Annual output estimation of concentrator photovoltaic systems using high-efficiency InGaP/InGaAs/Ge triple-junction solar cells based on experimental solar cell's characteristics and field-test meteorological data

The temperature dependences of the electrical characteristics of InGaP/InGaAs/Ge triple-junction solar cells under concentration were evaluated. For these solar cells, conversion efficiency (η) decreased with increasing temperature, and increased with increasing concentration ratio owing to an increase in open-circuit voltage. The decrease in η with increasing temperature decreases with increasing concentration ratio. Moreover, the annual output of a concentrator system with a high-efficiency triple-junction cell was estimated utilizing the experimental solar cell's characteristics obtained in this study and field-test meteorological data collected for 1 year at the Nara Institute of Science and Technology, and compared with that of a nonconcentration flat-plate system.     

Radiation effects on fabricated Cu2S/CdS heterojunction photovoltaic cells

The photovoltaic properties including I–V characteristics, junction capacitance (C–V), short-circuit current (I_sc), open-circuit voltage (V_oc), fill factor (ff), efficiency (η), and spectral response of Cu₂S/CdS heterojunction cells have been examined before and after exposure to nuclear radiation. This included γ-rays of Co-60, and electron beams (at 1.5 MeV energy).The short-circuit current (I_sc) decreased, while the open-circuit voltage (V_oc), the fill factor (ff) and the efficiency (η) increased after heat treatment (at 260°C in air for 20 min). The I_sc effect during exposure to γ-rays was studied. It was found that I_sc increases as the dose rate increases. The sensitivity dependence of the I_sc density on dose rate was observed to be linear, and hence a universal constant for its sensitivity is found to be 45 (nA/cm²) (rad/s).No permanent damage was shown until about 300 Mrad for γ rays and 380 Mrad for electron beams. After these doses, the I_sc and V_oc slightly decreased on increasing the absorbed dose.After heat treatment, the spectral response was modulated. It was found that the wavelength response against the photocurrent decreased from 1000 to 800 nm and the photocurrent also slightly decreased in the range of wavelengths from 800 to 450 nm and increased from 350 to 540 nm. Heat treatment before irradiation improved the photovoltaic cells. After irradiation by γ-rays and electron beams, the photocurrent went back to its original value by annealing (for 2 h at 500°C). The capacitance–voltage behavior decreased after irradiation and hence the doping decreased.     

High-efficiency InGaP/In0.01Ga0.99As tandem solar cells lattice-matched to Ge substrates

Conversion efficiency (AM1.5G) of more than 30% was achieved by adding a small quantity of Indium into a GaAs bottom cell in the conventional tandem solar cell on Ge substrate. It was found that the lattice-mismatch between GaAs and Ge caused misfit-dislocations in thick GaAs layers and reduced an open-circuit voltage (V_oc) of the cell. An In_0.49Ga_0.51P/In_0.01Ga_0.99As tandem cell lattice-matched to Ge showed a great improvement in efficiency, which was attributed to an increase in the V_oc of the bottom cell and increases in the photocurrents both in the top and bottom cells due to reductions in band-gap energy.     

Photoelectrochemical behavior of chemically deposited CdSe and coupled CdS/CdSe semiconductor films

Photoelectrochemical effects at chemically deposited CdSe thin films (2000 Å) coupled with as-prepared and air annealed (250°C) CdS films have been investigated by monitoring open-circuit voltage (V_oc) and short-circuit current density (I_sc) at varying incident light intensities and for different heat-treatments temperatures. Two consecutive chemical baths were used in the coupled system. Each bath has been optimized in earlier studies for the deposition of highly photosensitive CdS and CdSe thin films. The photoelectrochemical behavior of single and coupled films was investigated in ferricyanide redox couples. The enhanced short-circuit photocurrent of the as-deposited CdS/CdSe system, despite their lower photosensitivity, indicated that charge separation improved in the coupled system. The role of post-deposition thermal treatments in improving the photoelectrochemical cell characteristics and stability of coupled semiconductors was investigated. Excellent I–V properties were obtained for CdSe and CdS₂₅₀/CdSe photoelectrodes annealed at 280°C. For the coupled system: V_oc=960 mV; I_sc=8.6 mA/cm²; fill factor (ff)=0.53 and cell efficiency (η)=4.2%. The linearity of V_oc/ln(I_L) and I_sc/I_L plots supports the Schottky–Mott model for these interfaces. The stability of the coupled photoanode is superior to that of the CdSe only-film for the initial 3 h.     

