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以巯基乙酸为稳定剂在水相中合成了CdTe量子点,并将合成的CdTe量子点进行表征、纯化。通过用0.05 mol.L-1PBS缓冲溶液调节不同的pH来考察量子点的荧光强度和pH的关系。研究发现,水溶性的CdTe量子点是pH敏感的,随着pH值的降低,量子点荧光强度的下降规律与溶液pH值呈现良好的线性关系。结果表明,CdTe量子点是一个令人满意的pH敏感的探针,有潜在的化学和生物传感能力。 相似文献
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利用柠檬酸为碳源,通过水热反应制备碳量子点,再采用EDC/NHS酰胺反应催化体系,将7-氨基-4-甲基香豆素(AMC)修饰到碳量子点表面,合成出一种香豆素修饰的碳量子点光稳定剂 (AMC-CQDs),研究了其光学性能和在纸张表面的应用性能,并且运用1931-CIE色度坐标,初步探究了纸张返黄过程的色度变化规律。结果表明: 合成的AMC-CQDs粒径均匀(4.13nm),具有良好的水溶性和紫外吸收性能,基本实现紫外区的全覆盖吸收,且其最大荧光发射波长为431nm,荧光量子产率达到38.7%,适用于高得率浆纸张增白,对纸张的初始白度可以提高4.71 ISO%;色度坐标显示该碳量子点光稳定剂对于色度坐标位于y=1.553x-0.184附近的纸张具有良好的光物理增白效果。 相似文献
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在水相中合成高发光性能的CdTe量子点,研究以巯基乙酸(TGA)为稳定剂对CdTe表面进行修饰,制备在水中分散性良好的纳米晶,通过对CdTe量子点合成反应条件的摸索,掌握了其合成的反应规律.同时用紫外分光光度计、荧光分光光度计和透射电子显微镜对其进行了表征.结果表明,回流时间、n(Cd2+):n(HTe-)、反应物浓度、TGA用量、反应体系pH值,对纳米晶的光学性质具有显著影响.回流2 h制得的CdTe纳米粒子直径约为5 nm,其发射峰窄且对称,表现出良好稳定的光学性质. 相似文献
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以TeO2为碲源,巯基丙酸(MPA)为稳定剂和还原剂,采用微波辅助加热法一步合成水溶性CdTe/ZnTe核壳结构的半导体量子点.考察了Cd/Zn反应物配比及MPA用量对CdTe/ZnTe量子点性能的影响,并用紫外、荧光光谱、高分辨透射电子显微镜(HRTEM)、X射线粉末衍射(XRD)光谱和EDX电子能谱对CdTe/ZnTe进行了表征.结果表明,在不需要另加NaBH4的条件下,同样能合成水溶性的CdTe/ZnTe量子点,且该核壳结构的CdTe/ZnTe量子点比单一的CdTe量子点具有更高的荧光量子产率. 相似文献
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巯基乙酸稳定的CdSe/ZnS核壳结构量子点的制备与表征 总被引:1,自引:0,他引:1
用非均相成核原理,在水溶液中制备CdSe/ZnS核壳结构量子点,并研究合成工艺,包括前驱物的滴加方式和用量、CdSe核的水浴反应时间、CdSe与ZnS的摩尔比等因素对CdSe/ZnS核壳结构量子点荧光性能的影响.用透射电子显微镜和x射线衍射仪测试核壳结构量子点的形貌和结构.用紫外吸收光谱与荧光光谱表征CdSe/ZnS核壳结构量子点的荧光性能.结果表明:ZnS壳层在CdSe核量子点表面外延生长,形成了核壳结构;CdSe/ZnS核壳结构量子点的荧光性能明显高于单一的CdSe量子点;合成的工艺条件会显著影响CdSe/ZnS核壳结构量子点的荧光性能. 相似文献
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The principal available methods for the preparation of high quality CdSe quantum dots (QDs) are based on organic ligands such as tri-n-octylphosphine oxide (TOPO) which lead to non-water soluble nanocrystal QDs. As most biological interactions take place in aqueous media, much effort has been made on preparation of water soluble QDs. In this report, the water soluble CdSe QDs were prepared via a ligand exchange process between organic soluble CdSe-TOPO quantum dots and poly(acrylic acid). The poly(acrylic acid) (PAA) can attach onto the surface of CdSe-TOPO quantum dots in a ligand exchange process to make water-soluble CdSe-PAA complexes. In spite of CdSe-TOPO QDs, the resultant CdSe-PAA QDs are soluble in polar solvents such as methanol or water. Optical properties of CdSe-PAA QDs in several solvents showed that the emission intensity of QDs was mainly decreased in protic solvents such as methanol or water. The TEM images of dots in different solvents were examined and some aggregation of dots was found in protic solvents. In comparison with PAA, the addition of PDMAEMA to the solution of CdSe-TOPO QDs in THF increased the emission intensity of QDs. Furthermore, we found that the entitled ligand exchange process was fast and conjugation process completed at short time intervals. The UV-irradiation of the CdSe-PAA conjugate in water showed that the emission was amplified by increasing the irradiation time. 相似文献
