晶体硅太阳电池的应用及发展

随着全球气候变暖、污染问题日益严重,从传统能源向可再生能源的转变势在必行。其中太阳能作为可再生能源的重要部分,最近几年已经得到了很广泛的应用。晶体硅太阳能电池是目前多种太阳能电池中技术最为成熟、光电转换效率最高、应用最为广泛的一种,目前国外单晶硅太阳能电池实验室转换效率最高已达到24.7%,多晶硅太阳能电池达到19.8%。本文就晶体硅太阳电池的应用及发展做一简要介绍。     

聚光光伏技术及研究进展

<正>聚光光伏技术是指利用光学元件将太阳光汇聚后,通过高转化效率的光伏电池(GaAs基)直接转换为电能的技术,被认为是太阳能发电未来发展趋势的第三代技术,即聚光光伏(CPV)。1.聚光光伏技术概述GaAs基太阳能电池可分为单结和多结叠层式太阳能电池两类。GaAs、Ge单结太阳电池理论效率27%,实验室效率达到     

非晶硅薄膜太阳能电池应用开发新进展

非晶硅（ａ－Ｓｉ）薄膜太阳能电池是取之不尽的洁净能源－太阳能的光电元（组）件。文章详述了ａ－Ｓｉ薄膜太阳能电池的工艺优势，市场开发状况，可能应用领域，存在问题和展望。     

太阳能利用技术上的突破：与电力价效比相当

美国制定了太阳能发电制造技术发展规划(PVMaT),该项计划由美国能源部拨款,由国家可重新利用能源实验室(NREL)具体实施。现在,太阳能发电制造技术研究的目标是如何降低太阳能发电的成本。最近报道的太阳能电池效率有新突破,太阳能电池每瓦的成本与电每瓦的成本相当。世界上很多国家都在研究太阳发电技术问题,因为太阳能发电可以用不同的途径实现。太阳能电池基本上采用p—n结光电二极管。本文主要介绍太阳能电池工业生产技术。美国有5个较大的太阳能电池制造商,其中4个制造商参与了PVMaT。还有8个较小的制     

工作温度对硅基太阳电池转换效率的影响

基于wxAMPS软件建立硅基太阳电池一维物理模型,在温控条件下分别模拟计算了单晶硅电池和非晶硅电池的输出特性,并利用太阳能综合测试平台在温控条件下测试了单晶硅和非晶硅电池的输出特性.模拟结果表明非晶硅电池在温度升高过程中的光电转换效率下降幅度显著降低,与实验结果吻合.     

超声退火形成片状PCBM堆积聚合物太阳电池研究

采用超声退火方法制备了P3HT/PCBM聚合物有机太阳电池。测试结果表明:超声退火40℃制备的电池能量转换效率最好,最优器件的能量转换效率达到了5.16%,这主要归因为超声退火40℃的电池薄膜内形成了片状PCBM堆积,有效地提高了器件的电子迁移率和太阳能吸收效率。     

利用太阳能电池供电

用太阳能电池供电太阳能电池按材料不同可分为：硅的结晶态、非结晶态或复合半导体。理论上，单晶硅太阳能电池的效率约为３０％，其输出电流完全取决于即时入射光的总量，典型开路电压是０．５５Ｖ（图１）。电流流出电池时，内阻会引起电压降，但是当太阳能不足以提供负载所需的电流时，电池电流将受到限制，电压基本为一固定值。全日照情况下（光辐射度为１ｋＷ／ｍ２），一个信用卡大小的硅太阳能电池的短路电流为０．３Ａ。一节全日照条件下的电池，电压典型值为０．４８４Ｖ，电流值为０．２５Ａ～０．２７５Ａ。这个电压对绝大多数的…     

太阳电池制造过程中的测试工艺

太阳能电池是把太阳能转化为电能的装置,一般的太阳能电池是用半导体材料制成的。按照晶体硅太阳电池制造的工艺流程,对太阳电池制造过程中各工序之间的测试项目进行了介绍。同时,介绍了各测试项目的测试设备、测试原理以及测试过程。     

