锌硼共掺对铌酸钾钠基压电陶瓷结构和性能影响的研究

采用传统固相制备工艺,在烧结温度960～980℃成功制备了致密度较高、综合电学性能优异的Li0.06(Na0.535K0.48)0.94Nb0.94Sb0.06O3+x%(质量分数)ZnO+B_2O_3(LNKNS-xZB2)无铅压电陶瓷。研究了ZnO+B_2O_3掺杂量对LNKNS-xZB2陶烧结性能、相结构、微观结构及电学性能的影响。结果发现,ZnO+B_2O_3的掺杂不仅改善了LNKNS-xZB2陶瓷的烧结性能,而且改变了陶瓷的相结构,在掺杂量x=1.2～1.6范围内形成四方-正交两相共存的多晶型相界(PPB)。在准同型相界处(x=1.6),陶瓷具有优异的电学性能:压电常数d33、机电耦合系数kp、介电常数εr、机械品质因数Qm、剩余极化强度Pr和相对密度ρr分别为285pC/N,35.4%,954,205,29.5μC/cm~2和96.3%。为铌酸钾钠基压电陶瓷的低温致密化烧结提供了新的思路。     

锂掺杂锆钛酸钡钙陶瓷的制备与表征

采用传统固相法制备了无铅压电陶瓷(Ba_(0.85)Ca_(0.15))(Ti_(0.9)Zr_(0.1))O_3+x%(质量分数)Li_2CO_3(x=0.1,0.3,0.5,0.7,1.0,简写BCTZL-x),通过X射线衍射(XRD),扫描电镜(SEM)等表征手段,研究锂对该陶瓷体系的微结构和电学性能的影响。X射线衍射分析表明,烧结于1 400℃/2 h下的BCTZL-x陶瓷具有典型ABO_3型钙钛矿结构。当增加Li的量,陶瓷经历从正交(O)向四方(T)晶相结构转变。当x≥0.3时,掺锂陶瓷结构变得更为致密。BCTZL-0.3体系陶瓷具有较好的电学性能,d_(33)=456 pC/N,k_p=0.49,ε_r=4 864,tanδ=0.018,Q_m=130。     

LiTaO3掺杂对K0.5Na0.5NbO3基无铅压电陶瓷性能的影响

采用传统陶瓷工艺制备了LiTaO3掺杂的K0.5Na0.5NbO3基无铅压电陶瓷(记为KNN xLT,x=0～8%(摩尔分数)),并研究了陶瓷的晶相、显微结构和压电、铁电等性能.研究结果表明,KNN xLT陶瓷的正交相-四方相准同型相界(MPB)位于4%＜x＜6%处.随着LiTaO3含量的增加,陶瓷的正交→四方结构相变温度(TO-T)向低温方向移动,而四方→立方结构相变温度(Tc)向高温方向移动.陶瓷的压电常数d33和机电耦合系数kp随LiTaO3含量的增加均先增大后减小,而剩余极化强度Pr则随之逐渐减小,矫顽场Ec逐渐增大.当x=6%时,陶瓷具有较好的压电和铁电性能:d33=190pC/N,kp=40.0%,Pr=22.0μC/cm2,Ec=1.78kV/mm,Tc=440℃.该体系陶瓷具有较高的压电常数和比较大的平面机电耦合系数,是一种应用前景良好的压电铁电材料.     

CeO_2掺杂对Pb_(0.92)Sr_(0.06)Ba_(0.02)(Sb_(2/3)Mn_(1/3))_(0.05)Zr_(0.48)Ti_(0.47)O_3基压电陶瓷相结构及性能的影响

