g-C3N4及改性g-C3N4的光催化研究进展

聚合型半导体材料g-C3N4因其优异的物理性能和光电性能成为当今研究的热门材料。本文从结构分析和理论计算角度讨论了g-C3N4能够作为无金属催化剂的原因,综述了介孔g-C3N4、无机元素掺杂g-C3N4、金属负载g-C3N4、g-C3N4/金属氧化物复合物和有机改性g-C3N4等不同改性g-C3N4的制备和性质,着重分析了他们催化光解水析氢反应的机理、影响因素及研究进展,并阐述了今后的研究方向。     

WO3/g-C3N4复合光催化剂制备及其可见光催化性能

将自制层状石墨相氮化碳(g-C₃N₄)和WO₃纳米片均匀混合,经煅烧制备WO₃/g-C₃N₄复合半导体。利用XRD、SEM、TEM、UV-Vis DRS和PL对其进行表征。结果表明,g-C₃N₄呈现类石墨烯状片层结构,WO₃为纳米片状结构,且分散在g-C₃N₄表面;与WO₃复合后,UV-Vis吸收边发生了红移,拓宽了g-C₃N₄对可见光的响应。以罗丹明B(RhB)为模拟污染物,考察WO₃/g-C₃N₄的光催化降解性能。WO₃/g-C₃N₄质量比为1∶5时,表现出最佳的光催化活性,可见光照60 min后,RhB降解率可达到94.9%。光催化剂具有良好的稳定性,重复使用6次后,RhB的降解率依然达到88.9%。光催化机制研究表明,超氧自由基(·O₂?)是光催化降解RhB的主要活性物种。      

MOFs/g-C3N4复合光催化剂的研究进展

金属-有机框架材料(MOFs)和石墨相氮化碳(g-C₃N₄)在产氢、CO₂还原、Cr还原以及有机污染物降解方面表现出优异的光催化性能。将MOFs和g-C₃N₄结合构建二元或三元异质结,可以克服两种材料各自的缺点,进一步提高其材料在可见光或太阳光照射下的光催化性能。重点介绍了几种典型MOFs/g-C₃N₄复合材料的制备方法及其光催化性能,并展望了该研究领域发展前景和面临的挑战。     

g-C3N4/Bi12O17Cl2复合物的制备及其光催化性能

以硝酸铋、氯化钠和氢氧化钠为原料用液相沉淀法制备g-C₃N₄/Bi₁₂O₁₇Cl₂复合光催化剂,并用X射线衍射(XRD)、傅里叶红外光谱(FT-IR)、扫描电子显微镜(SEM)、紫外-可见漫反射光谱(UV-Vis DRS)等手段表征其组成、微观形貌和性能,以罗丹明B为模拟污染物研究了在可见光照射下g-C₃N₄对g-C₃N₄/Bi₁₂O₁₇Cl₂复合光催化剂活性的影响及其光催化机理。结果表明,2% (质量分数) g-C₃N₄/Bi₁₂O₁₇Cl₂复合光催化剂的光催化性能最好,见光90 min后对罗丹明B的降解率达到98%。     

g-C3N4/POPs异质结制备及其可见光催化性能

光催化技术是一种极具应用前景的环境修复技术,开发高效、稳定、具有可见光响应的光催化剂是其研究的重点之一。本文采用常压溶剂热法,以1, 3, 5-三(4-氨基苯基)苯(TAPB)和2, 5-二甲氧基苯-1, 4二甲醛(DMTP)为单体合成的共轭多孔有机聚合物TAPB-DMTP POP为基底,原位负载不同比例的g-C₃N₄,制备g-C₃N₄/POPs复合光催化剂。通过XRD、FTIR、BET、TGA、UV-Vis DRS、电流-时间(i-t)和EIS等测试方法表征了g-C₃N₄/POPs的化学结构与光学特性。在可见光条件下,选择Cr(Ⅵ)为模型污染物探究了不同gC₃N₄负载量的g-C₃N₄/POPs光催化还原效率,并对pH值、催化剂用量和底物浓度等影响因素进一步探究。结果表明：在pH=2条件下,g-C₃N₄/POP-2表现出了最佳...     

