Use of fluorine-doped silicon oxide for temperature compensation of radio frequency surface acoustic wave devices

This paper investigates acoustic properties, including the temperature coefficient of elasticity (TCE), of fluorine-doped silicon oxide (SiOF) films and proposes the application of the films to the temperature compensation of RF SAW devices. From Fourier transform infrared spectroscopy (FT-IR), SiOF films were expected to possess good TCE properties. We fabricated a series of SAW devices using the SiOF-overlay/Cu-grating/LiNbO(3)-substrate structure, and evaluated their performance. The experiments showed that the temperature coefficient of frequency (TCF) increases with the fluorine content r, as we expected from the FT-IR measurement. This means that the Si-O-Si atomic structure measurable by the FT-IR governs the TCE behavior of SiO(2)-based films even when the dopant is added. In comparison with pure SiO(2) with the film thickness h of 0.3 wavelengths (λ), TCF was improved by 7.7 ppm/°C without deterioration of the effective electromechanical coupling factor K2 when r = 3.8 atomic % and h = 0.28λ. Fluorine inclusion did not obviously influence the resonators' Q factors when r < 8.8 atomic %.     

Formation and properties of proton-exchanged and annealed LiNbO3 waveguides for surface acoustic wave

The proton-exchanged (PE) and annealed PE (APE) z-cut LiNbO₃ waveguides were fabricated using H₄P₂O₇. The positive strain, c-axis lattice constant change (Δc/c), was calculated to be about +0.43%, which was almost independent of the exchanged conditions. The penetration depth of H measured by secondary ion mass spectrometry (SIMS) exhibited a step-like profile, which was assumed to be equal to the waveguide depth (d). The surface acoustic wave (SAW) properties of PE and APE z-cut LiNbO₃ samples were investigated. The phase velocity (V_p) and electromechanical coupling coefficient (K ²) of PE samples were significantly decreased by the increase of kd, where k was the wavenumber (2π/λ). The insertion loss (IL) of PE samples was increased by the increase of kd and became nearly constant at kd>0.064. The temperature coefficient of frequency (TCF) of PE samples allowed an apparent increase with kd, reaching a maximum at kd=0.292, then slightly decreased at higher kd. The effects of annealing resulted in a restoration of V_p and an improvement of IL     

Synthesis and surface acoustic wave properties of AlN films deposited on LiNbO3 substrates

The c-axis-oriented aluminum nitride (AlN) films were deposited on z-cut lithium niobate (LiNbO₃) substrates by reactive RF magnetron sputtering. The crystalline orientation of the AlN film determined by x-ray diffraction (XRD) was found to be dependent on the deposition conditions such as substrate temperature, N₂ concentration, and sputtering pressure. Highly c-axis-oriented AlN films to fabricate the AlN/LiNbO₃-based surface acoustic wave (SAW) devices were obtained under a sputtering pressure of 3.5 mTorr, N₂ concentration of 60%, RF power of 165 W, and substrate temperature of 400°C. A dense pebble-like surface texture of c-axis-oriented AlN film was obtained by scanning electron microscopy (SEM). The phase velocity and the electromechanical coupling coefficient (K²) of SAW were measured to be about 4200 m/s and 1.5%, respectively. The temperature coefficient of frequency (TCF) of SAW was calculated to be about -66 ppm/°C     

Suppression of transverse-mode spurious responses for SAW resonators on SiO2/Al/LiNbO3 structure by selective removal of SiO2

A SiO(2)/Al/LiNbO(3) structure has a large electromechanical coupling factor (K(2)) and good temperature coefficient of frequency (TCF) for applications as a SAW duplexer of the Universal Mobile Telecommunications System (UMTS) Band I. However, the SiO(2)/Al/LiNbO(3) structure also supports two unwanted spurious responses; one is caused by the Rayleigh mode and the other by the transverse mode. As the authors have previously discussed, the Rayleigh-mode spurious response can be suppressed by controlling the cross-sectional shape of a SiO(2) overlay deposited on resonator electrodes. In this paper, a new technique to suppress the transverse-mode spurious responses is proposed. In the technique, the SiO(2) overlay is selectively removed from the dummy electrode region. The spurious responses are analyzed by the laser probe system. The results indicate that the spurious responses in question were hybrid modes caused by the coupling between the main (SH) SAW and another (Rayleigh) SAW with different velocities. The hybrid-mode spurious behavior was dependent on the velocities in the IDT and the dummy regions (v(i) and v(d)). The hybrid-mode spurious responses could be suppressed by selectively removing SiO(2). Furthermore, the SAW energy confinement could be enhanced in the IDT electrode region when v(i) < v(d). The transverse-mode spurious responses were successfully suppressed without degrading the SAW resonator performances.     

