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1.
用光致荧光谱、傅里叶变换红外光谱(FTIR)和扫描电子显微镜(SEM)对用阳极氧化法制成的多孔硅层在1%NH3/H2O2溶液中的腐蚀现象进行了研究。红外分析表明,Si-O键和H-O键的强度随NH3/H2O2溶液的腐蚀时间的增加而增加,Si-H键强主匠随腐蚀时间增加而减少。光致荧光谱的峰值在腐蚀开始时先下降后上升,半高宽变窄,谱峰的以边明显蓝移。分析研究表明,1%NH3/H2O2溶液对多孔硅层有腐蚀 相似文献
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通过射频溅射的方法在单晶硅衬底上沉积了β-SiC薄膜,用HF酸(40%)和C2H5OH(99%)的混合溶液对β-SiC薄膜进行了电化学腐蚀处理,形成了多孔β-SiC(PSC)薄膜.利用荧光分光光度计研究了样品的光致发光(PL)特性,用原子力显微镜(AFM)和扫描电子显微镜(SEM)观察了样品腐蚀前后的表面形貌.结果表明:多孔β-SiC薄膜具有较强的蓝光发射特性;通过改变腐蚀时间,可以改变蓝光发射的强度,也可以观察到蓝光-红光同时发射的现象;降低HF酸的浓度,蓝光发射峰明显变弱,并对多孔β-SiC薄膜的发光机理及其微观结构进行了讨论. 相似文献
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多孔β-SiC薄膜的蓝光发射 总被引:4,自引:0,他引:4
通过射频溅射的方法在单晶硅衬底上沉积了βSiC薄膜,用HF酸(40 % )和C2 H5OH(99% )的混合溶液对βSiC薄膜进行了电化学腐蚀处理,形成了多孔βSiC(PSC)薄膜.利用荧光分光光度计研究了样品的光致发光(PL)特性,用原子力显微镜(AFM)和扫描电子显微镜(SEM )观察了样品腐蚀前后的表面形貌.结果表明:多孔βSiC薄膜具有较强的蓝光发射特性;通过改变腐蚀时间,可以改变蓝光发射的强度,也可以观察到蓝光红光同时发射的现象;降低HF酸的浓度,蓝光发射峰明显变弱,并对多孔βSiC薄膜的发光机理及其微观结构进行了讨论. 相似文献
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Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region. 相似文献
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电化学脉冲腐蚀法制备窄峰发射的多孔硅微腔 总被引:2,自引:0,他引:2
用电化学脉冲腐蚀方法制备了多孔硅微腔,讨论了脉冲电化学腐蚀的参数--周期、占空比对多孔硅多层膜制备的影响,并用了以HF酸扩散为基础的多孔硅动态腐蚀机理对实验结果进行解释,认为在用电化学脉冲腐蚀法制备多孔硅微腔的过程中,不但要考虑到HF酸对硅的纵向电流腐蚀,也要考虑到HF酸对多孔硅硅柱的横向浸泡腐蚀.可通过选取合适的周期、占空比,使二者对多孔硅的作用达到适中,以制备出高质量的多孔硅多层膜和微腔.并用正交实验法优化了制备多孔硅微腔的参数,根据优化的实验参数,制备出了发光峰半峰宽为6nm的多孔硅微腔. 相似文献
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用电化学脉冲腐蚀方法制备了多孔硅微腔,讨论了脉冲电化学腐蚀的参数--周期、占空比对多孔硅多层膜制备的影响,并用了以HF酸扩散为基础的多孔硅动态腐蚀机理对实验结果进行解释,认为在用电化学脉冲腐蚀法制备多孔硅微腔的过程中,不但要考虑到HF酸对硅的纵向电流腐蚀,也要考虑到HF酸对多孔硅硅柱的横向浸泡腐蚀.可通过选取合适的周期、占空比,使二者对多孔硅的作用达到适中,以制备出高质量的多孔硅多层膜和微腔.并用正交实验法优化了制备多孔硅微腔的参数,根据优化的实验参数,制备出了发光峰半峰宽为6nm的多孔硅微腔. 相似文献
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电化学脉冲腐蚀法制备窄峰发射的多孔硅微腔 总被引:1,自引:0,他引:1
用电化学脉冲腐蚀方法制备了多孔硅微腔 ,讨论了脉冲电化学腐蚀的参数——周期、占空比对多孔硅多层膜制备的影响 ,并用了以 HF酸扩散为基础的多孔硅动态腐蚀机理对实验结果进行解释 ,认为在用电化学脉冲腐蚀法制备多孔硅微腔的过程中 ,不但要考虑到 HF酸对硅的纵向电流腐蚀 ,也要考虑到 HF酸对多孔硅硅柱的横向浸泡腐蚀 .可通过选取合适的周期、占空比 ,使二者对多孔硅的作用达到适中 ,以制备出高质量的多孔硅多层膜和微腔 .并用正交实验法优化了制备多孔硅微腔的参数 ,根据优化的实验参数 ,制备出了发光峰半峰宽为 6 nm的多孔硅微腔 相似文献
