ZrB2-SiC和Csf／ZrB2-SiC超高温陶瓷基复合材料烧蚀机理的研究

通过真空热压工艺制备了ZrB2-SiC材料和Csf(碳短纤维)/ZrB2-SiC超高温陶瓷基复合材料.采用氧乙炔火焰在4186.8kW/m2的热流下分别喷吹烧蚀两种材料180s.ZrB2-SiC材料表而最高温度达到2406°C,烧蚀后质量烧蚀率为-0.14%,线烧蚀率为1×10-3mm/s,Csf/ZrB2-SiC材料表面最高温度达到1883°C,烧蚀后质量烧蚀率为-0.19%,线烧蚀率为-4×10-4mm/s.对两种材料烧蚀表面和剖面的分析发现,ZrB2-SiC材料烧蚀后由表及里依次形成了疏松ZrO2氧化层、SiC富集层和未反应层的三层结构,其中SiC富集层能够起到抗氧化的作用. Csf/ZrB2-SiC材料烧蚀后由外到内分别形成了ZrO2-SiO2氧化层、SiC耗尽层和末反应层的三层结构,其中最外层以ZrO2为骨架,SiO2弥合其中的结构有效地阻挡了烧蚀中氧的侵入.     

超音速等离子喷涂制备ZrB_2-SiC基涂层C/C复合材料的氧化烧蚀性能研究

采用包埋法、超音速等离子喷涂结合化学气相沉积工艺在C/C复合材料表面制备了SiC/ZrB_2-SiC/SiC复合涂层。借助XRD和SEM等测试手段对所制备复合涂层的微观结构进行表征,采用恒温氧化实验及氧乙炔烧蚀实验考察涂层复合材料的高温抗氧化和抗烧蚀性能。结果表明,所制备涂层复合材料在900,1100,1500℃均具有较好的高温抗氧化性能,涂层氧乙炔烧蚀60 s后,质量烧蚀率和线烧蚀率分别为-0.05 mg/s和0.56μm/s。表明所制备的ZrB_2-SiC基复合涂层在为C/C复合材料提供良好的抗烧蚀保护的同时,可对材料提供较宽温度范围的抗氧化保护。     

ZrB2-SiC和Csf/ZrB2-SiC超高温陶瓷基复合材料烧蚀机理的研究

通过真空热压工艺制备了ZrB₂-SiC材料和C_sf(碳短纤维)/ZrB₂-SiC超高温陶瓷基复合材料. 采用氧乙炔火焰在4186.8kW/m²的热流下分别喷吹烧蚀两种材料180s. ZrB₂-SiC材料表面最高温度达到2406℃, 烧蚀后质量烧蚀率为-0.14%, 线烧蚀率为-1×10^-3mm/s, C_sf/ZrB₂-SiC材料表面最高温度达到1883℃, 烧蚀后质量烧蚀率为-0.19%, 线烧蚀率为-4×10^-4mm/s. 对两种材料烧蚀表面和剖面的分析发现, ZrB₂-SiC材料烧蚀后由表及里依次形成了疏松ZrO₂氧化层、SiC富集层和未反应层的三层结构, 其中SiC富集层能够起到抗氧化的作用. C_sf/ZrB₂-SiC 材料烧蚀后由外到内分别形成了ZrO₂-SiO₂氧化层、SiC耗尽层和未反应层的三层结构, 其中最外层以ZrO₂为骨架, SiO₂弥合其中的结构有效地阻挡了烧蚀中氧的侵入.     

用碳化稻壳制备碳/碳复合材料的SiC涂层

以碳化稻壳为原料,采用包埋法在C/C复合材料表面制备了SiC涂层.用X衍射仪、扫描电镜及能谱分析仪对SiC涂层晶相、微观形貌及成分进行了分析,并探讨了涂层的形成机理.研究结果表明:所制备的SiC涂层呈网状结构,以β-SiC为主,并含有少量的α-SiC,纯度较高;碳化稻壳中含有的纳米级的SiO2微晶是低温下制备SiC涂层及涂层呈网状结构的主要原因.     

