Characterization of ZnO:Al/Au/ZnO:Al trilayers for high performance transparent conducting electrodes

Symmetric ZnO:Al/Au/ZnO:Al trilayers were sputter-deposited and characterized for transparent conducting electrodes, varying the thickness of the ZnO:Al (AZO) and Au layers. The optical transmission for normal light incidence is optimum for an AZO thickness of 50 nm, due to the suppression of reflection. In this case, the transmittance is more than 0.7 for wavelengths above 400 nm and for a Au thickness of 5 nm. At the same time, the sheet resistance is approx. 30 Ω, which can be decreased to 12 Ω with the increase of the Au thickness to 9 nm. This is achieved with a moderate loss in the optical transmission. The figure of merit for transparent conducting electrodes, as introduced by G. Haacke (J. Appl. Phys. 47 (1976) 4086) yields values from 29.4 × 10^− 3 to 6.9 × 10^− 3 Ω^− 1, depending on the Au thickness and the considered wavelength range.     

Electrons emission from laser induced metallic plasmas

Localized behavior of laser induced metallic plasmas has been investigated using Langmuir probe as an electrostatic diagnostic tool. A Q-switched Nd:YAG pulsed laser (1064 nm, 12 ns, 1.1 MW) is tightly focused on metal targets (Cu, Zn, Cd, Ag, Pt and Au) having dimensions 2 × 2 × 0.2 cm³ under vacuum ∼10⁻³ torr. The varying biasing voltages are applied to Langmuir probe. The electric signals are recorded on two channel 200 MHz digital storage oscilloscope (UNI T - UTT 2202). A comparison shows strong dependence of electron parameters (temperature, density, Debye length, plasma frequency and number of particles in Debye sphere) in plasmas on target materials' properties (atomic number, surface binding energy etc.). The maximum values for electron density (8.08502 × 10¹⁷ m⁻³), Debye length (8.07066 × 10⁻⁴ m), plasma frequency (5.19627 × 10¹⁰ Hz) are found for silver and copper metals, respectively, where as the electron temperature shows variation in this trend i.e. maximum value (1.36581 × 10⁶ K) for cadmium and minimum value is for gold (1.0008 × 10⁵ K). the maximum value of number of particles in Debye length at +15 V (1.47 × 10²⁶) for Pt and that minimum for Ag (2.1355 × 10⁷).     

Electrical characterization of the polyaniline/p-silicon and polyaniline titanium dioxide tetradecyltrimethylammonium bromide /p-silicon heterojunctions

Au/PANI/p-Si/Al and Au/PANI TiO₂ TTAB/p-Si/Al heterojunctions have been fabricated by spin coating of soluble polyaniline (PANI) and PANI titanium dioxide (TiO₂) tetradecyltrimethylammonium bromide (TTAB) on the chemically cleaned p-Si substrates. The thicknesses of the polymeric films have been determined by a profilometer. The current-voltage (I-V) characteristics of the heterojunctions have been obtained in the temperature range of 98-258 K. These devices have showed the rectifying behavior such as diode. The I-V characteristics of the devices have been analyzed on the basis of the standard thermionic emission theory at low forward bias voltage regime. It has been shown that the values of ideality factor decrease while the values of barrier height increase with increasing temperature. This temperature dependence has been attributed to the presence of barrier inhomogeneities at the organic/inorganic semiconductor interface. Furthermore, analysis of the double logarithmic I-V plots at higher forward bias voltages at all temperatures indicates that transport through the organic thin film is explained by a space-charge-limited current process characterized by exponential distribution of traps within the band gap of the organic film. The total concentration of traps has been found to be 3.52 × 10¹⁴ cm^− 3 and 3.14 × 10¹⁵ cm^− 3 for PANI and PANI TiO₂ TTAB layer, respectively.     

