1.25 Gbps并串转换CMOS集成电路

分析了由超高速易重用单元构造的树型和串行组合结构 ,实现了在输入半速率时钟条件下 1 0路到1路吉比特率并串转换。通过理论推导着重讨论了器件延时和时钟畸变对并串转换的影响 ,指出了解决途径。芯片基于 0 .3 5μm CMOS工艺 ,采用全定制设计 ,芯片面积为 2 4.1 9mm2 。串行数据输出的最高工作速率达到 1 .62 Gbps,可满足不同吉比特率通信系统的要求。在 1 .2 5 Gbps标准速率 ,工作电压 3 .3 V,负载为 5 0 Ω的条件下 ,功耗为 1 74.84m W,输出电压峰 -峰值可达到 2 .42 V,占空比为 49% ,抖动为 3 5 ps rms。测试结果和模拟结果一致 ,表明所设计的电路结构在性能、速度、功耗和面积优化方面的先进性。文中设计的芯片具有广泛应用和产业化前景。     

一种具有基极补偿技术的高速运算放大器

介绍了一种基于高速互补双极型工艺设计的宽带高速运算放大器。该运放输入级采用折叠式共射-共基结构能够增大输入级带宽,改进型威尔逊电流镜作为有源负载将差分输入信号转换为单端输出信号,并提高输入级差分增益;通过基极补偿技术补偿输入对管基极电流,降低输入偏置电流,提高运放精度。输出级采用双缓冲AB类输出级,能够消除交越失真,提高运放带负载能力,并为负载提供较大功率。Spectre仿真结果表明：在±15 V,25℃,1 kΩ负载电阻和10 pF负载电容条件下输入偏置电流为34.8 nA,静态电流≤8 mA,单位增益带宽365 MHz,压摆率428.1 V/μs, 0.01%精度建立时间为42.3 ns。     

高速BiCMOS运算跨导放大器的设计

基于全差分结构提出一种高速BiCMOS运算跨导放大器.该放大器采用两级放大结构实现,可用于8位250 Msps流水线结构模数转换器的采样/保持电路中.电路使用0.35μmBiCMOS工艺实现,由3.3 V单电源供电,经优化设计后,实现了2.1 GHz的单位增益带宽,直流开环增益61 dB,相位裕度50°,功耗16 mw,输出摆幅达到2 V;在2 pF的负载电容下,建立时间小于0.6 ns,转换速率1 200 V/μs.该放大器完全符合设计要求的性能指标.     

微电容超声换能器的前端专用集成电路设计

针对微电容超声换能器(CMUT)微弱电流信号检测的要求,设计了一种用于CMUT的前端专用集成电路——运算放大器(OPA)电路。运算放大器电路采用两级放大结构,第一级采用全差分折叠-共源共栅结构,输出级采用AB类控制的轨到轨输出级,在运算放大器电路反相输入端和输出端通过一个反馈电阻实现CMUT电流信号到电压信号的转换。采用GlobalFoundries 0.18μm的标准CMOS工艺进行了仿真设计和流片,芯片尺寸为226μm×75μm。仿真结果表明,运算放大器的开环增益为62 dB,单位增益带宽为30 MHz,在3 MHz处的输入参考噪声电压为2.9μV/Hz^1/2,电路采用±3.3 V供电,静态功耗为11 mW。测试结果表明仿真与实测结果相符,该运算放大器电路能够实现CMUT微弱电流信号检测功能。     

一种低压低功耗CMOS ULSI运算放大器单元

基于新型的折叠电流镜负载PMOS差分输入级拓扑、轨至轨(Rail-to-Rail)AB类低压CMOS推挽输出级模型、低压低功耗LV/LP技术和Cadence平台的实验设计与模拟仿真,采用2μmP阱硅栅CMOS标准工艺,得到了一种具有VT=±0.7V、电源电压1.1～1.5V、静态功耗典型值330μW、75dB开环增益和945kHz单位增益带宽的LV/LP运算放大器。该器件可应用于ULSI库单元及其相关技术领域,其实践有助于CMOS低压低功耗集成电路技术的进一步发展。     

恒电压增益的低电压Rail—to—Rail运算放大器

基于 Alcatel的 0 .3 5μm标准 CMOS工艺 (VT=0 .6 5 V) ,模拟实现了工作电压低达 1 .8V、电压增益偏差仅为 3 % (整个输入共模偏置电压范围内 )的运算放大器 ;电路的设计也避免了差分输入对中 PMOS管和 NMOS管的 W/L的严格匹配 ,增强了电路对工艺的坚固性。对输入差分对偏置电流的控制电路、差分输入对的有源负载和 AB类 Rail- to- Rail输出级进行了整体考虑 ,确保电压增益恒定的新型结构 ,使该运放在 2 V电源电压下 ,电压增益达到 80 d B(1 0 kΩ 电阻和 1 0p F电容并联负载 ) ,单位增益带宽为 1 2 MHz,相位裕量 72°     

低压高驱动能力的CMOS电流反馈运算放大器

基于0.18μm CMOS工艺,设计了一种具有低电压高驱动能力的电流反馈运算放大器。电路工作在1.8 V电源电压下,Spectre仿真的功耗为316μW,转换速率为112 V/μs,电流驱动能力达±1.5 mA。输入采用轨对轨结构,以提高输入电压摆幅;输出采用互补输出结构,使输出工作在甲乙类状态,以降低电路功耗。     

EL34 AB类推挽放大器与UL接法推挽放大器的比较

一、EL34 AB类推挽放大器EL34 AB类放大器电路原理如图1所示。它与B类工作时的电路结构完全相同。输出级的栅极偏置电压-24.6V时,屏极电流64mA,帘栅极电流8.3mA。屏极电压374V时,其功耗为24W;帘栅极电压360V时,其功耗为3W。EL34的屏极额定功耗为25W;帘栅极为8W,说明该放大器实际功耗低于极限功耗。     

低功耗CMOS限幅放大器设计

利用0.18μm CMOS工艺设计了应用于光接收机中的10Gb/s限幅放大器.此限幅放大器由输入缓冲,4级放大单元,一级用于驱动50Ω传输线的输出缓冲和失调电压补偿回路构成.输入动态范围为38dB(10mV～800mV),负载上的输出限幅在400mV,在3.3V电源电压下,功耗仅为99mW.整个芯片面积为0.8×1.3mm2.     

10 Gb/ s 0. 18 􀀁m CMOS 激光二极管驱动器芯片

基于0．18μm CMOS工艺设计的10Gb／s激光二极管驱动器电路。核心单元为两级直接耦合的差分放大器，电路中采用了并联峰化技术和放大级直接耦合技术以扩展带宽，降低功耗。模拟结果表明，在1．8V电源电压作用下该电路可工作在10Gb／s速率上，输入单端峰峰值为0．3V的差分信号时，在单端50Ω负载上的输出电压摆幅可达到1．4V，电路功耗约为85mW。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks