Electroabsorption modulator using intersubband transitions in GaN-AlGaN-AlN step quantum wells

We calculate the high-speed modulation properties of an electroabsorption modulator for /spl lambda/=1.55 /spl mu/m based on Stark shifting an intersubband resonance in GaN-AlGaN-AlN step quantum wells. In a realistic simulation assuming an absorption linewidth /spl Gamma/=100 meV we obtain an RC-limited electrical f/sub 3dB//spl sim/60 GHz at an applied voltage swing V/sub pp/=2.8 V. We also show that a small negative effective chirp parameter suitable for standard single-mode fiber is obtained and that the absorption is virtually unsaturable. The waveguide is proposed to be based on the plasma effect in order to simultaneously achieve a strong confinement of the optical mode, a low series resistance, and lattice-matched cladding and core waveguide layers. Extrapolated results reflecting the decisive dependence of the high-speed performance on the intersubband absorption linewidth /spl Gamma/ are also given. At the assumed linewidth the modulation speed versus signal power ratio is on a par with existing lumped interband modulators based on the quantum confined Stark effect.     

Peripheral-coupled-waveguide MQW electroabsorption modulator for near transparency and high spurious free dynamic range RF fiber-optic link

Peripheral coupled waveguide (PCW) design has been deployed in InGaAsP multiple quantum-well (MQW) electroabsorption modulator (EAM) at 1.55-/spl mu/m wavelength. PCW enhances the optical saturation power and reduces the optical insertion loss and the equivalent V/sub /spl pi// simultaneously. A radio-frequency link using a 1.3-mm-long lumped-element PCW EAM has achieved experimentally a link gain of -3 dB, at 500 MHz and at input optical power of 80 mW. The corresponding two-tone multioctave spurious-free dynamic range (SFDR) at the same bias is measured at 118 dB/spl middot/Hz/sup 2/3/. The single-octave SFDR at the third-order null bias is 132 dB/spl middot/Hz/sup 4/5/.     

Optimization of the optical properties of a deeply etched semiconductor electrooptic modulator

A rigorous numerical study of a deeply etched semiconductor electrooptic modulator is presented. A Laplace equation solver followed by a full-vectorial modal solution technique for general anisotropic optical waveguides, all based on the versatile finite-element method, is used to find the potential distribution, the modulating electric fields, the changes in the permittivity tensor associated with the electrooptic effect, and the different modes of propagation. In particular, the optimization of the optical properties of the modulator structure such as the half-wave voltage length product V/sub /spl pi//L and the optical losses due to the imperfectly conducting electrodes has been carefully carried out and results reported. In addition, the effect of the waveguide parameters on the microwave properties such as the microwave index n/sub m/ and characteristic impedance Z/sub c/ is explained.     

A digital quadrature modulator with on-chip D/A converter

The first analog IF mixer stage of a transmitter can be replaced with this digital quadrature modulator. The modulator interpolates orthogonal input carriers by 16 and performs digital quadrature modulation at carrier frequencies f/sub s//4, -f/sub s//4,f/sub s//2 (f/sub s/ is the sampling frequency). A 12-b digital-to-analog (D/A) converter is integrated with the digital quadrature modulator. A segmented current source architecture is combined with a proper switching technique to reduce spurious components and to enhance dynamic performance. The digital quadrature modulator is designed to fulfill the spectral, phase, and EVM specifications of GSM, EDGE, and WCDMA base stations. The die area of the chip is 27.09 mm/sup 2/ (0.35-/spl mu/m CMOS technology) and the total power consumption is 1.02 W with 2.8 V at 500-MHz output sampling rate (0.78-W digital modulator, 0.24-W D/A converter).     