采用传统固相烧结法制备Pb_(0.92)Sr_(0.06)Ba_(0.02)(Sb_(2/3)Mn_(1/3))_(0.05)Zr_(0.48)Ti_(0.47)O_3∶xCeO_2(简称PSBSM-PZT)压电陶瓷样品。研究不同CeO_2掺杂含量对PSBSM-PZT基陶瓷样品的物相结构、微观形貌、压电及介电性能的影响。结果表明:当CeO_2掺杂量x≤0.5%(质量分数,下同)时,陶瓷样品均为纯的钙钛矿结构。随着CeO_2掺杂含量的增加,陶瓷样品中四方相结构逐渐向三方相结构转变。随着CeO_2掺杂含量的进一步增加,陶瓷中出现焦绿石相,虽然陶瓷中已经出现焦绿石相,但是样品仍没有完全转变为三方相陶瓷;CeO_2掺杂具有细化晶粒的作用,当x=0.25%时样品晶粒晶界清晰,晶粒之间的结合相对致密,晶界处气孔率低,陶瓷断裂方式以沿晶断裂为主;当x=0.25%时,陶瓷样品获得最佳的压电与介电性能:d_(33)=346pC/N,k_p=0.60,Q_m=1396,ε_r=1309,tanδ=0.474%。     

锰掺杂对(K_(0.5)Na_(0.5))NbO_3-LiNbO_3压电陶瓷结构和性能的影响

采用传统陶瓷制备工艺制备了(K_(0.5)Na_(0.5))NbO_3-LiNbO_3-xMnO_2压电陶瓷,分析了陶瓷样品的微观组织结构.实验结果表明,随MnO_2掺杂量的增多,陶瓷由四方相转变为正交相,晶粒的均匀性下降并生成K_3LiNb_6O_(17)相.研究了MnO_2不同掺杂量对陶瓷压电性能的影响.结果表明,随锰掺杂量的增加,材料逐渐变"硬",机电耦合系数k_p和压电常数d_(33)逐渐减小,同时Q_m逐渐增大;当MnO_2含量为0.8%(质量分数)时,陶瓷的机械品质因数达到最大,此时陶瓷的压电性能为:k_p=0.34,k_t=0.43,d_(33)=110pC/N,Q_m=401.3.     

Ta_2O_5掺杂对0.48BCT-0.52BZT陶瓷结构及压电性能的影响

采用固相烧结法制备锆钛酸钡钙(BCZT)无铅压电陶瓷,研究不同Ta_2O_5掺杂浓度对陶瓷结构和压电、铁电、介电性能的影响。实验结果表明,不同掺杂量的钽烧结的BCZT无铅压电陶瓷均为典型的钙钛矿结构,陶瓷晶粒生长均匀,钽的掺杂对晶粒的生长有较大的影响;0.48(Ba_(0.7)Ca_(0.3))TiO_3-0.52Ba(Zr_(0.2)Ti_(0.8))O_3的压电系数、逆压电系数、剩余极化强度都在掺杂量0.3%(摩尔分数)Ta_2O_5最优,综合性能为d_(33)为489 pC/N,2 kV/mm下逆压电系数高达657 pm/V,1 kV/mm下P_r为9.61μC/cm~2,E_c为0.237 kV/mm。     

铟掺杂PZT铁电陶瓷性能研究

采用传统固相烧结法制备In2O3掺杂的锆钛酸铅(PZT)铁电陶瓷,研究了In2O3掺杂量对PZT铁电陶瓷材料的相组成、微观结构、介电性能、压电性能及铁电性能的影响。研究结果表明,随着In2O3掺杂量的增加,PZT材料在准同型相界处三方相增加四方相减少,适量掺入In2O3有利于晶粒均匀生长。在不同的铟掺杂剂量下,PZT陶瓷材料分别具有最佳的铁电及压电性能。当铟掺杂量为0.1%(质量分数)时,PZT材料具有最佳的铁电性能,其剩余极化强度为23.43μC/cm2,矫顽场为9.783kV/cm。当铟掺杂量为0.3%(质量分数)时,PZT材料具有最好的压电性能,其tanδ=0.023,d33=540pC/N,εr=1513,Kp=0.764,Qm=1819。     

