溶胶-凝胶法制备ZnO基稀释磁性半导体薄膜

用溶胶－凝胶法制备了具有良好光学性质和C轴取向的ZnO:Fe薄膜。ZnO:Fe薄膜具有尖锐的带边发光，禁带宽度约为3.3eV，半高宽13nm。磁性测量表明，ZnO：Fe薄膜在室温下具有铁磁性，饱和磁化强度约为10^-3emu量级，矫顽力为30奥斯特（Oe)。     

溶胶-凝胶法制备Fe掺杂ZnO基稀磁半导体的结构与磁性

采用了添加抗坏血酸作为还原剂的改良溶胶-凝胶法制备了单相的稀磁半导体Zn1-xFexO(x=0.01、0.05、0.07、0.10) 粉末.X射线衍射谱(XRD)显示所有Zn1-xFexO样品在室温下都呈现出P63mc的六角晶格结构,同时单位晶胞体积呈现出随着Fe离子掺杂量的提高而增大的趋势.X射线光电子能谱(XPS)证明在Zn1-xFexO晶格中的掺杂元素Fe主要以Fe2 的方式存在.比饱和磁化强度(σs)随Fe掺杂量的增加而提高,并在样品Zn0.90Fe0.10O中获得最大值0.43Am2/kg,定性地解释了铁磁性的来源.     

溶胶-凝胶法制备Cu/ZnO的室温铁磁性

为研究稀磁性半导体的室温铁磁性来源,采用溶胶-凝胶法制备了Cu掺杂ZnO半导体粉末。X射线衍射光谱显示Cu在ZnO中的固溶度小于0.08 (摩尔比);透射电子显微镜分析显示颗粒尺寸较为均匀,呈单结晶态;振动样品磁强计测试表明,Cu/ZnO具有室温铁磁性。由于Cu本身不具有任何磁性,样品的铁磁性来源为氧化锌晶格中的缺陷与Cu2+离子之间的交换作用。     

磁性复合材料的制备技术与研究进展

磁性复合材料是当前最活跃的新型材料,综述了当前磁性复合材料的研究现状,重点阐述了磁性复合材料的制备技术和特点,以及国内外最新的研究成果,并展望了其应用前景.     

铝离子掺杂氧化锌薄膜的溶胶-凝胶法制备及性能

运用室温溶胶-凝胶技术和热处理工艺,在载玻片上制备了铝离子掺杂的ZnO薄膜.采用X射线衍射(XRD)和扫描电子显微镜(SEM)对薄膜的成分、结构和形貌进行了表征;采用紫外-可见光分光光度计对薄膜的透光性能进行了研究.结果表明,所制备的氧化锌薄膜为六方纤锌矿结构,沿C轴方向择优生长;铝离子的掺杂没有改变氧化锌的基本结构,所掺杂的铝离子为取代锌离子的替位掺杂;热处理后,氧化锌颗粒为六角形针(柱)状形貌;随着热处理温度的升高,薄膜的透光率增大;经600℃热处理后随着铝离子掺杂浓度的增加,薄膜的透光率先增大后减小,当铝离子掺杂浓度为2%时透光率最大;当铝离子掺杂浓度较大时,晶格畸变的影响使薄膜的透光率减小.当溶胶浓度为0.6mol/L、铝离子掺杂浓度为2%和热处理温度为600℃时,所制备薄膜的质量和性能最好.     

静电纺丝法制备磁性纳米纤维材料的研究进展

磁性纳米纤维材料不但具有普通纳米粒子的特殊效应,而且具有独特的形状各向异性和磁晶各向异性效应,在高密度磁记录、电磁波吸收、催化剂、医学和生物功能材料等领域具有重要应用。静电纺丝技术已被证明是一种制备纳米纤维最简单有效的方法。结合最新文献,重点阐述了以静电纺丝技术为主的磁性纳米纤维制备工艺以及不同工艺对磁性纳米纤维的形貌和性能的影响。简要介绍了磁性纳米纤维的应用,指出了发展新型结构可控磁性纳米纤维材料、研究其定向排布及组装技术、开发其在各领域的实际应用是未来主要的研究方向。     

