卢瑟福背散射谱和红外干涉反射谱研究冷注入锗离子

主要研究锗离子在77 K温度下的冷注入对单晶硅片表面的预非晶化效果, 并与室温注入情形予以对比. 卢瑟福背散射谱(RBS)和红外干涉反射谱被用于对非晶层的研究. 实验表明, 冷注入要比室温注入的退沟道效应更为显著, 反射率降低更为明显, 意味着引入的损伤更为严重, 更容易使硅单晶非晶化. 而且, 冷注入产生的最大损伤峰比室温注入的位于更深的位置, 相应的非晶层/硅单晶衬底界面有更深的推入. 结果还表明, 同样的注入温度下, 剂量越大, 损伤越严重.     

Investigation on Preparation and Fluorescence Properties of Oxy-Fluoride Glass Co-Doped with Er^3＋ and Yb^3＋

The glass sample based on the composition of 45PbF2-45GeO2-10WO3 co-doped with Yb^3 /Er^3 was prepared by the fusion method in two steps : melted at 950℃ for 20～25min then annealed at 380℃ for 4 h. Through the V-prism it is found that the refractive index of host glass and the sample are 1.517 and 1.65 respectively. The transmittance was observed by using the ultraviolet-visible-infrared spectrometer in the wavelength range from 0.35 to 2.5μm. The transmittance of the host glass is beyond 73%. That of the sample is beyond 50% and there are characteristic absorption peaks of rare-earth ions. The emission spectrum was measured by using the Hitachi F-4500 fluorescent spectrometer pumped by 980nm semiconductor laser. There are a strong emission peak at 530 nm and a weak peak at 650 nm.