用扫描俄歇微探针研究Au-Ag/Si体系异质界面电迁移

应用自建的超高真空原位装置及扫描俄歇微探针（SAM）技术，研究了AU－Ag／Si体系的表面电迁移现象。观测到清洁St表面上的Au／Ag／Si和Ag／Au／Si复层薄膜在直流电场作用下呈现明显的两相分离，Au，Ag分别向着外加电场的正极和负极方向快速迁移扩展，总的迁移速率对Au／Ag／Si约为0．63μm／s而对Ag／An／Si为0．37μm／s。实验结果表明，复合膜的结构，即其形成次序虽不影响An，Ag各自原有的电迁移方向，但影响其迁移扩散机制。并对上述现象及其相应的微观机制进行了初步分析。     

用离子团束沉积技术制备有机功能薄膜

用离子团束－飞行时间质谱计（IC－TOFMS）沉积系统制备了有机功能薄膜，它们具有完善的晶体结构，其中C60－TCNQ和Ag－NM具有电学双稳态特性。     

利用快速热退火在n-GaAs上形成浅欧姆接触

采用超高真空电子束蒸发设备和快速热退火工艺制备GaAs／Pd／AuGe／Ag／An多层结构和测量比接触电阻车所需的传输线模型。研究了比接触电阻率与退火温度和时间关系，400～500℃之间退火的欧姆接触的比接触电阻车约为10（－6）Ωem2。接触层表面光滑、界面平整。利用俄歇电子谱（AES）、二次离子质谱（SIMS）、X射线衍射（XRD）和扫描电镜（SEM）研究了欧姆接触的微观结构和形成机理。     

负载含银介孔分子筛活性碳纤维的制备与性能

将CAF加入由以十二胺，正硅酸乙酯，乙醇，水等组成的介孔分子筛（MS）合成反应液中制备负载MS的活性碳纤维（ACF－MS），MS含量由反应液中ACF的含量确定，通过真空浸渍和热分解使ACF－MS载银，载成新型净水材料－负载含银介孔分子筛的活性碳纤维（ACF－MS（Ag)），银含量由浸渍时间控制，在流动水的冲刷下ACF－MS（Ag)样品中的银含量缓慢下降，下降速率随着水流速和样品含银量的增加而增加，与ACF（Ag）相比，ACF－MS（Ag)的耐水冲刷性能显著提高。     

O2,金属电极/YSZ界面的电化学研究

本文利用交流阻抗和直流极化的电化学方法，比较了200～500℃氧在Pt、Ag、Au、Ag－Pd四种化学镀电极上的扩散，350～600℃氧在金属电极／YSZ界面的电化学反应速度以及阴阳电荷传递系数；计算了350～600℃四种电极的界面阻抗；研究了400℃时O2在Ag－Pd电极界面的交换电流密度Io与氧分压Po2的定量关系．     

电场对Au/SiO_2及Au-Ag/SiO_2表面结构与原子迁移特性的影响

利用扫描俄歇微探针（SAM）和原子力显微镜（AFM）研究了SiO2衬底上在外加直流电场作用下沉积的Au薄膜及Au－Ag复层薄膜的表面形貌、结构变化及电迁移扩散行为。结果表明：①在衬底表面施加水平方向电场辅助沉积制备的Au薄膜其表面显示出平整的椭球形晶粒，并沿外电场方向呈织构取向。与未加电场的热蒸发沉积膜相比，具有较为均匀、有序的表面微观结构。②SiO2表面Au-Ag复层薄膜在直流电场作用下，Au，Ag物种同时向负极方向作走向迁移扩散，这与Au－Ag复层薄膜在Si（111）表面电迁移时Au，Ag分别向两极扩散的特点不同，反映了衬底性质对表面原子电迁移的影响。③Au－Ag复膜在电迁移过程中还发生了表面原子聚集状态的变化，原来沉积排布的细小晶粒在电迁移扩散过程中出现不均匀长大，导致薄膜表面粗糙度显著增加。     

电子轰击下Ag_(1-β)(TCNQ)薄膜的相变

在类似于光导摄像管的真空器件中，用Ag1－β（TCNQ）薄膜置换光敏靶，原则上可以做成用电子束写入和读出的高密度存贮器，它的寻址可以用磁偏转或静电偏转系统。本文用实验方法确定了电子束的写入条件，进一步证明这种设想的合理性和可行性。     

