Argon irradiation damage at a Cu/Al2O3 interface for different alumina structures

The evolution of damages at a Cu/Al₂O₃ device interface after Ar⁺ irradiation, depending on alumina structure, and the effect of surface roughness on sputtering have been studied. A polycrystalline Cu/Al₂O₃ bilayer and polycrystalline Cu on amorphous alumina were irradiated with 400 keV Ar⁺ ion beam at doses ranging from 5 × 10¹⁶ to 10¹⁷ Ar⁺/cm² at room temperature. The copper layer thicknesses were between 100 and 200 nm. RBS analysis was used to characterize the interface modification and to deduce the sputtering yield of copper. The SEM technique was used to control the surface topography. A RBS computer simulation program was used to reproduce experimental spectra and to follow the concentration profile evolutions of different elements before and after ion irradiation. A modified TRIM calculation program which takes into account the sputtering yield evolution as well as the concentration variation versus dose gives a satisfactory reproduction of the experimental argon distribution. The surface roughness effect on sputtering and the alumina structure influence at the interface on mixing mechanisms are discussed.     

北京放射性核束装置在线同位素分离器的研制

北京放射性核束装置在线同位素分离器（BRISOL）采用100 MeV、200 μA回旋加速器提供的质子束打靶产生中、短寿命放射性核束,进行在线分析后供物理用户使用,其质量分辨率好于20 000。BRISOL装置现已建成,并开展了氧化镁、氧化钙靶的在线实验,在线产生了³⁷K⁺、³⁸K⁺、²⁰Na⁺、²¹Na⁺等多种放射性核束。本文详细介绍该装置的研制及运行情况。     

RBS analyses of xenon-irradiated Ti and TiN films

TiN films of 30–300 nm thickness, deposited onto stainless steel via magnetron sputtering, and 10 μm thick Ti foils were irradiated with 80–360 keV Xe⁺ ions at influences of φ = 10¹⁵–10¹⁷ ions/cm². The Xe content was depth-profiled by means of 900 keV He⁺⁺ Rutherford backscattering. Irradiations of films with a thickness exceeding the ion range (at 80 and 250 keV) led to saturation effects due to sputtering and outdiffusion from the near-surface region. The sputtering yields deduced at low Xe fluences were compared to calculations for mono-elemental and compound sputtering. Surface blistering was observed after 250 keV saturation implantation into Ti. For TiN layers with a thickness comparable to the ion range, precipitation of the mixing gas at the interface was observed which finally led to the destruction of the layers. The dependence of the Xe fraction accumulated in the interface is discussed in terms of thermal-spike calculations.     

Oxygen ion source with plasma cathode

An ion source with a plasma cathode has been developed for long lifetime use in ion implanters. In this ion source, a plasma cathode replaces the conventional metallic filament used in a Freeman-type ion source. This ion source consists of two compartments, namely a plasma generator and an ion source chambers interconnected by a tapered narrow duct. The pressure difference between the two parts, maintained by differential pumping, prevents the feed gas from flowing into the plasma generator. With any combination of an argon plasma cathode and a feed gas of either fluoride (AsF₅, PF₅) or oxygen, the lifetime was found to be more than 90 h with an extraction voltage of 40 kV and a correspoding ion current density of 20 mA/cm², and a considerable amount of As⁺, P⁺, O⁺, and O₂⁺ ions were observed in mass spectra.     

BRISOL钠同位素放射性核束的产生

北京放射性核束装置在线同位素分离器（BRISOL）采用100 MeV、200 μA回旋加速器提供的质子束打靶产生中、短寿命放射性核束,在线分析后供物理用户使用,其质量分辨率好于20 000。为开展²⁰Na核的奇异衰变特性研究,研制了氧化镁靶,并采用100 MeV质子束轰击氧化镁靶在线产生了^20～26Na⁺的钠同位素放射性核束。当质子束流强为8 μA时,²⁰Na⁺离子束的最大产额为2×10⁵ s^-1,²¹Na⁺离子束的最大产额为4×10⁸ s^-1。完成了北京放射性核束装置首个放射性核束物理实验,累计供束近200 h。     

