Theoretical Model of Yb $^{3 + }$-Er $^{3 + }$-Tm $^{3 + }$-Codoped System for White Light Generation

We present a theoretical model of Yb$^{3 + }$-Er $^{3 + }$-Tm $^{3 + }$-co-doped system for white light generation. The energy level, electron transition process and numerical model are proposed to calculate fluorescence intensity of the system pumped by 980 nm laser. The numerical results reveal that our theoretical model is in good agreement with experimental results in literature. Optimal active ion concentrations are proposed to enable the system to emit red, blue and green lights which are mixed to generate white light in telluride matrix for display and lighting system.      

Fabrication and Characterization of Coplanar Waveguides on Silicon Using a Combination of SiO $_{2}$ and SRO $_{20}$

In this work, the use of silicon rich oxide (SRO) and chemical vapor deposition SiO$_{2}$ double layers as passivation films of coplanar waveguides (CPW) on high resistivity silicon (HR-Si) with an ${hbox{N}}^{+}$ backside is studied. The microwave performance of the fabricated CPWs is evaluated by computing the attenuation loss of the devices in the 0.045–50 GHz frequency range. Experimental results show that the ${hbox{N}}^{+}$ layer can be used without affecting CPW performance. Also, using a combined dielectric layer (SRO$_{20}$ /SiO$_{2}$ ), the attenuation losses are reduced compared to single dielectric layers.      

Impacts of $hbox{N}_{2}$ and $hbox{NH}_{3}$ Plasma Surface Treatments on High-Performance LTPS-TFT With High-$kappa$ Gate Dielectric

Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high- $kappa$ gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility $mu_{rm FE}$ improvements of $sim$86.0% and 112.5% are observed for LTPS-TFTs with $hbox{HfO}_{2}$ gate dielectric after $hbox{N}_{2}$ and $ hbox{NH}_{3}$ plasma surface treatments, respectively. In addition, the $hbox{N}_{2}$ and $ hbox{NH}_{3}$ plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility $mu_{rm FE}$ at high gate bias voltage $V_{G}$, resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage $V_{rm TH} sim hbox{0.33} hbox{V}$, excellent subthreshold swing S.S. $sim$0.156 V/decade, and high field-effect mobility $mu_{rm FE} sim hbox{62.02} hbox{cm}^{2}/hbox{V} cdot hbox{s}$ would be suitable for the application of system-on-panel.      

Impact of Design on High-Frequency Performance of Advanced MIM Capacitors Using Si $_{3}$N $_{4}$ Dielectric Layers

High-frequency characterizations of ultra thin 32 nm PECVD Si$_{3}$N $_{4}$ dielectric in an advanced metal–insulator–metal (MIM) capacitors are presented, with focus on the impact of design on the performance of MIM capacitors. Frequency dependent capacitance has been extracted over a wide range of frequency bandwidth. An equivalent model circuit of capacitors including four parameters was developed to explain this behavior. The results have been compared with the values obtained from a 3-D electromagnetic modeling. A specific chart has been introduced to predict the electrical performance of new MIM capacitor designs.      

A Low-Noise and Low-Power Frequency Synthesizer Using Offset Phase-Locked Loop in 0.13-$mu{rm m}$ CMOS

In this letter, a fractional-N frequency synthesizer based on an offset phase-locked loop (OPLL) architecture is presented. The proposed synthesizer achieves low-noise as the two low-pass filters that are inherent in the OPLL highly suppresses the quantization noise from the delta-sigma modulator. In addition, it consumes low power by employing charge-recycling technique in the sub-PLL. A prototype synthesizer implemented in 0.13 $mu{rm m}$ CMOS process achieves 9 dB of noise reduction compared to a conventional PLL while consuming 3.2 mW of power.      

High-Resolution Refractive Index and Micro-Raman Spectroscopy of Planar Waveguides in KGd(WO $_{4}$) $_{2}$ Formed by Swift Heavy Ion Irradiation

We report on the characterization of planar waveguides formed in the Raman-active crystal KGd(WO$_{4}$ )$_{2}$ using swift carbon, fluorine, and oxygen ion irradiation. The characterization of the waveguiding regions was performed using high-resolution microreflectivity and micro-Raman spectroscopy. The high-resolution microreflectivity measurement fully characterizes the refractive index profile of the barrier formed by amorphization of the crystal and detects other index variations not detected by the m-line technique. Raman spectroscopy measurements reveal details of the Raman properties of the crystal in the waveguiding region in relation to the rest of the sample for the different ion irradiations. Both of these measurement techniques are shown to be important for use of KGd(WO$_{4}$) $_{2}$ in integrated Raman-active devices.      