Femtosecond pulsed laser ablation and deposition of titanium carbide

In this work we have evaporated a titanium carbide target by an Nd:glass laser with 250 fs pulse duration. The plasma produced from the ablation has been characterized by Intensified Coupled Charge Device (ICCD) fast imaging, optical emission spectroscopy and quadrupole mass spectrometry, while X-ray Diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDX), X-ray Photoelectron Spectroscopy (XPS) and Scanning and Transmission Electron Microscopy have been used to study the deposited film morphology and composition. The plume shape and front velocity are very similar to those found in other systems and are typical of femtosecond ablation. In particular the front velocity is 1.1 × 10⁷ cm s^− 1 at a laser fluence of 1.9 J cm^− 2, while the value of the cosine exponent is 4.5 in the same conditions. In the TiC system a delayed emission, found by ICCD imaging and emission spectroscopy, is also present. In fact, although the emission involved in the “traditional” plume ends after about 1 μs, the target is still hot and gives origin to another emission, expanding with a velocity that is about two orders of magnitude lower compared to that of the traditional plume (2.2 × 10⁴ cm s^− 1 at a laser fluence of 1.9 J cm^− 2).The results of the analysis of both the gaseous plume and the deposited films seem to indicate that in the case of TiC system the presence of a large number of particles ejected from the target is responsible for the formation of the films. XPS and EDX data indicate that the stoichiometry of the target is preserved in the films, while XRD analysis shows that the films are amorphous in structure.     

Titanium diffusion in gold thin films

In the present study, diffusion phenomena in titanium/gold (Ti/Au) thin films occurring at temperatures ranging between 200 and 400 °C are investigated.The motivation is twofold: the first objective is to characterize Ti diffusion into Au layer as an effect of different heat-treatments. The second goal is to prove that the implementation of a thin titanium nitride (TiN) layer between Ti and Au can remarkably reduce Ti diffusion.It is observed that Ti atoms can fully diffuse through polycrystalline Au thin films (260 nm thick) already at temperatures as a low as 250 °C. Starting from secondary ion mass spectroscopy data, the overall diffusion activation energy ΔE = 0.66 eV and the corresponding pre-exponential factor D₀ = 5 × 10^− 11 cm²/s are determined. As for the grain boundary diffusivity, both the activation energy range 0.54 < ΔE_gb < 0.66 eV and the pre-exponential factor s₀D_gb0 = 1.14 × 10^− 8 cm²/s are obtained. Finally, it is observed that the insertion of a thin TiN layer (40 nm) between gold and titanium acts as an effective diffusion barrier up to 400 °C.     

Improved ohmic contacts on pentacene based on Au with ultraviolet irradiation treatment

The effect of ultraviolet irradiation treatment on a reduction in contact resistivity at the pentacene/Au interfaces was investigated using current-voltage and X-ray photoelectron spectroscopy in this study. The contact resistivity was drastically decreased from 2.2 × 10⁷ to 9.5 × 10² Ω cm² by the treatment. We suggested that the lower contact resistivity of the pentacene/Au sample with ultraviolet irradiation treatment than the pentacene/Au sample without ultraviolet irradiation treatment may be attributed to the heightened conductivity of pentacene near the pentacene/Au interface resulting from the incorporation of oxygen (from the Au surfaces with ultraviolet irradiation treatment) in pentacene near the interface.     

Conductive Ga doped ZnO/Cu/Ga doped ZnO thin films prepared by magnetron sputtering at room temperature for flexible electronics

Ga doped ZnO(GZO)/Cu/GZO multilayers were deposited by magnetron sputtering on polycarbonate substrates at room temperature. We investigated the structural, electrical, and optical properties of multilayers at various thicknesses of Cu and GZO layers. The lowest resistivity value of 3.3 × 10^− 5 Ω cm with a carrier concentration of 2.9 × 10²² cm^− 3 was obtained at the optimum Cu (10 nm) and GZO (10 nm) layer thickness. The highest value of figure of merit φ_TC is 2.68 × 10^− 3 Ω^− 1 for the GZO (10 nm)/Cu(10 nm)/GZO(10 nm) multilayer. The highest average near infrared reflectivity in the wavelength range 1000-2500 nm is as high as 70% for the GZO(10 nm)/Cu(10 nm)/GZO(10 nm) multilayer.     

Contact resistance variation in top-contact organic thin-film transistors with the deposition rate of Au source/drain electrodes

We investigated the effect of the deposition rate of Au source/drain electrodes on the contact resistance of the top-contact organic thin-film transistors (OTFTs). For the formation of source/drain contacts, Au was thermally deposited at the different rates of 0.5, 1.0, 5.0, and 13.0 Å/s. With increasing the Au deposition rate, the contact resistance extracted at the gate voltage of − 30 V could be reduced from 14 × 10⁶ to 2.4 × 10⁶ Ω, resulting in the characteristic improvements of the top-contact OTFT. It is also found that the contact resistance significantly affects the off-state currents of the device having the short channel length of 10 μm. The control of the deposition rate of source/drain electrodes is suggested to optimize the contact properties of the top-contact OTFTs as well as the device performance.     

