Thickness dependent reactivity and coercivity for ultrathin Co/Si(111) films

For Co/Si(111) films thinner than 15 ML, the thickness dependent reactivity and magnetic properties have been systematically studied. As the Co coverage increases, Co adatoms on the Si(111) surface show enhanced chemical reactivity for oxidation due to the change of the chemical state. After the saturation oxygen exposure, oxygen atoms interact with a thick Co layer to form a rougher interface. Complex adsorption kinetics of oxygen in the Co layer is observed. From the depth-profiling measurements for Co layers close to the Co-Si interface, the sputtering rate is enhanced due to that the solid surfaces of Si and Co-Si compounds are resistive against oxidation. The descending of the Kerr intensity by saturation oxygen exposure shows the limited diffusion length of oxygen atoms into the films. The inertness of the Co-Si interface, the reduction of pure cobalt and imperfection introduced by oxygen influence the coercivity of O/Co/Si(111).     

Magnetic anisotropy of the ultrathin Fe layers in Fe/NiFe/Fe/Cu multilayers and their effect to the magnetoresistance

The effects of the deposition of ultrathin ⁵⁷Fe layers on both sides of the NiFe layers in NiFe/Cu multilayers were investigated by focusing on their structural, magnetic and magnetoresistance properties. Conversion electron Mössbauer spectroscopy measurements showed an out-of-plane magnetic anisotropy of the Fe layers. The magnetoresistance curves showed an unusual shape, where up to three peaks were observed. Eight variables computer simulations, based on a phenomenological model that considers bilinear and biquadratic couplings between layers with cubic and in-plane uniaxial anisotropies, were used in order to calculate the best-fitting magnetization curves for the NiFe/Cu and Fe/NiFe/Fe/Cu multilayers. Both model and Mössbauer spectroscopy results showed that it is the rotation of the Fe magnetic moment from out-of-plane to in-plane orientation that provokes the unusual magnetoresistance curve shape. The observed reduction of the magnetoresistance amplitude with the addition of one monolayer of Fe in the NiFe/Cu multilayer was attributed to a less-effective spin-dependent scattering that occurs at Fe/Cu and Fe/NiFe interfaces than at the NiFe/Cu interfaces.     

Transmission electron microscopy study of the initial growth stage of GaSb grown on Si (001) substrate by molecular beam epitaxy method

The microstructural properties at the initial growth stage of the GaSb heteroepitaxial growth on a silicon (Si) substrate were investigated using transmission electron microscopy. Well-separated and tall GaSb islands were observed when GaSb was directly grown on a Si substrate (sample A). On the other hand, GaSb was grown to the coalesced and flat islands when a low-temperature AlSb buffer (sample B) was introduced. The different morphologies of the GaSb islands were related to the microstructural properties of the interface between the GaSb and the Si substrate. The GaSb/Si interface was rough, and disordered atomic arrangements were observed at the interface in sample A. On the other hand, the GaSb/Si interface was flat, and well-ordered atomic arrangements appeared at the interface in sample B. Entirely different mechanisms for the relaxation of a misfit strain were demonstrated from a microstructural viewpoint.     

Electrical transport and magnetoresistance in La2/3Sr1/3MnO3 polycrystalline composite thin films

The manganite La_2/3Sr_1/3MnO₃ (LSMO)/CuO and LSMO/Al₂O₃ polycrystalline composite thin films are deposited on Si (111) substrates in a magnetron sputtering system, using the tandem deposition method. The electrical transport and magnetoresistance properties of the films have been systematically investigated. By considering two parallel conduction channels at the grain boundary, we obtain a general expression for the temperature dependency of the resistance that agrees with the experimental data measured in LSMO polycrystalline composite thin films at whole temperature region of 300 K-10 K under the condition of zero magnetic field. Also, the resistance vs. temperature curve under an external magnetic field can be obtained by only varying one parameter in the model. It provides an effective way to obtain the high-temperature grain boundary magnetoresistance in the polycrystalline manganite.     

Evolution of composition distribution of Si-capped Ge islands on Si(001)

The evolution of the composition distribution and microstructures of Ge islands on Si(001) during the Si overgrowth was investigated by atomic force microscopy combined with selective wet etching procedures. With increasing Si coverage to 5.4 nm, the uncapped Ge islands were found to change their shapes dramatically from domes to truncated pyramids, nanorings and eventually to the fully buried islands. Different atomic composition profiles in SiGe islands were observed at different Si coverages. Especially, the nanorings were found to have a Ge-rich core with a Si-rich periphery. Based on the experimental results, the Ge redistribution in islands during Si capping is not only correlated with the intermixing between Si capping layer and Ge islands, but also a strain-driven process.     