SILAR次数对In掺杂CdS量子点敏化太阳电池的影响

以In掺杂CdS量子点太阳能电池为例,讨论了SILAR次数对In掺杂CdS量子点敏化太阳能电池性能的影响。通过SEM、EDS、IPCE、紫外吸收光谱、J-V曲线、EIS等实验测试结果表明,当In掺杂CdS的摩尔比固定在1:5时,随着SILAR次数的增加,电池的短路电流密度、开路电压和光电转换效率都随着增加,当SILAR次数为6次时,In掺杂CdS的QDSCs光电转化效率达到了最大值(η=0.76%)。随着SILAR次数的继续增加,其光电转换效率将会下降。     

全自动光伏组件缺陷测试设备的设计

基于电致发光原理利用高分辨率的CCD红外相机对各种太阳能电池组件进行缺陷检测,并通过试验对各种缺陷的特点进行了详细归纳。设备实现了进料、出料及接线自动化,大大提高了检测效率。     

背接触太阳电池的背面设计优化

利用quokka3仿真软件建立三维模型,对n型叉指背接触(IBC)单晶硅太阳电池的单元电池结构设计和栅线参数进行了仿真优化,并通过激光和丝网印刷进行了实验验证.实验结果表明,在不同IBC单元电池结构设计下,当p+发射区与n+背表面场区的宽度比值为4时,IBC太阳电池效率比宽度比值为2.3时的高0.11％.可通过减小单元...     

Characterization of laser carved micro channel polycrystalline silicon solar cell

In this study the efficiency of polycrystalline silicon solar cells was increased carving micro channel structures using a laser. In research to date, micro channel structures on the surface of polycrystalline silicon solar cells have been manufactured and studied. In an experiment polycrystalline silicon solar cell with micro channel structures on the surface demonstrated an increase in efficiency of 0.23-1.50%, as the radius of the micro channel structures varied from 15 μm to 35 μm. Micro channels also improved the Fill Factor of polycrystalline silicon solar cells. However, the efficiency started to decrease when the radius of the micro channel structures was greater than 40 μm. Detailed features of the variation in current voltage of polycrystalline silicon solar cells with micro channels are discussed.     

Thin monocrystalline silicon solar cells

One of the most effective approaches for a cost reduction of crystalline silicon solar cells is the better utilization of the crystals by cutting thinner wafers. However, such thin silicon wafers must have sufficient mechanical strength to maintain a high mechanical yield in cell and module manufacturing. The electrical performance of thin cells drops strongly with decreasing cell thickness if solar cell manufacturing technologies without a backside passivation or a back-surface-field (BSF) are applied. However, with the application of a BSF, stable efficiencies of over 17%, even with decreasing cell thickness, have been reached. Thin solar cells show lower photodegradation, as is normally observed for Cz-silicon cells with today's standard thickness (about 300 μm) because of a higher ratio of the diffusion length compared to the cell thickness. Cells of about 100-150 μm thickness fabricated with the production Cz-silicon show almost no photodegradation. Furthermore, thin boron BSF cells have a pronounced efficiency response under backside illumination. The backside efficiency increases with decreasing cell thickness and reaches 60% of the frontside cell efficiency for 150 μm solar cells and also for solar modules assembled of 36 cells of a thickness of 150 μm. Assuming, for example, a rearside illumination of 150 W/m², this results in an increased module power output of about 10% relatively     

应用于无源UHF RFID标签的CMOS兼容集成微型太阳能电池研究

在标准CMOS工艺下,设计了一种与CMOS工艺兼容的片上集成太阳能电池阵列,通过从外部环境收集光能为UHF射频识别(RFID)标签供电。采用SMIC 0.18μm CMOS工艺制备出太阳能电池阵列,其面积约为0.2mm2;在AM1.5、1 000W/m2、25℃标准测试条件下,测得最大输出功率为10.212μW,短路电流和开路电压分别为28.763μA和0.458V,光电转换效率为5.106%。相对于常规Si太阳能电池复杂的制造工艺,本文太阳能电池阵列与CMOS工艺相兼容,可与电路系统集成从而实现片上供电。     

High‐efficiency microcrystalline silicon single‐junction solar cells

This short communication highlights our latest results towards high‐efficiency microcrystalline silicon single‐junction solar cells. By combining adequate cell design with high‐quality material, a new world record efficiency was achieved for single‐junction microcrystalline silicon solar cell, with a conversion efficiency of 10.69%, independently confirmed at ISE CalLab PV Cells. Such significant conversion efficiency could be achieved with only 1.8 µm of Si. Copyright © 2013 John Wiley & Sons, Ltd.     