ZrB2-SiC超高温陶瓷涂层的抗烧蚀性能研究

为了提高C/C复合材料的抗氧化烧蚀性能,采用浆料浸涂与原位反应复合工艺在材料表面制备了ZrB2-SiC超高温陶瓷涂层,利用氧-丙烷火焰测试了涂层的抗烧蚀性能。结果表明:采用复合工艺所制备的ZrB2-SiC超高温陶瓷涂层与基材具有较高的结合强度;在氧-丙烷火焰冲刷条件下,涂层具有良好的抗烧蚀性能,涂层经1500℃下烧蚀600 s,ZrB2-SiC涂层无明显烧蚀,C/C复合材料保持完好。微观结构观察表明:烧蚀测试后,涂层中存在ZrO2和大量超高温陶瓷相,涂层抗烧蚀形式主要表现为热化学烧蚀和机械剥蚀。     

低温化学气相沉积SiC涂层沉积机理及微观结构

由MTS-H2体系在1000～1300℃沉积了SiC涂层,研究了SiC涂层沉积速率和温度之间的关系,MTS-H2体系沉积反应的平均活化能为114kJ/mol,用理论模型证明了低温化学气相沉积SiC为动力学控制过程.SiC涂层表面的显微结构随沉积温度变化而呈现规律的变化:沉积温度T<1150℃时,CVD SiC涂层表面致密、光滑;T≥1150℃时,CVD SiC涂层表面变得疏松、粗糙.随着沉积温度的升高,CVD SiC涂层的结晶由不完整趋向于完整;当沉积温度T≥1150℃,CVD SiC涂层的XRD谱图中除了β-SiC占主体外还出现了少量α-SiC.     

碳化硅/低密度聚乙烯复合材料的直流伏安特性

为探讨碳化硅（SiC）/低密度聚乙烯（LDPE）复合材料的电导非线性特性,结合扫描电镜观察和X射线衍射分析研究了SiC的掺量、种类、晶型及粒径对SiC/LDPE复合材料直流伏安特性的影响。研究结果表明:SiC掺量增加可导致SiC/LDPE复合材料电导率增大和电导非线性系数发生改变的临界场强值降低;当外施电场强度相等时,在相同的SiC掺量下,纳米α-SiC、绿β-SiC、黑α-SiC复合材料的电导率分别大于微米α-SiC、绿α-SiC、绿α-SiC复合材料的电导率,且前者的电导非线性特性明显优于后者;当黑 α-SiC的掺量达到37.5wt%时,SiC粒径的增大可导致双对数坐标下的电导率与场强关系曲线的拐点向低场强方向移动。      

炭二氧化硅复合气凝胶的合成及结构分析

将二氧化硅溶胶和间苯二酚-甲醛溶液混合,经溶胶凝胶反应得到复合湿凝胶. 再经超临界干燥和炭化得到炭-二氧化硅复合气凝胶. 分别用氢氟酸刻蚀和空气烧蚀复合气凝胶中的二氧化硅和炭,得到结构完整的炭气凝胶和二氧化硅气凝胶. 复合湿凝胶经常压干燥、炭化和氢氟酸刻蚀能得到炭干凝胶. 利用透射电镜和低温氮气吸附对上述凝胶的微结构进行了表征. 结果表明：复合气凝胶中,炭和二氧化硅纳米网络各自连续并相互嵌套. 由于二氧化硅纳米网络的支撑作用,复合凝胶在超临界干燥和高温炭化过程中体积收缩减小,网络塌陷降低. 所得炭气凝胶具有高比表面（934m²/g）和高孔容（3.9cm³/g）的特点.     

热压法制备B4C基复合材料的反应机理

以B4C、Si3N4、α-SiC及TiC为原料,Al2O3 Y2O3为烧结助剂,利用反应热压法制备了性能良好的B4C基复合材料.通过XRD,DSC以及EDAX分析可知:烧结后物相组成发生了变化,最终物相组成为B4C、α-SiC、BN以及TiB2,其中B4C和α-SiC是烧结后试样的主晶相.对本试验的多元体系,根据热力学原理,判断了可能出现的反应热力学行为,确定出了适合本体系的反应方程式,并分析了反应机理.     