Temperature dependence and the oscillatory behavior of the opto-electronic properties of a dye-sensitized nanocrystalline TiO2 solar cell

A dye-sensitized TiO₂ solar cell was developed and characterized. The I–V (current–voltage) characteristics were studied at different temperatures from −40°C to 80°C. The opto-electronic properties of the cell depend on factors like ambient temperature and the time constants of the redox processes at the cell interfaces. The temperature dependence of V_oc and I_sc were clearly demonstrated. I_sc increased with increasing temperature above room temperature, where as V_oc increased with decreasing temperature below room temperature. The opto-electronic properties showed oscillatory behavior especially at low temperatures, which may be attributed to the different velocities of the redox processes occurring at the TiO₂/dye, dye/electrolyte and the electrolyte/counter electrode interfaces.     

Degradation behaviors of electrical properties of GaInP/GaAs/Ge solar cells under <200 keV proton irradiation

The degradation effects of the GaInP/GaAs/Ge triple-junction solar cells irradiated by <200 keV protons are investigated on the basis of the spectral response analysis and measurements of electric property. The experimental results show that with increasing proton fluence I_sc, V_oc and P_max decrease obviously. The proton energy exhibits an important influence on the degradation effects of the triple-junction cells dependent on the proton penetration range in the cells. As the proton energy is lower than 100 keV, irradiation-induced damage occurs in the top cell, while the irradiation with proton energy higher than 100 keV causes damage mainly in the middle sub-cells. Comparing the changes in the electrical properties of the triple-junction cells, a conclusion can be made that the GaAs middle sub-cell plays a major role in leading to more severe degradation. In this case, the 170 keV protons are suggested to be used to evaluate the performance of the GaAs triple-junction solar cells, for they can produce more severe degradation effects.     

Temperature dependence of photocurrent components on enhanced performance GaAs/AlGaAs multiple quantum well solar cells

The performance of Al_0.36Ga_0.64As p/i/n solar cells with multiple quantum wells (MQW) of GaAs/Al_0.36Ga_0.64As in the i-region has been investigated at various temperatures, ranging from −10°C to 100°C, and compared with that of conventional solar cells composed of either the quantum well material (GaAs) or the barrier material (Al_0.36Ga_0.64As) alone. The dark currents of the MQW cells were found to lie between those of the conventional cells. The increase of dark current with temperature was accompanied by a slight decrease of the diode ideality factor. A linear dependence of open-circuit voltage (V_oc) on temperature was observed for all cells when illuminated with a 100W halogen lamp. V_oc for the MQW cells was found to be independent of the number of wells, lying between the V_oc's for the two conventional cells. The MQW cells exhibited performance improvement with temperature when compared to the conventional cells and there was a significant enhancement in the short-circuit current with temperature of those MQW cells that exhibited poorer performance at lower temperatures. Theoretical calculations have quantified the contribution of the tunneling current component to the total observed photocurrent at the various temperatures examined. It was found that tunneling currents are present at all temperatures and can be the dominant component in MQW cells of thinner wells at low temperatures. These results suggest that GaAs/Al_0.36Ga_0.64As MQW structures, of good-quality material, when processed as conventional solar cells with antireflective coatings should deliver more output power under intense illumination than conventional solar cells composed of the quantum well material alone.     

Temperature dependence of I-V characteristics and performance parameters of silicon solar cell

The temperature dependence of open-circuit voltage (V_oc) and curve factor (CF) of a silicon solar cell has been investigated in temperature range 295-320 K. The rate of decrease of V_oc with temperature (T) is controlled by the values of the band gap energy (E_g), shunt resistance (R_sh) and their rates of change with T. We have found that R_sh decreases nearly linearly with T and its affect on dV_oc/dT is significant for cells having smaller R_sh values. Series resistance also changes nearly linearly with voltage. CF depends not only on the value of R_s and other parameters but also on the rate of change of R_s with voltage. The rate of decrease of R_s with voltage and T are important to estimate the value of CF and its decrease with temperature accurately.     