CuO掺杂的(Na_(0.66)K_(0.34))NbO_3无铅压电陶瓷性能研究

采用传统工艺制备了CuO掺杂的无铅压电陶瓷(Na0.66K0.34)NbO3,研究了CuO掺杂对其压电、介电、铁电等性质的影响。实验结果显示,CuO掺杂促进了晶粒生长,降低了样品的烧结温度,适量掺杂能够显著提高陶瓷样品的密度。当掺杂量为0.5%(摩尔分数)时,样品的密度为4.26g/cm3,品质因子Qm提高到400,介电损耗tanδ降低至0.8%。实验结果还显示,CuO掺杂使得陶瓷变硬,起到硬性添加剂的作用。随着CuO掺杂量的增加,样品的居里点(TC)、正交-四方相变温度(TT-O)、压电常数d33以及机电耦合系数kp均明显降低,而矫顽场显著增加。对于不掺杂的(Na0.66K0.34)NbO3陶瓷,其d33高达107pC/N,该陶瓷优异的压电性能表明,除了具有准同型相界结构的(Na0.5K0.5)NbO3外,(Na0.66K0.34)NbO3也是一种具有研究潜力的无铅压电陶瓷组分。     

BiScO_3-Bi(Zn_(1/2)Ti_(1/2))O_3-PbTiO_3高居里温度压电陶瓷介电压电性能研究

采用传统陶瓷工艺制备(1-x)Bi(Sc_(0.9)(Zn_(1/2)Ti_(1/2))_(0.1))O_3-xPbTiO_3(BS-0.1BZT-xPT)陶瓷试样。研究了BZT含量为0.1%(摩尔分数)时,不同PT含量BS-0.1BZT-xPT压电陶瓷结构、介电和压电性能的变化规律。研究表明,随着PT含量增加,试样从三方相向四方相转变;当PT含量为0.60~0.62之间时,试样处在三方到四方的过渡区。当PT量为0.6时,试样压电性能达到最大值(d33=250pC/N,kp=43%)。当PT量增加,试样居里温度呈上升趋势,εr max值先增加后减小。当PT含量为0.60时,试样铁电性能达到最大值,Pr=34.4μC/cm~2,Ec=19.2kV/cm。     

铈掺杂对PZT压电陶瓷性能的影响

研究了铈掺杂对PZT(锆钛酸铅)压电陶瓷材料的相组成、微观结构、介电性能、压电性能及铁电性能的影响,并对实验结果做出物理机理的解释.实验结果表明,适量的铈掺杂有利于材料结构的致密,提高了体电阻率,解决了材料在高温高场下极化困难的问题,在铈掺杂量为0.4%(摩尔分数)时,制备出综合性能良好的PZT压电陶瓷:室温时εr=958,tgδ=0.24%,d33=239pC/N,Kp=0.45,Qm=886,适合制备大功率压电陶瓷.     

Electrical properties of manganese modified sodium potassium lithium niobate lead-free piezoelectric ceramics

Effects of MnO₂ doping on the microstructure, densification, dielectric, ferroelectric and piezoelectric properties of (Na_0.5K_0.5)_0.935Li_0.065NbO₃ (NKLN) lead-free piezoelectric ceramics were investigated. On the one hand, the addition of a small amount of MnO₂ has little effect on the crystalline structure, however, slightly promotes sintering and grain growth, and improves the uniformity of microstructure to a certain degree. On the other hand, MnO₂ doped NKLN ceramics show hard properties in piezoelectric activities, possessing decreased room-temperature dielectric constant, loss tangent and piezoelectric constants d ₃₃, and increased mechanical quality factors Q _m. The 1.2 mol% MnO₂ doped NKLN ceramics have a loss tangent of approximately 1%, a Q _m of ∼170 and a d ₃₃ of 150 pC/N. These effects were considered to come from the formation of oxygen vacancies and the multi-valence states of Mn ions.     

Li补偿量对铌酸盐基无铅压电陶瓷结构和性能的影响

采用传统固相烧结工艺, 在1000℃成功制备了致密度较高、微观形貌较好的Li_0.05+x(Na_0.535K_0.48)_0.95NbO₃ (L_xNKN)压电陶瓷. 考察了Li补偿量对L_xNKN陶瓷致密度、微观结构、相结构、居里温度及电学性能的影响. 结果发现: 添加过量Li不仅促进陶瓷的烧结, 而且降低陶瓷的烧结温度. XRD图谱分析和相应的晶格常数计算表明, 在x=0.010~0.015范围内出现了四方-正交两相共存的多形态相界(PPT). 由于PPT的出现, 在最佳补偿量x=0.015处, 陶瓷的压电常数d₃₃、机电耦合系数k_p、介电常数ε_r和剩余极化强度P_r分别达到各自的最大值282 pC/N、44%、942和27 μC/cm². 与化学计量比的LNKN陶瓷相比, L_xNKN陶瓷的居里温度随Li补偿量的增加变化很小, 这可能是由于Li主要是起助烧作用而进入主相晶格很少的缘故. 研究工作为低温制备高性能铌酸盐系压电陶瓷提供了一种新的思路.     

