X射线衍射法研究刚玉注入层的结构

用Ｘ射线衍射法和ＰＯＷＤ１２理论计算程序探讨了多晶刚玉Ｆｅ离子注入层的结构变化。     

In~+离子注入蓝宝石(α-A1_2O_3单晶)的表面改性研究

研究了＜０００１＜和＜１２１０＞晶向蓝宝石（α－Ａｌ２Ｏ３单晶）在注入３６０ｋｅＶ．１×１０￣１６ｃｍ￣－２或１００ｋｅＶ、６×１０￣１６ｃｍ￣－２的Ｉｎ￣＋后产生的损伤、注入层的性能变化和退火行为。实验结果表明，退火过程中损伤的恢复和Ｉｎ的分布与退火气氛有关：在１００ｋｅＶ、６×１０￣１６ｃｍ￣－２的Ｉｎ￣＋注入时，注入层电阻率降低了１０个量级，大小为６．８×１０￣３·ｃｍ，表面损伤层的显微硬度提高了９２％；在３６０ｋｅＶ，１×１０￣１６ｃｍ￣－２的Ｉｎ＋注入时，其表面损伤层的显微硬度提高了４５％，在空气中不同温度下退火后，其显微硬度的变化和损伤的变化具有相同的规律。     

高剂量铂和钇离子注入Al2O3单晶的表面改性

研究了〈０００１〉和〈１２↑－１０〉晶向α－Ａｌ２Ｏ３单晶在高剂量的Ｙ、Ｐｔ离子注入后产生的损伤,注入层的性能变化和退火行为。实验结果表明,在室温,１７１ｋｅＶ、１×１０＾１７／ｃｍ＾２Ｙ离子注入的〈１２↑－１０〉α－Ａｌ２Ｏ３单晶的表面层约有１３９ｎｍ厚被无定形化。而１５８ｋｅＶ、９×１０＾１７／ｃｍ＾２Ｐｔ离子注入的〈０００１〉α－Ａｌ２Ｏ３单晶的表面层不产生无定形,且实际离子注入进衬底的剂量     

Structure and optical properties of sapphire implanted with boron at room temperature and 1000 °C

Many previous studies of ion-implanted sapphire have used gas-forming light ions or heavier metallic cations. In this study, boron (10¹⁷ cm⁻², 150 keV) was implanted in c-axis crystals at room temperature, 500 and 1000 °C as part of a continuing study of cascade density and “chemical” effects on the structure of sapphire. Rutherford backscattering-ion channeling (RBS-C) of the RT samples indicated little residual disorder in the Al-sublattice to a depth of 50–75 nm but almost random scattering at the depth of peak damage energy deposition. The transmission electron micrographs contain “black-spot” damage features. The residual disorder is much less at all depths for samples implanted at 1000 °C. The TEM photographs show a coarse “black-spot damage” microstructure. The optical absorption at 205 nm is much greater than for samples implanted with C, N, or Fe under similar conditions.     

Analysis of sapphire implanted with different elements using artificial neural networks

Five elements (Ti, Fe, Co, Er and Au) were implanted in sapphire to fluences between 8×10¹³ and 5×10¹⁷ at/cm², and energies between 200 and 800 keV. We used Rutherford backscattering to determine the dose and depth of the implanted elements. The data analysis is performed using an artificial neural network (ANN). Here we report a generalisation of previous works where ANNs were successfully applied for specific implantations such as Er in sapphire and Ge in Si. We have now developed a code that it is able to analyse data from implantations of any element with Z between 18 and 83 into sapphire. Although this problem is considerably more complex than single-system ANNs, the ANN developed produced excellent results when applied to experimental data. We discuss the reliability of the ANN and its applicability to the analysis of large batches of implanted samples.     

Optical absorption of metallic Zn nanoparticles in Zn ion implanted sapphire

Zn⁺ ion implantation (48 keV) was performed at room temperature up to a fluence of 5 × 10¹⁷ cm⁻² in -Al₂O₃ single crystals. X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and optical absorption spectroscopy were utilized to characterize the optical properties, chemical charge states and the microstructure of embedded metallic Zn nanoparticles, respectively. XPS analysis indicated that implanted Zn ions are in the charge state of metallic Zn⁰. TEM analysis revealed the metallic Zn nanoparticles of 3–10 nm in the as-implanted sample at a fluence of 1 × 10¹⁷ cm⁻². A selected area electron diffraction (SAD) pattern indicates the random orientation of the Zn nanoparticles. A clear absorption peak appeared gradually in the optical absorption spectra of the as-implanted crystals, due to surface plasma resonance (SPR) of Zn nanoparticles. The wavelength of the absorption peak shifted from 260 nm to 285 nm with the increasing ion fluence, ascribed to the growth of Zn nanoparticles.     