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采用低温水热法,以柠檬酸为配位稳定剂制备了Mn2+掺杂的CdSe量子点。用紫外吸收光谱、荧光发射光谱、X射线衍射(XRD)、透射电镜(TEM)等进行了表征。研究了Mn2+掺杂浓度对量子点的结构及其光致发光性能的影响。光致发光光谱表明,当粒子尺寸为3 nm时,在580 nm处出现了属于Mn2+的4T1-6A1跃迁的特征发射峰。当激发波长为480 nm时,在630 nm处出现了CdSe的表面缺陷发射峰。随着Mn2+的掺杂浓度增大,CdSe∶Mn表面陷阱态发射峰位置没有显著红移。TEM分析结果显示,CdSe∶Mn量子点为单分散的,尺寸约为5 nm的圆形纳米粒子。当Mn2+离子掺杂浓度不大于5%时,Mn2+取代表面晶格中的Cd2+离子位置形成辐射性表面缺陷,产生表面陷阱态发射。吸收光谱显示,随着量子点变小,吸收带边发生蓝移,显示明显的量子尺寸效应。 相似文献
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以乙二胺和丙烯酸甲酯为原料,采用扩散法合成了不同端基类型不同代数的聚酰胺-胺(PAMAM)树形高分子,并用红外光谱进行表征;以G5.0-NH2 PAMAM树形高分子为模板,以二甲基亚砜为溶剂,在常温下制备了稳定的PAMAM树形高分子包覆的CdSe@CdS核壳结构量子点,并用紫外-可见吸收光谱和荧光发射光谱进行表征。结果表明,适当厚度CdS的包覆修饰可以有效提高CdSe量子点的发光性能;与单一组分的CdSe量子点相比,CdSe@CdS核壳结构量子点的相对荧光强度最大提高约123 %。 相似文献
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以水热法在水相中直接合成了巯基乙酸修饰的CdSe量子点,并将合成的CdSe量子点进行表征、纯化。在波长365nm紫外光的激发下,CdSe量子点发射出明亮的黄绿色荧光,荧光发射峰约位于528nm,将得到的CdSe量子点纳米发光材料应用于非渗透性客体上潜指纹的荧光标记成像研究,发现CdSe量子点溶液显现的手印纹线流畅,显现细节特征明显,呈现明亮的黄绿色荧光指纹,具有很高的实用价值和鉴定价值。 相似文献
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Fast access to core/shell/shell CdTe/CdSe/ZnO quantum dots via magnetic hyperthermia method
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Luting Ling Wei Wang Cai‐Feng Wang Su Chen 《American Institute of Chemical Engineers》2016,62(8):2614-2621
The intrinsic low quantum yield (QY) of type II core shell quantum dots (QDs) composes the limitation for these heterostructured nanomaterials to be used in practical application. Herein, magnetic hyperthermia method is employed to intensify reaction process and facilely synthesize CdTe/CdSe heterostructured QDs with improved optical performance for the first time. The QY of the type II QDs is increased to 49% by further growing an inert ZnO layer. The type I interface between CdSe and ZnO helps confine electrons to the inner structure of the QDs, thus improving the QY. The successful preparation and performance enhancement of the CdTe/CdSe type II QDs via magnetic hyperthermia method demonstrate the great potential of this method for the preparation of other materials. Besides, the red‐emission QDs are used as conversion materials in white light emitting diodes to reveal their promising application in practical illumination. © 2016 American Institute of Chemical Engineers AIChE J, 62: 2614–2621, 2016 相似文献
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《Ceramics International》2016,42(13):14949-14955
The CdSe quantum dots were deposited on p type Si(100) substrate by spin coating process. CdSe quantum dots were selected as the interlayer to reduce the reverse-bias leakage current of heterojunction. Various junction parameters were determined from the current-voltage (I–V) and capacitance-voltage (C–V) characteristics. Au/CdSe quantum dots/p-Si structure exhibits a fairly low leakage current density of 4.54×10−9 A/cm2 and a high rectification ratio of 3.1×106 at applied electric field of ±4 V. Furthermore, I-V characteristics under illumination show strong photovoltaic (PV) behavior. These results are attributed to the low interfacial state density and defect density due to CdSe quantum dots at the interface. It is also evaluated that the Au/CdSe quantum dots/p-Si structure can be a potential candidate for photodiode and solar cell applications. 相似文献