BiCoO3-doped (K0.475Na0.475Li0.05)(Nb0.8Ta0.2)O3 lead-free piezoelectric ceramics

(1--x)(K_0.475Na_0.475Li_0.05)(Nb_0.8Ta_0.2)O₃--xBiCoO₃ (KNLNT--BC) lead-free piezoelectric ceramics were prepared by the conventional solid-state sintering method. Effects of the BC content on the phase structure, microstructure and electrical properties of KNLNT--BC ceramics were investigated. XRD patterns reveal that all the ceramic samples are in the pure perovskite-type structure, and the phase structure changes from the tetragonal to pseudo-cubic phase with the increase of the BC content. After the substitution of BC, the grain size is significantly reduced and relaxer behaviors are induced. By adding a small amount of BC to KNLNT ceramics, piezoelectric properties are improved, while further addition of BC makes the piezoelectric properties deteriorate markedly. The optimized electrical properties at x = 0.005 are as follows: d₃₃ = 194 pC/N, k_p = 0.44.     

热压法制备0.3PZN-0.7PZT压电陶瓷研究

研究了热压法制备０．３ＰＺＮ－０．７ＰＺＴ系压电陶瓷过程中,铅含量以及热压和退火工艺对材料性能的影响．实验结果表明,适当降低铅含量、提高退火温度和退火时间可得到性能优良的压电陶瓷．制得的压电陶瓷密度接近理论密度,电性能指标为： ｄ_３３＝７１５ ｐＣ／Ｎ, Ｋ_ｐ＝０．６５, ｔｇδ＝２．９％, ε_ｒ＝３４５７, Ｑ_ｍ＝５０．１．     

Synthesis and Electrical Properties of Li-modified Bi_(0.5)Na_(0.5)TiO_3-BaTiO_3 Lead-free Piezoelectric Ceramics

Lead-free piezoelectric ceramics (1-y)Bi0.5(Na1-xLix)0.5TiO3-yBaTiO3 with x=0-0.125 and y=0.02-0.12 were fabricated by a solid-state reaction process, and their dielectric, piezoelectric and ferroelectric properties were investigated. The results show that the addition of Li+ significantly improves the sintering performance and piezoelectric properties of the ceramics. X-ray diffraction (XRD) patterns indicate that the ceramics possess pure perovskite structure. At room temperature, the ceramics provide hig...     

BiYbO3固溶极限对BSPT压电陶瓷结构和电学性能的影响

采用传统固相反应法制备了yBiYbO₃-(0.36–y)BiScO₃-0.64PbTiO₃(BSYPT-0.64/y)体系压电陶瓷。X射线衍射显示BSYPT-0.64/y陶瓷体系为单一的钙钛矿结构; SEM测试结果显示当y=0.1时陶瓷表面形貌出现异常, 当y=0.14时有大量粒径为0.3~0.5 μm的细小晶粒析出在陶瓷的表面; EDS能谱分析发现细小晶粒主要成分为Bi、Yb、Ti、Sc和O, 表明BiYbO₃的含量超过10%时为BSYPT-0.64/y陶瓷体系的固溶极限区域; 通过BSYPT-0.64/y陶瓷的压电性能、铁电性能测试, 介温特性(T_c~450℃)结果分析发现当y>0.1时, BiYbO₃固溶极限析出是相对孤立的行为, 不是影响BSYPT-0.64/y的结构和电学性能的主要因素, 而其结构和电学性能的降低依赖于Sc/Pb相对含量比的降低导致组分对准同型相界的偏离。     