细编穿刺碳/碳复合材料等离子火炬高温烧蚀性能研究

采用等离子火炬作为高温热源，研究了细编穿刺碳／碳复合材料高温烧蚀性能。研究结果表明：随着烧蚀区域从火焰中心到边缘的变化，材料的烧蚀特性从中心区域的以热力学烧蚀为主向靠近边缘区域的以热化学烧蚀为主过渡；碳基体和碳纤维的抗热力学烧蚀性能相当，而抗热化学烧蚀和抗氧化性，碳纤维则明显优于碳基体。     

Porous silicon and aluminum co-gettering experiment in p-type multicrystalline silicon substrate

The lifetimes of non-equilibrium minority carriers, which bound with the diffusion length, are considered as two important parameters of the low-quality multicrystalline silicon (mc-Si) substrate. Its value defines the quality of the initial substrate. It is also subjected to change as a result of many high-temperature operations during the device fabrication. Therefore, it is necessary to incorporate certain processing steps that either improve or preserve the electronic quality of the mc-Si substrate. In this study, a novel porous silicon and aluminum co-gettering experiment has been applied as a beneficial approach to improve the electronic quality of the low-resistivity mc-Si substrates. Porous silicon layers were prepared by anodization of the n⁺ silicon region by a simple electrochemical etching process using an aqueous HF-based electrolyte, which leads to the creation of porous silicon microcavities. Besides making porous silicon and aluminum co-gettered samples, both phosphorous and aluminum alloy-gettered samples and reference samples were made. The gettering-induced lifetime enhancement in the test samples was monitored by measuring the lifetime/diffusion length of the test samples using two independent methods such as photoconductivity decay (PCD) measurement and the photocurrent generation method (PCM), respectively. The result in both the measurements has shown a reasonably good agreement with each other. Therefore, it is inferred that the applied co-gettering experiment has a synergetic effect to improve the lifetime of the mc-Si substrate.     

Porous silicon and aluminum co-gettering experiment in p-type multicrystalline silicon substrate

The lifetimes of non-equilibrium minority carriers, which bound with the diffusion length, are considered as two important parameters of the low-quality multicrystalline silicon (mc-Si) substrate. Its value defines the quality of the initial substrate. It is also subjected to change as a result of many high-temperature operations during the device fabrication. Therefore, it is necessary to incorporate certain processing steps that either improve or preserve the electronic quality of the mc-Si substrate. In this study, a novel porous silicon and aluminum co-gettering experiment has been applied as a beneficial approach to improve the electronic quality of the low-resistivity mc-Si substrates. Porous silicon layers were prepared by anodization of the n⁺ silicon region by a simple electrochemical etching process using an aqueous HF-based electrolyte, which leads to the creation of porous silicon microcavities. Besides making porous silicon and aluminum co-gettered samples, both phosphorous and aluminum alloy-gettered samples and reference samples were made. The gettering-induced lifetime enhancement in the test samples was monitored by measuring the lifetime/diffusion length of the test samples using two independent methods such as photoconductivity decay (PCD) measurement and the photocurrent generation method (PCM), respectively. The result in both the measurements has shown a reasonably good agreement with each other. Therefore, it is inferred that the applied co-gettering experiment has a synergetic effect to improve the lifetime of the mc-Si substrate.     

Indentation fatigue in silicon nitride, alumina and silicon carbide ceramics

Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 μm and 25 μm, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker’s microhardness tester at various loads in the range 1–20 N. Subsequently, the gradual evolution of the damage was characterized using an optical microscope in conjunction with the image analysing technique. The materials were classified in the order of the decreasing resistance against repeated indentation fatigue at the highest applied load of 20 N. It was further shown that there was a strong influence of grain size on the development of resistance against repeated indentation fatigue on the same spot. Finally, the poor performance of the sintered silicon carbide was found out to be linked to its previous thermal history.     

