Solid-state polymer light-emitting electrochemical cells

Solid-state polymer light-emitting electrochemical cells have been developed using thin films of conjugated polymers blended with solid electrolytes. The cells contain three parts: the polymer blend films as the active medium, and two contact electrodes: indium-tin oxide and aluminum. When externally biased, the conjugated polymers are p-doped and n-doped on opposite sides of the polymer layer, and a dynamic light-emitting p-n junction is formed between the doped regions. The admixed solid electrolyte provides the dopant counterions and the ionic conductivity necessary for the doping. The p-n junction is dynamic and reversible, with an internal built-in potential close to the bandgap of the redox-active conjugated polymers. Orange, green and blue lights emitted from the p-n junction have been obtained with turn-on voltage less than 3 V and external quantum efficiency higher than 2% photons/electron. In addition, a two-color light-emitting electrochemical cell has also been fabricated based on a bilayer structure consisting of two different luminescent polymers. The light-emitting p-n junction can be switched from one layer to another under different bias conditions.     

Large-scale syntheses of uniform ZnO nanorods and ethanol gas sensors application

Uniform ZnO nanorods with a gram scale were prepared by a low temperature and solution-based method. The samples are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and photoluminescence (PL). The results showed that the sample had uniform rod-like morphology with a narrow size distribution and highly crystallinity. Room-temperature PL spectra of these nanorods show an exciton emission around 382 nm and a negligible deep level emission, indicating the nanorods have high quality. The gas-sensing properties of the materials have been investigated. The results indicate that the as-prepared nanorods show much better sensitivity and stability. The n-type semiconductor gas sensor exhibited high sensitivity and fast response to ethanol gas at a work temperature of 400 °C. ZnO nanorods are excellent potential candidates for highly sensitive gas sensors and ultraviolet laser.     

碳热法合成具有蓝光发射特性的氧化镓纳米线、纳米带和纳米片

利用碳纳米管通过碳热法合成了氧化镓纳米线、纳米带和纳米片。采用扫描电镜和透射电镜对其进行了形态和结构表征。合成的氧化镓纳米结构是单晶体。室温光致发光谱分析发现，氧化镓纳米晶在蓝光区域487nm处产生明显的发射峰。     

Ag+掺杂ZnWO4纳米棒的微波水热法合成及光催化性能

以硝酸锌(Zn(NO3)2·6H2O)、和钨酸钠(Na2WO4·2H2O)作为起始反应物,利用微波水热法在200℃下合成纳米棒状钨酸锌。利用X-射线粉末衍射、场发射扫描电子显微镜、透射电子显微镜及能谱成分图谱等分析手段对纳米棒状钨酸锌粉体进行表征,并对不同Ag+掺杂量的ZnWO4纳米棒的光催化性能进行了研究。结果表明:Ag+成功的掺入ZnWO4纳米棒中;随着Ag+掺杂量的增加ZnWO4纳米棒的颗粒尺寸也不断增大;Ag+掺杂量2%时纳米棒状钨酸锌粉体的光催化性能最优,但是随着掺杂量的逐渐增加光催化性能反而降低。     

Synthesis of ZnO nanorods and their optical absorption in visible-light region

Single crystalline ZnO nanorods were prepared by the hydrothermal method with synthesized ZnCl2·4Zn(OH)2 as the precursor. Morphologies of the nanorods were controlled by various reaction conditions with cetyltrimethylammo-nium bromide (CTAB) as the modifying agent. The nanorods were characterized by XRD, TEM, UV-Vis spectra, and IR spectra. The microstructure of holes in nanosize was observed on the surface of the nanorods. The UV-Vis spectra indicate that the as-prepared ZnO nanorods have absorption of visible-light as well as ultraviolet-light. Therefore, these nanorods may be good candidates for visible-light photocatalysis materials from the viewpoint of practical applications. The reason for visible-light absorption was discussed in this article.     