High-Performance 0.1-$muhbox{m}$ Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz

The realization of high-performance 0.1-$muhbox{m}$ gate AlGaN/GaN high-electron mobility transistors (HEMTs) grown on high-resistivity silicon substrates is reported. Our devices feature cutoff frequencies as high as $f_{T} = hbox{75} hbox{GHz}$ and $f_{rm MAX} = hbox{125} hbox{GHz}$, the highest values reported so far for AlGaN/GaN HEMTs on silicon. The microwave noise performance is competitive with results achieved on other substrate types, such as sapphire and silicon carbide, with a noise figure $F = hbox{1.2}{-}hbox{1.3} hbox{dB}$ and an associated gain $G_{rm ass} = hbox{8.0}{-}hbox{9.5} hbox{dB}$ at 20 GHz. This performance demonstrates that GaN-on-silicon technology is a viable alternative for low-cost millimeter-wave applications.      

Cooperative Quantum Cutting in Yb $^{3+}$–Tb $^{3+}$ Codoped Borosilicate Glasses

Quantum cutting down-conversion (DC) with the emission of two near-infrared photons for each blue photon absorbed is realized in $hbox{Yb}^{3+}hbox{–}hbox{Tb}^{3+}$ codoped borosilicate glasses. With the excitation of $hbox{Tb}^{3+}$ ion by a 484-nm monochromatic light, emission from the $^{2} hbox{F} _{5/2}rightarrow ^{2} hbox{F} _{7/2}$ transition of $hbox{Yb}^{3+}$ ions is observed and this emission is proved to originate from the DC between $hbox{Tb}^{3+}$ ions and $hbox{Yb}^{3+}$ ions. Results shows that maximum quantum efficiency reach as high as 153%, which is comparable with that in oxyfluoride glass ceramics in this system. With the advantages of excellent transparence, easy shaping, good stability, and low cost, $hbox{Yb}^{3+}hbox{–}hbox{Tb}^{3+}$ codoped borosilicate glasses are potentially used as down-converter layer in silicon-based solar cells.      

The Performance of Acoustic-Optical $Q$-switched Mode-Locking 1.34 $mu$m Nd:GdVO$_{4}$ Laser

A diode-end-pumped $Q$ -switched mode-locking $hbox{Nd:GdVO}_{4}$ laser operating at 1.34 $mu{hbox {m}}$ with an acousto-optical (AO) Q-switch in a compact V-type cavity was realized in our experiment for the first time. When the AO Q-switch repetition rate was 10 kHz, the maximum average output power of 750 mW and the pulse energy of 75 $muhbox{J}$ were obtained at the maximum incident pump power of 9 W. The mode-locking modulation depth of about 100% was obtained at certain pump power over the threshold. The mode-locked pulse inside in the $Q$-switched pulse had a repetition rate of 341 MHz, and its average pulsewidth was estimated to be about 350 ps. A developed rate equation model for the $Q$ -switched and mode-locked lasers with an AO Q-switch were proposed by using the hyperbolic secant functional methods. The results of numerical calculations of the rate equations were in good agreement with the experimental results.      

A Comparative NBTI Study of $hbox{HfO}_{2}$, $hbox{HfSiO}_{x}$, and SiON p-MOSFETs Using UF-OTF $I_{rm DLIN}$ Technique

The time, temperature, and oxide-field dependence of negative-bias temperature instability is studied in $hbox{HfO}_{2}/hbox{TiN}$, $ hbox{HfSiO}_{x}/hbox{TiN}$, and SiON/poly-Si p-MOSFETs using ultrafast on-the-fly $I_{rm DLIN}$ technique capable of providing measured degradation from very short (approximately microseconds) to long stress time. Similar to rapid thermal nitrided oxide (RTNO) SiON, $hbox{HfO}_{2}$ devices show very high temperature-independent degradation at short (submilliseconds) stress time, not observed for plasma nitrided oxide (PNO) SiON and $hbox{HfSiO}_{x}$ devices. $hbox{HfSiO}_{x}$ shows lower overall degradation, higher long-time power-law exponent, field acceleration, and temperature activation as compared to $hbox{HfO}_{2}$, which are similar to the differences between PNO and RTNO SiON devices, respectively. The difference between $ hbox{HfSiO}_{x}$ and $hbox{HfO}_{2}$ can be attributed to differences in N density in the $hbox{SiO}_{2}$ IL of these devices.      

