Analysis of the growth of GaN epitaxy on silicon

Due to the great potential of GaN based devices,the analysis of the growth of crack-free GaN with high quality has always been a research hotspot.In this paper,two methods for improving the property of the GaN epitaxial layer on Si (111) substrate are researched.Sample A,as a reference,only has an AlN buffer between the Si substrate and the epitaxy.In the following two samples,a GaN transition layer (sample B) and an AlGaN buffer (sample C) are grown on the AlN buffer separately.Both methods improve the quality of GaN.Meanwhile,using the second method,the residual tensile thermal stress decreases.To further study the impact of the two introduced layers,we investigate the stress condition of GaN epitaxial layer by Raman spectrum.According to the Raman spectrum,the calculated residual stress in the GaN epitaxial layer is approximately 0.72 GPa for sample B and 0.42 GPa for sample C.The photoluminescence property of GaN epitaxy is also investigated by room temperature PL spectrum.     

Tris（8—Hydroxyquinoline）Aluminum／2—（4—Biphenylyl）—5—（4—Tertbutylphenyl）—1,3,3—O—xadiazole Organic Multiple Quantum Wells for Electroluminescent Devices

Organic multiple quantum wells(OMQWs) consisting of alternating layers of organic materials have been fabricated from tris(8-hdroxyquinoline) aluminum(Alq)and 2-(4-biphenylyl)-5-(4-tertbutylphenyl)-1,3,3-oxadiazole(PBD)by a multisource-type high-vacuum organic molecular deposition.From the small-angle X-ray diffraction patterns of Alq/PBD OMQWs,a periodically layered structure is confirmed through the entire stack.The Alq layer thickness in the OMQWs was varied from 1 nm to 4 nm.From the optical aborption, photoluminescence and electroluminescence measurements,it is found that the exciton energy shifts to higher energy with decreasing Alq layer thickness,The changes of the exciton energy could be interpreted as the confinement effects of exciton in the Alq thin layers.Narrowing of the emission spectrum has also been observed for the electroluminescent devices(ELDs)with the OMQWs structure at room temperature.     

Fabrication of Alq3／PBD OMQW Structures and Its Photoluminescence Characteristics

Organic multiple quantum well(OMQW)structures consisting of alternating layers of tris(8-quinolinolato)aluminum(Ⅲ）（Alq3)an 2-(4-biphenylyl)-5-(4-ter-butylphenyl)-(1,3,3-oxadiazole)(PBD)have been fabricated by organic molecular beam deposition(OMBD).The individual layer thickness in the multilayer samples was varied from 6 nm tp 20nm.The multiple quantum well structures were determined by low angle X-ray diffraction,optical absorption and photoluminescence(PL).The PL spectra narrow and the emission energy has been observed to shift to higher energy compared with that in the monolayer structure,suggesting a quantum size effect.     

Laser diffraction from capillary waves on liquid film surfaces

A simple experiment for laser diffraction of capillary waves on liquid film surface (LFS) is realized. Steady and visible diffraction patterns are obtained. The dispersion relation of capillary waves on LFS is verified by laser diffraction. In particular, both the relation between the wave number and the film thickness at a fixed angular frequency and the relation between the angular frequency and the wave number at a fixed film thickness are investigated. The theoretical and experimental results are in good agreement.     

Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy

Arrays of strained InAs islands in an (In, Ga)As matrix on an InP(100) substrate are synthesized by molecular-beam epitaxy, and their structural and optical properties are investigated. According to transmission electron microscope and high-energy electron diffraction data, the critical thickness corresponding to the onset of island growth is 3 monolayers. The resulting InAs islands are coherently strained, and their base diameter varies from 20 nm to 90 nm. The formation of islands produces in the photoluminescence spectra a dominant long-wavelength line, which shifts toward lower energies as the effective thickness of the InAs increases. The radiation emitted by the InAs islands spans a wavelength range of 1.65–2 μm. Fiz. Tekh. Poluprovodn. 31, 1256–1260 (October 1997)     

Radial microstructure and optical properties of a porous silicon layer by pulse anodic etching