自支撑GaN厚膜制备及其光学性能研究

采用镀Ti插入层在氢化物外延设备中制备了高质量自支撑GaN厚膜。X射线衍射测试发现(0002)峰摇摆曲线的半高宽为260 arcsec;5 K下样品带边发光峰的半高宽为3 meV,室温下样品的带边发光峰也只有20 meV,并且在室温的PL谱中观察不到黄光带;扫描电子显微镜观察显示,腐蚀后的自支撑GaN厚膜表面有位错延伸形成的六角坑,并估算出样品位错密度约为2.1×l07 cm-2。这些结果说明镀Ti插入层有助于提高GaN外延层的晶体质量。通过Raman和低温荧光分析,可以看出自支撑GaN厚膜表面应力已经完全释放。研究了不同温度下样品的荧光特性,证明得到的无应力自支撑GaN厚膜具有很好的晶体质量和光学质量     

Si（111）衬底上生长GaN晶环的研究

利用热壁化学气相沉积在Si(111)衬底上获得GaN晶环，采用扫描电镜(SEM)、选择区电子衍射(SAED)、X射线衍射(XRD)，光致发光(PL)谱和傅里叶红外吸收谱(FTIR)对晶环的组成、结构、形貌和光学特性进行分析。初步结果证明：在Si(111)衬底上获得择优生长的六方纤锌矿结构的GaN晶环。SEM显示在均匀的薄膜上出现直径约为10μm的5品环，由XRD和SAED的分析证实晶环呈六方纤矿多晶结构，FTIR显示GaN薄膜的主要成分为GaN，同时含有少量的C污染，PL测试表明晶环呈现不同于GaN薄膜的发光特性。     

Growth and optical properties of gallium nitride nanowires produced via different routes

Several vapor phase processes for the preparation of GaN nanowires, such as chemical vapor deposition (CVD), direct reaction (DR), and hydride vapor phase epitaxial growth (HVPE), have been previously reported. To determine the most appropriate route for fabrication and engineering of GaN nanowires, we prepared nanowires via the three aforementioned routes and characterized their microstructures and photoluminescence (PL) properties. All prepared nanowires were single-crystalline, whowing well-defined crystal structure in X-ray diffraction and transmission electron microscopic analyses. However, high-quality nanowires could most readily be obtained by DR. Large-scale and selective area growth of nanowires could most readily be achieved by CVD and HVPE. PL spectra for the nanowires prepared by HVPE showed a red-shifted center wavelength and wider full width-half maximum (FWHM) value as compared to those prepared by DR or CVD. This indicates the presence of unknown impurities and/or defects in the nanowires prepared by HVPE. Our results indicate that high-quality nanowires can be prepared by DR and CVD, while large-scale selective growth can be achieved by CVD and HVPE.     

钽催化磁控溅射法制备GaN纳米线

利用磁控溅射技术通过氮化Ga2O3/Ta薄膜,合成大量的一维单晶纤锌矿型氮化镓纳米线.用X射线衍射、扫描电子显微镜、高分辨透射电子显微镜,选区电子衍射和光致发光谱对制备的氮化镓进行了表征.结果表明;制备的GaN纳米线是六方纤锌矿结构,其直径大约20～60 nm,其最大长度可达10 μm左右.室温下光致发光谱测试发现363 nm处的较强紫外发光峰.另外,简单讨论了氮化镓纳米线的生长机制.     

Synthesis and photoluminescence of wurtzite CdS and ZnS architectural structures via a facile solvothermal approach in mixed solvents

CdS and ZnS nanostructures with complex urchinlike morphology were synthesized by a facile solvothermal approach in a mixed solvent made of ethylenediamine, ethanolamine and distilled water. No extra capping agent was used in the process. The structure, morphologies and optical properties of these nanostructures were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and photoluminescence (PL) spectroscopy. The as-synthesized urchinlike architectures were composed of nanorods with wurtzite structure. The preferred growth direction of nanorods was found to be the [0 0 1] direction. The PL spectrum of CdS nanostructures exhibited a highly intense red emission band centered at about 706 nm. On the basis of the experimental results, a possible growth process has been discussed for the formation of the CdS and ZnS urchinlike structures.     