Microcrystalline silicon thin-film solar cells prepared at low temperature using PECVD

The low-temperature deposition of μc-Si:H has been found to be effective to suppress the formation of oxygen-related donors that cause a reduction in open-circuit voltage (V_oc) due to shunt leakage. We demonstrate the improvement of V_oc by lowering the deposition temperature down to 140°C. A high efficiency of 8.9% was obtained using an Aasahi-U substrate. Furthermore, by optimizing textured structures on ZnO transparent conductive oxide substrates, an efficiency of 9.4% was obtained. In addition, relatively high efficiency of 8.1% was achieved using VHF (60 MHz) plasma at a deposition rate of 12 Å s⁻¹. Thus, this low-temperature deposition technique for μc-Si:H is promising for obtaining both high efficiency and high-rate deposition technique for μc-Si:H solar cells.     

Poly-Si thin films by metal-induced growth for photovoltaic applications

Poly-Si films were produced using a metal-induced growth technique by sputtering from an n-type Si target onto a 50 nm thick Co seed-layer at 625°C. Silicon grew heteroepitaxially on the CoSi₂ layer formed due to the reaction between the sputtered Si atoms and Co at the beginning stage of deposition. A 5 μm thick Si film with grain features up to 1 μm was produced on the thin and flexible tungsten substrate by using a two-step sputtering method. The films also have a natural texture structure on the surface that is strongly recommended in thin-film solar cells in order to obtain high current density by increasing incident light trapping. After post-sputtering annealing at 700°C, the measured minority carrier lifetime for poly-Si film was 1.33 μs which shows the film to be suitable for photovoltaic applications. To explore the photovoltaic applications by using MIG poly-Si films, Au/n-Si Schottky photodiodes were fabricated due to the process simplicity. The effects of different parameters, which include film doping density, active-layer thickness, Si film surface conditions and hydrogenation, were studied. It was found that with the increasing of doping density, the open-circuit voltage (V_oc) increased while short-circuit current density (J_sc) decreased. Increasing the poly-Si active-layer thickness tended to improve the light absorption with an increased J_sc, but the V_oc was decreased due to a higher value of reverse saturation current. Because the metal/semiconductor interface condition facilitates the carrier transport in Schottky devices, the earlier study of modifying the Si surface by polishing showed an improved V_oc. The overall photo response was further improved by plasma hydrogenation.     

Properties of an n-C:P/p-Si carbon-based photovoltaic cell grown by radio frequency plasma-enhanced chemical vapor deposition at room temperature

The phosphorus-doped amorphous carbon (n-C:P) films were grown by radiofrequency (RF) power-assisted plasma-enhanced chemical vapor deposition (PECVD) at room temperature using a solid phosphorus target. The influence of phosphorus doping on the material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, solar cell properties such as series resistance, short-circuit current density, open-circuit current voltage, fill factor and conversion efficiency along with the spectral response are reported for the fabricated carbon-based n-C:P/p-Si heterojunction solar cells by standard measurement technique. The cells’ performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm², 25 °C). The maximum open-circuit voltage (V_oc) and short-circuit current density (J_sc) for the cells are observed to be approximately 236 V and 7.34 mA/cm², respectively, for the n-C:P/p-Si cell grown at a lower RF power of 100 W. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 0.84% and 49%, respectively. We have observed that the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.     

Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons

Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) solar cells subjected to proton irradiation is performed with the use of a one-dimensional optical device simulator, PC1D. By fitting the external quantum efficiencies of 3J solar cells degraded by 30 keV, 150 keV, 3 MeV, or 10 MeV protons, the short-circuit currents (I_SC) and open-circuit voltages (V_OC) are simulated. The damage coefficients of minority carrier diffusion length (K_L) and the carrier removal rate of base carrier concentration (R_C) of each sub-cell are also estimated. The values of I_SC and V_OC obtained from the calculations show good agreement with experimental values at an accuracy of 5%. These results confirm that the degradation modeling method developed in this study is effective for the lifetime prediction of 3J solar cells.     

Solar cell junction temperature measurement of PV module

The present study develops a simple non-destructive method to measure the solar cell junction temperature of PV module. The PV module was put in the environmental chamber with precise temperature control to keep the solar PV module as well as the cell junction in thermal equilibrium with the chamber. The open-circuit voltage of PV module V_oc is then measured using a short pulse of solar irradiation provided by a solar simulator. Repeating the measurements at different environment temperature (40-80 °C) and solar irradiation S (200-1000 W/m²), the correlation between the open-circuit voltage V_oc , the junction temperature T_j , and solar irradiation S is derived.The fundamental correlation of the PV module is utilized for on-site monitoring of solar cell junction temperature using the measured V_oc and S at a short time instant with open circuit. The junction temperature T_j is then determined using the measured S and V_oc through the fundamental correlation. The outdoor test results show that the junction temperature measured using the present method, T_jo, is more accurate. The maximum error using the average surface temperature T_ave as the junction temperature is 4.8 °C underestimation; while the maximum error using the present method is 1.3 °C underestimation.     

Kinetics of temperature-dependent photoinduced redox reactions in a photoelectrochemical cell

The effect of temperature on the electrode kinetics of photovoltage generation in photoelectrochemical (PEC) cells consisting of a phenazine dye-EDTA system, separated from an aqueous solution of an electron acceptor like iodine by a salt bridge has been studied. The phenazine dyes used are phenosafranin, safranin-O, and safranin-T. The maximum photovoltages (V_oc) generated and the sunlight engineering efficiency (SEE) have been found to increase with increasing temperature, but there is a fixed critical temperature for each dye above which the V_oc decreases: 29°C for phenosafranin, 35°C for safranin-T, and 40°C for safranin-O. The photovoltage growth and decay follow the functional forms related to the relaxation times. The rate constants for the forward and backward reactions have been calculated from these relaxation times at different temperatures. The rate of the photoinduced chemical reaction increases with an increase in temperature from 20°C–50°C for all the dyes, with concomitant decrease for the backward reaction. The free energies of electron transfer across the electrode/electrolyte interface have been calculated. The activation energies calculated from the rate constants at different temperatures for phenosafranin-EDTA, safranin-T-EDTA, and safranin-O-EDTA reactions are 5.14, 5.60, and 5.63 kJ mol⁻¹ respectively.     

Determination of the electrical characteristics and thermal behaviour of a c-Si cell under transient conditions for various concentration ratios

An extended study of c-Si cell performance under transient conditions for various concentration ratios, C, between 0.6 and 12.25 is presented. PV cell temperature, T_c, open-circuit voltage, V_oc, and short-circuit current, I_sc, were measured using an experimental set-up based on a solar light simulator. The dependence of V_oc, I_sc, dV_oc/dT_c, dI_sc/dT_c and r_s on T_c was investigated against C. A model was developed to predict T_c. Generalised formulae were proposed for prediction of V_oc and I_sc. Theoretically obtained T_c and V_oc profiles were compared with the measured ones. A good agreement was observed. The time constants of V_oc and T_c profiles were determined experimentally for various C values and lie within ±5% from theoretically predicted time constants. The coefficient dV_oc/dT_c was determined for various C values. The results show a decrease in the absolute value of dV_oc/dT_c against C. A partial recovery of PV cell performance through a ventilation process was tried.     

Fluctuation model for p–n heterojunction solar cells

Influence of the roughness (microrelief) of an active interface in p–n junction solar cells (SC) on the photovoltage (the open-circuit voltage V_oc) has been studied. Nonuniformity of contact potential difference between p- and n-regions leads to barrier height fluctuation that are exponentially enhanced when dealing with barrier current. This results in some decrease of the V_oc value. Three theoretical models of averaging open-circuit voltage were used. Experimental results on p⁺-Al_xGa_1−xAs/p⁺-n-GaAs heterostructure SC with various microrelief, obtained by the anisotropic chemical etching, are compared with theoretical calculations.     