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提出了一种在HfSiON介质上,采用非晶硅为硬掩膜的选择性去除TaN的湿法腐蚀工艺。由于SC1(NH4OH:H2O2:H2O)对金属栅具有合适的腐蚀速率且对硬掩膜和高K材料的选择比很高,所以选择它作为TaN的腐蚀溶液。与光刻胶掩膜和TEOS硬掩膜相比,因非晶硅硬掩膜不受SC1溶液的影响且很容易用NH4OH溶液去除(NH4OH溶液对TaN和HfSiON薄膜无损伤),所以对于在HfSiON介质上实现TaN的选择性去除来说非晶硅硬掩膜是更好的选择。另外,在TaN金属栅湿法腐蚀和硬掩膜去除后, 高K介质的表面是光滑的,这可防止器件性能退化。因此,采用非晶硅为硬掩膜的TaN湿法腐蚀工艺可以应用于双金属栅集成,实现先淀积的TaN金属栅的选择性去除。 相似文献
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以等离子体化学气相沉积法 (PECVD)在 30 0℃下用 Si H4和 O2 混合气体制备了非晶 Si Ox∶ H(a- Si Ox∶ H,0≤ x≤ 2 .0 )薄膜 ,并用傅里叶红外光谱 (FT- IR)测试分析了薄膜中的 Si— O— Si键红外吸收特性 .Si— O— Si伸缩振动模在 10 5 0 cm- 1和 115 0 cm- 1附近有两个吸收峰 ,而弯曲振动模在 80 0 cm- 1附近有一个吸收峰 . 10 5 0 cm- 1和115 0 cm- 1 吸收带的吸收强度之和 Isum与薄膜中的 Si原子密度 NSi之比 Isum/ NSi在氧含量 x =0— 2 .0的范围内和 x成正比 .求得氧含量比例系数 ASi O (Si— O谐振子强度的倒数 )为 1.48× 10 1 9cm- 1 . 相似文献
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E. V. Astrova V. V. Ratnikov R. F. Vitman A. A. Lebedev A. D. Remenyuk Yu. V. Rud’ 《Semiconductors》1997,31(10):1084-1090
The results of an investigation of layers of porous silicon (PS), which was obtained by electrochemical etching of p-Si under different illumination conditions — natural light, incandescent light, and light from a mercury lamp with and without
a filter — are reported. The structure of the layers was studied by double-crystal x-ray diffractometry, the composition was
monitored by means of the IR absorption spectra, and the radiative properties were monitored according to the photoluminescence
(PL) spectra. It was established that electrochemical etching under illumination produces PS with a higher porosity and more
intense PL whose maximum is shifted into the short-wavelength region. These changes are accompanied by a large disordering
of the structure and an increase in the oxygen content in the layer. It is concluded that illumination accelerates the chemical
interaction of PS with the electrolyte due to oxidation. High-porosity porous silicon stored in air exhibits quenching of
PL. Conversely, PL is excited in layers with a lower porosity. Aging of PS is characterized by an increase in the microdeformation
of the layers, a decrease in the crystallite sizes with a partial loss of coherence between the crystallites and the substrate,
and an increase in the fraction of the amorphous phase.
