Fractal features of carbon–nickel composite thin films

This work analyses the three‐dimensional (3‐D) surface texture of carbon–nickel (C–Ni) films grown by radio frequency (RF) magnetron co‐sputtering on glass substrates. The C–Ni thin films were deposited under different deposition times, from 50 to 600 s, at room temperature. Atomic force microscopy was employed to characterize the 3‐D surface texture data in connection with the statistical, and fractal analyses. It has been found that up to 180 s the sputtering occurs in more metal content mode and in greater than 180 s it occurs in more non‐metal content mode. This behavior demonstrated a strong link between the structural and morphological properties of C–Ni composite films and facilitates a deeper understanding of structure/property relationships and surface defects in prepared samples. Furthermore, these findings can be applied to research on the mechanisms to prepare and control high‐quality C–Ni films.     

Cr过渡层沉积粘附型CVD金刚石膜的机理研究

研究了电沉积层作为过渡层沉积CVD金刚石膜的工艺，在硬质合金的Cr电沉积层上用热丝法沉积出CVD金刚石膜。利用SEM分析了电沉积层的形貌，利用EPMA分析了H等离子处理后电沉积层的断面，利用SEM和Raman分析了金刚石膜的表面形貌、成分，利用XRD分析了过渡层和CVD金刚石膜的结合面．利用压痕法研究了金刚石薄膜与基体的结合力。结果表明，H等离子处理使得硬质合全与Cr镀层成为冶金结合，提高了电沉积层的结合强度；在Cr过渡层与金刚石膜之间形成的Cr3C2和Cr7C3等碳化物有利于金刚石的成核和膜基结合强度的提高。     

改善CVD金刚石薄膜涂层刀具性能的工艺研究

用热丝CVD法,以丙酮和氢气为碳源,在WC-Co硬质合金衬底上沉积金刚石薄膜,在分析了工艺条件(衬底温度、碳源浓度、反应压力)对金刚石薄膜性能的影响的基础上,提出了分步沉积法改善金刚石薄膜涂层刀具性能的新工艺.结果表明,合理控制工艺条件的新工艺对涂层薄膜质量、形貌和粗糙度、薄膜与衬底间的附着力、刀具的耐用度及切削性能有显著影响,对获取实用化的在硬质合金刀具基体上沉积高附着强度、低粗糙度金刚石薄膜的新技术具有重要的意义.     

Well-orientated cubic boron nitride nanocrystals as studied by high-resolution transmission electron microscopy

In a boron nitride thin film, grown on a Si (100) substrate by radio frequency magnetron sputtering, a striking nanostructure is observed by high‐resolution transmission electron microscopy. It consists of cubic boron nitride nanocrystals with a rather good triangular shape, pointing always to the substrate. The nanocrystals are usually highly defected and present their own interesting internal structure. Texture formation is observed within a nanocrystal, with all the subgrains observed to have a common <011> axis, which is also approximately parallel to a <011> axis of the Si substrate, i.e. the nanocrystals are very well structurally orientated in relation to the Si substrate (self‐organized). Dislocations and stacking faults are also found in the nanocrystals.     

Lift-off patterning of thin Au films on Si surfaces with atomic force microscopy

We studied a new lift-off process of thin Au film on silicon surfaces in nanometer-scale, combining anodic oxidation patterning with AFM, deposition of Au thin film on the patterned substrate and chemical etching processes of the Si oxide underneath the Au film. For Au films of thickness of 2-5 nm, the Au films on the Si oxide patterns were left unbroken and bent down to stick to Si surface after the removal of the oxide by the chemical etching. For an Au film of 1 nm in thickness, it was possible to lift-off the Au film on oxide patterns of the lines and dots in nanometer-scale using Si oxide as a sacrificial mask.     

石墨基金刚石涂层电极的制备及性能研究

采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。用喇曼谱、扫描电镜及电导一温度关系研究了掺硼金刚石涂层的生长气压和掺硼浓度等主要工艺参数对涂层的形貌、结构及电学性能的影响和涂层的循环伏安特性。结果表明，石墨基金刚石涂层电极具有优良的电化学性能。     

Effects of the Ar ions pre‐amorphization of Si substrateon interface mixing of Fe/Si bilayers

Ion beam mixing of Fe/Si bilayers, induced by 100 keV ⁴⁰Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre‐amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre‐amorphized Fe/a‐Si interface as compared to that of Fe/c‐Si bilayers was observed.     

The evaluation of surface topography changes in nanoscaled 2,6‐diphenyl anthracene thin films by atomic force microscopy

The physical properties of electronic devices made by 2,6‐diphenyl anthracene (DPA) are influenced by the microtexture of DPA surfaces. This work focused on the experimental investigation of the 3‐D surface microtexture of DPA thin films deposited on OTS (octadecyltrichlorosilane), HMDS (Hexamethyldisilasane), OTMS (octadecyltrimethoxysilane), and Si/SiO₂ (300 nm SiO₂ thickness) substrates with 5 and 50 nm thicknesses and 5 and 10 μm scan size. The thin film surfaces were recorded using atomic force microscopy (AFM) and their images were stereometrically analyzed to obtain statistical parameters, in accordance with ASME B46.1‐2009 and ISO 25178‐2: 2012. The results showed the effect of different manufacturing parameters on microtexture values where the granular structure is confirmed in all films. In addition, root mean square is increased by increasing the thickness from 5 to 50 nm for all types of substrates.     