Phononic crystals based on LiNbO3 realized using domain inversion by electron-beam irradiation.

We report in this paper about the realization of domain inversion in z-cut lithium niobate by electron beam irradiation in order to perform phononic crystals. The fabrication of these phononic crystals on z-cut LiNbO3, which is, in our case, a periodic repetition of voids and LiNbO3, was achieved by domain inversion followed by wet etching, taking advantage of the large difference in etching rate between z+ and z- faces. A pertinent choice of irradiation conditions such as accelerating voltage, beam current, and charge density was determined and optimized. Two-dimensional structures at the micrometer scale were then realized on z-cut LiNbO3. We demonstrate the achievement of hexagons with diameters between 2 microm and 18 microm, with a very important depth close to 30 microm, which depends on the etching time and the hole size. The obtained structures, which exhibit a filling fraction varying from 1% to 64%, were characterized before etching by polarizing microscope to visualize the inverted domains. After HF etching, scanning electron microscopy was used to observe the obtained phononic structures. Taking into account the obtained filling fraction values and the size of created hexagons, the frequency band gap of these structures is expected at a range of 200 to 350 MHz. As expected in this frequency range, we have proven experimentally the existence of the phononic band gap on z-cut LiNbO3 by combination of a realized phononic crystal with a surface acoustic wave (SAW) device.     

Harmonic surface acoustic waves on gallium nitride thin films

SAW devices operating at the fundamental frequency and the 5th, 7th, 9th, and 11th harmonics have been designed, fabricated, and measured. Devices were fabricated on GaN thin films on sapphire substrates, which were grown via metal organic vapor phase epitaxy (MOVPE). Operating frequencies of 230, 962, 1338, 1720, and 2100 MHz were achieved with devices that had a fundamental wavelength, /spl lambda/(0) = 20 /spl mu/m. Gigahertz operation is realized with relatively large interdigital transducers that do not require complicated submicrometer fabrication techniques. SAW devices fabricated on the GaN/sapphire bilayer have an anisotropic propagation when the wavelength is longer than the GaN film thickness. It is shown that for GaN thin films, where kh(GaN) > 10 (k = 2/spl pi///spl lambda/ and h(GaN) = GaN film thickness), effects of the substrate on the SAW propagation are eliminated. Bulk mode suppression at harmonic operation is also demonstrated.     

Simulation of characteristics of a SiO2/c-axis-oriented LiNbO3/diamond surface acoustic wave

High-frequency surface acoustic wave (SAW) devices based on diamond that have been realized to date utilize c-axis-oriented ZnO as the piezoelectric thin film. This material, with SiO2 overlay, shows excellent characteristics of a high phase velocity of over 10,000 m/s and a zero temperature coefficient, and it has been successfully applied to high-frequency SAW filters and resonators. To expand on materials used on diamond, the theoretical calculation has been carried out for LiNbO3/diamond, and a high electromechanical coupling coefficient up to 9.0% is expected. In this work, the characteristics of SiO2/LiNbO3/diamond were studied by computer simulation, emphasizing a zero temperature coefficient with a high coupling coefficient. Calculations are carried out for the phase velocity, the electromechanical coupling coefficient, and the temperature coefficient of the Rayleigh wave and its higher mode Sezawa wave. As a result, SiO2/IDT/LiNbO3/diamond is found to offer a zero temperature coefficient with a very high coupling coefficient up to 10.1% in conjunction with a high phase velocity of 12,100 m/s.     

