基于异变缓冲层与应变层超晶格的InP/GaAs异质外延

利用低压金属有机化学气相沉积技术, 开展InP/GaAs异质外延实验。由450 ℃生长的低温GaAs层与超薄低温InP层组成双异变缓冲层, 并进一步在正常InP外延层中插入In1-xGaxP/InP(x=7.4%)应变层超晶格。在不同低温GaAs缓冲层厚度、应变层超晶格插入位置及应变层超晶格周期数等条件下, 详细比较了InP外延层(004)晶面的X射线衍射谱, 还尝试插入双应变层超晶格。实验中, 1.2 μm和2.5 μm厚InP外延层的ω扫描曲线半峰全宽仅370 arcsec和219 arcsec; 在2.5 μm厚InP层上生长了10周期In0.53Ga0.47As/InP 多量子阱, 室温PL谱峰值波长位于1625 nm, 半峰全宽为60 meV。实验结果表明, 该异质外延方案有可能成为实现InP-GaAs单片光电子集成的一种有效途径。     

Self-organization phenomenon of strained InGaAs on InP (311) substrates grown by metalorganic vapor phase epitaxy

We have demonstrated that a self-organization phenomenon occurs in strained InGaAs system on InP (311) substrates grown by metalorganic vapor phase epitaxy. This suggests that a similar formation process of nanocrystals exists not only on the GaAs (311)B substrate but also on the InP (311)B substrate. However, the ordering and the size homogeneity of the self-organized nanocrystals are slightly worse than those of the InGaAs/AlGaAs system on the GaAs (311)B substrate. The tensilely strained condition of a InGaAs/InP system with growth interruption in a PH₃ atmosphere reveals a surface morphology with nanocrystals even on the InP (100) substrate. It was found that strain energy and high growth temperature are important factors for self-organization on III-V compound semiconductors. Preliminary results indicate that the self-organized nanostructures in strained InGaAs/InP systems on InP substrates exhibit room temperature photoluminescent emissions at a wavelength of around 1.3 p.m.     

Structural and optical characterization of InP/GalnP islands grown by solid-source MBE

We report on the growth of InP/GalnP islands on GaAs substrates by solidsource molecular beam epitaxy. It is shown by reflection high energy electron diffraction and atomic force microscopy that a rapid change from a twodimensional to a three-dimensional growth mode occurs at about nominally 1.5 monolayers (MLs) InP. Transmission electron microscopy measurements demonstrate the coherent incorporation of InP islands in an GalnP matrix for nominally 2.5 MLs InP. The energy of the InP photoluminescence (PL) shifts to lower energies (100 meV) when the growth interruption time between the island and cap layer growth is increased from 1 to 300 s in case of nominally 3 MLs InP. Simultaneously, an increase of the PL linewidth is observed from 30 to 60 meV. Room temperature photoreflectance measurements on samples with various InP thickness have been performed. Compared to PL measurements, an additional feature in the photoreflectance spectra is observed for samples with more than 7 MLs InP, which is attributed to a transition between excited electron and hole states of the islands.     

MOCVD生长InGaAs/InP体材料研究

首先给出在InP衬底上利用MOCVD法生长InP、InGaAs的生长条件，而后分别给出了InP／InP的生长特性，InGaAs／InP的组份控制和生长特性及生长温度对InGaAs特性的影响。     

Reactions between Pd thin films and InP

The reactions between Pd thin films and (001) oriented InP have been studied in detail. Palladium was deposited on InP by electron beam evaporation to a thickness of 60 nm. Specimens were then annealed in vacuum at temperatures up to 500° C for as long as several days. An amorphous ternary phase (Pd≈₃InP) formed during deposition. During annealing, several crystalline ternary phases were detected. Pd₂InP and Pd₅InP were detected at lower annealing temperatures,i.e. from 225–275° C. Pd₂InP grew first, exhibiting an epitaxial relationship with InP, followed by preferred growth of Pd₅InP within the Pd₂InP layer. Both phases later decomposed (≈400° C) producing Pd₂InP(II), which also grew epitaxially on InP. At temperatures greater than 400° C, Pd₂InP(II) decomposed to Pdln and PdP₂, which were thermodynamically stable in contact with InP.     

Structural and optical characterization of self-formed GaP/InP quantum dots

By growing (GaP)_1.5(InP)_1.88 and (InP)_1.88(GaP)_1.5 short-period superlattices (the former material is the first layer on the GaAs (311) substrate) by gas source MBE, composition-modulated quantum dots were self-formed in both cases. The dot size is about 20 nm in GaP/InP and 22 nm in InP/GaP sample. The photoluminescence energy is higher for the GaP/InP sample, corresponding to the difference in the dot size. The photoluminescence decay time of the InP/GaP sample is less dependent on the emission wavelength and temperature than that of the GaP/InP sample.     