Computer-Aided Design of Three-Port Waveguide Junction Circulators

The complete performance of a lossless three-port H-plane waveguide junction loaded coaxially with various inhomogeneous ferrite cylanders has been evaluated over the waveguide bandwidth and compared with experiment. Qualitative agreement between the predicted and measured performance was generally good using only the first three modes, n=0/spl plusmn/1. It has been shown theoretically and verified experimentally that if the 4/spl pi/M/sub s/ of a homogeneous rod or the internal field is increased, the circulation frequency f/sub 0/ increases; conversely, if the pemittivity is increased, f/sub 0/ decreases. These conflicting effects are modified when the magnetization 4/spl pi/M/sub s/ and permittivity /spl epsiv/ are inhomogeneous. For example, if the 4/spl pi/M/sub s/(/spl gamma/) is small at the outer surface of the rod (with permittivity held constant), the effect on f/sub 0/ is very small; but if 4/spl pi/M/sub s/(spl gamma) approaches zero for /spl gamma/ small, then f/sub 0/ may decrease significantly. On the other hand, if /spl epsiv//sub/spl gamma//(/spl gamma/) approaches unity near the outer surface of the rod, f/sub 0/ may increase significantly; but if /spl epsiv//sub/spl gamma//(/spl gamma/) approaches unity near the center of the rod, f/sub 0/ is affected relatively little. The inhomogeneous structure has also shown that decreasing the ferrite volume may improve the performance, and high-power applications are suggested. With a conducting pin down the center of the ferrite, relative bandwidths of 40-50 percent are predicted.     

Low-voltage high-speed travelling wave InGaAsP-InP phase modulator

A high-speed low-drive-voltage travelling wave electrodes InGaAsP-InP phase modulator operated at 1.55 /spl mu/m is demonstrated. The modulator is fabricated using a multiple quantum-well optical waveguide with an on chip integrated termination resistor. A small signal bandwidth of 35 GHz and a V/spl pi/ of 1.8 V has been demonstrated.     

Electrooptic modulation of multisilicon-on-insulator photonic wires

This paper proposes and analyzes electrically modulated submicrometer-size high-index-contrast waveguides (photonic wires) based on a multisilicon-on-insulator (MSOI) platform. Metal-oxide-semiconductor junctions are used to control the effective refractive index of the waveguides. The electrooptic structures are electrically and optically modeled. The performances of the studied configurations are analyzed and compared in terms of phase modulation efficiency, optical losses, and operation speed, and the feasibility of their fabrication is discussed. Calculations indicate that the proposed schemes can be used to achieve highly efficient phase shifters (V/sub /spl pi//L/sub /spl pi//<1 V-cm) based on photonic wires on MSOI, with data transmission rates ranging from 3 to 10 Gb/s.     

Low-loss electrooptic BaTiO/sub 3/ thin film waveguide modulator

A strip-loaded electrooptic waveguide modulator based on an epitaxial BaTiO/sub 3/ thin film was fabricated and characterized for the first time. The strip-loaded waveguide structure greatly improves waveguide propagation and polarization-dependent loss performance. A propagation loss of 1.1 dB/cm and polarization dependent loss of 0.1 dB/cm were measured. The electrooptic waveguide modulator exhibited a half-wave voltage-interaction length product of 4.5 V /spl middot/ cm at a wavelength of 1542 nm. The measured effective electrooptic coefficient of the as-grown BaTiO/sub 3/ waveguide modulator was 38 pm/V. The experimental results indicate that a strip-loaded thin film waveguide modulator is suitable for photonic applications.     

40 Gbit/s n-i-n InP Mach-Zehnder modulator with a /spl pi/ voltage of 2.2 V

Using an n-i-n heterostructure, a travelling-wave Mach-Zehnder modulator on an InP substrate has been developed. An extremely small /spl pi/ voltage (V/sub /spl pi//) of 2.2 V has been obtained, even for a short signal-electrode length of 3 mm. Wavelength-insensitive extinction characteristics and 40 Gbit/s operation are described.     

High-speed AJL8/APC polymer modulator

High-speed polymer modulators were fabricated using low-V/sub /spl pi// AJL8 chromophore in amorphous polycarbonate, and highly calibrated frequency response measurements were obtained using convenient coplanar-microstrip transitions. These Mach-Zehnder modulators show good frequency response to 50 GHz, with a loss and velocity mismatch-limited V/sub /spl pi// at 50 GHz <12 V. The measurements establish AJL8 as an excellent candidate for future military analog optical links.     

