共查询到20条相似文献,搜索用时 15 毫秒
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Wei-Hua Guo Qiao-Yin Lu Yong-Zhen Huang Li-Juan Yu 《Quantum Electronics, IEEE Journal of》2004,40(2):123-129
A gain measurement technique, based on Fourier series expansion of periodically extended single fringe of the amplified spontaneous emission spectrum, is proposed for Fabry-Perot semiconductor lasers. The underestimation of gain due to the limited resolution of the measurement system is corrected by a factor related to the system response function. The standard deviations of the gain-reflectivity product under low noise conditions are analyzed for the Fourier series expansion method and compared with those of the Hakki-Paoli method and Cassidy's method. The results show that the Fourier series expansion method is the least sensitive to noise among the three methods. The experiment results obtained by the three methods are also presented and compared. 相似文献
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The Fabry?Perot (FP) method of semiconductor laser gain measurement, first proposed by Hakki and Paoli (1975), is widely used. It is based on the measurement of the FP resonances excited by spontaneous emission. Its validity rests on the assumption that a single mode is significant. We show, using a simplified laser model, that this assumption is valid only when the power mirror reflectivity is very small, or near the laser oscillating frequency. For example, the error is in the order of 20% when the power facet reflectivities are equal to 37% and the modal gain is unity. These results apply to both index-guided and gain-guided lasers. 相似文献
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Wei-Hua Guo Qiao-Yin Lu Yong-Zhen Huang Li-Juan Yu 《Photonics Technology Letters, IEEE》2003,15(11):1510-1512
A technique based on the integration of the product of amplified spontaneous emission spectrum and a phase function over one mode interval is proposed for measuring the gain spectrum for Fabry-Perot semiconductor lasers, and a gain correction factor related to the response function of the optical spectrum analyzer (OSA) is obtained for improving the accuracy of the measured spectrum. Gain spectra with a difference less than 1.3 cm/sup -1/ from 1500 to 1600 nm are obtained for a 250-/spl mu/m-long semiconductor laser at an OSA resolution of 0.06, 0.1, 0.2, and 0.5 nm. The corresponding gain correction factor is about 9 cm/sup -1/ at a resolution of 0.5 nm. The gain spectrum measured at a resolution of 0.5 nm has the same accuracy as that obtained by the Hakki-Paoli method at a resolution of 0.06 nm for a laser with a mode interval of 1.3 nm. 相似文献
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射线法研究两段式半导体激光器模谱 总被引:1,自引:0,他引:1
由于两区载流子密度不同,两段式双稳半导体激光器(TBLD)两区界面反射不为零,这将使器件的输出模谱变得复杂,利用射线法,推导了TBLD的端面输出模谱表达式,在此基础上讨论了界面反射的影响以及由界面及端面构成的子腔对模谱的调制。 相似文献
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A new technique for the measurement of semiconductor laser gain and dispersion spectra is presented. The technique is based on an analysis of the subthreshold emission spectrum by Fourier transforms. Applications of this method to AlGaInP-based interband laser diodes and mid-infrared intersubband quantum cascade lasers are discussed. A good agreement between the measured dispersion of the refractive index and tabulated values in the literature was found 相似文献
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We present several observations on a novel method for the evaluation of the internal loss properties in semiconductor lasers. The method we use involves Fourier analysis of the Fabry-Perot mode spectrum when operating the device below lasing threshold. The observation of various structural features in the Fourier transform domain allows us to extract important information on the laser cavity. As one example, the amount of cavity propagation loss/gain, or net gain, can be derived from the decay rate of harmonics of the Fourier spectrum. A comparison between experimental and calculated gain versus wavelength data for lasers fabricated in the AlGaAs, AlGaInP, and AlGaInN material systems is given. As a second example, this method also allows the identification of the density and strength of intracavity scattering centers. This is an important capability for the fabrication of blue diode lasers in the gallium-nitride material system 相似文献
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The effect of nonlinear gain on the frequency response of semiconductor lasers at high bias powers is analysed using the multimode rate equations. In spite of the strong damping of the relaxation oscillations due to nonlinear gain, bandwidths of over 40 GHz appear to be attainable in semiconductor lasers. 相似文献
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对包含增益压缩因子的半导体激光器(LD)的稳态速率方程组进行了求解,得到了隐函数形式的解析解,并以此讨论了增益压缩因子对某些LD稳态特性的影响。 相似文献
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Qing Hu C. A. Mears P. L. Richards F. L. Lloyd 《Journal of Infrared, Millimeter and Terahertz Waves》1988,9(4):303-320
Planar lithographed quasioptical mixers can profit from the use of integrated tuning elements to improve the coupling between the antenna and the SIS mixer junctions. We have used a Fourier transform spectrometer with an Hg-arc lamp source as an RF sweeper to measure the frequency response of such integrated tuning elements. The SIS junction connected to the tuning element served as the direct detector for the spectrometer. This relatively quick, easy experiment can give enough information over a broad range of millimeter and submillimeter wavelengths to test both design concepts and success in fabrication. One type of tuning element, an inductive wire connected in parallel with a series array of 5 SIS junctions across the terminals of a bow-tie antenna, shows a resonant response peak at 100 GHz with a 30% bandwidth. This result is in excellent agreement with theoretical calculations based on a simple L-C circuit. It also agrees very well with the RF frequency dependence of the mixer gain measured using the same structure. The other type of tuning element, an open-circuited stub connected in parallel with a single SIS junction across the terminals of a bow-tie antenna, exhibits multiple resonances at 110, 220, and 336 GHz, with bandwidths of 9–15 GHz. This result is in good agreement with theoretical calculations based on an open-circuited stub with small loss and small dispersion. The position and the bandwidth of the resonance at 110 GHz also agrees with the RF frequency dependence of the mixer gain measured using similar structures. 相似文献
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Using a method based on measurement of modulation frequency harmonics, we have determined experimentally the spontaneous emission factors of GaAs-AlGaAs QW vertical cavity surface-emitting semiconductor lasers with square windows of widths 10, 15, and 30 μm. The values obtained are of the order 10-4 and scale as the reciprocal of the window width. We have also assessed the reliability and accuracy of the modulation frequency harmonic measurement technique by comparison with the prior technique based on curve fitting to the light-current characteristic 相似文献
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Arbitrary optical waveforms have been successfully generated by Fourier synthesis using three independent continuous-wave semiconductor lasers. The lasers were phase-locked to each other using a nonlinear phase-locking scheme. By controlling their amplitude and phase, triangular and trapezoidal waveforms as well as ordinary pulses have been generated 相似文献
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The effect of gain nonlinearities on the dynamic response is studied using a nonperturbative form of the nonlinear gain in the signal-mode rate equation. The nonperturbative form is different from that used previously and leads to qualitative and quantitative differences in the intensity dependence of the important dynamic parameters such as the frequency and the damping rate for relaxation oscillations. The results are important for the design of high-speed semiconductor lasers and suggest that the new form of the nonlinear gain should be used for modeling the modulation response in both the small-signal and large-signal regimes 相似文献
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The Bragg grating induced by the pattern of standing waves in a Fabry-Perot laser diode is shown to give a significant contribution to nonlinear gain. An analytic expression is derived for the contribution leading to a simple universal relation between the damping rate of relaxation oscillations, the square of the relaxation resonance frequency, and the carrier diffusion time. The effect of the standing wave grating cannot explain present data from various experiments, which indicated that there must be additional important contributions to nonlinear gain 相似文献