InGaAs/GaAs 0.98- $mu{hbox {m}}$ Low-Divergence Central-Lobe Semiconductor Lasers With $delta$ -Doped Resonant Tunneling Quantum Wells

In this paper, we describe a new structure design for producing low-threshold, high-efficiency, and high-brightness 0.98-$mu{hbox {m}}$ lasers. In this structure, we incorporated a self-discriminating weak optical confinement asymmetrical waveguide coupled to passive waveguides, and an active region based on three InGaAs quantum wells (QWs) coupled to Te n-type $delta$-doping. Optimized coupling between the $delta$-doping and the three QWs, together with waveguide optimization and doping profile optimization, yields $J_{rm th}=98 {hbox {A/cm}}^{2}$ per QW, ${T}_{0}=80;^{circ}hbox{C}$, and a far-field central lobe angle of $sim 10^{circ}$.      

Eigendecomposition of Images Correlated on $S^{1}$, $S^{2}$, and $SO(3)$ Using Spectral Theory

Eigendecomposition represents one computationally efficient approach for dealing with object detection and pose estimation, as well as other vision-based problems, and has been applied to sets of correlated images for this purpose. The major drawback in using eigendecomposition is the off line computational expense incurred by computing the desired subspace. This off line expense increases drastically as the number of correlated images becomes large (which is the case when doing fully general 3-D pose estimation). Previous work has shown that for data correlated on S ¹ , Fourier analysis can help reduce the computational burden of this off line expense. This paper presents a method for extending this technique to data correlated on S ² as well as SO(3) by sampling the sphere appropriately. An algorithm is then developed for reducing the off line computational burden associated with computing the eigenspace by exploiting the spectral information of this spherical data set using spherical harmonics and Wigner-D functions. Experimental results are presented to compare the proposed algorithm to the true eigendecomposition, as well as assess the computational savings.     

A Programmable 25-MHz to 6-GHz $K/L$ Frequency Multiplier With Digital $K_{rm vco}$ Compensation

A programmable rational-$K/L$ frequency multiplier that can synthesize any frequency between 25 MHz and 6 GHz from an input clock ranging from 1 to 5.5 GHz is presented. The architecture employs a fractional-$N$ input clock divider followed by a fractional- $N$ PLL. In contrast to conventional architectures, this allows large $K$ and $L$ , whose maximum values are limited only by the word-length of digital $SigmaDelta$ modulators. Additionally, to alleviate large $K_{rm vco}$ variation and fractional spurs, which are inevitable in wide tuning range VCOs and fractional-$N$ synthesizers, new compensation techniques are implemented without involving additional circuitry. This is an ideal solution to support a programmable serializer/deserializer on a field-programmable gate array.      

High-Performance Poly-Silicon TFTs Using a High-$k$ $hbox{PrTiO}_{3}$ Gate Dielectric

In this letter, a polycrystalline-silicon thin-film transistor (poly-Si TFT) with a high- $k$ $hbox{PrTiO}_{3}$ gate dielectric is proposed for the first time. Compared to TFTs with a $hbox{Pr}_{2}hbox{O}_{3}$ gate dielectric, the electrical characteristics of poly-Si TFTs with a $hbox{PrTiO}_{3}$ gate dielectric can be significantly improved, such as lower threshold voltage, smaller subthreshold swing, higher $I_{rm on}/I_{rm off}$ current ratio, and larger field-effect mobility, even without any hydrogenation treatment. These improvements can be attributed to the high gate capacitance density and low grain-boundary trap state. All of these results suggest that the poly-Si TFT with a high- $k$ $hbox{PrTiO}_{3}$ gate dielectric is a good candidate for high-speed and low-power display driving circuit applications in flat-panel displays.      

An RNS Implementation of an $F_{p}$ Elliptic Curve Point Multiplier

Elliptic curve point multiplication is considered to be the most significant operation in all elliptic curve cryptography systems, as it forms the basis of the elliptic curve discrete logarithm problem. Designs for elliptic curve cryptography point multiplication are area demanding and time consuming. Thus, the efficient realization of point multiplication is of fundamental importance for the performance of an elliptic curve system. In this paper, a hardware architecture of an elliptic curve point multiplier is proposed that exploits the intrinsic parallelism of the residue number system (RNS), in order to speed up the elliptic curve point calculations and minimize the area complexity of the elliptic curve point multiplier. The architecture proves to be the fastest among all known design approaches, while complexity is less than half of that of previous efforts. This architecture also supports the required input (binary-to-RNS) and output (RNS-to-binary) conversions. Through a graph-oriented approach, the area of the elliptic curve point multiplier is minimized, by optimizing the point addition and doubling algorithms. Also, through this approach, the number of execution steps for point addition is matched to the number of execution steps for point doubling. Additionally, the impact of various RNS bases, in terms of number of moduli and their bit lengths, on the area and speed of the proposed implementation is analyzed, in an effort to define the potential for using RNS in elliptic curve cryptography.      