钾/钠离子对水热合成铯榴石结构的影响

水热合成铯榴石能低温、晶格固化放射性废物¹³⁷Cs,但在放射性废物中Cs⁺通常与同族的K⁺/Na⁺共存,两者可能会对水热合成铯榴石组成和结构产生影响。基于此,参考铯榴石化学计量组成CsAlSi₂O₆,首先利用偏高岭土、纳米二氧化硅和CsOH•H₂O为原料水热合成了铯榴石。然后分别以不同摩尔质量的KOH或NaOH取代CsOH•H₂O,研究了K⁺/Na⁺对水热合成产物组成和结构的影响。结果表明,铯榴石水热晶化温度相对较低,产物微观下呈多晶微球态;K⁺与Cs⁺共存时,体系水热产物主要为铯榴石微球,微球尺寸随K⁺掺入比例的提高而增加,但K⁺主要存在于晶化程度较低的钾铝硅酸盐水合物中,并未参与铯榴石形成;Na⁺与Cs⁺共存时,体系水热产物主要由铯榴石和方沸石(NaAlSi₂O₆•H₂O)组成,Cs⁺和Na⁺各自存在于铯榴石或方沸石结构中。铯榴石相对较低的水热晶化温度及其结构中Cs⁺不能迁移和进行离子交换的特性,使得水热条件下K⁺/Na⁺不能进入先形成的铯榴石结构中的碱金属离子位点。尽管如此,K⁺或Na⁺的存在可降低铯榴石的水热晶化温度、促进铯榴石晶粒生长,且当K⁺或Na⁺与Cs⁺共存时,Cs⁺仍优先进入并稳定固化于铯榴石晶体结构中。     

盐酸溶液中Fe3+的水解聚合边界条件

为了模拟Pu⁴⁺水解聚合行为，采用动态光散射法研究了盐酸溶液中Fe³⁺水解聚合边界条件，并采用热力学软件HSC Chemistry 6.0模拟计算了水解聚合过程中一些热力学函数值的变化。结果表明：在Fe³⁺发生水解聚合反应时，溶液中的c₀(H⁺)、c(Fe³⁺)和温度之间存在一定的关联性，提高Fe³⁺浓度和升高温度会促进Fe³⁺水解聚合反应；聚合胶体粒径随着Fe³⁺浓度和温度升高而分布越广，且测得中值粒径在100~1 000 nm。     

盐酸溶液中Fe3+的水解聚合边界条件

为了模拟Pu⁴⁺水解聚合行为，采用动态光散射法研究了盐酸溶液中Fe³⁺水解聚合边界条件，并采用热力学软件HSC Chemistry 6.0模拟计算了水解聚合过程中一些热力学函数值的变化。结果表明：在Fe³⁺发生水解聚合反应时，溶液中的c₀(H⁺)、c(Fe³⁺)和温度之间存在一定的关联性，提高Fe³⁺浓度和升高温度会促进Fe³⁺水解聚合反应；聚合胶体粒径随着Fe³⁺浓度和温度升高而分布越广，且测得中值粒径在100~1 000 nm。     

Neutralization of keV Ne and Ar ions during grazing scattering from an Al(1 1 1) surface

Charge fractions after scattering of Ne⁺ ions, Ne⁰ atoms and Ar⁺ ions with keV energies under a grazing angle of incidence from an atomically clean and flat Al(1 1 1) surface are studied. For incoming Ne⁺ ions we observe defined ion fractions in the scattered beams, whereas for incident Ne⁰ atoms ion fractions are more than one order of magnitude smaller. This experimental result provides clear evidence for a survival of Ne⁺ ions over the whole scattering event. From the dependence of ion fractions on the perpendicular energy component we derive neutralization rates as function of distance from the surface. These rates compare well with recent theoretical calculations for the system He⁺–Al(1 1 1). For incident Ar⁺ ions no survival of ions is found and upper limits for the survival probability and lower limits for the neutralization rate are determined.     

Effects of ion irradiation on cobalt nanocomposite

The effects of ion irradiation of 3-dimensional arrays of Co nanoparticles were investigated. Arrays were obtained by electron beam deposition of 15 Co/SiO₂ bilayers 0.5 and 20 nm thick, respectively. The Co layers consist of Co nanoparticles 3.2 nm in diameter with a standard deviation of 16%. Irradiation was carried out using combinations of 150 kV Ar²⁺ and 90 kV Ar⁺ ion bombardments with a Ar⁺:Ar²⁺ fluence ratio of 1:4. The effects of ion irradiation were followed by Rutherford backscattering, measurements of hysteresis loops at 5 K and of temperature-dependent field-cooled (FC) and zero-field-cooled (ZFC) measurements of the magnetic susceptibility. A decrease of the peak temperature in the ZFC curve for displacements per atom (DPA) up to 1.1 was observed. Irradiation also induces progressively lower coercivity values. The Co particles showed a remarkable high resistance to ion irradiation, surviving damage up to 33 DPA.     