Optical behaviour of Er doped rutile by ion implantation

Rutile single crystals were implanted at room temperature with fluences of 5 × 10¹⁵ Er⁺/cm² ions with 150 keV energy. Rutherford backscattering/channeling along the 0 0 1 axis reveals complete amorphization of the implanted region. Photoluminescence reveals the presence of an optical centre close to the intra-ionic emission of Er³⁺ in the as-implanted samples. After annealing at 800 °C in air no changes were observed in the aligned RBS spectrum. On the contrary, annealing in reducing atmosphere (vacuum) induces the epitaxy of the damage layer. These results are unexpected, since for implantations of other ions under the same conditions, epitaxial recrystallization of the damage region occurs at this temperature. On the other hand, photoluminescence studies show the presence of new Er-related optical centres with high thermal stability in the samples annealed under oxidizing conditions. Annealing at 1000 °C in vacuum leads to the complete recrystallization of the damaged region. At this temperature a large fraction of Er segregates to the surface.     

Pb离子辐照注碳a-SiO2薄膜的光致发光性能

用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,进行120 keV C离子注入和950 MeV Pb离子辐照,用荧光光谱分析样品发光特性的改变.结果发现,C离子注入和高能Pb离子辐照均能显著影响样品的发光特性,且荧光光谱的改变强烈依赖于注入和辐照剂量,预示不同注入和辐照剂量将导致不同的发光结构形成.对注入和辐照造成薄膜...     

Structural disorder in sapphire induced by 90.3 MeV xenon ions

In our previous work [15], we have evidenced, using RBS-C, two effects in the aluminium sublattice of sapphire irradiated with 90.3 MeV xenon ions: a partial disorder creation that saturates at ∼40% followed above a threshold fluence by a highly disordered layer appearing behind the surface. In this work, by RBS-C analysis of the oxygen sublattice, we have observed only one regime of partial disorder creation that saturates at ∼60% in tracks of cross-section double of that found for the aluminium sublattice. Complementary analysis by X-ray diffraction shows that the lattice strain increases with the fluence until a maximum is reached about 7.5 × 10¹² ions/cm². For higher fluences, strain decreases first indicating a little stress relaxation in the material and tends afterwards, to remain constant. This stress relaxation is found to be related to the aluminium sublattice high disorder.     

N、O、Ga、Mg和Si离子注入n型GaN样品的光致发光谱中蓝光发射带的研究

采用光致发光手段研究了几种不同注入离子N、O、Mg、Si和Ga对n型GaN蓝光发射带的影响.其中离子的注入剂量分别为1013、1014、1015和1016cm-2,注入温度为室温.注入后的样品在900℃流动氮气环境下进行10 min的热退火.通过对实验测得的光致发光谱的分析,给出了不同注入离子对n型GaN蓝光发射带的影响随注入剂量的变化关系以及该影响的相对强弱,进而确定蓝光发射起源于注入离子引入的间位缺陷.     

Behaviors of optical and chemical state of Nb+ implanted sapphire after annealing

The behavior of the radiation damage of sapphire crystal ,produced by implantation with 380 keV Nb^ ion followed by annealing in a series of steps from 500to 11000℃ at reducing atmosphere,was investigated in optical absorption and XPS measurements.It is found that the implanted niobium in sapphire is in different local environments with different chemical states after the annealing,The changes in optical denstiy (OD) from the bands,based on the well known E-type centers,show that the annealing behavior of the radiation damage may be divided into different stages due to different mechansisms.     

Influence of UV irradiation and RTA process on optical properties of Si implanted SiO2

Si ion implantation was widely used to synthesize specimens of SiO₂ containing supersaturated Si and subsequent high temperature annealing induces the formation of embedded luminescent Si nanocrystals. In this work, the potentialities of excimer UV-light (172 nm, 7.2 eV) irradiation and rapid thermal annealing (RTA) to enhance the photoluminescence and to achieve low temperature formation of Si nanocrystals have been investigated. The Si ions were introduced at acceleration energy of 180 keV to fluence of 7.5 × 10¹⁶ ions/cm². The implanted samples were subsequently irradiated with an excimer-UV lamp. After the process, the samples were rapidly thermal annealed before furnace annealing (FA). Photoluminescence spectra were measured at various stages at the process. We found that the luminescence intensity is strongly enhanced with excimer-UV irradiation and RTA. Moreover, effective visible photoluminescence which is not observed with a simple FA treatment, is found to be observed even after FA at 900 °C, only for specimens treated with excimer-UV lamp and RTA. Based on our experimental results, we discuss the effects of excimer-UV lamp irradiation and RTA process on Si nanocrystals related photoluminescence.     