Suppression of sidelobe levels for guided-wave acousto-optic tunable filters using weighted coupling

An analysis of guided-wave acousto-optic tunable filters (AOTFs) that employ simple acousto-optic (AO) weighted coupling techniques for sidelobe reduction and the calculated and experimental results from a specific example that involves only variation of the width of a surface acoustic wave (SAW) slot waveguide are presented. The calculations on single- and multi-stage AOTFs consisting of an optical channel waveguide and a SAW slot waveguide in LiNbO(3) substrate show that waveguide width weighting using generalized Hamming functions would provide significant improvement in sidelobe suppression. Calculated results together with the design, fabrication, and measured performance characteristics of a single-stage AOTF that utilizes a weighted-aperture SAW slot waveguide in YX-LiNbO(3) substrate at the optical wavelength of 1.55 mum and the acoustic center frequency of 175 MHz are reported. The measured sidelobe level is -13.6 dB and the measured FWHM bandwidth is 26 A, as compared to the theoretical values of -15.0 dB and 15 A, respectively. The RF drive power was measured to be 1.0 W at a mode-conversion efficiency of 100%     

Simulation of characteristics of a LiNbO3/diamond surface acoustic wave

High-frequency surface acoustic wave (SAW) devices based on diamond that have been produced to date utilize the SiO2/ZnO/diamond structure, which shows excellent characteristics of a phase velocity of over 10,000 m/s with a zero temperature coefficient; this structure has been successfully applied to high-frequency narrowband filters and resonators. To expand material systems to wideband applications, c-axis-oriented LiNbO3 on diamond was studied and a coupling coefficient up to 9.0% was estimated to be obtained. In this paper, the characteristics of LiNbO3/diamond with the assumption that the LiNbO3 film is a single crystal have been studied by theoretical calculations to find higher coupling coefficient conditions. Calculations are made for the phase velocity, the coupling coefficient, and the temperature coefficient of the Rayleigh wave and its higher mode Sezawa waves. As a result, LiNbO3/diamond is found to offer a very high electromechanical coupling coefficient of up to 16% in conjunction with a high phase velocity of 12,600 m/s and a small temperature coefficient of 25 ppm/deg. This characteristic is suitable for wide bandwidth applications in high-frequency SAW devices.     

DNA immobilization and SAW response in ZnO nanotips grown on LiNbO/sub 3/ substrates

DNA immobilization enhancement is demonstrated in a structure consisting of ZnO nanotips on 128/spl deg/ Y-cut LiNbO/sub 3/.The ZnO nanotips are grown by metal-organic chemical vapor deposition (MOCVD) on the top of a SiO/sub 2/ layer that is deposited and patterned on the LiNbO/sub 3/ SAW delay path. The effects of ZnO nanotips on the SAW response are investigated. X-ray diffraction and scanning electron microscopy are used to analyze the ZnO nanotips, which are of single crystalline quality, and they are uniformly aligned with their c-axis perpendicular to the substrate surface. The photoluminescence (PL) spectrum of the ZnO nanotips shows strong near bandedge transition with insignificant deep level emission, confirming their good optical property. DNA immobilization enhancement is experimentally validated by radioactive labeling tests and SAW response changes. The ZnO nanotips enhance the DNA immobilization by a factor of 200 compared to ZnO film with flat surface. DNA hybridization with complementary and noncomplementary second strand DNA oligonucleotides is used to study the selective binding of the structure. This device structure possesses the advantages of both traditional SAW sensors and ZnO nanostructures.     

Film-loaded SAW waveguides for integrated acousto-optical polarization converters

We report on a detailed theoretical and experimental investigation of film-loaded surface acoustic wave (SAW) waveguides in lithium niobate (LiNbO3) for integrated acousto-optical (AO) polarization converters. The numerical analysis is based on both a scalar and a full-vectorial model. Dispersion plots and figures of merit for several structures are given, which lead to design parameters for optimized polarization converters. It is pointed out that very attractive structures are metal/dielectric/LiNbO3 strip waveguides and dielectric/LiNbO3 slot waveguides, in which metal is either gold (Au) or aluminum (Al), and the dielectric film is an optical transparent material such as silicon oxide (SiO2), magnesium oxide (MgO), or aluminium oxide (Al2O3). Polarization converters with the designed acoustical waveguides have been realized and characterized by optical conversion and laser probing measurements.     

