周期极化反转铌酸锂光波导的新特性和新应用

周期极化反转铌酸锂(PPLN)光波导以其响应速度超快和无自发辐射噪声影响等独特优点在高速全光信号处理中表现出优越性能并获得广泛应用.传统上主要利用PPLN光波导对比特速率和调制格式透明的特性实现全光波长转换、全光逻辑门和全光码型转换等功能.我们发现PPLN光波导其实也存在其不透明的一面[1].当携带相位信息的信号光置于PPLN光波导准相位匹配(QPM)波长处时,经过级联倍频和差频(cSHG/DFG)信号光中的相位信息在转换空闲光中被擦除.     

基于半导体光放大器交叉增益调制的波长转换的理论分析

本文利用小信号理论模型分析了基于半导体光放大器交叉增益调制的波长转换 ,获得了波长转换效率的解析表达式。结果表明 ,波长转换的频带响应宽度受到光放大器驱动电流、波导中的光功率以及转换波长的影响。     

交叉增益调制型全光波长转换器频响特性的小信号分析

对基于半导体光放大器交叉增益调制型全光波长转换器的频响特性作了理论分析,并获得了反映注入光参数对波长转换频响特性影响的解析表达式．数值结果表明,波长转换的频率响应带宽依赖于光放大器驱动电流、注入光波导的光功率以及转换波长间隔     

硅锗脊型波导在中红外波段的连续光宽带波长转换

提出了一种基于硅锗(Ge-on-Si,GOS)的新型亚微米光波导,通过调节二阶色散对此波导的结构进行了优化设计,研究了其在波长为3~6μm间的连续光波长转换性能.数值结果表明,在脊宽2.8μm、脊高1.6μm,平板厚度0.48μm的优化结构下,当泵浦光波长在靠近二阶零色散点的负色散波长区时可以实现高转换效率宽带中红外波长转换,3 d B转换带宽可达到1664 nm,在0.05 GW/cm2的泵浦光功率密度下,最大转换效率可达到-2.479 d B.该波导在中红外波段具有波长转换带宽大、转换效率高的优点,在未来空间光子网络与通信方面具有潜在的应用前景.     

基于和频效应1.5 μm波段新型高速全光波长转换器

基于周期极化反转铌酸锂(PPLN)光波导的和频(SFG)二阶非线性效应,提出并实验验证了1.5-μm波段信号光到抽运光的高速全光波长转换。输入信号光采用重复频率为40 GHz,脉宽为1.57 ps的皮秒脉冲或是40 Gbit/s的非归零(NRZ)码信号,输入抽运光为连续光,输出抽运光变为脉冲光,并且是输入信号光的反向波长转换。     

PPLN光波导中传输光波模场重叠因子分析

为了研究铌酸锂光波导中传输光波模场重叠因子对波长转换效率的影响,采用有限差分的方法进行了波导中传输光波模场及差频波长转换效率的研究,得到了波导中1560nm基频光和780nm倍频光光场分布以及引入模场匹配因子进行修正后的差频波长转换效率。结果表明,修正后的转换效率理论值与实验结果更加吻合,并且能够得到直接键合铌酸锂波导的最佳尺寸。这为周期极化铌酸锂脊形光波导的设计提供了理论依据。     

SOI光波导和集成波导光开关矩阵

报道了基于SOI (silicon-on-insulator）材料的光波导和集成波导光开关矩阵的最新研究进展. 给出了截面为梯形的脊波导的单模条件，设计制备了MMI (multimode interference）集成耦合器和基于Mach-Zehnder光波导干涉仪的热光型2×2光开关，开关转换速度达到了5～8μs，驱动功耗仅为140mW，是当前国际上同类型光开关中转换速度最快的. 在此基础上制备成功了4×4波导光开关矩阵，并实现了光信号在不同信道间的转换.     

SOI光波导和集成波导光开关矩阵

报道了基于SOI(silicon-on-insulator)材料的光波导和集成波导光开关矩阵的最新研究进展.给出了截面为梯形的脊波导的单模条件,设计制备了MMI(multimode interference)集成耦合器和基于Mach-Zehnder光波导干涉仪的热光型2×2光开关,开关转换速度达到了5～8μs,驱动功耗仅为140mW,是当前国际上同类型光开关中转换速度最快的.在此基础上制备成功了4×4波导光开关矩阵,并实现了光信号在不同信道间的转换.     

SOI光波导和集成波导光开关矩阵

报道了基于SOI(silicon-on-insulator)材料的光波导和集成波导光开关矩阵的最新研究进展.给出了截面为梯形的脊波导的单模条件,设计制备了MMI(multimode interference)集成耦合器和基于Mach-Zehnder光波导干涉仪的热光型2×2光开关,开关转换速度达到了5～8μs,驱动功耗仅为140mW,是当前国际上同类型光开关中转换速度最快的.在此基础上制备成功了4×4波导光开关矩阵,并实现了光信号在不同信道间的转换.     

混合光波长转换在波分复用光网络中的应用

在全光网络中，如何合理利用波长转换来降低光网络的阻塞率是一个非常关键的问题。研究了最新的波长转换体系结构和波长转换手段，提出一种全新的混合波长转换方法，在减少网络中波长转换器个数的同时，维持拥塞概率类似于全波长转换。提出了5种不同的波长转换器使用策略，并利用数值模拟的方法，比较了这5种不同的波长转换器使用策略，分析结果，得出了最小化光网络的阻塞概率的波长转换使用策略。结合混合波长转换和波长转换器使用策略，进一步提出了光网络中优化波长转换器配置的遗传算法，通过对14个节点的美国自然科学基金网(NSF Net)的数值模拟，结果表明它是十分有效的，在减少光网络中波长转换器数量，且不增加光网络波长数量的情况下，基本保持原有网络性能。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.