刀具表面CVD法金刚石薄膜剥离及其结合性能

在硬质合金和Si3N4陶瓷刀具表面采用热丝CVD法合成金刚石薄膜的结合性能具有明显差异。在沉积金刚石过程中，根据碳源通入系统中的时机不同，硬质合金表面容易形成石墨、WC等松散层，膜的结合性能变差，由于热应力大，在无外力作用下膜有时发生自动剥落现象；而Si3N4陶瓷表面上金刚石膜具有良好结合性能。在压应力作用下，两衬底上的金刚石薄膜剥离过程也不同，硬质合金上膜支接以剥落形式失效，而Si3N4上膜以产生裂纹及其扩展失效。     

光纤持气率测井仪响应规律的实验研究

为考察现有光纤持气率计在油气水三相流中的响应特性,采用多相流标定装置对其进行测定,系统研究光纤持气率计在油量固定不变含水量不同条件下的持气率响应规律。实验结果表明,当油量为5m3/d、气量小于10m3/d时,持气率随含气量的增大而增大,二者线性变化程度较低;而气量在10～35m3/d之间变化时,持气率随含气量的增大而线性增大。     

CVD金刚石涂层拉丝模温度场数值分析

衬底温度是热丝化学气相沉积(HFCVD)制备金刚石薄膜的重要参数之一,在拉丝模表面沉积CVD金刚石涂层时,均匀的衬底温度场显得尤为重要.对HFCVD系统中制备CVD金刚石涂层时拉丝模衬底温度场进行数值分析,得到了拉丝模温度场的分布和热丝参数对衬底温度场的影响规律,为CVD金刚石涂层拉丝模的制备提供重要指导.     

钽喷丝头表面覆加金刚石膜的研究

为改善钽喷丝头的品质,提高其硬度和耐碱腐蚀能力,利用热丝CVD制备不同粒径的金刚石薄膜,并通过对钽衬底的碳化处理,成功使之沉积于纯钽啧丝头表面,对纯钽喷丝头进行表面强化.通过场发射扫描电镜观察,大粒径金刚石薄膜有少量孔隙,小粒径金刚石薄膜细腻致密.硬度测试结果表明,金刚石薄膜钽喷丝头表面硬度达HV1 000以上,远高于纯钽及其它工艺处理后的钽喷丝头.可纺性试验结果表明,其性能都达到或超过传统喷丝头,完全可以取代成本高昂的铂金喷丝头.     

Influence of substrate orientation on the morphologyand orientation of LaNiO3 thin films

LaNiO₃ thin films were successfully prepared by a chemical method from citrate precursors. The LNO precursor solution was spin‐coated onto Si (100) and Si (111) substrates. To obtain epitaxial or highly oriented films, the deposited layers were slowly heated in a gradient thermal field, with a heating rate of 1° min^?1, and annealed at 700°C. The influence of different substrate orientations on the thin film morphology was investigated using atomic force microscopy and X‐ray diffraction analysis. Well‐crystallized films with grains aligned along a certain direction were obtained on both substrates. Films deposited on both substrates were very smooth, but with a different grain size and shape depending on the crystal orientation. Films deposited on Si (100) grew in the (110) direction and had elongated grains, whereas those on Si (111) grew in the (211) direction and had a quasi‐square grain shape.     

硅基PZT压电功能结构研究

PZT压电薄（厚）膜是制备MEMS传感元件和执行元件重要的功能材料,对近年PZT薄（厚）膜在MEMS领域的研究现状进行了分析,提出了一种新型的双杯PZT/Si膜片式功能结构;采用有限元方法对双杯PZT/Si膜片进行了结构优化,得到PZT和上、下硅杯的结构优化值为DPZT: D1:D2 =0.75:1.1:1;一阶模态谐振频率为13.2KHz;以氧化、双面光刻、各向异性刻蚀,以及PZT厚膜丝网印刷等工艺技术制作了双杯硅基PZT压电厚膜膜片,该膜片具有压电驱动功能。双杯PZT/Si膜片式功能结构的MEMS技术兼容性好,对芯片内其它元件或电路的影响小,适合作为MEMS片内执行元件的驱动机构。     

Structural analyses of Nd-doped CeO2 thin films deposited by pulsed laser deposition

CeO₂ thin films doped with neodymium oxides for application to gas sensors have been elaborated by the pulsed laser deposition technique. The films were deposited on orientated Si (100) substrates with variable deposition times (t = 90, 180 and 360 s) and molar fractions of Nd₂O₃ (0, 6.5, 15, 21.5 and 27 at.%). The resulting Nd–CeO₂ thin films were characterized by means of X‐ray diffraction analysis, scanning electron microscopy and transmission electron microscopy equipped with EDS (Energy Dispersive Spectrometer) microanalysis. From X‐ray diffraction analyses, it is clearly established that the texture is modified by Nd additions. The preferred (111) orientations of the CeO₂ crystals change into the (200) orientation. The morphology of the CeO₂ grains changes from triangles, for pure CeO₂ thin films, to spherical grains for Nd‐doped films. In addition, cell parameter analyses from X‐ray diffraction data show that a partial chemical substitution of Ce by Nd should occur in the face‐centred cubic lattice of ceria: this should give rise to Ce_1‐xNd_xO_2?z phases with oxygen non‐stoichiometry.     