High-Performance $hbox{In}_{0.7}hbox{Ga}_{0.3}hbox{As}$ -Channel MOSFETs With High-$kappa$ Gate Dielectrics and $alpha$-Si Passivation

Long and short buried-channel $hbox{In}_{0.7}hbox{Ga}_{0.3}hbox{As}$ MOSFETs with and without $alpha$-Si passivation are demonstrated. Devices with $alpha$-Si passivation show much higher transconductance and an effective peak mobility of 3810 $hbox{cm}^{2}/ hbox{V} cdot hbox{s}$. Short-channel MOSFETs with a gate length of 160 nm display a current of 825 $muhbox{A}/muhbox{m}$ at $V_{g} - V_{t} = hbox{1.6} hbox{V}$ and peak transconductance of 715 $muhbox{S}/muhbox{m}$. In addition, the virtual source velocity extracted from the short-channel devices is 1.4–1.7 times higher than that of Si MOSFETs. These results indicate that the high-performance $hbox{In}_{0.7}hbox{Ga}_{0.3} hbox{As}$-channel MOSFETs passivated by an $alpha$ -Si layer are promising candidates for advanced post-Si CMOS applications.      

Subthreshold Parallel FM-to-Digital $Delta$– $Sigma$ Converter With Output-Bit-Stream Addition by Interleaving

Single and parallel subthreshold frequency-modulation-to-digital $Delta$–$Sigma$ modulators (FDSMs) have been implemented in a standard 90-nm CMOS technology. Theoretical and measured results are presented for both topologies. The 512-stage parallel FDSM adopts a tunable delay line and achieves bit-stream addition by interleaving at the output stage. This architecture, with respect to the conventional parallel FDSM, reduces power, area, and complexity at the cost of using clocks with higher speed in its output stage. In addition, compared to the single FDSM, the parallel converter shows an improvement in signal-to-quantization-noise ratio of more than 25 dB at supply voltages as low as 300 mV.      

$hbox{TiN/ZrO}_{2}$/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited $hbox{ZrO}_{2}$ for DRAM Applications

We provide the first report of the structural and electrical properties of $hbox{TiN/ZrO}_{2}$/Ti/Al metal–insulator–metal capacitor structures, where the $hbox{ZrO}_{2}$ thin film (7–8 nm) is deposited by ALD using the new zirconium precursor ZrD-04, also known as Bis(methylcyclopentadienyl) methoxymethyl. Measured capacitance–voltage ($C$– $V$) and current–voltage ( $I$–$V$) characteristics are reported for premetallization rapid thermal annealing (RTP) in $hbox{N}_{2}$ for 60 s at 400 $^{circ}hbox{C}$, 500 $^{circ}hbox{C}$, or 600 $^{ circ}hbox{C}$. For the RTP at 400 $^{circ}hbox{C}$ , we find very low leakage current densities on the order of nanoamperes per square centimeter at a gate voltage of 1 V and low capacitance equivalent thickness values of $sim$ 0.9 nm at a gate voltage of 0 V. The dielectric constant of $ hbox{ZrO}_{2}$ is 31 $pm$ 2 after RTP treatment at 400 $^{circ}hbox{C}$.      

High-Quality Grouped-Wavelength Conversion and Dynamic Switching Using Multiple-QPM LiNbO $_{3}$ and TLA

We demonstrate dynamic grouped-wavelength conversion using multiple quasi-phase-matched LiNbO$_{3}$ modules and a tunable laser diode array. A high signal-to-noise ratio of larger than 45 dB is obtained for the converted signals. The power penalty of the wavelength converter is confirmed to be less than 0.2 dB.      

Sharp $p$ -Divisibility of Weights in Abelian Codes Over ${BBZ}/p^d{BBZ}$

A theorem of McEliece on the $p$-divisibility of Hamming weights in cyclic codes over ${BBF}_p$ is generalized to Abelian codes over ${{{BBZ}/p^d{BBZ}}}$. This work improves upon results of Helleseth–Kumar–Moreno–Shanbhag, Calderbank–Li–Poonen, Wilson, and Katz. These previous attempts are not sharp in general, i.e., do not report the full extent of the $p$ -divisibility except in special cases, nor do they give accounts of the precise circumstances under which they do provide best possible results. This paper provides sharp results on $p$-divisibilities of Hamming weights and counts of any particular symbol for an arbitrary Abelian code over ${{{BBZ}/p^d{BBZ}}}$. It also presents sharp results on $2$-divisibilities of Lee and Euclidean weights for Abelian codes over ${{{BBZ}/4{BBZ}}}$.