磷化铟的化学机械抛光技术研究进展

磷化铟单晶作为一种重要的外延层衬底材料被广泛应用于光电器件.衬底外延生长和电子器件制备要求磷化铟晶片表面具有极低的表面粗糙度、无表面/亚表面损伤和残余应力等,需对磷化铟晶片表面进行抛光加工,其表面质量决定了后续的外延层质量并最终影响磷化铟基器件的性能.综述了磷化铟晶体化学机械抛光(CMP)技术进展;介绍了磷化铟表面的化学反应原理、CMP去除机理;详细分析了磷化铟抛光液组分及pH值、抛光工艺参数(抛光压力、抛光盘转速、抛光垫特性、磨料种类、粒径及浓度)等对磷化铟抛光质量的影响;介绍了磷化铟抛光片的清洗工艺,并对磷化铟CMP的后续研究方向提出一些建议.     

Chlorine auto-doping by chloride vapor phase epitaxial growth of InP

Chlorine auto-doping phenomenon was found for the first time in InP epitaxial growth by using a PCl₃/InP/H₂ system. Chlorine atoms act as a donor in the epitaxial layer and the carrier concentration is dependent on the facet of InP substrate. The carrier concentration of the InP layer on ( 111)B facet was over 10³ times higher than that on (111)A substrate.     

InP衬底上Ga_(0.47)In_(0.53)As/InP液相外延生长

用液相外廷获得了与InP晶格匹配的Ga_(0.47),In_(0.53)As单晶外延层.本文叙述在(100)和(111)InP衬底上Ga_(0.47)In_(0.53)As/InP液相外延生长方法.用常规滑动舟工艺生长的这种外延层,其表面光亮,Ga的组分x=0.46～0.48,晶格失配率小于2.77×10~(-4),禁带宽度E_g=0.74～0.75eV.使用这种Ga_(0.47)In_(0.53)As/InP/InP(衬底)材料研制的长波长光电探测器,在波长为0.9～1.7μm范围内测出了光谱响应曲线,在1.55μm处呈现峰值.     

InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review

This paper reviews the rapid advancements being made in the development of high electron mobility transistors (HEMTs) on InP substrates for future sub-millimetre wave (30–300 GHz) and terahertz (300 GHz to 3.5 THz) frequency applications. The InP HEMTs exhibits outstanding 2-DEG properties in InAlAs/InGaAs heterostructure. This paper highlights the rapid growths in the developments of enhancement mode (E-Mode) and depletion mode (D-Mode) InP HEMTs over the last 40 years, the use of InP HEMTs for cryogenic applications, reliability issues and kink effects in InP HEMTs in detail and it also highlights the impact of geometrical dimensions and their scaling on the performance of InP HEMTs. Their uniqueness in terms of low noise, low power dissipation, high gain and high frequency of operation has fuelled the incorporation of InP HEMTs in a wide variety of applications such as high speed wireless and optical communication systems, sub-millimetre wave (S-MMW) and THz receivers and transmitters, radio astronomy and radiometry, flight communications and sensing applications, material spectroscopy, active and passive imaging applications, biomedical instrumentation applications and high speed ICs such as low noise amplifiers (LNAs), multiplier chains, switches, multiplexers and flip-flops.     

LPE growth of InP/InGaAs/InP DH wafers on (100) InP substrates

An InP/InGaAs/InP double heterostructure wafer is grown directly on a (100) InP substrate using very low temperature LPE growth. This crystal exhibits a thin transition layer at a InP-InGaAs interface because of dissolution of the ternary layer.     

Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors

Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnace.The optical characteristics of the Zn-diffused InP layer for the planar-type InGaAs/InP PIN photodetectors grown by molecular beam epitaxy (MBE) has been investigated by photoluminescence (PL) measurements.The temperature-dependent PL spectrum of Zn-diffused InP samples at different diffusion temperatures showed that band-to-acceptor transition dominates the PL emission,which indicates that Zn was commendably diffused into InP layer as the acceptor.High quality Zn-diffused InP layer with typically smooth surface was obtained at 580 ℃ for 10 min.Furthermore,more interstitial Zn atoms were activated to act as acceptors after a rapid annealing process.Based on the above Zn-diffusion technique,a 50μm planar-type InGaAs/InP PIN photodector device was fabricated and exhibited a low dark current of 7.73 pA under a reverse bias potential of-5 V and a high breakdown voltage of larger than 41 V (I ＜ 10 μA).In addition,a high responsivity of 0.81 A/W at 1.31 μm and 0.97 A/W at 1.55 μm was obtained in the developed PIN photodetector.     