可磁分离Fe3O4/g-C3N4复合材料的制备及其性能

为了利用Fe₃O₄的磁响应性及石墨相C₃N₄（g-C₃N₄）优良的光催化活性,首先采用高温热聚合法,以尿素为前驱体制备g-C₃N₄,然后采用水热法合成了可磁分离Fe₃O₄/g-C₃N₄复合材料。利用TEM、XRD、TGA、BET和振动样品磁强计（VSM）等多种测试手段表征分析Fe₃O₄/g-C₃N₄复合材料的形貌、晶型结构、比表面积、成分、饱和磁化强度等。通过模拟太阳光下Fe₃O₄/g-C₃N₄复合材料光催化吸附降解亚甲基蓝（MB）的实验,评价了Fe₃O₄/g-C₃N₄复合材料的吸附性能及光催化性能。结果表明,可磁分离Fe₃O₄/g-C₃N₄复合材料具有较大的比表面积,约为71.89 m²/g;且具有较好的磁性,饱和磁化强度为18.79 emu/g,可实现复合材料的分离回收;光照240 min时,Fe₃O₄/g-C₃N₄复合材料对MB的去除率为56.54%。所制备的Fe₃O₄/g-C₃N₄复合材料具有优良的吸附性能、光催化活性和磁性,并可通过外加磁场进行分离与回收。     

硅藻土/g-C3N4/氧化石墨烯复合材料的制备及其光催化性能研究

采用半封闭一步热解方法,以三聚氰胺为前驱物制备g-C₃N₄,然后以圆筒状硅藻土(DE)为载体,合成DE/g-C₃N₄复合材料。并选取天然鳞片石墨为基本原料,运用Hummers法合成了氧化石墨烯(GO),在一定量的DE/g-C₃N₄粉末中加入不同质量分数的GO,得到DE/g-C₃N₄/GO三元复合光催化材料。通过SEM、BET、EDS、XRD、FT-IR对样品的晶体结构、形貌等进行表征,研究复合材料对罗丹明B溶液的光催化降解性能。结果表明,当GO的烯掺量为5%时,DE/g-C₃N₄/GO在可见光下,120min时,对RhB的降解率为93.74%,分别比DE/g-C₃N₄和g-C₃N₄提高了15.05%和31.03%。     

WS2/g-C3N4异质结光催化分解水制氢性能及机制

通过溶剂蒸发和二次高温煅烧石墨相碳化氮(g-C₃N₄)纳米片和WS₂纳米片混合物构建WS₂/g-C₃N₄异质结,该异质结保留g-C₃N₄和WS₂主体结构的同时,在界面处形成化学键,确保该异质结的化学稳定性和热稳定性。光催化分解水制氢实验表明,WS₂纳米片含量为3wt%时光催化制氢速率高达68.62 μmol/h,分别是g-C₃N₄纳米片和WS₂纳米片的2.53倍和15.29倍,表明异质结的构建可大幅提升g-C₃N₄的光催化性能,循环实验表明该异质结在5次循环实验后光催化性能没有明显下降,表明该异质结的稳定性较好。光电性能测试表明异质结的构建不仅提高激发电子的转移效率,同时抑制激发电子空穴的复合率,大幅提升激发电子的利用效率,致使光催化分解水制氢速率较g-C₃N₄纳米片和WS₂纳米片大幅提升。      

g-C3N4基S型异质结的构建及其光催化性能研究

为了解决日益严重的环境污染和能源短缺等问题,基于半导体的光催化技术利用太阳能为环境修复和能源储存提供了一种“绿色”可持续的方案。首先介绍了g-C₃N₄的优点和局限性,以及S型半导体的优势与不足,接着介绍了g-C₃N₄基S型异质结的电子结构和光催化性质,综述了基于不同类型g-C₃N₄的S型异质结光催化材料构建和光催化性能的提升策略,并梳理了其部分应用。最后,综述了基于g-C₃N₄的S型异质结面临的挑战和未来发展趋势,有望为g-C₃N₄基S型异质结光催化材料的开发和实际应用提供重要的参考。     