金刚石表面的膜层沉积处理及其感应钎焊的研究

将热丝化学气相沉积(HFCVD)处理的金刚石作为磨料感应钎焊制作金刚石工具。HFCVD处理试验中,混合气为H2和CH4(体积流量比为100∶1.5),炉内压力为2.0kPa,700℃下处理45min后,在金刚石表面沉积了一层非晶碳膜。感应钎焊HFCVD处理的金刚石显示,出露部分的金刚石棱边能保持良好的锋利性;浸没在钎料层下面的金刚石表面形成了有均匀孔隙且形状不规则的铬碳化合物,液态钎料充填这些化合物孔隙之间,能够增强钎料对金刚石的把持强度。3种金刚石磨料感应钎焊制作的金刚石磨盘的高效重负荷石材磨削试验显示,HFCVD处理的金刚石的整体破碎率和脱落率最低。     

微/纳米CVD金刚石涂层的制备

使用热丝化学气相沉积(HFCVD)装置,在以WC - CO硬质合金为衬底,采用调节涂层生长参数,制备出性能优良的微/纳米金刚石涂层.用SEM,AFM,Raman表征微观结构和表面品质.采用压痕法评估涂层的结合性能,并与微米金刚石涂层、纳米金刚石涂层进行比较.结果显示,当生长气压由3.3 kPa降为1.0 kPa时,底层的微米级晶粒逐渐被上层纳米级晶粒覆盖,并且涂层表面显露出纳米金刚石涂层特性.在结合性能实验中也指出,微/纳米金刚石涂层的结合性能比纳米金刚石涂层要优异.     

Investigation of thermoelectric silicide thin films by means of analytical transmission electron microscopy

The microstructure of rhenium silicide thin films and its progress by annealing were investigated by means of analytical transmission electron microscopy. Sputtered amorphous films were characterised by analysis of the radial distribution function (RDF). The position of the first maximum of RDF represents the most probable distance between neighbouring atoms and decreases from 2.75 to 2.62 A in films with an increasing Si-content from 60 to 75 at%. This decrease correlates with the change of the temperature coefficient (TC) of the electrical resistivity. During in situ annealing, the formation of nanocrystals in films with different Si-contents was observed. In thin films with 64 at% the quantity of nanocrystals increases after 1 h at 900 K whereas their sizes remain unchanged. The crystallisation in Re-rich thin films proceeds lower and produces larger crystals than in films near to the ReSi1.75 stoichiometry. Sputtered epitaxial ReSi1.75 films on Si (1 0 0) consist of crystals with nanometer size and an azimuthal torsion of 45 degrees.     

铝过渡层沉积CVD金刚石涂层的研究

使用Murakami溶液和王水预处理高钴硬质合金刀片,并用直流磁控溅射(DCS)技术在此硬质合金上溅射铝过渡层,在热丝化学气相沉积(HFCVD)设备里沉积金刚石薄膜;分析了金刚石形核机理,并利用SEM以及Raman等方法表征试样。结果表明:与未溅射过渡层的样品相比,在过渡层上的金刚石形核密度更高,金刚石颗粒尺寸更加细小。     

Microtribological behaviour of thin DLC films using different testing methods

To enhance the lifetime and reliability of microcomponents, thin microtribological films are applied to microparts. With reduction of the component size, investigation methods for tribological testing must be adapted. This paper studies the microtribological behaviour of thin diamond‐like carbon (DLC) films using different testing methods. To tie in with macroscopic results, to determine friction we used the well‐known pin‐on‐disc test with spherical surfaces of 10 mm diameter under a typical load of 3 N. For investigations of the behaviour under single asperity contact, Atomic Force Microscope (AFM) methods with applied loads of a few hundred micronewtons were used. Investigations on thin DLC films showed that the friction coefficient under single asperity contact is strongly dependent on the applied load and the resulting contact area. Especially for thin films (up to a few hundred nanometres) the friction coefficient is influenced by the substrate material. With decreasing substrate Young's modulus the friction coefficient also decreases. On the other hand, an increase in the abrasive wear resistance was observed using soft substrate materials. In this paper we show that the friction coefficient was also reduced by a simple surface structure. For investigations we used photolithography to create concentric circles in different substrates. This resulted in a behaviour like riding on rails for the pin‐on‐disc test. Depending on the tribological pairing the friction coefficient was reduced to more than 50% of the original value. Copyright © 2006 John Wiley & Sons, Ltd.