Atomistic simulations of shearing friction and dynamic adhesion of double-walled carbon nanotubes on Au substrates

Functional gecko-mimetic adhesives have attracted a lot of research interest in recent years. In this paper, the physical adhesion behavior of (5, 5)@(10, 10) double-walled carbon nanotubes (DWCNTs) on an Au substrate is investigated by performing detailed, fully atomistic molecular dynamics (MD) simulations. The effects of adhesion temperature, tube length, and peeling velocity on the binding energy, normal adhesion force, lateral shearing friction, and adhesion time are thoroughly analyzed. The simulation results indicate that the binding energy (per unit length) of the DWCNT–Au adhesive system is −26.7 × 10⁻² eV/Å, which is 7.2% higher than that of single-walled counterparts. The tip-surface adhesion force for a single DWCNT is calculated to be 1.4 nN, and thus the adhesive strength of a DWCNT array is about 1.4 × 10¹–1.4 × 10³ N/cm² (corresponding to an aerial density of 10¹⁰–10¹² tubes/cm²). Two distinctive friction modes, namely (i) sliding friction (by the nanotube wall) and (ii) sticking friction (by the nanotube tip), are elucidated in term of the phase relationship of atomic friction forces. Moreover, the effective Young’s moduli of double- and single-walled CNTs are obtained using MD simulations combined with Euler–Bernoulli beam theory. The calculation results show good agreement with previously reported numerical and experimental results.     

Investigation of bonding strength and sealing behavior of aluminum/stainless steel bonded at room temperature

This article reports the direct bonding of aluminum (Al) [99.999% (5N), 99% (2N)] and stainless steel SUS (304, 316) without heating for sealing in the ultra high vacuum (UHV) components. For bonding, the smooth surfaces of the Al and SUS specimens were activated using argon fast atom beam (Ar-FAB) for 1-60 and 60 min, respectively, in a background pressure of 6.0 × 10⁻⁵ Pa followed by close contact under an external pressure of 960 N. High bonding strength resulted in the bonded mates of Al and SUS304 activated for 30 and 60 min, respectively, due to the adhesion forces of the surface atoms. Tensile pulling tests showed bulk fractures in Al with impurity dependent bonding strength. The bonding strengths for the Al5N/SUS304 and Al2N/SUS304 specimens were higher than 60 and 100 MPa, respectively. For the sealing test, the smooth surface of the SUS316 flange containing a hole was bonded with Al after surface activation 60 and 30 min, respectively. Leak rates for Al5N/SUS316 and Al2N/SUS316 specimens were 1.5 × 10⁻¹¹ and 2.0 × 10⁻¹¹ Pa m³/s, respectively. These results satisfy the permissible leakage of a large-sized UHV chamber. Time dependence of the leak test behavior for both specimens shows a stable leak rate. Therefore, the sealing of Al/SUS316 may be utilized for the fabrication of corrosion free joints for fluid flow in the cooling of electron guns of small size equipment such as portable scanning electron microscopes in UHV pressure.     

Irradiation-induced gold silicide formation and stoichiometry effects in ion beam-mixed layer

The irradiation-induced silicide formation in ion beam-mixed layer of Au/Si(1 0 0) system was investigated by using 200 keV Kr⁺ and 350 keV Xe⁺ ions to fluences ranging from 8×10¹⁴ to 1×10¹⁶ ions/cm² at room temperature. The thickness of Au layer evaporated on Si substrate was ∼500 Å. Rutherford backscattering spectrometry (RBS) experiments were carried out to study the irradiation effects on the mixed layers. We observed that at the fluence of 1×10¹⁶ Kr⁺/cm² and starting from the fluence of 8×10¹⁴ Xe⁺/cm², a total mixing of the deposited Au layer with Si was obtained. RBS data corresponding to the fluences of 1×10¹⁶ Kr⁺/cm² and 8×10¹⁴ Xe⁺/cm² clearly showed mixed layers with homogenous concentrations of Au and Si atoms which can be attributed to gold silicides.The samples irradiated to fluences of 1×10¹⁶ Kr⁺/cm² and 1×10¹⁶ Xe⁺/cm² were also analyzed by X-ray photoelectron spectroscopy (XPS). The observed chemical shift of Au 4f and Si 2p lines confirmed the formation of gold silicides at the surface of the mixed layers. Au₂Si phase is obtained with Kr⁺ irradiation whereas the formed phase with Xe⁺ ions is more enriched in Si atoms.     