Ultra temperature-stable bulk-acoustic-wave resonators with SiO2 compensation layer

This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/degrees C at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide's positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO2 on a surface micromachined cantilever that is released by XeF2 vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO2/Si/SiO2 supporting substrate.     

Collinear guided wave to leaky wave acoustooptic interactions in proton-exchanged LiNbO(3) waveguides

The results of a detailed theoretical study on collinear guided wave to leaky wave acoustooptic (AO) interactions in proton-exchanged LiNbO(3) (PE:LiNbO(3)) planar waveguides are presented. The guided-to-leaky mode conversion for an input optical beam at the wavelength of 632.8 nm by the induced diffraction grating from a collinear surface acoustic wave (SAW) is analyzed using a generalized multimode formulation of the coupled mode theory. Mode conversion efficiency and AO bandwidth have been calculated as functions of acoustic frequency, interaction length, guiding layer thickness, and acoustic drive power density for three cuts of the LiNbO(3) substrate. High performance configurations that are desirable for application to demultiplexing and switching in optical communication systems are identified, and the corresponding channel capacity and frequency resolution are determined. For example, it was shown that the X-cut configuration features the highest mode conversion efficiency. However, a relatively small AO bandwidth is associated with this configuration. Both high mode conversion efficiency and large AO bandwidth can be accomplished at the guiding layer thickness of 1.0 mum. A TM(o)-->TE(nu) mode conversion efficiency as high as 42% together with an AO bandwidth of approximately 70 MHz can be achieved in the Z-cut waveguide at the guiding layer thickness of 1.0 mum, acoustic drive power density of 50 mW/mm, interaction length of 40 mm, and acoustic frequency of 460 MHz. The corresponding channel capacity and frequency resolution are 745 and 0.09 MHz, respectively. Measured mode conversion efficiencies as high as 90 and 78% obtained at the acoustic frequencies of 107 and 367 MHz using the X-cut substrate and the Y-propagation SAW have verified the theoretical prediction on the mode conversion efficiencies.     

The effect of an SiO(2) buffer layer on the SAW properties of ZnO/SiO(2)/GaAs structure

The effect of an SiO(2) buffer layer on the surface acoustic wave (SAW) properties of ZnO/SiO(2)/GaAs structure is examined. Both theoretical and experimental results show that the coupling coefficient is increased appreciably by providing an SiO(2 ) film between the ZnO film and the GaAs substrate. Adding an SiO (2) film is also beneficial to the promotion of quality of ZnO thin film. The results could be useful for the further development of monolithic SAW devices.     

High Q metal strip SSBW resonators using a SAW design

An experimental study of metal strip surface skimming bulk wave (SSBW) resonators using a surface acoustic wave (SAW) design is presented. Characteristics of SSBW and SAW resonators fabricated with the same photolithographic mask are compared and discussed. High Q low-loss SSBW resonators are achieved using a conventional two-port SAW resonator design and taking special care of the distance L between both interdigital transducers, the metal thickness h/lambda (lambda=acoustic wavelength) and the finger-to-gap ratio. Best overall performance of the SSBW devices in this study is achieved at L=nlambda/2-lambda/4 (compared with L=nlambda/2-lambda/8 for SAW resonators), h /lambda=1.6% (compared with 2% for SAW), and finger-to-gap ratio close to 1. The best device fabricated shows an unloaded Q of 5820 and an insertion loss of 7.8 dB at 766 MHz. The SSBW resonant frequency shows a stronger dependence on the metal thickness than the SAW one. This problem, however, is readily solved by frequency trimming using a CF(4) plasma etching technique. SSBW resonator can be trimmed by 0.2% down in frequency (compared with 0.05% for SAW) without affecting their performance.     

DNA immobilization and SAW response in ZnO nanotips grown on LiNbO3 substrates.