用于超短激光脉冲检测的新型光电薄膜的量子产额

超短激光脉冲的研究已经成为基础科学与应用科学研究的重要内容，对用于检测这种信号的光电发射功能薄膜材料的研究也受到人们极大重视。Ag－Ba－O薄膜是一种可以经历暴露大气，用于超短激光脉冲检测的新型光电发射材料。光电薄膜在超短激光脉冲作用下的量子产额测量与普通可见光作用下量子产额的测量有很大不同。当激光波长为1．06μm，激光的功率密度为107～108W／cm2，选单光脉冲宽度为40Ps时，经历暴露大气的Ag－Ba－O薄膜光电量子产额为10-6数量级。这种薄膜经历暴露大气后，可见光的积分灵敏度全部损失，但在1．06μm激光作用下恢复，光电量子产额不比未暴露大气的样品低。这为Ag－Ba－O薄膜应甲于红外超短激光脉冲的检测奠定了基础。     

基于“人-机”系统的功能与模式研究

文章通过对人机特征机能的比较，阐述了“人－机”系统的功能，在此基础上，建立了“人－机”系统模型。     

一次枝晶间距模型及在单晶高温合金中的验证

本文评述了二元系统一次枝晶间距模型的发展及特点，并验证了在多元合金系统中的适用性，结果表明，在ＤＤ８单晶高温合金中，λ１－Ｇ关系符合二元系统模型，但λ１－Ｖ关系和二元系统模型有较大的偏离，λ１为一次枝晶间距，Ｇ为温度梯度，Ｖ为凝固速率，在本文凝固条件下，ＤＤ８合金的λ１－Ｇ，Ｖ关系式为：λ１＝１１４１．５Ｇ＾－０．５２Ｖ＾－０．１２，其中λ１单位为μｍ，Ｇ为Ｋ／ｍｍ，Ｖ为μｍ／ｓ。     

Design of diffusion barriers

An exact analytical solution to metal diffusion in a triplet stack consisting of a barrier material layer, an interlayer dielectric, and a semiconductor substrate has been developed. The solution shows how the diffusive behavior of the metal depends on the material properties of the entire system. The resistance of the interconnect system to contamination is not linearly dependent on the material and geometrical properties and some properties, such as the barrier diffusivity and solubility, are significantly more important than others. The model was able to match the copper diffusion data of Shacham-Diamand [J. Electrochem. Soc., 140(8), 2427 (1993)] very well using material properties consistent with the available experimental data.     

The effect of metallic barriers in inhibiting copper ion transport in low-k dielectrics: Implications for time-to-failure

In this article we study the effect of metallic barriers in inhibiting copper ion drift/diffusion into low-k dielectrics through a mathematical analysis. We extend our previous drift/diffusion model for copper ion drift without barriers to include the effect of metallic barriers. The addition of the barrier changes the boundary condition at the barrier/dielectric interface and results in a time dependent flux and concentration at the interface. The results show that for a given dielectric, a metallic barrier needs to have both a lower ionic solubility and lower ionic diffusivity for optimal effectiveness.     

Barrier capability of Zr–N films with titanium addition against copper diffusion

Zr–Ti–N film prepared by sputtering deposition has been employed as a potential diffusion barrier for Cu metallization. It is thought that the existing states of Ti and Zr in the films are Ti–N and Zr–N phase in Zr–Ti–N films. Material analysis by XRD, XPS and sheet resistance measurement reveal that the failure of Zr–N film is mainly due to the formation of Cu₃Si precipitates at the Zr–N/Si interface by Cu diffusion through the grain boundaries or local defects of the Zr–N barrier layer into Si substrate. In conjunction with sheet resistance measurement, XRD and XPS analyses, the Cu/Zr–Ti–N/Si contact system has high thermal stability at least up to 700 °C. The incorporation of Ti atoms into Zr–N barrier layer was shown to be beneficial in improving the thermal stability of the Cu/barrier/Si contact system.     

Diffusion barrier properties of AlMoNbSiTaTiVZr high-entropy alloy layer between copper and silicon

The application of an AlMoNbSiTaTiVZr high-entropy alloy film as diffusion barrier for copper metallization has been investigated. The AlMoNbSiTaTiVZr and copper layers are deposited sequentially, without breaking vacuum, onto silicon substrates by DC magnetron sputtering. The AlMoNbSiTaTiVZr films are found to possess a stable amorphous structure due to their high-entropy and limited diffusion kinetics. The AlMoNbSiTaTiVZr high entropy alloy film is determined to prevent copper-silicide formation up to 700 °C for 30 min. Thus, HEAs appear to have potential use as effective diffusion barriers for copper metallization.     