Li改性铌钽酸钾钠无铅压电陶瓷的研究

利用固相反应法制备了(Na _0.52 K _0.48-x Li _x)(Nb _0.86 Ta _0.10 Sb _0.04)O ₃系无铅压电陶瓷, 研究了不同Li含量(x分别为0、0.02、0.04、0.06、0.08)样品的显微结构、物相组成及电性能. 结果表明, Li含量的改变对其物相组成、压电性能、铁电性能、介电性能都有显著影响. 当Li含量x从0增大到0.04时, 其压电性能相应提高, 当Li含量x超过0.04时, 压电性能明显下降; 在x=0.04时综合性能最好, 其压电常数d₃₃高达260pC/N, 介电损耗tanδ为0.027, 平面机电耦合系数k_p值达到50%, 剩余极化强度P_r为22μC·cm^-2, 矫顽电场E_c为0.95kV·mm^-1, 居里温度为316℃. 另外, 随着Li含量增加, 该系统的矫顽电场明显增强, 居里温度有所提高.     

制备工艺对(Ba0.85Ca0.15)(Ti0.9Zr0.1)O3无铅压电陶瓷结构与性能的影响

采用液相混合与固相烧结相结合的方法制备了(Ba_0.85Ca_0.15)(Ti_0.9Zr_0.1)O₃ (BCTZ) 无铅压电陶瓷, 系统研究了烧结保温时间对其相结构、介电、压电和铁电性能的影响以及电学性能随温度的变化。研究结果表明: 制备的陶瓷样品具有单一的四方钙钛矿结构。当烧结温度为1540℃时, 随着保温时间的延长, 样品晶粒尺寸变大, 居里温度(T_c)升高, 压电性能提高, 电致伸缩性能下降。当保温时间为24 h时, BCTZ陶瓷综合性能最为优异: T_c ~90℃, tanδ < 0.05, k_p ~ 0.46, d₃₃ ~ 540 pC/N, P_s ~17 μC/cm²。陶瓷电学性能随温度变化测试结果又表明, BCTZ陶瓷的电学性能具有很强的温度依赖性, 随着温度的升高其电学性能逐渐下降。     

Improved electrical properties of Co-doped 0.92NBT–0.04KBT–0.04BT lead-free ceramics

The (1???2x)NBT–xKBT–xBT ternary piezoelectric system has been extensively studied in recent years. However, its electrical performance is far inferior to lead-based counterparts, and could not meet the requirements for practical applications. In this contribution, the 0.92NBT–0.04KBT–0.04BT (abbreviated as NKBT4) ceramics were prepared by traditional solid-state method. The effects of doped cobalt content on the structure and electrical performance of NKBT4 ceramics were studied systematically. The content of Co₂O₃ affects the average grain size, maximum dielectric constant, piezoelectric properties and the ferroelectric responses of the ceramics. It was found that the introduction of cobalt did not affect the phase structure of the ceramics, but is beneficial for the improvement of the dielectric and piezoelectric properties. When x?=?0.2, the piezoelectric coefficient (d₃₃) is around 130 pC/N, which is greatly improved compared to pure NKBT4 ceramics. Besides, a relatively high dielectric constant (ε_r?=?1150) was obtained at the same composition. This work paves a new way for the further development of high performance lead-free piezoelectric ceramics.     

微波烧结对PLZT陶瓷电学性能的影响

采用部分共沉淀法制备锆钛酸铅镧(PLZT)粉体, 分别用普通马弗炉和微波马弗炉进行烧结成瓷, 对比分析不同烧结方法对PLZT陶瓷的晶体结构、微观形貌和电学性能的影响。结果表明: 微波烧结和常规烧结均成功制备出钙钛矿相PLZT陶瓷。采用微波烧结得到的PLZT陶瓷样品比常规烧结的晶粒细小, 尺寸更均匀, 孔洞较少; 在电学性能相近时, 微波烧结温度远低于常规烧结, 且保温时间远小于常规烧结。在1000℃进行微波烧结, 陶瓷的介电常数ε_r和压电常数d₃₃最大, ε_r为2512, d33为405 pC/N, 此时, 剩余极化强度为16.5 kV/cm, 矫顽场为8.2μC/cm²; 在1250℃常规烧结, 陶瓷的介电常数最大, 为2822, 压电常数最大, 为508 pC/N, 剩余极化强度为21.6 kV/cm, 矫顽场为9.6μC/cm²。