Dielectric/metal/dielectric structures using copper as metal and MoO3 as dielectric for use as transparent electrode

Transparent conductive oxide/metal/oxide, where the oxide is MoO₃ and the metal is Cu, is realized and characterized. The films are deposited by simple joule effect. It is shown that relatively thick Cu films are necessary for achieving conductive structures, what implies a weak transmission of the light. Such large thicknesses are necessary because Cu diffuses strongly into the MoO₃ films. We show that the Cu diffusion can be strongly limited by sandwiching the Cu layer between two Al ultra-thin films (1.4 nm). The best structures are glass/MoO₃ (20 nm)/Al (1.4 nm)/Cu (18 nm)/Al (1.4 nm)/MoO₃ (35 nm). They exhibit a transmission of 70% at 590 nm and a resistivity of 5.0 · 10^− 4 Ω cm. A first attempt shows that such structures can be used as anode in organic photovoltaic cells.     

The effect of 0.5 wt.% Ce additions on the electromigration of Sn9Zn BGA solder packages with Au/Ni(P)/Cu and Ag/Cu pads

It has previously been established that Sn-9Zn-0.5Ce alloy possesses mechanical properties superior to those of undoped Sn-9Zn alloy, and is free of the problem of rapid whisker growth. However, no detailed studies have been conducted on the electromigration behavior of Sn-9Zn-0.5Ce alloy. In this research, Sn-9Zn and Sn-9Zn-0.5Ce solder joints with Au/Ni(P)/Cu and Ag/Cu pads were stressed under a current density of 3.1 × 10⁴ A/cm² at room temperature for various periods of time. Due to finer grain sizes, the electromigration effects were more severe in Sn-9Zn-0.5Ce solder joints than in Sn-9Zn solder joints when joint temperature was around 80 °C. In addition, both solder joints (Sn-9Zn and Sn-9Zn-0.5Ce) with Au/Ni(P)/Cu pads possess longer current-stressing lifetimes than those with Ag/Cu pads because Ni is more resistant than Cu to migration driven by electron flow.     

Control of aluminum doping of ZnO:Al thin films obtained by high-power impulse magnetron sputtering

This work reports a method used to control Al doping of ZnO thin films deposited by high-power impulse magnetron sputtering of a pure Zn target in low-pressure Ar/O₂ gas mixture. The method uses sputtering of an electrically negative biased aluminum electrode placed in the proximity of the negative glow of the magnetron discharge. Resonant laser absorption measurements of Al atom concentration in vapor phase and the X-ray Photoelectron Emission Spectroscopy measurements of Al concentration in the deposited ZnO:Al films confirm that the electrode biasing potential is the key parameter that controls the Al doping process. Optically transparent ZnO:Al films with resistivity as low as 3.6 × 10^− 3 Ω × cm have been obtained at an optimum value of Al concentration of 1.5 at.%. It has been found that the film electrical conductivity is limited by the effect of decreasing of crystalline grain size in the films with the increased Al doping concentration.     

Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure

In the present work, thin film of polyvinyl alcohol (PVA) is fabricated on n-type InP substrate as an interfacial layer for electronic modification of Au/n-InP Schottky contact. The electrical characteristics of Au/PVA/n-InP Schottky diode are determined at annealing temperature in the range of 100-300 °C by current-voltage (I-V) and capacitance-voltage (C-V) methods. The Schottky barrier height and ideality factor (n) values of the as-deposited Au/PVA/n-InP diode are obtained at room temperature as 0.66 eV (I-V), 0.82 eV (C-V) and 1.32, respectively. Upon annealing at 200 °C in nitrogen atmosphere for 1 min, the barrier height value increases to 0.81 eV (I-V), 0.99 eV (C-V) and ideality factor decreases to 1.18. When the contact is annealed at 300 °C, the barrier height value decreases to 0.77 eV (I-V), 0.96 eV (C-V) and ideality factor increases to 1.22. It is observed that the interfacial layer of PVA increases the barrier height by the influence of the space charge region of the Au/n-InP Schottky junction. The discrepancy between Schottky barrier heights calculated from I-V and C-V measurements is also explained. Further, Cheung's functions are used to extract the series resistance of Au/PVA/n-InP Schottky diode. The interface state density as determined by Terman's method is found to be 1.04 × 10¹² and 0.59 × 10¹² cm^− 2 eV^− 1 for the as-deposited and 200 °C annealed Au/PVA/n-InP Schottky diodes. Finally, it is seen that the Schottky diode parameters changed with increase in the annealing temperature.     