This paper investigates the radial refractive index and optical and physical thicknesses of porous silicon (PS) layers prepared by pulse etching by means of reflectance spectroscopy,photoluminescence spectroscopy and scanning electron microscopy(SEM).The relationship between the radial refractive index and optical thickness of the PS sample and the position away from the etched centre along the radial direction has been analyzed in detail. With the position farther away from the etched centre,the SEM image shows that the physical thickness of the PS sample decreases slowly,whereas intensely decreases from 2.48 to 1.72μm near the edge at a distance of 58μm.Moreover,the radial refractive index increases,indicating that the porosity becomes smaller.Meanwhile,the reflectance spectra exhibit the less intense interference oscillations,which mean that the uniformity and interface smoothness of the PS layers become worse,and the envelope curves of photoluminescence spectra exhibit a trend of blue-shift,indicating a reduction in nanocrystal dimensions.The PS micro-cavity is prepared to study the radial optical properties of the PS layer,and the results verify that the uniformity and smoothness of the PS layer in the centre are better than those at the edge.     

Characterization of GaN Buffer Layers and Its Epitaxial Layers Grown by MOCVD

Low-pressure MOCVD has been used to investigate the properties of low-temperature buffer layer depodition conditions and their influence on the properties of high-temperature GaN epilayers grown subsequently.It is found that the surface morphology of the as-grown buffer layer after thermal annealing at 1030℃and 1050℃ depends strongly on the thickness of the buffer layer.In particular when a thick buffer layer is used, large trapezoidal nuclei are formed after annealing.     

Heteroepitaxial growth of InAs on Si: A new type of quantum dot

The mechanism for heteroepitaxial growth in the InAs/Si system is studied by reflection highenergy electron diffraction, scanning tunnelling microscopy, and photoluminescence. For certain growth conditions, InAs nanostructures are found to develop on the Si surface immediately during the growth process in the course of molecular beam epitaxy. The range of substrate temperatures that lead to formation of nanosized islands is determined. InAs quantum dots grown on a buffer Si layer with a silicon layer of thickness 50 nm grown on the top produced photoluminescence lines at a wavelength of 1.3 μm at 77K and 1.6 μm at 300 K. Fiz. Tekh. Poluprovodn. 33, 1066–1069 (September 1999)     

The strong absorption characteristics of ternary one-dimensional photonic crystals with silver layer

In order to achieve broadband and efficient optical absorption, the multiple silver nanolayer was introduced into the photonic crystals to form a one-dimensional ternary periodic symmetric structure. The effects of thickness of each layer on the band range, absorption bandwidth, absorbance and absorption energy field distribution of the solar spectrum high absorption band were studied by the transfer matrix method. The absorption band with wavelength range from 724 nm to 1 188 nm, spectral width of 464 nm, and average absorbance of 0.78 was obtained by structural adjustment. The absorbed energy is mainly distributed in the first half of the symmetrical structure of the photonic crystal. When the thickness of the silver layer decreased from 30 nm to 15 nm, the local energy in each period increased significantly. At the same time, the distribution and transfer of energy in silicon and MgF2 layers can be controlled. The results of this paper can be used to improve the absorption of solar radiation, and provide an important basis for the design of photonic crystal and their application in solar energy utilization.     

Traffic sign recognition based on deep convolutional neural network

Traffic sign recognition (TSR) is an important component of automated driving systems. It is a rather challenging task to design a high-performance classifier for the TSR system. In this paper, we propose a new method for TSR system based on deep convolutional neural network. In order to enhance the expression of the network, a novel structure (dubbed block-layer below) which combines network-in-network and residual connection is designed. Our network has 10 layers with parameters (block-layer seen as a single layer): the first seven are alternate convolutional layers and block-layers, and the remaining three are fully-connected layers. We train our TSR network on the German traffic sign recognition benchmark (GTSRB) dataset. To reduce overfitting, we perform data augmentation on the training images and employ a regularization method named “dropout”. The activation function we employ in our network adopts scaled exponential linear units (SELUs), which can induce self-normalizing properties. To speed up the training, we use an efficient GPU to accelerate the convolutional operation. On the test dataset of GTSRB, we achieve the accuracy rate of 99.67%, exceed-ing the state-of-the-art results.     