Fiz. Tekh. Poluprovodn. 31, 1261–1268 (October 1997) 相似文献
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Porous silicon(PS) layers were formed on textured crystalline silicon by electrochemical etching in HF-based electrolyte.Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover,the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated.The results show that the TMAH textured surfaces with PS formation present a dramatic decrease in reflectance.The longer the anodizing time is,the lower the reflectance.Moreover,an initial surface with bigger pyramids achieved lower reflectance in a short wavelength range.A minimum reflectance of 3.86%at 460 nm is achieved for a short anodizing time of 2 min.Furthermore,the reflectance spectrum of the sample,which was etched in 3 vol.%TMAH for 25 min and then anodized for 20 min,is extremely flat and lies between 3.67%and 6.15%in the wavelength range from 400 to 1040 nm.In addition,for a short anodizing time,a slight increase in the effective carrier lifetime is observed.Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells. 相似文献
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氧与激光辐照对多孔硅光致发光光谱的影响 总被引:1,自引:1,他引:0
毛晋昌 《红外与毫米波学报》1992,11(5):401-405
将化学腐蚀后的多孔硅样品分别置于大气和氧气中,用激光连续辐照其表面.观察到多孔硅的光致发光光谱峰位随辐照时间增加发生蓝移,最后达到稳定,在真空中作同样处理的多孔硅光致发光峰位却没有移动.X射线光电子谱测量结果表明,在大气及氧气中激光辐照的多孔硅层内并未探测到二氧化硅,结合红外吸收光谱实验,认为蓝移的原因可能是氧置换了多孔硅内表面的硅,出现Si-O-Si结构的结果. 相似文献
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SHU Yun-xing GE Bo ZHANG Yong-sheng YU Ke 《半导体光子学与技术》2005,11(3):179-183
Patterned porous silicon (PS) films were synthesised by using bydrogen ion implantation technique and typical electrochemical anodic etching method.The surface morphology and characteristics of the PS films were characterized by scanning electron microscopy (SEM),X-ray diffraction(XRD),and atomic force microscopy (AFM).The efficient electron field emission with low turn-on field of about 3.5V/μm was obtained at current density of 0.1μA/cm^2.The electron field emission current density from the patterned PS films reached 1mA/cm^2 under and applied field of about 12.5V/μm.The experimental results show that the patterned PS films are of certain practical significance and are valuable for flat panel displays. 相似文献
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A. V. Myakonkikh K. Yu. Kuvaev A. A. Tatarintsev N. A. Orlikovskii K. V. Rudenko O. P. Guschin E. S. Gornev 《Russian Microelectronics》2018,47(5):323-331
The processes of plasma etching of stack layers to form a structure of a metal gate of a nanoscale transistor with a dielectric with a high level of dielectric permittivity (HkMG) are investigated. A resist mask formed by fine-resolution electron-beam lithography is used in the etching. The plasma etching of the stack’s layers is carried out in one technological etching cycle without a vacuum break. The sequential anisotropic etching process of the stack of polysilicon, tantalum nitride, and hafnium nitride, as well as the etching process of the gate insulator based on hafnium oxide with a high degree of selectivity in relation to the underlying crystalline silicon, which guarantees the complete removal of the layer of hafnium oxide and the minimal loss of the silicon layer (not more than 0.5 nm), is investigated. 相似文献
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Porous silicon (PS) samples were fabricated by pulse current etching using different times. The downward uniformity and optical properties of the PS layers have been investigated using reflectance spectroscopy, photoluminescence spectroscopy, and scanning electron microscopy (SEM). The relationship between the refractive index and the optical thickness of PS samples and the etching depth has been analyzed in detail. As the etching depth increases, the average refractive index decreases, indicating that the porosity becomes higher, and the formation rate of the optical thickness decreases. Meanwhile, the reflectance spectra exhibit less intense interference oscillations,which mean the uniformity and interface smoothness of the PS layers become worse. In addition, the intensity of PL emission spectra is slightly increased. 相似文献