Theory of Direct-Coupled-Cavity Filters

A new theory is presented for the design of direct-coupled-cavity filters in transmission line or waveguide. It is shown that for a specified range of parameters the insertion-loss characteristic of these filters in the case of Chebyshev equal-ripple characteristic is given very accurately by the formula P/sub 0/ / /P/sub L/ = 1+h/sup 2/T/sub n//sup 2/[/spl omega//sub 0/ / /spl omega/ sin(/spl pi/ /spl omega/ / /spl omega//sub 0/) / sin/spl theta//sub 0/'] where h defines the ripple level, T/sub n/ is the first-kind Chebyshev polynomial of degree n, /spl omega/ / /spl omega//sub 0/ is normalized frequency, and /spl theta//sub 0/' is an angle proportional to the bandwidth of a distributed lowpass prototype filter. The element values of the direct-coupled filter are related directly to the step impedances of the prototype whose values have been tabulated. The theory gives close agreement with computed data over a range of parameters as specified by a very simple formula. The design technique is convenient for practical applications.     

A 310/spl deg//3.6-dB K-band phaseshifter using paraelectric BST thin films

Ferro- and para-electric BaSrTiO/sub 3/ (/spl epsiv//sub r//spl sim/350 and tg/spl delta//spl sim/5/spl times/10/sup -2/ at 0V) thin films were deposited by low-cost sol-gel techniques. Subsequently, the films were used for fabricating coplanar waveguide phaseshifters using tunable finger-shaped capacitors. A 310/spl deg/ phaseshift was obtained at 30GHz and 35V of tuning voltage with 3.6dB of insertion loss yielding a figure of merit of 85/spl deg//dB.     

Electroabsorption waveguide modulators at 1.3 /spl mu/m fabricated on GaAs substrates

An InGaAs-InAlAs multiple-quantum-well (MQW) electroabsorption (EA) waveguide modulator fabricated on a GaAs substrate has been designed and characterized at 1.3-/spl mu/m wavelength for microwave signal transmission on an analog fibre-optic link. The modulator structure with a lattice constant 2.5% larger than that of GaAs is grown upon a 0.7-/spl mu/m-thick three-stage compositionally step-graded In/sub z/Al/sub 1-z/As relaxed buffer. The waveguide modulator exhibits a high-electrooptic slope efficiency of 0.56 V/sup -1/, a 3-dB electrical bandwidth of 20 GHz, and a large optical saturation intensity in excess of 17 mW. These high-speed optoelectronic modulators could potentially be integrated with on-chip GaAs electronic driver circuits.     

Time-frequency localisation of Shannon wavelet packets

It is well known that the 2/spl pi/ minimally supported frequency scaling function /spl phi//sup /spl alpha//(x) satisfying /spl phi//spl circ//sup /spl alpha//(/spl omega/)=/spl chi//sub (-/spl alpha/,2/spl pi/-/spl alpha/)/(/spl omega/), 0相似文献   

Monolithically integrated InGaAs-AlGaInAs Mach-Zehnder Interferometer optical switch using quantum-well intermixing

A highly efficient monolithically integrated Mach-Zehnder interferometer (MZI) optical switch based on a 1.5-/spl mu/m InGaAs-AlGaInAs multiple-quantum-well structure is reported. The device was fabricated by integrating phase shifter sections with bandgap-shifted low-loss waveguides obtained by a single step sputtered SiO/sub 2/-annealing quantum-well intermixing technique. Evaluation of the refractive index change induced by current injection (plasma, band-filling, band-shrinkage effects) and applied electric field (quantum confined Stark effect) based on the MZI was investigated. A device with an active length of 400 /spl mu/m in one of the MZI arms had an extinction ratio /spl ges/20 dB with a half-wavelength current (I/sub /spl pi//) and half-wavelength voltage V/sub /spl pi// as low as 3.2 mA and 3.5 V (1.9 V in push-pull configuration), respectively.     