Manufacturing method for transparent electric windows using dye-sensitized TiO2 solar cells

The transparent electric windows based on dye-sensitized nanocrystalline TiO₂ solar cells have been prepared. The solar cell consists of dye-sensitized TiO₂ electrode with a TiO₂ layer of an about 8 μm thickness and of a 80×80 mm² active area, Pt counter electrode and redox electrolyte. The solar cell shows a transmittance of approximately 60% in the visible range and an open-circuit voltage (V_oc) of 0.64 V and a short-circuit photocurrent (J_sc) of 250 mA. A moderately transparent electric window composed of nine unit solar cells in series generates V_oc of 5.7 V and J_sc of 220 mA at one sun light intensity.     

A study of vapor CdCl2 treatment by CSS in CdS/CdTe solar cells

We report the effect of CdCl₂ vapor treatment on the photovoltaic parameters of CdS/CdTe solar cells. Vapor treatment allows combining CdCl₂ exposure time and annealing in one step. In this alternative treatment, the CdS/CdTe substrates were treated with CdCl₂ vapor in a close spaced sublimation (CSS) configuration. The substrate temperature and CdCl₂ powder source temperature were 400 °C. The treatment was done by varying the treatment time (t) from 15 to 90 min. Such solar cells are examined by measuring their current density versus voltage (J-V) characteristics. The open-circuit voltage (V_oc), short circuit current density (J_sc) and fill factor (FF) of our best cell, fabricated and normalized to the area of 1 cm², were V_oc = 663 mV, J_sc = 18.5 mA/cm² and FF = 40%, respectively, corresponding to a total area conversion efficiency of η = 5%. In cells of minor area (0.1 cm²) efficiencies of 8% have been obtained.     

Novel materials for high-efficiency III–V multi-junction solar cells

As a result of developing wide bandgap InGaP double hetero structure tunnel junction for sub-cell interconnection, InGaAs middle cell lattice-matched to Ge substrate, and InGaP-Ge heteroface structure bottom cell, we have demonstrated 38.9% efficiency at 489-suns AM1.5 with InGaP/InGaP/Ge 3-junction solar cells by in-house measurements. In addition, as a result of developing a non-imaging Fresnel lens as primary optics, a glass-rod kaleidoscope homogenizer as secondary optics and heat conductive concentrator solar cell modules, we have demonstrated 28.9% efficiency with 550-suns concentrator cell modules with an area of 5445 cm². In order to realize 40% and 50% efficiency, new approaches for novel materials and structures are being studied. We have obtained the following results: (1) improvements of lattice-mismatched InGaP/InGaAs/Ge 3-junction solar cell property as a result of dislocation density reduction by using thermal cycle annealing, (2) high quality (In)GaAsN material for 4- and 5-junction applications by chemical beam epitaxy, (3) 11.27% efficiency InGaAsN single-junction cells, (4) 18.27% efficiency InGaAs/GaAs potentially modulated quantum well cells, and (5) 7.65% efficiency InAs quantum dot cells.     

Influence of aminothiazole additives in I/I3 redox electrolyte solution on Ru(II)-dye-sensitized nanocrystalline TiO2 solar cell performance

The influence of aminothiazole additives in acetonitrile solution of an I⁻/I₃⁻ redox electrolyte on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′- bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) (N719) dye-sensitized TiO₂ solar cell was studied. The current–voltage characteristics were investigated under AM 1.5 (100 mW/cm²) for nine different aminothiazole compounds. The aminothiazole additives tested had varying influences on the solar cell performance. Most of the additives enhanced the open-circuit photovoltage (V_oc), but reduced the short circuit photocurrent density (J_sc) of the solar cell. Both the physical and chemical properties of the aminothiazoles were computationally calculated in order to determine the reasons that the additive influenced solar cell performance. The larger the calculated partial charge of the nitrogen atom in the thiazole, the higher the V_oc value. The V_oc value increased as the dipole moment of aminothiazoles in acetonitrile increased. Moreover, the V_oc of the solar cell also increased as the size of the aminothiazole molecules decreased. These results suggest that the electron donicity of the aminothiazole additives influenced the interaction with the TiO₂ photoelectrode, which altered the dye-sensitized solar cell performance.