二氧化钛纳米管染料敏化电池的制备和性能

利用两步阳极氧化法,在钛片上成功制备了高质量的二氧化钛纳米管阵列薄膜。利用场发射扫描电子显微镜,对二氧化钛纳米管阵列薄膜进行了形貌表征。之后,将不同厚度的薄膜组装成背光式染料敏化太阳电池,并测量了它们的光电转化性能。发现,随着薄膜层厚度的增加太阳电池的转化效率也逐渐提高。当薄膜厚度为15μm时,电池的转化效率达到3.04%。     

Efficiency of the a-Si:H solar cell and grain size of SnO2transparent conductive film

The relationship between average grain size on the surface of SnO2transparent conductive film and conversion efficiency of the a-Si:H solar cell was investigated. a-Si:H solar cells were fabricated on SnO2/glass substrates with various grain sizes. The cell structure was glass/p(SiC)-i-n/Al and the effective cell area was 4 × 10^-2cm². The reflectivity from the glass substrate was reduced to about 7 percent with increasing the grain size from 0.1 to 0.8µm, and the short-circuit current was inceased from 12 to 14mA/cm². A 7.9 percent of conversion efficiency was achieved using milky SnO2film of 0.4-µm average grain size at AM-100mW/cm².     

Monolithically interconnected lamellar Cu(In,Ga)Se2 micro solar cells under full white light concentration

Thin film solar cells already benefit from significant material and energy savings. By using photon management, the conversion efficiency and the power density can be enhanced further, including a reduction of material costs. In this work, micrometer‐sized Cu(In,Ga)Se₂ (CIGS) thin film solar cells were investigated under concentrated white light illumination (1–50×). The cell design is based on industrially standardized, lamellar shaped solar cells with monolithic interconnects (P‐scribe). In order to characterize the shunt and serial resistance profiles and their impact on the device performance the cell width was reduced stepwise from 1900 to 200 µm and the P1‐scribe thickness was varied between 45 and 320 µm. The results are compared to macroscopic solar cells in standard geometry and dot‐shaped microcells with ring contacts. Under concentrated white light, the maximal conversion efficiency could be increased by more than 3.8% absolute for the lamellar microcells and more than 4.8% absolute in case of dot‐shaped microcells compared to their initial values at 1 sun illumination. The power density could be raised by a factor of 51 and 70, respectively. But apparently, the optimum concentration level and the improvement in performance strongly depend on the chosen cell geometry, the used contact method and the electrical material properties. It turns out, that the widely used industrial thin film solar cell design pattern cannot simply be adapted to prepare micro‐concentrator CIGS solar modules, without significant optimization. Based on the experimental and simulated results, modifications for the cell design are proposed. Copyright © 2015 John Wiley & Sons, Ltd.     

低光强下CdTe太阳电池的性能研究

研究了低光强下CdTe太阳电池的性能变化.基于经典的CdS/CdTe结构,建立了短路电流、开路电压、填充因子和转换效率等参数与光强之间的关系模型,模拟了0.02～1kW/m2光强范围内的主要参数变化规律.结果表明,随着光强的减小,CdTe电池短路电流呈线性减小,开路电压呈指数下降,填充因子先增大,在0.3 kW/m2附近达到最大值,之后迅速降低;转换效率逐渐恶化.研究结果为CdTe薄膜太阳电池在室外低光强下和室内应用提供了理论基础.     

High‐rate deposition of epitaxial layers for efficient low‐temperature thin film epitaxial silicon solar cells

Low–temperature deposition of Si for thin‐film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open‐circuit voltage of these solar cells. In contrast, ion‐assisted deposition produces Si films with a minority‐carrier diffusion length of 40 μm, obtained at a record deposition rate of 0.8 μm/min and a deposition temperature of 650°C with a prebake at 810°C. A thin‐film Si solar cell with a 20‐μm‐thick epitaxial layer achieves an open‐circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high‐temperature solar cell process steps. Copyright © 2001 John Wiley & Sons, Ltd.