Effect of forming gas anneals on the photoluminescence from nanocrystalline silicon formed by Si implantation into SiO2 matrix

The blue region of the room temperature photoluminescence spectrum from Si nanocrystallites formed in SiO₂ by Si⁺ ion implantation has been observed for the first time after annealing in a forming gas (10% H₂ + 90% N₂) ambient. Thermally grown SiO₂ on Si substrates were implanted with a dose of 2 × 10¹⁷ Si⁺ cm⁻² at energies of 200 keV and 400 keV. For reference purposes, quartz silica was implanted also with the same dose of 200 keV Si⁺ ions. The implanted samples were annealed in nitrogen and forming gas at 900°C for 3 to 180 min. Both the SiO₂ and quartz samples exhibited luminescence at about 380 nm which was weak, but detectable, before annealing. During extended anneals in forming gas, the intensity increased by a factor of about 2 above that recorded after a nitrogen anneal but the peak position was unchanged. The intensity was greater in samples annealed in forming gas which is due to the additional hydrogen. It would seem that this blue luminescence originates from new luminescent centres in the matrix caused by the Si⁺ ion implantation.     

Temperature dependence of the chemical sputtering of amorphous hydrogenated carbon films by hydrogen

The temperature dependence of chemical erosion and chemical sputtering of amorphous hydrogenated carbon films due to exposure to hydrogen atoms (H⁰) alone and combined exposure to argon ions and H⁰ was measured in the temperature range from 110 to 950 K. The chemical erosion yield for H⁰ alone is below the detection limit for temperatures below about 340 K. It increases strongly with increasing temperature, goes through a maximum around 650–700 K and decreases again for higher temperatures. Combined exposure to Ar⁺ and H⁰ results in substantial chemical sputtering yields in the temperature range below 340 K. In this range the yield does not depend on temperature, but it increases with energy from about 1 (eroded carbon atoms per impinging Ar⁺ ion) to about 4 if the ion energy is increased from 50 to 800 eV. For temperatures above 340 K the measured erosion rates show the same temperature dependence as for the H⁰-only case, but they are higher than for H⁰-only. The difference between the Ar⁺ and H⁰ and the H⁰-only cases increases monotonically with increasing ion energy.     

新型铯选择性吸附剂的合成及性能

在金属镍粉表面原位合成了与金属基体紧密结合的亚铁氰化镍钾(KNiFC/Ni)吸附剂。经分析,其表面为面心立方晶系的亚铁氰化镍钾(KNiFC),厚度约为40~80nm,晶格参数为0.996 0nm,化学组成可表示为K1.4Ni1.3Fe(CN)6。结果表明:该吸附剂不水解,对137 Cs具有较高的吸附容量,非常快的吸附速率,很高的选择性,Cs的吸附分配系数(Kd)可达105 mL/g,即使在1.0mol/L NaNO3溶液中,Kd值也大于103 mL/g;该吸附剂吸附137 Cs为典型的离子交换机制,NH+4由于具有和Cs+相近的离子半径所以竞争最为强烈。本吸附剂有望用于含铯废液的处理及137 Cs的分离或提取。     

Structural study on uranyl ion in 1-butyl-3-methylimidazolium nonafluorobutanesulfonate ionic liquid

The structure of uranyl ion in 1-butyl-3-methylimidazolium nonafluorobutanesulfonate ionic liquid (BMINfO) has been studied with ¹H- and ³⁵Cl-NMR, Raman, and UV-visible spectroscopy. In the ¹H-NMR spectrum of the BMINfO solution prepared by dissolving UO₂(ClO₄)₂·5 6H₂O, the signal of H₂O coordinated to UO₂²⁺ was observed at 6.64 ppm at 50°C (free H₂O in BMINfO: 3.1 ppm at 50°C), suggesting that the uranyl species exists as the aquo complex, [UO₂(H₂O)_n]²⁺. The signal of the coordinated H₂O disappears with heating at 120°C for 3 h under vacuum. This indicates the dehydration from [UO₂(H₂O)_n]²⁺. On the other hand, the ³⁵Cl-NMR signal of ClO₄⁻ as the counter anion of UO₂²⁺ was observed at 1011 ppm (vs. Cl⁻ in D₂O) regardless of heating. This indicates that no ClO₄⁻ ion is in the first coordination sphere of UO₂²⁺. Furthermore, the UV-visible absorption spectra showed that the characteristic absorption bands due to UO₂²⁺ were sharpened with the dehydration. This means the simplification of the structure around UO₂²⁺. These results described above suggest that UO₂²⁺ in BMINfO has no ligand in its equatorial plane after the dehydration, i.e. UO₂²⁺ exists as a bare cation in this system.     

Ion beam induced nucleation in amorphous GaAs layers during MeV implantation

To investigate the nonlinear dose dependence of the thickness of the recrystallized layer during ion beam induced epitaxial recrystallization at amorphous/crystalline interfaces GaAs samples were irradiated with 1.0 MeV Ar⁺, 1.6 MeV Ar⁺ or 2.5 MeV Kr⁺ ions using a dose rate of 1.4 × 10¹² cm⁻² s⁻¹ at temperatures between 50°C and 180°C. It has been found that the thickness of the recrystallized layer reaches a maximum value at T_max = 90°C and 135°C for the Ar⁺ and Kr⁺ implantations, respectively. This means that the crystallization rate deviates from an Arrhenius dependence due to ion beam induced nucleation and growth within the remaining amorphous layer. The size of the crystallites depends on the implantation dose. This nucleation and growth of the crystallites disturbes and at least blocks the interface movement because the remaining surface layer becomes polycrystalline. Choosing temperatures sufficiently below T_max the thickness of the recrystallized layer increases linearly with the implantation dose indicating that the irradiation temperature is too low for ion induced nucleation.     