Growth, structure and epitaxy of ultrathin NiO films on Ag(001)

NiO ultrathin films have been grown on Ag(001) by Ni deposition in an O₂ atmosphere. The thickness range 5–50 ML has been investigated. X-ray photoelectron spectroscopy has been used to study the stoichiometric composition and chemical purity of the oxide films. We found completely oxidized stoichiometric NiO films. Their contamination has been found to be limited to the topmost layers. Photoelectron diffraction has given information concerning the local crystal structure of the films. The film atomic geometry has been found to be the same independent of thickness in the 0–50 ML range. The films have the expected (001) rock-salt structure with the same in plane orientation as the Ag(001) substrate. Specular X-ray reflectivity has allowed a very accurate thickness evaluation and has given information on the width of the density gradients at the film–substrate and vacuum–film interfaces, found to be of the order of a few atomic layers.     

Ion beam mixing of Co/Fe multilayers: Magnetic and structural properties

[Co(7 nm)/Fe(7 nm)]₆ multilayers were electron-beam evaporated onto Si(100) substrates in ultrahigh vacuum and irradiated at room temperature with 200-keV Xe ions, leading to ion beam mixing within the Co/Fe multilayer, but not with the Si substrate. Irradiation-induced changes in structural and magnetic properties were characterized by means of Rutherford backscattering spectroscopy, X-ray diffraction and in-plane magneto-optical Kerr effect. Irradiation with 1 × 10¹⁶ Xe ions/cm² induced Co/Fe intermixing to a 1 : 1 atomic concentration ratio (RBS) and the formation of the Fe₅₀Co₅₀ permendur phase in the intermixed zone (XRD). For lower ion fluences, the coercivity decreased strongly, but then increased slowly for higher fluences. The angular pattern of the relative remanence showed a perfect uniaxial anisotropy. The magnetic energy density was parametrized with the expression E_s / M_s ∝ (K_u1 / M_s) sin²(φ − φ₀) + (K_u2 / M_s) sin⁴(φ − φ₀), M_s being the saturation magnetization and φ₀ the symmetry angle. The second-order term K_u2 / M_s was found to decrease strongly with increasing Xe fluence.     

Effect of carbon additive on microstructure evolution and magnetic properties of epitaxial FePt (001) thin films

FePt:C thin films were deposited on CrRu underlayers by DC magnetron co-sputtering. The effects of C content, FePt:C film thickness and substrate temperature on the microstructural and magnetic properties of the epitaxial FePt (001) films were studied. Experimental results showed that even with 30 vol.% C doping, the FePt films could keep a (001) preferred orientation at 350 °C. When a FePt:C film was very thin (< 5 nm), the film had a continuous microstructure instead of a granual structure with C diffused onto the film surface. With further increased film thickness, the film started to nucleate and formed a column microstructure over continuous FePt films. A strong exchange coupling in the FePt:C films was believed to be due to the presence of a thin continuous FePt layer attributed to the carbon diffusion during the initial stage of the FePt:C film growth. Despite the presence of a strong exchange coupling in the FePt:C (20 vol.% C) film, the SNR ratio of the FePt:C media was about 10 dB better than that of the pure FePt media. The epitaxial growth of the FePt:C films on the Pt layers was observed from high resolution TEM cross sectional images even for the films grown at about 200 °C. The TEM images did not show an obvious change in the morphology of the FePt:C films deposited at different temperatures (from 200 °C to 350 °C), though the ordering degree and coercivity of the films increased with increased substrate temperature.     

Oxidation resistance of thin boron carbo-nitride films on Ge(100) and Ge nanowires

Chemical vapor deposition of thin (< 10 nm) films of amorphous boron carbo-nitride (BC_0.7N_0.08, or BCN) on Ge(100) and Ge nanowire (GeNW) surfaces was studied to determine the ability of BCN to prevent oxidation of Ge. X-ray photoelectron spectroscopy was used to track Ge oxidation of BCN-covered Ge(100) upon exposure to ambient, 50 °C deionized water, and a 250 °C atomic layer deposition HfO₂ process. BCN overlayers incorporate O immediately upon ambient or water exposure, but it is limited to 15% O uptake. If the BCN layer is continuous, the underlying Ge(100) surface is not oxidized despite the incorporation of O into BCN. The minimum continuous BCN film thickness that prevents Ge(100) oxidation is ~ 4 nm. Thinner films (≤ 3.2 nm) permitted Ge(100) oxidation in each of the oxidizing environments studied. GeNWs with a 5.7 nm BCN coating were resistant to oxidation for at least 5 months of ambient exposure. High resolution transmission electron microscopy images of HfO₂/BCN/Ge(100) cross-sections and BCN-coated GeNWs reveal clean, abrupt BCN-Ge(100) interfaces.     