g-C3N4/过渡金属硫化物复合材料的结构设计、合成及光催化应用

作为一种无机非金属半导体光催化材料,石墨相氮化碳(g-C₃N₄)由于具有独特的能带结构和晶体结构特征,在环境治理和清洁能源领域受到了广泛的关注。然而单一相g-C₃N₄存在对太阳光的响应范围偏小、比表面积小、反应活性位点少和光生电子-空穴对易复合等问题,限制了其在光催化领域的大规模使用。过渡族金属硫化物具有特殊的能带结构和优异的物理化学性质,在光催化应用中表现出较大的发展潜力。基于光催化材料当前存在的光响应范围窄、光生载流子易于复合导致光催化量子效率低、光生载流子存续时间短和反应活性位不足等问题,研究者们普遍专注于异质结尤其是Z型异质结的构建,以期解决上述问题。本文综述了g-C₃N₄和过渡金属硫化物光催化材料的性能优缺点、结构设计及反应机理等,重点梳理了异质结的构建进展情况,并展望了g-C₃N₄/过渡金属硫化物复合材料的发展前景。     

Co3O4负载rGO/g-C3N4臭氧光催化降解2,4-二氯苯氧乙酸活性研究

通过简单的水热法制备了Co₃O₄/rGO/g-C₃N₄催化剂,并在可见光照射下用于光催化臭氧氧化降解2,4-二氯苯氧乙酸(2,4-D)。利用XRD, SEM, TEM, XPS, UV-vis DRS, FT-IR和瞬态光电流对样品进行测试表征。研究表明,Co₃O₄, rGO和g-C₃N₄形成异质结后光生电子-空穴(e^--h⁺)对的分离效率,e^-的迁移能力以及光催化臭氧氧化活性都明显提升。此外,0.5Co₃O₄/0.25rGO/GCN对2,4-D具有100%的去除率,并具有最高反应速率(k=0.070 9 min^-1)。经过计算得出光催化臭氧氧化2,4-D的协同因子为3.91,表明光催化和臭氧氧化间具有较好的协同效应。活性组分的捕获实验结果表明h⁺和·OH是光催...     

MoS2/g-C3N4复合催化剂的制备及CdSe量子点敏化产氢性能研究

太阳能光催化分解水制氢被认为是从根本上解决能源与环境问题较为理想的途径之一。在以尿素为原料制得石墨相氮化碳(g-C_3N_4)的基础之上,采用简单的低温溶液反应法将二硫化钼(MoS_2)与石墨相氮化碳(g-C_3N_4)复合得到复合催化剂MoS_2/g-C_3N_4,并利用透射电子显微镜(TEM)、X射线衍射(XRD)、紫外-可见漫反射(DRS)、傅里叶变换红外光谱(FT-IR)和荧光光谱等对该复合光催化剂的组成、形貌和光物理性能进行了表征;进而以CdSe量子点为光敏剂,三乙醇胺(TEOA)为牺牲剂,构建了不含贵金属的三组分光催化产氢体系,并对体系pH值、CdSe量子点浓度等对产氢性能的影响进行了研究。结果表明:将MoS_2纳米颗粒负载到g-C_3N_4上可使g-C_3N_4的光催化产氢性能得到显著提高。当MoS_2负载量为7%(质量比)时,在最佳的条件下(pH=9.0,CdSe量子点的体积为25mL),最大产氢速率达到了141.74μmol·h-1,6h的产氢总量达到了212.61μmol。最后,结合荧光猝灭实验,推测了该体系的产氢机理。     