DNA immobilization enhancement is demonstrated in a structure consisting of ZnO nanotips on 128 degrees Y-cut LiNbO3. The ZnO nanotips are grown by metalorganic chemical vapor deposition (MOCVD) on the top of a SiO2 layer that is deposited and patterned on the LiNbO3 SAW delay path. The effects of ZnO nanotips on the SAW response are investigated. X-ray diffraction and scanning electron microscopy are used to analyze the ZnO nanotips, which are of single crystalline quality, and they are uniformly aligned with their c-axis perpendicular to the substrate surface. The photoluminescence (PL) spectrum of the ZnO nanotips shows strong near bandedge transition with insignificant deep level emission, confirming their good optical property. DNA immobilization enhancement is experimentally validated by radioactive labeling tests and SAW response changes. The ZnO nanotips enhance the DNA immobilization by a factor of 200 compared to ZnO film with flat surface. DNA hybridization with complementary and noncomplementary second strand DNA oligonucleotides is used to study the selective binding of the structure. This device structure possesses the advantages of both traditional SAW sensors and ZnO nanostructures.     

Unidirectional SAW transducer for gigahertz frequencies

A single-phase unidirectional transducer (SPUDT) structure using /spl lambda//4 and wider electrodes is introduced. The considerable difference between the reflectivity of short-circuited /spl lambda//4 electrodes and that of floating /spl lambda//2-wide electrodes on 128/spl deg/ lithium niobate (LiNbO/sub 3/) is exploited. The surface acoustic wave (SAW) device operating at 2.45 GHz has critical dimensions of about 0.4 /spl mu/m, accessible for standard optical lithography.     

Sputtering ZnO films on langasite and its SAW properties

C-axis-oriented ZnO films were sputtered on Langasite substrate (LGS, La(3)Ga(5)SiO(14)). The crystalline structure of the films was determined by grazing incident angle X-ray diffraction, the surface microstructure of films was investigated by scanning electron microscopy and atomic force microscopy, the atom composition ratio O/Zn of films was determined by energy dispersive X-ray spectroscopy, and the resistivity of films was determined by the four-point probe instrument. The measurement results showed those films prepared were all polycrystalline hexagonal ZnO films. By analyzing the microstructure of the ZnO films, those prepared at the oxygen flow rate (O(2)/O(2)+Ar) of 20%, the RF power of 200 W, and the substrate temperature of 200 degrees C had the best performance: highly c-axis-oriented microstructures, dense surface morphology, and the atom composition ratio 1.02. The measured scattering parameters of the SAW device fabricated on the composite substrate (ZnO/LGS) with film thickness 1.76 microm showed an average shifted velocity around 2741 m/s at 57.1 MHz and a electromagnetic coupling coefficient greater than 1%.     

Surface acoustic wave characterization of PECVD films on galliumarsenide

Surface-acoustic-wave (SAW) measurement techniques can be effectively used to determine the acoustic properties of dielectric and piezoelectric films. Such films can be used for the development of semiconductor-integrated microwave-frequency surface and bulk acoustic wave devices. The acoustic properties of silicon nitride, silicon oxynitride, silicon carbide, and TEOS glass, deposited by plasma-enhanced chemical-vapor-deposition (PECVD) on GaAs, have been characterized using linear arrays of SAW interdigital electrodes operating in the harmonic mode over the frequency region from 30 MHz to above 1.0 GHz. The elastic constants of these amorphous films have been determined by fitting theoretical dispersion curves to the measured SAW velocity characteristics. Frequency-dependent SAW propagation-loss values have been determined from the observed linear change in loss as a function of transducer separation. Preliminary measurements of the temperature coefficient of frequency (TCF) for SAW propagation of the films on GaAs are also given     

Super high electromechanical coupling and zero temperature coefficient surface acoustic wave substrates in KNbO(3) single crystal

The propagation characteristics of surface acoustic waves (SAW) and piezoelectric leaky surface waves in KNbO(3) single crystal have been investigated theoretically and experimentally. The results show that the electromechanical coupling coefficient k(2) of the surface wave propagating along the X-axis of the rotated Y-cut plate is very large with k(2)=0.53. This is about 10 times as large as that of LiNbO(3) in the surface wave branch. Experimental results for wideband SAW filters show low loss and temperature stable characteristics. The bandwidth is about 20%, and insertion losses are less than 2 to 6 dB. Simulation results for a ladder type filter using Y-cut KNbO(3) indicate that a bandwidth of 40% should be possible. The KNbO(3) substrates exhibit zero temperature coefficient of frequency (TCF) around 20 degrees C in rotated Y-cut substrates.