Electron energy-loss spectroscopy investigation of Y2O3 films on Si (001) substrate

Electron energy -loss spectroscopy has been used to investigate the interface between a Y₂O₃ film and the silicon substrate. The chemical composition of the interface layer is revealed to be nearly pure amorphous SiO₂. Yttrium silicates are found at the Y₂O₃/SiO₂ interface region. The formation of the interfacial yttrium silicates has been interpreted by the direct chemical reaction between the deposited Y₂O₃ film and the SiO₂ interface layer. The Si L₂₃ and O K edges of yttrium silicates (Y₂SiO₅ and Y₂Si₂O₇) have been calculated by the first-principle full multiple - scattering method. The theoretical results are consistent with the experimental spectra, which confirms the formation of yttrium silicates.     

Magnetization behaviour in ultrathin Co/Cu/Ni/Cu(001) trilayers

The magnetization of ultrathin multilayer systems depends in a very sensitive way on their composition. We consider the temperature dependence of magnetization and its orientation in three types of trilayers: 2ML Co/2ML Cu/4ML Ni/Cu(001), 1ML Co/2ML Cu/4ML Ni/Cu(001) and 1ML Co/2ML Cu/3ML Ni/Cu(001). The composition of each system leads to different interdependence of ordering temperatures characterizing the ferromagnetic films. It is shown that in all cases the sublayer magnetizations change gradually their directions as a function of temperature. The use of Néel sublattices concept in Valenta approach allows us to present all dependences in a layer resolved mode which leads to the conclusion that the spin reorientation process runs through non collinear magnetic superstructures.     

Evolution of structure and magnetic properties from ferromagnetism to superparamagnetism in Co/Mo multilayers

Co/Mo multilayers with various low Co layer thickness and fixed Mo layer thickness were prepared by alternate evaporation. Transmission electron microscopy, X-ray diffraction and vibrating sample magnetometry were used to study the magnetic properties and microstructures of the films. The magnetic transition from ferromagnetic to superparamagnetic was observed at a critical thickness, accompanied with the structural evolution of the films from crystalline to amorphous. The contribution of the amorphous microstructure to the magnetic properties is discussed.     

Changes in Gd2O3 films grown on Si(100) as a function of nitridation temperature and Zr incorporation

We investigated Gd₂O₃ and Zr-incorporated Gd₂O₃ films grown on Si (100) as a function of nitridation temperature under an NH₃ ambient and the incorporation of Zr into the film. The formation of a silicide layer at the interfacial region was suppressed in cases of Zr-incorporated or NH₃-nitried Gd₂O₃ films. The crystalline structure was affected when zirconium, with a relatively small ionic radius, was substituted with gadolinium. When the concentration of Zr atoms in a Gd₂O₃ film reaches a specific level (Gd_0.6Zr_1.9O_4.3), phase transition occurred from cubic Gd₂O₃ to monoclinic ZrO₂. However, the monoclinic phase disappeared after nitridation at 900 °C in an NH₃ ambient. The majority of the nitrogen atoms accumulated near the interface in the films and the concentration of incorporated N increased with increasing Zr content and NH₃ annealing temperature. Moreover, nitrogen atoms bonded to Zr-silicate at the interface, in preference to ZrO₂ in the film. These incorporation characteristics of nitrogen into Zr-incorporated Gd₂O₃ film have an effect on the thermal stability and crystalline structure of a film.     

Structure of ultrathin MgO films on Mo(001)

We have studied the structure of ultrathin MgO films grown on a single crystal Mo(001) surface. Scanning tunneling microscopy (STM) and low energy electron diffraction (LEED) were used to investigate the effect of substrate temperature and oxygen partial pressure on the growth and morphology of these films. LEED indicates the growth of (100) films with MgO 〈110〉 directions oriented along 〈100〉 directions of the substrate. Despite the insulating nature of bulk MgO, films up to 25-Å thick are sufficiently conducting to perform STM measurements. STM reveals Mg deposition in an oxygen ambient at substrate temperatures from 300 to 900 K produces uniform films. Films as thick as eight atomic layers typically have only three layers exposed. These films consist of small domains between 20 and 60 Å in diameter. The domain shapes are random and the perimeters show no preferred orientation. In contrast, films grown at temperatures in excess of 1000 K exhibit larger three-dimensional MgO islands (Volmer-Weber growth). Steps on these high temperature films orient preferentially along thermodynamically favored MgO 〈100〉 directions. STM images of films deposited at high temperature exhibit a checkerboard pattern. The dimensions and symmetry of this pattern are consistent with the coincidence arising from the mismatch of the MgO(100) and Mo(001) lattice. Annealing room temperature deposited films results in island coalescence and produces uniform films with domains in excess of 100 Å. The perimeters of these domains are oriented along MgO 〈100〉 directions.     