Z variations in yields of multicharged ions scattered and recoiled from a silicon surface

The doubly charged and triply charged ion yields from keV ion-silicon surface scattering are found to have a strong dependence on the atomic number Z₁ of the incident ion. For Z₁ < Z₂ the yield of scattered multicharged ions increases with Z₁, so that these ions dominate the recoiling Si²⁺ and Si³⁺ ions by Z₁ = 9. In contrast, when Z₁ > Z₂, there are large yields of Si²⁺ and Si³⁺ ions, and the multicharged scattered ion yields are too small to detect. The interaction radius at which shell vacancies are produced is also found to change, suggesting that electron promotion occurs at a different level crossing on either side of Z₁ = Z₂.     

氢化钛镍合金阴极真空弧放电离子特性研究

本文将氢化钛镍合金材料应用于强流长脉冲（200 A/270 μs）真空弧放电实验中,该材料能在强流长脉冲真空弧放电产生的高温条件下保持较好的稳定性。使用飞行时间谱仪获得了氢化钛镍合金阴极真空弧放电产生的离子电荷态分布和离子成分。结果表明：Tiⁿ⁺和Niⁿ⁺电荷态为1+、2+和3+,在放电过程的早期（0~30 μs）,H⁺成分随时间逐渐增加,在30 μs时达到最大比例57%,而Tiⁿ⁺和Niⁿ⁺（n=1,2,3）离子成分随时间逐渐减少,在30 μs时达到最小比例43%;在放电过程的后期（30~270 μs）,H⁺成分迅速下降且在75 μs后保持在总离子流的12%左右直至放电结束,Tiⁿ⁺和Niⁿ⁺（n=1,2,3）含量随时间逐步增加,且在75 μs后保持在总离子流的88%左右直至放电结束。     

核电厂离子交换树脂净化能力模拟实验研究

实验选取核电厂废液中典型裂变产物和腐蚀产物离子(Cs+、Sr2+、Co2+)配制水样,针对不同类型树脂、不同树脂层高以及不同床体积流速进行动态交换吸附实验,重点比较了不同条件下核级树脂净化能力(去污因子)的变化。结果表明:树脂层高的增加对去污效果的影响显著,特别是高交联度的树脂,对Cs+、Sr2+、Co2+的去污因子可增加约200%以上;在一定范围内提高床体积流速对树脂的去污效果存在影响,高交联度的树脂流速提高后去污因子有明显上升趋势;在10BV/h(BV=进水流量/树脂装填量)流速下树脂交联度的高低对水样的去污效果影响不明显;在1mg/L水样浓度下,大孔型阳树脂的去污效果较凝胶型阳树脂好;同等条件下,氢/氢氧型混合树脂处理离子态杂质的去污效果较单独的氢型阳树脂好。     

Investigation of the radiation hardness on semiconductor devices using the ion micro-beam

Variation of the ion beam induced charge (IBIC) pulse heights due to ion irradiation was investigated on a Si pn diode and a 6H-SiC Schottky diode using a 2 Mev He⁺ micro-beam. Each diode was irradiated with a focused 2 MeV He⁺ micro-beam to a fluence in the range of 1×10⁹–1×10¹³ ions/cm². Charge pulse heights were analyzed as a function of the irradiation fluence. After a 2 MeV ion irradiation to the Si pn junction diode, the IBIC pulse height decreased by 15% at 9.2×10¹² ions/cm². For the SiC Schottky diode, with a fluence of 6.5×10¹² ions/cm², the IBIC pulse height decreased by 49%. Our results show that the IBIC method is applicable to evaluate irradiation damage of Si and SiC devices and has revealed differences in the radiation hardness of devices dependent on both structural and material.     

类锂离子与He原子碰撞中的单电子丢失

本文基于Bohr-Lindhard(B-L)模型,考虑了碰撞双方的电子密度分布,计算了能量为20~900keV/u的B2+、C3+、N4+及O5+等类锂离子与He原子碰撞中的单电子丢失(SEL)、伴随单电离的单电子丢失(SELSI)、伴随双电离的单电子丢失(SELDI)等截面对能量的依赖曲线,计算结果与已有的实验数据符合较好。分析发现,对于一给定的过程,较重的离子有较小的有效碰撞参数范围;对于同一种入射离子,SEL、SELSI和SELDI等过程对应的有效碰撞参数范围依次减小。