新型有机电致蓝色磷光器件的研究

设计了一种Ge/Si波导集成型雪崩光电二极管(APD)。器件采用将Si波导层置于Ge吸收层之下的结构,光经波导层进入吸收层只需一次耦合,降低了光的损耗,提高了光的吸收率和光电流。采用silvaco软件对器件的结构和性能进行仿真,结果表明:器件的雪崩击穿电压为-28V,最大内量子效率达到89%,在1.15~1.60μm范围内具有较高响应度,峰值波长位于1.31μm,单位响应度最高达0.74A/W,3dB带宽为10GHz。 更多还原     

Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices

We report on structural and optical investigations of submonolayer-CdSe/ZnSe superlattices with varying thicknesses of the ZnSe spacer layers. High-resolution electron microscopy images demonstrate the formation of two-dimensional nanoscale CdSe islands for submonolayer-CdSe depositions. The vertical island arrangement is anti-correlated for spacer layer thicknesses exceeding 30Å, while predominantly vertically correlated growth occurs for thinner spacers. The different vertical ordering of the CdSe islands results in two clearly distinguishable lines in photoluminescence and optical reflectance spectra, which are attributed to excitons localized in quantum dots (QDs) formed by vertically coupled and uncoupled (Cd,Zn)Se islands, respectively. δ-like emission of single QDs is demonstrated and the different carrier localization in uncoupled and coupled QDs is reflected in the polarization of the edge emission. Stimulated emission and resonant waveguiding effects are observed for both states. At the highest excitation densities, we observe saturation of the stimulated emission in edge geometry attributed to saturation of localized states.     

Ultraprecision grinding of silicon wafers using a newly developed diamond wheel

The damaged layer of 160 nm in thickness is generated on a silicon (Si) wafer, which is the thinnest damaged layer ground by a conventional diamond wheel. This means that the nanoscale damaged layer can not be gained by a traditional diamond wheel. In this study, a novel vitrified diamond wheel is developed. A 96 nm thick damaged layer is obtained by the diamond wheel developed at a feed rate of 15 µm/min, which is the 60% of the limitation induced by a traditional diamond wheel. The damaged layer of 96 nm in thickness consists of an 82 nm amorphous layer at the top, followed by a 14 nm damage crystalline layer underneath. There are no contaminations on the ground Si wafers induced by the novel diamond wheel, beside silicon oxides, which is confirmed by energy dispersive spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction (XRD) and Raman spectra. The diamond wheel has a good vitrified effect, consisting of only diamond and ceria crystalline peaks, which is identified by XRD. Porous microstructure of the diamond wheel is characterized by the field emission scanning electron microscopy.     

Si间隔层对Al(1wt.%Si)/Zr极紫外多层膜热稳定的作用研究

为了提升Al/Zr多层膜的热稳定性,采用直流磁控溅射方法制备了18个带有不同厚度Si间隔层的Al(1 wt.%Si)/Zr多层膜,并将这些样品分别进行了不同温度(100~500 ℃)的真空退火,退火时间为1 h.利用X射线掠入射反射(GIXR)和X射线衍射(XRD)的方法来研究Si间隔层对Al/Zr多层膜热稳定性的作用.GIXR测量结果表明:随着Si间隔层厚度的增大,Al膜层的粗糙度减小,而Zr膜层的粗糙度增大;XRD测量结果表明:Al和Zr膜层粗糙度的变化是由于退火后膜层中晶粒尺寸不同造成的.相比于没有Si间隔层的Al/Zr多层膜,引入厚度为0.6 nm的Si间隔层可以有效提升Al/Zr多层膜的热稳定性.     

X-ray-emission study of the structure of Si:H layers formed by low-energy hydrogen-ion implantation

Amorphous silicon layers formed by implantation of 24-keV hydrogen ions into SiO₂/Si and Si with doses of 2.7×10¹⁷ and 2.1×10¹⁷ cm^?2, respectively, were studied using ultrasoft X-ray emission spectroscopy with variations in the energy of excitation electrons. It is ascertained that the surface silicon layer with a thickness as large as 150–200 nm is amorphized as a result of implantation. Implantation of hydrogen ions into silicon coated with an oxide layer brings about the formation of a hydrogenated silicon layer, which is highly stable thermally.     

Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface

The use of the process of solid-phase recrystallization reduces to a great extent the number of defects in the silicon layer. An amorphous layer was formed by implantation of silicon ions. The crystalline quality of the SOS structures has been assessed by the method of high-resolution double-crystal X-ray diffraction. Silicon layers with a thickness d = 1000–2500 Å and a high crystalline quality have been obtained after implantation of 150-keV silicon ions with subsequent high-temperature annealing.

     

Interaction of self-assembled Ge islands and adjacent Si layers grown on unpatterned and patterned Si(001) substrates

For use in electronic devices, self-assembled Ge islands formed on Si(001) must be covered with an additional Si layer. Chemically vapor deposited Si layers initially grow very rapidly over Ge islands because of the catalytic effect of Ge on the reaction of the Si-containing gas. The edges of the Si features covering Ge “pyramids” are rotated by 45° with respect to the edges of the Ge pyramids because of the different mechanisms orienting the Ge islands and the Si features. When multiple layers of islands are formed, the in-plane ordering of the Ge islands depends on the thickness of the Si interlayer separating the island layers. When selective Si is grown on a patterned Si wafer to form the underlying structure for the Ge islands, the position of the islands is influenced by the detailed shape of the Si near the edges, which in turn depends on the thickness of the selectively deposited Si, the pattern size, and the amount of surrounding oxide.     

Anodization of nanoscale Si layers in silicon-on-insulator structures

Anodization of silicon-on-insulator (SOI) layers is studied as a function of the SOI layer thickness in the range from 5 to 500 nm. It is found that thinning of the silicon film to less than 100 nm is accompanied by a sharp decrease in the anodization rate. For SOI films thinner than or on the order of magnitude of ∼10 nm, the limiting thickness of the oxidized silicon layer is 0.4 nm. It is shown that the main cause of a decrease in the anode current efficiency during oxidation of nanoscale Si layers is an increase in the resistance of the silicon active layer, which limits the hole current in the film plane and, hence, the number of silicon cations coming to the SiO₂/electrolyte interface for their subsequent oxidation.     

Thickness estimation of silicon-on-lnsulator by means of the fourier transform of bilinearly transformed infrared reflectance data

Knowledge of film thickness is essential for device design in silicon-on-insulator technology. A new thickness estimation technique, based on the calculation of the spatial frequencies of bilinearly transformed infrared reflectance data in a spectral window, is introduced. The assignment of dominant spectral peaks in the power spectral density curve to the optical thickness of the silicon, silicon dioxide and the combined layer, is also presented. Examples for silicon-on-silicon dioxide with the silicon layer ranging in thickness between 1000 nm and 50 nm, with fixed oxide thickness, are presented. Thickness values of both layers to better than a few percent accuracy, were obtained for silicon layers down to 100 nm and with reduced accuracy for layers as thin as 50 nm.     

Formation,crystal structure,and properties of silicon with buried iron disilicide nanocrystallites on Si (100) substrates

Methods of low-energy electron diffraction, measurements of the Hall effect in situ, atomic-force microscopy, and high-resolution transmission electron microscopy were used to study the formation of iron silicide islands on the Si(100)–(2×1) surface and overgrowth of these islands with silicon; the electrical properties and structure of silicon with buried iron silicide nanocrystallites were studied. The best crystal quality of the continuous single-crystal silicon layer and the minimum roughness of its surface were observed at the silicon growth temperature of 700°C and the layer thickness of 100 nm. A model of growth of silicon over the ironsilicide nanocrystals is suggested. Two types of formed nanocrysrallites were found: small nanocrystallites (5–6 nm) of β-FeSi₂ and large nanocrystallites (30–50 nm) of γ-FeSi₂. The good agreement between the electrical parameters of silicon with buried iron disilicide nanocrystallites and those of atomic-clean silicon confirmed that there is minimum scattering of charge carriers at nanocrystallites in the temperature range of 300–540 K.