Microstructure and properties of SiO2 matrix reinforced by BN nanotubes and nanoparticles

In order to overcome intrinsic brittleness and poor mechanical properties of SiO₂, two kinds of hexagonal boron nitride (h-BN) (boron nitride nanotubes (BNNTs) and boron nitride nanoparticles (BNNPs)) were employed to reinforce SiO₂ matrix. The mechanical properties, relative density and dielectric constant of the composites were investigated detailedly. Compared to the monolithic SiO₂, 5 wt% BNNTs/SiO₂ and 5 wt% BNNPs/SiO₂ composites exhibited excellent mechanical properties and low dielectric constant. Furthermore, phase composition and microstructure of the composites were analyzed thoroughly by X-ray diffraction, transmission electron microscopy, and field emission scanning electron microscopy.     

Phase evolution of tantalum nitride and tantalum carbide films with PBII parameters

Tantalum nitride and tantalum carbide films were fabricated using magnetron sputtering of tantalum followed by nitrogen and carbon plasma-based ion implantation (N-PBII and C-PBII). The phase evolution and morphology of the films were studied using glancing angle X-ray diffraction (GXRD) and transmission electron microscopy (TEM). It was found that the main phase in the tantalum nitride films was crystalline TaN_0.1 whose grain size increases with increasing implantation voltage and phase content increases with increasing implantation dose. In the tantalum carbide film, the main phase was Ta₂C. TaC phase also appeared as the implantation dose increased. XRD results from various glancing angles show that the phases with high nitrogen or carbon content, Ta₄N₅ and TaC, are present in the surface of the films. X-ray photoelectron spectra (XPS) from the tantalum carbide film reveal that the surface carbon content is higher than that of the inner film.     

Growth and optical properties of tetrapod-like indium-doped ZnO nanorods with a layer-structured surface

We report tetrapod-like indium-doped ZnO nanorods with a layer-structured surface, synthesized by a thermal vapor transport method. The high crystalline quality of the nanostructure sample obtained was confirmed by using X-ray diffraction, scanning electron microscopy and transmission electron microscopy. We carried out photoluminescence and photoluminescence excitation measurements to investigate the possible application of this indium-doped ZnO nanostructure in the field of optical devices. The photoluminescence exhibited an ultra strong visible wavelength emission with a peak intensity 300 times stronger than the band edge ultraviolet emission. In addition, a very slow decay of visible wavelength emission was revealed by time-resolved photoluminescence spectroscopy.     

Synthesis of one-dimensional GaN nanorods by Tb intermediate layer with different thicknesses

GaN nanorods were synthesized by magnetron sputtering and ammonification system, and the thickness of Tb intermediate layer was changed to study the effect on GaN nanorods. The resultant was tested by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) spectra. The results show that the thickness of Tb layer has an evident effect on the modality, quality, and luminescence properties of GaN nanorods. PL spectra at room temperature show a very strong emission peak at 368 nm and a weak emission peak at 387 nm, and the intensities of the peak for the produced samples reach the maximum when Tb layer is 20 nm. Finally, the optimal thickness of 20 nm of Tb intermediate layer for synthesizing GaN nanostructures is achieved.     

Coating of MgO nanorods with protective layers: Sputtering with a Si target, structure, and photoluminescence properties

We have synthesized MgO/SiO_x core-shell nanorods by employing a sputtering technique with a Si target, for sheathing the MgO nanorods. The samples were characterized by X-ray diffraction, scanning electron microscope, transmission electron microscope and photoluminescence (PL) spectroscopy. The SiO_x shell was close to amorphous, whereas the MgO core was crystalline with a cubic structure. The shape and peak positions of the PL spectrum were not changed by the coating.     