Influence of working pressure on ZnO:Al films from tube targets for silicon thin film solar cells

Mid-frequency magnetron sputtering of aluminum doped zinc oxide films (ZnO:Al) from tube ceramic targets has been investigated for silicon based thin film solar cell applications. The influence of working pressure on structural, electrical, and optical properties of sputtered ZnO:Al films was studied. ZnO:Al thin films with a minimum resistivity of 3.4 × 10⁻⁴ Ω cm, high mobility of 50 cm²/Vs, and high optical transmission close to 90% in visible spectrum region were achieved. The surface texture of ZnO:Al films after a chemical etching step was investigated. A gradual increase in feature sizes (diameter and depth) was observed with increasing sputter pressure. Silicon based thin film solar cells were prepared using the etched ZnO:Al films as front contacts. Energy conversion efficiencies of up to 10.2% were obtained for amorphous/microcrystalline silicon tandem solar cells.     

Electrical conduction mechanism in plasma polymerized 1-Benzyl-2-methylimidazole thin films under static electric field

The electrical properties of alternating current plasma polymerized 1-Benzyl-2-methylimidazole (PPBMI) thin films were investigated to determine the dominant carrier transport mechanism under static electric field. Fourier transform infrared (FTIR) spectroscopy was employed for structural analysis of the monomer and that of the PPBMI. The FTIR analyses demonstrate that the chemical structure of PPBMI thin films is changed to some extent from that of the monomer. Current density-voltage characteristics were studied over the temperature range from 300 to 423 K for PPBMI thin films of thicknesses 100, 150, 200 and 250 nm in Al/PPBMI/Al sandwich configuration. It is revealed that the dominant conduction mechanism in PPBMI thin films is space charge limited conduction. The activation energy for the conduction mechanism is found to be 0.43 eV. Carrier mobility, free carrier density and trap density are found to be 1.48 × 10^− 18 to 6.35 × 10^− 18 m² V^− 1 s^− 1, 1.59 × 10²³ to 5.85 × 10²³ m^− 3 and 2.50 × 10²⁴ to 5.00 × 10²³ m^− 3, respectively.     

Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique

Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS₂ and CuInSe₂ thin films. Films with thickness < 1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5 × 10⁵ cm/s for CuInS₂, 1 × 10³ cm/s for CuInSe₂), while stoichiometric films exhibited high mobility (0.6 cm²/V s for CuInS_2, 32 cm²/V s for CuInSe₂) and high minority carrier lifetime (0.35 µs for CuInS₂, 12 µs for CuInSe₂).     

Electromagnetic interference shielding,mechanical properties and water absorption of copper/bamboo fabric (Cu/BF) composites

Copper/bamboo fabric (Cu/BF) composites were prepared by electroless deposition via a tin-free process. The process involved 3-aminopropyltrimethoxysilane modification, noble metal (Au or Pd) activation and electroless copper planting of BF. The copper deposition rate via Pd catalytic process was 1.01 mg/cm² h, higher than that by Au catalytic process (0.85 mg/cm² h). The microstructure of Cu/BF composites was analyzed by scanning electron microscopy (SEM), and the copper coatings were composed of ball-shaped copper particles. The composition and chemical state of copper layers were measured by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) spectra, Cu⁰ was detected but copper dioxide was not found in both spectra. The electromagnetic interference, water absorption, mechanical tension, conductivity and adhesion properties of Cu/BF samples (weight ratio of Cu/BF: 0.36 ± 0.01) were measured to obtain the qualities of the composites.     

Low power CW optical limiting properties of bis(2-aminopyridinium)-succinate-succinic acid (2APS) single crystal

The increase in the usage of low power CW lasers in various applications needs for the design of optical limiters with low thresholds. The optical limiting properties and nonlinear refractive index (n₂ = −2.4189 × 10⁻⁸ cm²/W) of transparent organic crystal bis(2-aminopyridinium)-succinate-succinic acid (2APS) single crystal using continuous wave He-Ne laser excitation following Z-scan method have been evaluated. The sample exhibited negative (defocusing) nonlinearity. This thermally induced defocusing nature of 2APS crystal can be used to design the low power optical limiters. As the origin for this nonlinearity is thermal, a complete thermal transport properties such as thermal diffusivity (α_s = 5.97 ± 0.03 × 10⁻³ cm²/s), thermal effusivity (e_s = 1.94 ± 0.02 × 10⁻² J/cm²-K-s^1/2), thermal conductivity (k_s = (4. 66 ± 0.04) × 10⁻³ W/cm-K)) and specific heat capacity (C_ps = (5.61 ± 0.05) × 10⁻¹ J/g-K) of the material were studied following the photopyro electric (PPE) technique.