Electrical transport and magnetoresistance in La0.67Ca0.33MnO3/BaTiO3 composites

The results of the structure, electrical transport and magnetoresistance of a ferromagnet-ferroelectric-type La_0.67Ca_0.33MnO₃ (LCMO)/BaTiO₃ composites fabricated by the sol-gel method are presented. The structure and morphology characterization indicates no apparent variations in morphology and particle size in spite of the existence of BaTiO₃. The insulator-metal transition temperature (T_IM) is shifted to a higher temperature and resistivity decreases with the increase of low content BaTiO₃. Magnetoresistance (MR) of the composites is enhanced over the whole temperature range as a result of the introduction of BaTiO₃. By calculating in terms of a ferromagnetic grain coupling model, we attribute these transport properties to the enhancement of the ferromagnetic coupling between the neighboring grains, which could be explained by the increase of the carrier concentration at the grain boundary due to the introduction of BaTiO₃ and the associated magnetoelectric coupling effect.     

Capping effects of Au on Fe/GaAs(001) studied by magneto-optical Kerr effect

Molecular beam epitaxially grown Fe on GaAs(001) capped by Au overlayer with variable thickness had been investigated in situ by magneto-optical Kerr effect (MOKE). It is observed that the MOKE intensity as a function of Au film thickness decays much faster than that derived from the well-known Zak's theory. This can be explained by different optical parameters of ultrathin films from bulk values. It is also found that a minimum thickness of 1.4 nm Au is needed to effectively prevent the oxidation of Fe film at 300 K in atmosphere.     

Nearly perfect (001)-oriented Ag/[CoPt/C]5/Ag composite films deposited on glass substrates

Sandwich Ag/[CoPt(3 nm)/C(3 nm)]₅/Ag films were deposited on glass substrates by magnetron sputtering. After annealing at 600 °C for 30 min, a nearly-perfect (001)-oriented L1₀ CoPt film with extremely high perpendicular anisotropy was obtained when the thickness of Ag top- and underlayer were both equal to 5 nm. The strain energy caused by the Ag layer together with the diffusion of Ag and C atoms, resulted in the enhancement of the ordering degree of the L1₀ CoPt phase and the development of the (001) texture of the films.     

Diffusion-induced step decoration of Co on Ag(001)

We have investigated submonolayers of Co deposited on a Ag(001) surface with ultra low energy ion deposition and a deposition energy ranging from 5 to 30 eV. The sites of nucleation, the island densities and heights were determined with scanning tunneling microscopy. Next to randomly distributed islands on the terraces observed for every deposition energy, preferential nucleation on the upper side of the Ag steps was observed only for 5 and 15 eV. We found that for increasing characteristic length between the islands on a terrace, the number of islands per unit step length increases. This implies that step decoration is related to enhanced diffusion of Co atoms on the Ag surface during nucleation.     

Substrate temperature dependent morphology and resistivity of pulsed laser deposited iridium oxide thin films

Iridium oxide (IrO₂) thin films were deposited on Si (100) substrates by means of pulsed laser deposition technique at various substrate (deposition) temperatures ranging from 250 to 500 °C. Effects of substrate temperature on the crystalline nature, morphology and electrical properties of the deposited films were analyzed by using X-ray diffraction, Raman spectroscopy, Scanning electron microscopy and four-point probe method. It was found that the above properties were strongly dependent on the substrate temperature. The as-deposited films at all substrate temperatures were polycrystalline tetragonal IrO₂ and the preferential growth orientation changed with the substrate temperature. IrO₂ films exhibited fairly homogeneous thickness and good adhesion with the substrate, the average feature size increases with the substrate temperature. The room-temperature resistivity of IrO₂ films decreased with the increase of substrate temperature and the minimum resistivity of (42 ± 6) μΩ cm was obtained at 500 °C. The resistivity of IrO₂ films correlated well with the corresponding film morphology changes.