溶胶-凝胶法制备超细Sr_2FeMoO_6及磁性能研究

以活性炭为还原剂,采用溶胶-凝胶法制备双钙钛矿结构巨磁电阻材料Sr_2FeMoO_6.经XRD物相分析证明,产品为四方晶系Sr_2FeMoO_6,空间群为I4/mmm,晶胞参数:a=0.558nm,c=0.7882nm.SEM形貌分析表明,粉体颗粒分散性较好,粒子基本为球形,尺寸在100nm以下.磁性能测试结果表明,样品的居里温度高于室温,1T磁场下室温饱和磁化强度为13.59A·m~2·kg~(-1).     

掺铝氧化锌粉末的制备及其性能研究

采用溶胶凝胶燃烧合成法制备了ZAO(掺铝氧化锌)粉末,借助于DSC-TG、XRD、SEM、反射率测试、红外辐射率测试对制得的ZAO粉末的形貌、微观结构、激光吸收性能和红外辐射性能进行表征.研究结果表明,制备的ZAO粉末属于六方晶系纤锌矿结构.XRD分析表明煅烧温度提高到700℃后,ZA0的晶相形成的更好.SEM图中可以看出,随着Al离子的掺杂量增加,ZAO粉末的粒径越来越小,形状越来越不规则.反射率图谱表明,在900～1200nm波长范围,存在较强的激光吸收.红外辐射率测试表明ZAO粉末具有中等红外辐射率.     

美利用氧化锌和钴混合物开发新半导体材料

人们在打开计算机电源开关后，并不能马上开始工作，需要等一小会儿以便让计算机运行存储在硬盘上的操作系统、杀毒软件、防火墙和其他程序。也许在不久的将来人们按下电源开关按钮便可开始工作。如果人们有能力操纵电子的磁性和控制电子电荷流，就有望开发出一种电子器件，实现计算机即开即用，这是正在兴起的“自旋电子学”的基础。过去，开发这样的装置所遇到的最大障碍是找不到非易失性的磁性半导体材料。人们找到的能够满足要求的材料必须在零下200℃时才能正常工作。     

New semiconductor materials for magnetoelectronics at room temperature

Most of the semiconductor materials are diamagnetic by nature and therefore cannot take active part in the operation of the magneto electronic devices. In order to enable them to be useful for such devices a recent effort has been made to develop diluted magnetic semiconductors (DMS) in which small quantity of magnetic ion is introduced into normal semiconductors. The first known such DMS are II-VI and III-V semiconductors diluted with magnetic ions like Mn, Fe, Co, Ni, etc. Most of these DMS exhibit very high electron and hole mobility and thus useful for high speed electronic devices. The recent DMS materials reported are (CdMn)Te, (GaMn)As, (GaMn)Sb, ZnMn(or Co)O, TiMn(or Co)O etc. They have been produced as thin films by MBE and other methods. This paper will discuss the details of the growth and properties of the DMS materials and some of their applications.     

A semiconductor whispering-gallery-mode laser with ring cavity operating at room temperature

Whispering gallery mode (WGM) semiconductor lasers with ring and disk cavities (outside diameters 300, 200, and 100 μm) operating in a pulsed regime at room temperature on a λ = 2.4 μm wavelength have been created. A comparative study of the spectral and threshold characteristics of these lasers showed that ring lasers operate, like those with the disk cavities, on WGMs. The level of spontaneous emission in the ring lasers is lower by almost an order of magnitude than that in the disk lasers, which is due to the absence of recombination in the central part of the cavity. The threshold current density in ring lasers is slightly greater than that in the disk lasers, which is related to an increase in the current density at the edges of both cavities and to the appearance of surface leak currents on the inner surface of the ring-shaped cavity.     

A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660?nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.     

Indium zinc oxide semiconductor thin films deposited by dc magnetron sputtering at room temperature

Amorphous indium zinc oxide (IZO) thin films were prepared on glass substrates by dc magnetron sputtering at room temperature. The resistivity of IZO films could be controlled between 3.8 × 10⁻³ and 2.5 × 10⁶ Ω cm by varying the oxygen partial pressure during deposition, while keep the average transmittance over 83%. With IZO films as channel layers, whose surface root-mean-square roughness was less than 1 nm, thin film transistors were fabricated at room temperature, showing enhanced mode operation with good saturation characteristics, mobility of 5.2 cm² V⁻¹ s⁻¹, threshold voltage of 0.94 V and on/off ratio of ∼10⁴.     