Study on particle-stabilized Si3N4 ceramic foams

The stability of bubbles and the microstructures of sintered Si₃N₄ ceramic foams produced by direct foaming method were investigated. The bubbles produced by short-chain amphiphiles (propyl gallate) have higher stability as compared with that produced by long-chain surfactants (TritonX-114). Si₃N₄ ceramic foams using short-chain amphiphile are particle-stabilized one, the pore cells are spherical and closed, and cell surfaces are smooth and dense. The pore cells of sintered Si₃N₄ ceramic foams using TritonX-114 foaming are coarse and large, and pore cells are polyhedral. High gas-pressure sintering is conducive to the development of the whisker-like microstructures in Si₃N₄ ceramic foams. The sintered Si₃N₄ ceramic foams with the whisker-like microstructure are quite promising for improving the mechanical strength of the ceramics by a simple and safe way.     

Structure of double interfaces system of Si3N4/SiO2/Si irradiated by γ-rays

The interfacial structures of double interfaces system of Si₃N₄/SiO₂/Si were examined using X-ray photoelectron spectroscopy (XPS) before and after ⁶⁰Co radiation. The experimental results demonstrate that there existed two interfaces, one consisted of Si₃N₄ and SiO₂, while another was made of Si and SiO₂, the interface between SiO₂ and Si was extended towards the interface of the Si₃N₄/SiO₂ meanwhile the center of the former interface was removed in the direction of the latter interface by ⁶⁰Co. The concentration of silicon in the Si₃N₄ state (BE 101.8 eV) was decreased with the variation of radiation dosage as well as bias field within the SiO₂-Si interface, remarkably. The mechanism for the experimental results is analyzed.     

Photocatalytic degradation of RhB over MgFe2O4/TiO2 composite materials

MgFe₂O₄/TiO₂ (MFO/TiO₂) composite photocatalysts were successfully synthesized using a mixing-annealing method. The synthesized composites exhibited significantly higher photocatalytic activity than a naked semiconductor in the photodegradation of Rhodamine B. Under UV and visible light irradiation, the optimal percentages of doped MgFe₂O₄ (MFO) were 2 wt.% and 3 wt.%, respectively. The effects of calcination temperature on photocatalytic activity were also investigated. The origin of the high level of activity was discussed based on the results of X-ray diffraction, UV-vis diffuse reflection spectroscopy, scanning electron microscopy, transmission electron microscopy, and nitrogen physical adsorption. The enhanced activity of the catalysts was mainly attributed to the synergetic effect between the two semiconductors, the band potential of which matched suitably.     

BN含量对多孔BN/Si3N4陶瓷结构和性能的影响

以氮化硅(Si₃N₄)为基体, 氮化硼(BN)为添加剂, 叔丁醇为溶剂, 采用凝胶注模成型与无压烧结工艺(温度为1750 ℃、保温时间为1.5 h、流动N₂气氛), 成功制备出具有一定强度和低介电常数的多孔BN/Si₃N₄陶瓷。在浆料中初始固相含量固定为15%体积分数的基础上, 研究了BN含量对多孔Si₃N₄陶瓷材料的气孔率、物相组成及显微结构的影响, 分析了抗弯强度、介电常数与结构之间的关系。结果表明, 通过改变BN含量可制备出气孔率为55.1%~66.2%的多孔Si₃N₄陶瓷; 多孔BN/Si₃N₄复合陶瓷的介电常数随着BN含量的增加而减小, 为3.39~2.25; 抗弯强度随BN含量提高而有所下降, BN质量分数为2.5%时, 抗弯强度最高, 为(74.8±4.25) MPa。     