On the /spl theta/-coverage and connectivity of large random networks

Wireless planar networks have been used to model wireless networks in a tradition that dates back to 1961 to the work of E. N. Gilbert. Indeed, the study of connected components in wireless networks was the motivation for his pioneering work that spawned the modern field of continuum percolation theory. Given that node locations in wireless networks are not known, random planar modeling can be used to provide preliminary assessments of important quantities such as range, number of neighbors, power consumption, and connectivity, and issues such as spatial reuse and capacity. In this paper, the problem of connectivity based on nearest neighbors is addressed. The exact threshold function for /spl theta/-coverage is found for wireless networks modeled as n points uniformly distributed in a unit square, with every node connecting to its /spl phi//sub n/ nearest neighbors. A network is called /spl theta/-covered if every node, except those near the boundary, can find one of its /spl phi//sub n/ nearest neighbors in any sector of angle /spl theta/. For all /spl theta//spl isin/(0,2/spl pi/), if /spl phi//sub n/=(1+/spl delta/)log/sub 2/spl pi//2/spl pi/-/spl theta//n, it is shown that the probability of /spl theta/-coverage goes to one as n goes to infinity, for any /spl delta/>0; on the other hand, if /spl phi//sub n/=(1-/spl delta/)log/sub 2/spl pi//2/spl pi/-/spl theta//n, the probability of /spl theta/-coverage goes to zero. This sharp characterization of /spl theta/-coverage is used to show, via further geometric arguments, that the network will be connected with probability approaching one if /spl phi//sub n/=(1+/spl delta/)log/sub 2/n. Connections between these results and the performance analysis of wireless networks, especially for routing and topology control algorithms, are discussed.     

High-speed and low-driving-Voltage thin-sheet X-cut LiNbO/sub 3/ Modulator with laminated low-dielectric-constant adhesive

We present a novel thin-sheet X-cut LiNbO/sub 3/ optical modulator structure which can be fabricated by precise polishing and lapping to obtain a thinner LiNbO/sub 3/ substrate for a lower driving voltage in addition to velocity matching and impedance matching. We demonstrated that the fabricated modulator had a driving voltage V/spl pi/ of 2 V and zero chirp for 40-Gb/s operation and had a high potential for suppressed dc drift, and long-term reliability.     

Ballistic MOSFET reproduces current-voltage characteristics of an experimental device

The ballistic MOSFET characteristics are compared in detail with those of the experimental 70-nm device at low temperatures reported by Sai-Halasz et al. (1987). The saturated region characteristics for V/sub G//spl les/0.8 V show good agreement and a proper consideration of higher subbands significantly improves agreement for V/sub G//spl ges/1.0 V. The discrepancy is large in the linear region due to carrier scattering. The carrier backscattering mechanism and the bias effect are discussed.     

Microwave Characterization of Partially Magnetized Ferrites

In order to assist the microwave engineer in predicting the performance of partially magnetized devices, we have characterized the microwave permeability of partially magnetized materials. The real part of the tensor permeability elements, /spl mu/, /spl kappa/, and /spl mu//sub z/, depends primarily on the parameters /spl gamma/4/spl pi/M//spl omega/ and /spl gamma/4/spl pi/M/sub s/ / /spl omega/. Empirical formulas have been developed which show the dependence. At frequencies sufficiently below /spl omega/ = /spl pi/4/spl pi/M/sub s/, the loss can be characterized by the value of /spl mu/' at 4/spl pi/M = 0./spl mu/, /spl kappa/, and /spl mu//sub z/ depend weakly on composition, whereas /spl mu/' (4/spl pi/M = 0) does depend upon the chemical composition.     

Load modulation power amplifier with lumped-element combiner for IEEE 802.11b/g WLAN applications

A new monolithic microwave integrated circuit power amplifier for 802.11b/g wireless local area network (WLAN) has been implemented using the load modulation concept of a Doherty amplifier. The /spl lambda//4 transmission line for the load modulation circuit of the carrier amplifier is replaced by a lumped element based /spl pi/-network, which dual functions as an output matching network, simultaneously. This amplifier shows that error vector magnitude is about 4.6% and power added efficiency (PAE) about 31.8% at P/sub out/ of 19 dBm for a 802.11g 64QAM signal. PAE of the power amplifier is about 49.6%, and adjacent channel leakage ratio below 37.2dBc at 11 MHz offset at P/sub out/ of 23 dBm for the 802.11b complementary code keying signal