿真结果显示，CMFB－DWMT(discrete wavelet multi-tone）在左频域特性、抑制噪声和抑制突发错误方面比DMT有较大的优势。     

基于OFDM系统的调制解调技术

介绍了一种在多个相互正交的子载波上并行传输数据的技术——正交频分复用（OFDM：Orthogonal Frequency Division Multiples）技术,主要研究与探讨了基带OFDM调制解调技术的基本原理及其关键技术。讨论了调制解调中的星座映射,然后在计算机上用Matlab软件对OFDM系统中常使用的QAM,QPSK和BPSK调制进行仿真,分别对各个调制方式的误码率性能进行讨论,并给出仿真结果,最后分析了基4按频率抽取的FFT算法及OFDM的FFT实现。     

第四代移动通信系统的调制技术

现有通信系统的调制技术限制了信号速率的进一步提高,即将推出的第四代(4G)移动通信系统需要更优良的调制技术。正交频分复用(OFDM)技术是很受欢迎的高速率无线通信技术,结合OFDM的调制技术将在4G系统中得到广泛应用。文中概要介绍了4G系统的特点及关键技术,然后系统介绍了OFDM多载波原理,最后重点介绍了多载波码分多址(MC-CDMA)和正交频分复用时分多址(OFDM-TDMA)两种多载波调制(MCM)技术。     

基于Matlab的OFDM调制解调系统仿真实验

本文在介绍OFDM调制解调技术原理的基础上,给出了基于Matlab仿真平台的OFDM调制解调系统仿真框图,详细介绍了关键模块的具体仿真实现方法,包括信号产生模块、基带调制模块、串并变换模块、IFFT模块等.最后对OFDM调制解调系统性能进行了仿真和分析,结果验证了本文给出的仿真模型的正确性、合理性.     

基于FPGA实现的自适应OFDM VLC仿真系统

采用现场可编程门阵列(FPGA)技术搭建了一个自适应正交频分复用(OFDM)可见光通信(VLC)仿真系统。该系统实现了自适应高阶OFDM调制和高速数据速率传输,正交振幅调制(QAM)的调制阶数M有16、64、256、1024四种方式,数据传输速率为16.8~42.0Mb/s。     

OFDM技术及其在LTE系统中的应用

正交频分复用(OFDM)是一种优越的多载波调制方式和传输技术。文章给出OFDM系统的基本模型,论述OFDM技术原理,并使用MATLAB对OFDM系统进行性能仿真,最后讨论了OFDM技术在LTE系统中的应用。     

第四代移动通信系统的调制技术

概要介绍了第四代移动通信系统特点及关键技术,系统介绍了OFDM载波技术,重点介绍了多载波码分多址(MC-CDMA)和正交频分复用时分多址(OFDM-TDMA)两种多载波调制(MCM)技术。     

一种新的正交多载波调制技术——滤波多音调制（FMT）

在无线通信中 ,以正交频分复用 (OFDM)为代表的正交多载波调制 (OMCM )技术正在获得深入研究和广泛应用。本文介绍了一种新的正交多载波调制技术———滤波多音调制(FMT) ,并对它与OFDM在无线通信中的特点和性能作了详细比较 ,就其在下一代宽带移动通信的应用前景作了初步探讨。     

正交多载波调制(OFDM)技术及其应用

本文首先介绍了正交多载波调制（OFDM）技术适用于高速数据传输的原理,着重讨论了OFDM基于FFT算法在基带实现多载波调制的原理和OFDM中的同步问题,最后对OFDM在宽带无线数据传输中的应用作了初步展望。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.