Plasmons in double interfaces system of Si3N4/SiO2/Si irradiated by Co

The first level plasmons of Si in the pure Si state, in the SiO₂ state and in the Si₃N₄ state (corresponding to bonding energy 116.95, 122.0 and 127.0 eV) were investigated directly with X-ray photoelectron spectroscopy before and after ⁶⁰Co radiation. The experimental results demonstrate that there existed two interfaces, one consisted of plasmons of Si in the Si₃N₄ and SiO₂ states, while another was made of plasmons of Si in the pure Si state and in the SiO₂ state. When the Si₃N₄-SiO₂-Si samples were irradiated by ⁶⁰Co, the interface at Si₃N₄/SiO₂ was extended and at the same time the center of this interface moved towards the surface of Si₃N₄. The concentration of plasmon for silicon in the SiO₂ state is decreased at the SiO₂-Si interface, and the effects of radiation bias field on plasmons in the SiO₂-Si interface are observable. Finally, the mechanism of experimental results is analyzed by the quantum effect of plasmon excited by the photoelectron.     

Enhanced mechanical response of magnesium alloy ZK60A containing Si3N4 nanoparticles

ZK60A Nanocomposite containing Si₃N₄ nanoparticles was fabricated using solidification processing followed by hot extrusion. The ZK60A nanocomposite exhibited smaller grain size than monolithic ZK60A, significantly reduced presence of intermetallic phase, reasonable Si₃N₄ nanoparticle distribution, non-dominant (0 0 0 2) texture in the longitudinal direction, and 12% lower hardness than monolithic ZK60A. Compared to monolithic ZK60A (in tension), the ZK60A nanocomposite simultaneously exhibited higher 0.2% TYS, UTS, failure strain and work of fracture (WOF) (+21%, +17%, +85% and +119%, respectively). Also, compared to monolithic ZK60A (in compression), the ZK60A nanocomposite exhibited lower 0.2% CYS (−33%) and higher UCS, failure strain and WOF (+16%, +53% and +48%, respectively). The effect of adding Si₃N₄ nanoparticles on the enhanced tensile and compressive response of ZK60A is investigated in this paper.     

Effect of Si3N4-particles addition in Ag-Cu-Ti filler alloy on Si3N4/TiAl brazed joint

A novel composite filler alloy was developed by introducing Si₃N_4p (p = particles) into Ag-Cu-Ti filler alloy. The brazing of Si₃N₄ ceramics and TiAl intermetallics was carried out using this composite filler alloy. The typical interfacial microstructure of brazed joints was: TiAl/AlCu₂Ti reaction layer/Ag_(s,s) + Al₄Cu₉ + Ti₅Si_3p + TiN_p/TiN + Ti₅Si₃ reaction layer/Si₃N₄. Effects of Si₃N_4p content in composite filler alloy on the interfacial microstructure and joining properties were investigated. The distribution of Ti₅Si_3p and TiN_p compounds in Ag-based solid solution led to the decrease of the mismatch of the coefficient of thermal expansion (CTE) and the Young's modulus between Si₃N₄ and TiAl substrate. The maximum shear strength of 115 MPa was obtained when 3 wt.% Si₃N_4p was added in the composite filler alloy. The fracture analysis showed that the addition of Si₃N_4p could improve the mechanical properties of the joint.     

Thermal stability of nano-layered structure and hardness of TiAlN/Si3N4 nanoscale multilayered coating

Thermal stability of the TiAlN/Si₃N₄ nanoscale multilayered coating that was reported to show excellent hardness and toughness, has been investigated in terms of the nano-layered structure and hardness. TiAlN/Si₃N₄ nanoscale multilayered coatings with various thickness of Si₃N₄ layer were prepared by alternating deposition of TiAlN and Si₃N₄. In contrast to other nanoscale multilayered coating system such as AlN/CrN in which the intensity of the low angle XRD peaks decreases with increasing annealing temperature by interdiffusion between adjacent layers, the low angle XRD peak intensity of the nanoscale multilayered TiAlN/Si₃N₄ coatings increased after heat-treatment in an N₂ atmosphere up to 800 °C. Such a thermal stability of the nano-layered structure is believed to be due to spinodal type phase separation of TiAlN and Si₃N₄, which increased the hardness value of the TiAlN/Si₃N₄ coating at high temperatures.