InP中皮秒快速现象

利用测量瞬态反射谱的方法，探索了掺硫、铁、锌以及非掺杂的ＩｎＰ中载流子寿命，观察到非掺杂ＩｎＰ中载流子寿命最长约６０ｐｓ，掺锌ＩｎＰ中载流子寿命３８ｐｓ居中，掺硫和掺铁的寿命最短约１ｐｓ掺硫、铁和锌的ＩｎＰ中载流子寿命下降，是由于掺杂引入了复合中心，这一结果已被喇曼光谱所证实。     

(001)InP晶片[110]及[1 0]取向的最新判别法

本文提出了一种判别(001)晶片[110]和[ ]方向的简便方法。将去掉机械划痕的 InP 衬底放入浓 HCl,发现腐蚀出的条形沟方向是和片子的[110]方向一致。并对腐蚀沟的形成做了初步分析。     

磨料特性对InP晶片集群磁流变抛光效果的影响

对InP晶片进行了集群磁流变抛光实验,研究了抛光过程中磨料参数(类型、质量分数和粒径)对InP材料去除速率和表面粗糙度的影响。实验结果表明,InP晶片的去除速率随磨料硬度的增加而变大,表面粗糙度受磨料硬度和密度的综合影响;在选取的金刚石、SiC、Al2O3和SiO2等4种磨料中,使用金刚石磨料的InP去除速率最高,使用SiC磨料的InP抛光后的表面质量最好。随着SiC质量分数的增加,InP去除速率逐渐增加,但表面粗糙度先减小后增大。当使用质量分数4%、粒径3μm的SiC磨料对InP晶片进行抛光时,InP去除速率达到2.38μm/h,表面粗糙度从原始的33 nm降低到0.84 nm。     

基于硼酸溶液处理的GaAs/InP低温晶片键合技术

提出了一种基于硼酸溶液的GaAs/InP低温晶片键合技术,实现了GaAs/InP基材料间简单、无毒性的高质量、低温(290℃)晶片键合。GaAs/InP键合晶片解理截面的扫描电子显微镜(SEM)图显示,键合界面整齐,没有裂缝和气泡。通过键合过程,InP上的In0.53Ga0.47As/InP多量子阱结构转移到了GaAs基底上。X射线衍射及荧光谱显示,键合后的多量子阱晶体质量未变。二次离子质谱(SIMS)和Raman光谱图显示,GaAs/InP键合晶片的中间层厚度约为17 nm,界面处B元素有较高的浓度,键合晶片的中间层很薄,因此可以得到较好的电学、光学特性。     

非掺及掺铁磷化铟中的残留施主缺陷

用辉光放电质谱(GDMS)测量了原生液封直拉(LEC)磷化铟(InP)的杂质含量.利用霍尔效应测到的非掺LEC-InP的自由电子浓度明显高于净施主杂质的浓度.在非掺和掺铁InP中都可以用红外吸收谱测到浓度很高的一个氢-铟空位复合体施主缺陷.这个施主的浓度随着电离的铁受主Fe2+浓度的增加而增加.这些结果表明半绝缘体中氢-铟空位复合体施主缺陷的存在对铁掺杂浓度和电学补偿都有重要影响.     

掺铁浓度对半绝缘磷化铟的一些性质的影响

利用霍尔效应、电流-电压(I-V)、光致发光谱(PL)和光电流谱(PC)研究了不同掺铁浓度的半绝缘InP的性质.半绝缘InP的I-V特性明显地依赖于掺铁的浓度.掺铁的浓度也对半绝缘InP的光学性质和材料中缺陷的形成有影响.用PL和PC分别研究了掺铁半绝缘InP的禁带收缩现象和材料中的缺陷.     

掺铁浓度对半绝缘磷化铟的一些性质的影响

利用霍尔效应、电流-电压(I-V)、光致发光谱(PL)和光电流谱(PC)研究了不同掺铁浓度的半绝缘InP的性质.半绝缘InP的I-V特性明显地依赖于掺铁的浓度.掺铁的浓度也对半绝缘InP的光学性质和材料中缺陷的形成有影响.用PL和PC分别研究了掺铁半绝缘InP的禁带收缩现象和材料中的缺陷.     

Optical and crystallographic properties of high perfection InP grown on Si(111)

The growth of InP by low-pressure metalorganic chemical vapor deposition on vicinal Si(111), misoriented 3° toward [1-10], is reported. Antiphase domain-free InP is obtained without any preannealing of the Si substrate. Crystallographic, optical, and electrical properties of the layers are significantly improved as compared to the best reported InP grown on Si(001). The high structural perfection is demonstrated by a full width at half maximum (FWHM) of 121 arcs for the (111) Bragg reflex of InP (thickness = 3.4 μm) as obtained by double crystal x-ray diffraction. The low-temperature photoluminescence (PL) efficiency is 70% of that of homoepitaxially grown InP layers. The FWHM of the near-gap PL peak is only 2.7 meV as compared to 4.5 meV of the best material grown on Si(001). For the first time, InP:Fe layers with semi-insulating characteristics (ρ > 3 × 10⁷ Ω-cm) have been grown by compensating the low residual background doping using ferrocene. Semi-insulating layers are prerequisite for any device application at ultrahigh frequencies.