Light-emitting porous silicon

Although porous silicon has been known for more than 35 years, only in 1990 was it recognized that porous silicon shows an increased bandgap and efficient room-temperature photoluminescence in the visible. This paper will give an overview of porous silicon research, with special emphasis on the formation mechanism of microporous silicon in terms of a depletion of holes in the porous region due to quantum confinement and the understanding of the origin of the visible luminescence. The status of research on electroluminescent and other devices based on porous silicon will be discussed, as well as results for other luminescent forms of nanocrystalline silicon.     

纳米微粒母料--有机硅/无机硅纳米复合物

在纳米微粒制备过程中,把纳米微粒分散在基体中,形成纳米微粒母料,既防止了纳米材料可能对环境造成的污染,又解决了纳米材料应用时的团聚问题,为收集、保存和运输纳米颗粒提供了一条安全、行之有效的途径.     

超高真空电子束蒸发在多孔硅上外延单晶硅

采用超高越空电子束蒸发的方法在用阳极氧化制备的多孔硅衬底上外延单晶硅,研究了不同多孔硅衬底对外延质量的影响。采用高能电子衍射表征外延层的晶体结构,截面透射电镜上材料的微结构,原子力镜表征外延层表面的粗糙度,卢瑟福背散射／沟道表征外延层晶体质量,扩展电阻表征材料的电学性能。一系列的测试结果表明对在5mA／cm^2电流密度下阳极氧化10min形成的多孔硅衬底,可用超高真空电子束蒸发的方法外延出质量良好的单晶硅。     

多孔硅对单晶硅少子寿命影响状况的研究

以p型单晶硅片为研究对象,在单晶硅片表面采用化学腐蚀方法制备多孔硅层,通过实验选取制备多孔硅的最佳工艺条件,采用SEM观察多孔硅表面形貌,以及用微波光电导法测试少子寿命的变化情况。结果表明,在相同的腐蚀溶液配比条件下腐蚀11min得到的多孔硅层的表面形貌最好,孔隙率最大。在850℃下热处理150min时样品少子寿命的提高达到最大,不同腐蚀时间的样品少子寿命提高程度不同,腐蚀11min的样品少子寿命提高最大,约有10%左右。多孔层的形成伴随着弹性机械应力的出现,引起多孔层-硅基底界面处产生弹性变形,这有利于缺陷和金属杂质在界面处富集。另外,多孔硅仍具有晶体结构,但其表面方向上的晶格参数要比初始硅的晶格参数大,也有利于金属杂质向多孔层迁移。     

Laser annealing of silicon

In recent years laser processing has attracted much attention in view of its potential use in basic solid-state and material science research as well as in new processing technologies. The dominant feature of laser processing being the deposition of large amounts of energy (a few J/cm²) over very short time scales (a few tens of nanoseconds), it leads to melting of surface layers of solid followed by rapid resolidification. In this article, a few basic consequences of such laser-induced phenomena in silicon are reviewed.     

高阻硅掩膜选择性生长多孔硅阵列

介绍一种在低阻P型硅衬底上用氢离子注入技术形成局部高阻硅掩膜,用电化学腐蚀选择性生长多孔硅微阵列的工艺流程。结果证明,用高阻硅掩膜选择性生长多孔硅具有很好的掩蔽效果,生成的多孔硅阵列的有序性和完整性良好。     

熔析结晶法提纯硅工艺研究进展

随着光伏产业的快速发展,对太阳能级硅原材料的需求不断增加。熔析结晶法作为一种冶金硅提纯的新工艺越来越受到重视。熔析结晶法是利用冶金硅中杂质元素的偏析行为,选择适当的熔析介质,使杂质元素从冶金硅中偏析到熔析介质中,进而获得高纯硅的方法。详细介绍了Al-Si、Sn-Si、Cu-Si、Fe-Si和Ca-Si等熔析体系对冶金硅提纯的研究现状,比较了各种介质体系的优缺点。同时针对熔析结晶法提纯硅存在的问题提出了一些建议。