The excitation power density effect on the Si nanocrystals photoluminescence

In the present work we have studied the photoluminescence (PL) behavior from Si nanocrystals (NCs) as a function of the excitation power density and annealing time. The NCs were produced in a SiO₂ matrix by Si implantations from room temperature (RT) up to 700 °C, followed by post-annealing in N₂ atmosphere at high temperature. With this aim we have changed the excitation power density (from 2 × 10⁻³ W/cm² up to 15 W/cm²) and the annealing time (from 10 min up to 15 h). The strong PL signal, which at 15 W/cm² is composed by a single-peak structure (650–1000 nm) centered at around 780 nm, expands up to 1200 nm showing a two-peak structure when measured at 20 × 10⁻³ W/cm². The peak structure located at the short wavelength side is kept at 780 nm, while the second peak, starting at around 900 nm, redshifts and increases its intensity with the implantation temperature and annealing time. The effect of the annealing time on the PL spectra behavior measured at low excitation power agrees by the first time with the Si NC growth according to quantum confinement effects.     

离子注入修饰电极的研制及其在分析化学中的应用

离子注入是一种成熟的材料表面改性技术.1995年李启隆研究组将其引入分析化学领域,研制了离子注入修饰电极.本文简述离子注入及其应用发展概况.并在此基础上简述离子注入修饰电极的研制、特点及其在分析化学中的应用.     

Lattice location and annealing behaviour of Pt and W implanted sapphire

Sapphire (α-Al₂O₃) single crystals were implanted with different doses of Pt and W ions in the range of 1 × 10¹⁴ at/cm² to 5 × 10¹⁶ at/cm² at room temperature. Detailed angular scans through the main axial directions show that up to 10¹⁵ at/cm² fluences about 80% of the W and Pt ions are incorporated into substitutional or near substitutional lattice sites. Below the amorphization threshold implantation damage show a double peak structure which anneals out partially at low temperature (800^oC). Amorphization of the implanted region starts for doses of the order of 1 × 10¹⁶ at/cm². The amorphous layer regrowths epitaxially in vacuum at 1100^oC, with a velocity of 3 Å/min and stops when the crystalline/amorphous interface reaches the region of maximum Pt concentration. When the annealing is done at ambient atmosphere the damage recovers completely at 1100^oC even for doses of the order of 5 × 10¹⁶ Pt⁺/cm² leading to the formation of Pt precipitates.     

Influence of annealing temperatures and time on the photoluminescence properties of Si nanocrystals embedded in SiO2

We report on the effects of annealing conditions on the photoluminescence from Si nanocrystal composites fabricated by implantation of Si ions into a SiO₂ matrix, followed by thermal treatment in a nitrogen atmosphere. The evolution of the photoluminescence under different annealing temperatures (900–1100 °C) and annealing time (0.5 up to 5 h) were systematically studied for the implanted samples. After annealing the spectra presented two photoluminescence bands: one centered at 610 nm and another around 800 nm. Combined with transmission electron microscopy, we conclude that the photoluminescence behavior of the two bands suggests different origins for their emissions. The 610 nm band has its origin related to matrix defects, while the 800 nm band can be explained by a model involving recombination via quantum confinement effects of excitons in the Si nanocrystals and the interfacial states recombination process confined in the interfacial region between nanocrystals and SiO₂ matrix.     

低束流钕离子注入外延硅薄层的结构研究

采用金属蒸气真空弧(MEWA)离子源以低束流方式将Nd离子注入到外延硅片中，经高温快速退火处理，制备了结晶良好的钕硅掺杂层。用扫描电子显微镜(SEM)、反射式高能电子衍射(RHEED)和X射线衍射(XRD)分析了在不同退火条件下样品注入层相结构的变化。研究结果表明，经高温热处理，注入层形成结晶良好的钕硅化合物，出现由Nd5Si4相向NdSi相转变的趋势。并对其转变过程进行了初步探讨。     

N、0、Ga、Mg和Si离子注入n型GaN样品的光致发光谱中蓝光发射带的研究

采用光致发光手段研究了几种不同注入离子N、O、Mg、Si和Ga对n型GaN蓝光发射带的影响。其中离子的注入剂量分别为10^13、10^14、10^15和10^16cm^-2，注入温度为室温。注入后的样品在900℃流动氮气环境下进行10min的热退火。通过对实验测得的光致发光谱的分析，给出了不同注入离子对n型GaN蓝光发射带的影响随注入剂量的变化关系以及该影响的相对强弱，进而确定蓝光发射起源于注入离子引入的间位缺陷。