Two-phase nanostructured carbon nitride films prepared by direct current magnetron sputtering and thermal annealing

Two-phase nanocrystalline/amorphous carbon nitride films have been successfully prepared by direct current magnetron sputtering and the following thermal annealing at 1000 K. The analysis of Raman spectra supports the existence of sp³-hybridized C-N bonds in the films. The results obtained from X-ray photoelectron spectroscopy (XPS) indicate that the fractional concentration of the tetrahedral bonded crystalline phase in the carbon nitride films is 40%, and the ratio of N:C in the tetrahedral bonded crystalline phase is 1.12:1. Transmission electron microscopy (TEM) investigations indicate that the films contain a very dense and homogenous distribution of nanocrystalline grains, and the lattice parameters of these crystalline phases are in good agreement with the theoretically predicted β-C₃N₄ lattice constant. The films deposited on Si substrates have a high hardness of 40 GPa, and the correlations between the microstructure of the films and their mechanical properties are discussed.     

Fabrication of hexagonal gallium nitride films on silicon (111) substrates

Hexagonal gallium nitride films were successfully fabricated through ammoniating Ga2O3 films deposited on silicon (111) substrates by electrophoresis. The structure, composition, and surface morphology of the formed films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The measurement results reveal that the polycrystalline GaN films with hexagonal wurtzite structure were successfully grown on the silicon (111) substrates. Preliminary results suggest that varying the ammoniating temperature has obvious effect on the quality of the GaN films formed with this method.     

Microstructure of chromium nitride layer on stainless steel for polymer electrolyte membrane fuel cell separator

The microstructure of the chromium nitride layer formed on 316L Stainless Steel (SS) by electroplating Cr and subsequent thermal nitriding was investigated by electron microscopy. Thermal nitriding was carried out at a nitrogen partial pressure of 100 torr at 1100 °C for 2 h. The X-ray Diffraction (XRD) patterns showed that the structure of electroplated chromium was not crystalline and that the nitrided layer was composed of only hexagonal Cr₂N phase nitride. The nitride layer showed uniform and columnar-shaped grains of chromium nitride and contained many micro-pores that may have formed due to the volume difference between the amorphous chromium and the crystalline chromium nitride. Chromium oxide was also observed in the nitride layer. It was discovered that the number of micro-pores and oxide particles needs to be decreased in order to improve the interfacial contact resistance.     

CdS纳米棒的化学浴沉积法制备和机理研究(英文)

采用化学浴沉积法制备了高纵横比的CdS纳米棒。二苯硫腙(DPTA)作为有机添加剂用于合成CdS纳米棒。用X射线衍射(XRD)和透射电子显微镜(TEM)表征样品的结晶性能和微观结构。XRD结果表明,样品中同时存在六角相和立方相,当pH值为10.5时,六角相CdS的(111)峰的衍射强度最大,同时出现立方相CdS。TEM结果显示,可以通过调节pH值控制CdS纳米晶的形貌,当pH值为10.5时,CdS纳米棒的纵横比最大,直径约50nm,长约3μm。对CdS纳米晶电学性能的研究表明,与用PVA作为添加剂和在纯乙醇中制备的CdS纳米棒相比,用DPTA作为添加剂制备的CdS纳米棒具有更低的电阻值。这是因为DPTA分子中存在2个大π键,有利于电子的传输。还讨论了CdS纳米棒的生长机理和DPTA修饰CdS纳米棒中的电子转移。     

Studies on sensitivity of porous silicon surfaces to environmental gases

We have studied the electrophysical properties of porous silicon p-n junction in an atmosphere of various gases: moisture, ammonia, benzene, acetone, and ethanol. The high sensitivity of ac conductivity to the polar gas molecules is connected with an additional pathway through the opened surface of the p-n junction.