Diffusion barrier property of TiN and TiN/Al/TiN films deposited with FMCVD for Cu interconnection in ULSI

Flow modulation chemical vapor deposition (FMCVD) with titanium tetrachloride (TiCl₄) and ammonia (NH₃) is effective for depositing titanium nitride (TiN) films with conformal morphology, good step coverage, low electrical resistivity, and low chlorine residual contamination. It means that FMCVD TiN film is a good candidate of diffusion barriers for copper interconnection technology in ULSI. But the diffusion barrier property of FMCVD TiN film against Cu diffusion has not been confirmed. So, firstly, we deposited Cu (100 nm)/FMCVD TiN (25 nm)/Si multilayer films and investigated the thermal stability of Cu/TiN/Si structure. Vacuum annealing was done at 400, 500, 550 and 600 °C. For films annealed for 30 min at 400 °C, Cu diffused through the TiN layer and formed copper silicides on the surface of Si substrates. Therefore, FMCVD films formed under such conditions are unsatisfactory diffusion barriers. To enhance the diffusion barrier property of FMCVD TiN films, we used sequential deposition to introduce a monolayer of Al atoms between two TiN films. Etch-pit tests showed that for TiN films with Al interlayer, Cu diffusion through the barrier occurred at 500 °C and that is 100 °C higher than TiN film without Al interlayer. Al atoms formed AlO_x with oxygen atoms present in the TiN films as impurities, and fill up the grain boundaries of TiN film, thereby blocking the diffusion of Cu atoms.     

Formation of diffusion barrier on the Ni-based superalloy by low-pressure pre-oxidation

The formation of diffusion barrier on the Ni-based superalloy substrate by low-pressure pre-oxidation is studied in this paper. The pre-oxidation was carried out by heating the substrate under a low-oxygen partial pressure with electron beam of the electron beam physical vapor deposition (EB-PVD) facility. The effect of diffusion barrier was investigated by both isothermal and cyclic oxidations at 1373 K, and the oxidation-kinetic curves were then obtained. The diffusion barrier mainly contains NiO, α,θ-Al₂O₃ and Cr₂O₃, and has a thickness of 185-225 nm. The investigation indicates that the barrier could partially inhibit the interdiffusion of elements of the superalloy substrate and then improve the oxidation-resistance performance of thermal barrier coatings (TBCs) to some extent. However, the difference of thermal cycling lifetime between TBCs samples with and without diffusion barrier is not extremely visible.     

砷化镓扩散长度的变加速电压束感生电流法测量

计算了变加速电压的速感生电流法测定扩散长度理论公式，并用电子探针和扫描电镜测量了各种ＧａＡｓ材料的扩散长度。     

Thin tantalum-silicon-oxygen/tantalum-silicon-nitrogen films as high-efficiency humidity diffusion barriers for solar cell encapsulation

Flexible thin-film solar cells require flexible encapsulation to protect the copper-indium-2 selenide (CIS) absorber layer from humidity and aggressive environmental influences. Tantalum-silicon-based diffusion barriers are currently a favorite material to prevent future semiconductor devices from copper diffusion. In this work tantalum-silicon-nitrogen (Ta-Si-N) and tantalum-silicon-oxygen (Ta-Si-O) films were investigated and optimized for thin-film solar cell encapsulation of next-generation flexible solar modules.CIS solar modules were coated with tantalum-based barrier layers. The performance of the thin-film barrier encapsulation was determined by measuring the remaining module efficiency after a 1000 h accelerated aging test. A significantly enhanced stability against humidity diffusion in comparison to non-encapsulated modules was reached with a reactively sputtered thin-film system consisting of 250 nm Ta-Si-O and 15 nm Ta-Si-N.     

Three-dimensional Ehrlich-Schwoebel Barriers of W

Recent studies show that three-dimensional Ehrlich-Schwoebel (3D ES), or facet-facet, barriers of face-centered-cubic metals are substantially higher than other surface diffusion barriers. This paper presents the numerical results of 3D ES barriers for body-centered-cubic W, using classical molecular statics calculations and the nudged elastic band method. Results show that an adatom on W{110} has a diffusion barrier of 0.49 eV on the flat surface, 0.66 eV over a monolayer step, and 0.98 eV over a ridge to a neighboring {100} facet, which is one 3D ES barrier.     

Diffusion barrier performance of nano-structured and amorphous Ru-Ge diffusion barriers for copper metallization

In the experiment, nano-structured and amorphous ultrathin Ru-Ge interlayers (∼15 nm in thickness) were deposited between Cu(Ru) alloy film and Si substrate via co-sputtering functioning as preventive diffusion barrier layers. After annealing at different temperatures, X-ray diffraction and four-point probe method revealed that the amorphous Ru-Ge layer effectively suppressed the Cu diffusion into Si substrate up to a temperature of at least 873 K; however, it is less than 773 K for the nano-structured Ru-Ge layer. A self-formed amorphous multilayer of Ru(RuO_x)/RuGe_xCu_y could be attained by annealing Cu/Cu(Ru)/Ru-Ge(amorphous)/Si system at a very low temperature (even 473 K). The results proved that the amorphous Ru-Ge system could self-form the multilayer diffusion barrier before the diffusion reaction between Cu and Si and improved the thermal stability of the Cu interconnection significantly.