A room temperature chemical route to nanocrystalline PbS semiconductor

Nanocrystalline PbS was prepared in glycerin with the use of Pb(OAC)₂·3H₂O and CS₂ as source materials at room temperature. The final product was characterized by X-ray diffraction (XRD) pattern, transmission electron microscopy (TEM) and X-ray photoelectron spectrum (XPS). TEM showed the particles' size is in the range of 5–25 nm. The chemical mechanism for the formation of PbS in this system is discussed.     

Optimization of a magnetic refrigerator at room temperature for air cooling systems

The purpose of this study is to understand the optimum operating condition of magnetic refrigerator at room temperature for direct air-cooling. The basic components of the target system are a magnetic circuit including two permanent magnets, a test section, an air blower, and an associated instrumentation. The test section consists of 10 test cells which enclose gadolinium chips as a magnetic working substance in a prescribed packing rate. In order to change the applied magnetic field from 0 to 0.9 T, the magnetic circuit is installed on an electric slider which generates reciprocating motion. The system performances are widely investigated both experimentally and analytically for the variety of conditions such as a volumetric flow rate of air, a packing length of magnetic working substance, and a heat exchange cycle. The results reveal that the present magnetic refrigerator has a maximum value of the cooling rate in an appropriate operating condition.     

Analysis of room temperature magnetic regenerative refrigeration

Results of a room temperature magnetic refrigeration test bed and an analysis using a computational model are presented. A detailed demonstration of the four sequential processes in the transient magnetocaloric regeneration process of a magnetic material is presented. The temperature profile during the transient approach to steady state operation was measured in detail. A 5 °C evolution of the difference of temperature between the hot end and the cold end of the magnetocaloric bed due to regeneration is reported. A model is developed for the heat transfer and fluid mechanics of the four sequential processes in each cycle of thermal wave propagation in the regenerative bed combined with the magnetocaloric effect. The basic equations that can be used in simulation of magnetic refrigeration systems are derived and the design parameters are discussed.     

室温磁制冷回热器数值模拟

介绍了一种磁制冷回热器的数值计算模型,不仅适用于匀速流,也适用于正弦流.该模型是基于控制容积法计算的一维周期流动模型,并对常规回热器内填料能量控制方程进行了修正,考虑了磁性材料磁热效应的影响,相当于添加内热源.计算分析了某些特征参数变化对制冷性能的影响,给出的部分模拟结果为后续实验台的改造提供参考.     

Fluid choice and test standardization for magnetic regenerators operating at near room temperature

Numerical simulations are performed to investigate the performance of an active magnetic regenerator (AMR) operating near room temperature. A two-dimensional porous model is established to analyze the impact different heat transfer fluids (HTFs) have on the performance of the AMR. The internal temperature distribution and cooling capacity of the system are analyzed and the influence of the HTF discussed. The simulation results show that when mercury is substituted in place of water as the HTF, the cooling capacity can be enhanced by nearly 600%. A fluid with high conductivity, high density, and low specific heat is most suitable for use as the HTF. Furthermore, as the environmental conditions have a great impact upon the performance of the AMR, three feasible methods of standardization testing are proposed. These involve: the evaluation index under fixed test environment conditions, a maximum exergy method, and a maximum specific exergy method around the Curie temperature.     

Review on research of room temperature magnetic refrigeration

Room temperature magnetic refrigeration is a new highly efficient and environmentally protective technology. Although it has not been maturely developed, it shows great applicable prosperity and seems to be a substitute for the traditional vapor compression technology. In this paper, the concept of magnetocaloric effect is explained. The development of the magnetic material, magnetic refrigeration cycles, magnetic field and the regenerator of room temperature magnetic refrigeration is introduced. Finally some typical room temperature magnetic refrigeration prototypes are reviewed.